TSF10H100C Search Results

TSF10H100C Price and Stock

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Taiwan Semiconductor TSF10H100C DIODE ARR SCHOT 100V 5A ITO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TSF10H100C	Tube	994		1,000	1 - 10 - 100 - 1000 $0.49418 10000 $0.49418	Buy Now
Avnet Americas	TSF10H100C	Tube			1,000	1 - 10 - 100 - 1000 $0.4843 10000 $0.36277	Buy Now
Future Electronics	TSF10H100C				1,000	1 - 10 - 100 - 1000 $0.407 10000 $0.407	Buy Now

TSF10H100C Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
TSF10H100C C0G		Taiwan Semiconductor	Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE ARRAY SCHOTT 100V ITO220AB		Original	PDF

TSF10H100C Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: TSF10H100C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency	Original	TSF10H100C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1307010	PDF
Untitled Abstract: No abstract text available Text: TSF10H100C creat by ART Taiwan Semiconductor Dual High-Voltage Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability	Original	TSF10H100C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401020	PDF
Untitled Abstract: No abstract text available Text: TSF10H100C creat by ART Taiwan Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency	Original	TSF10H100C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1309046	PDF
Untitled Abstract: No abstract text available Text: TSF10H100C creat by ART Taiwan Semiconductor Dual High-Voltage Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability	Original	TSF10H100C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401020	PDF
Untitled Abstract: No abstract text available Text: TSF10H100C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency	Original	TSF10H100C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401020	PDF
Untitled Abstract: No abstract text available Text: TSF10H100C creat by ART Taiwan Semiconductor Dual High-Voltage Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability	Original	TSF10H100C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1408022	PDF