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    TS13003ACT TRANSISTOR Search Results

    TS13003ACT TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TS13003ACT TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1.5A NPN power transistor TO-92

    Abstract: TS13003ACT TRANSISTOR TS13003A TS13003ACT
    Text: TS13003A High Voltage NPN Transistor BVCEO = 430V BVCBO = 800V Ic = 1.5A VCE SAT , = 0.8V @ Ic / Ib = 0.5A / 0.1A Pin assignment: 1. Emitter 2. Collector 3. Base Features Ordering Information High voltage. Part No. High speed switching Structure Silicon triple diffused type.


    Original     		PDF TS13003A TS13003ACT 300uS, 1.5A NPN power transistor TO-92 TS13003ACT TRANSISTOR TS13003A