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Catalog Datasheet	Type	Document Tags	PDF
TSM2831 Abstract: No abstract text available Text: TSM2831 20V P-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Drain 3. Source VDS = - 20V RDS on , Vgs @ - 4.5V, Ids @ - 2.8A =120mΩ RDS (on), Vgs @ - 2.5V, Ids @ - 2.0A =180mΩ Features Advanced trench process technology Excellent thermal and electrical capabilities	Original	TSM2831 TSM2831CY OT-89 OT-89 TSM2831	PDF

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TSM2831

Abstract: No abstract text available
Text: TSM2831 20V P-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Drain 3. Source VDS = - 20V RDS on , Vgs @ - 4.5V, Ids @ - 2.8A =120mΩ RDS (on), Vgs @ - 2.5V, Ids @ - 2.0A =180mΩ Features Advanced trench process technology Excellent thermal and electrical capabilities

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TSM2831 TSM2831CY OT-89 OT-89 TSM2831

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