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    Abstract: No abstract text available
    Text: TSM1412 Preliminary 20V N-Channel MOSFET SOT-363 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source 20 Features ID (A) 24 @ VGS = 4.5V 3 32 @ VGS = 2.5V 3 37 @ VGS = 2.0V 3 Block Diagram ● Advance Trench Process Technology


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    PDF TSM1412 OT-363 TSM1412CU6

    sot-363 n-channel mosfet

    Abstract: GD 363 A2 N-Channel n-channel mosfet transistor TSM1412 SOT363 44
    Text: TSM1412 Preliminary 20V N-Channel MOSFET SOT-363 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source 20 Features ID (A) 34 @ VGS = 4.5V 3 38 @ VGS = 2.5V 3 44 @ VGS = 2.0V 3 Block Diagram ● Advance Trench Process Technology


    Original
    PDF TSM1412 OT-363 TSM1412CU6 sot-363 n-channel mosfet GD 363 A2 N-Channel n-channel mosfet transistor TSM1412 SOT363 44