TSM2313CX
Abstract: TSM2313 MARKING 33A DIODE SOT23 TSM2313CX RF
Text: TSM2313 20V P-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain -20 Features ID (A) 70 @ VGS = -4.5V -3.3 90 @ VGS = -2.5V -2.0 130 @ VGS = -1.8V -1.0 Block Diagram ● Advance Trench Process Technology ●
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TSM2313
OT-23
TSM2313CX
TSM2313
MARKING 33A DIODE SOT23
TSM2313CX RF
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TSM2313CX
Abstract: sot-23 marking zj TSM2313 sot23 zj mosfet fw sot-23 TSM2313CX RF marking 2RV SOT-23
Text: TAIWAN S SEMICONDUCTOR TSM2313 20V P-Channei MOSFET pb RoHS CO M PLIAN C E SO T-23 PRODUCT SU M M ARY Pin D efinition: 1. Gate V ds (V) 2. Source 3. Drain 1 -20 2 F e a tu re s A dvance Trench Proces s T ech n o logy • High D ensity Cell Design for U ltra Low O n-resistance
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TSM2313
OT-23
TSM2313CX
OT-23
sot-23 marking zj
TSM2313
sot23 zj mosfet
fw sot-23
TSM2313CX RF
marking 2RV SOT-23
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Untitled
Abstract: No abstract text available
Text: TAIWAN S SEMICONDUCTOR pb: RoHS TSM2313 20V P-Channel MOSFET CO M PLÌAN C E SO T-23 PRODUCT SUMMARY Pin D efinition; 1. Gate 2. Source V ds (V 3. Drain 1 -20 2 Features Block Diagram ♦ A dvance Trench Proce s s T ech n o logy ♦ High D ensity Cell Design fcr U ltra Lew O n-resistance
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TSM2313
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Untitled
Abstract: No abstract text available
Text: TAIWAN TSM2313 % SEMICONDUCTOR pb: RoHS 20V P-Channel MOSFET CO M PLÌAN C E S O T -2 3 PRODUCT SUMMARY Pin D e fin itio n ; 1. G ate & 1 RoW m Q V ds (V ) 2. Source 3. Drain -2 0 2 Features A d v a n c e T re n c h P ro ce s s T e c h n o logy ♦ H igh D e n s ity C ell D e s ig n fc r U ltra L e w O n -re s is ta n c e
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TSM2313
2313C
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