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    YRTK500524TS00000BE Renesas Electronics Corporation Renesas Starter Kit for RX24T Visit Renesas Electronics Corporation
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    PTSolns PTS-00075-201

    BREADBOARD GENERAL PURPOSE PTH
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    DigiKey PTS-00075-201 Bag 2,104 1
    • 1 $6.16
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    JRH Electronics MTSW-104-09-T-S-000

    CONN HEADER VERT 4POS 2.54MM
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    DigiKey MTSW-104-09-T-S-000 Bulk 1,208 1
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    JRH Electronics MTSW-104-23-T-S-000

    PIN HEADER, BOARD-TO-BOARD, 2.54
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    JRH Electronics MTSW-105-09-T-S-000

    CONN HEADER VERT 5POS 2.54MM
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    DigiKey MTSW-105-09-T-S-000 Bulk 1,047 1
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    JRH Electronics MTSW-107-07-T-S-000

    CONN HEADER VERT 7POS 2.54MM
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    DigiKey MTSW-107-07-T-S-000 Bulk 783 1
    • 1 $1.13
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    TS000 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Type PDF
    TS0001 American Technical Ceramics Kits - Capacitor Kits - CAP KIT CERAMIC 0.1PF-100PF Original PDF
    TS0001T American Technical Ceramics Kits - Capacitor Kits - CAP KIT CERAMIC 0.1PF-100PF Original PDF
    TS0002 American Technical Ceramics Kits - Capacitor Kits - CAP KIT CERAMIC 0.1PF-10PF Original PDF
    TS0003 American Technical Ceramics Kits - Capacitor Kits - CAP KIT CERAMIC 10PF-1000PF Original PDF
    TS0004T American Technical Ceramics Kits - Capacitor Kits - CAP KIT CERAMIC 0.1PF-2PF Original PDF
    TS0005T American Technical Ceramics Kits - Capacitor Kits - CAP KIT CERAMIC 1PF-10PF Original PDF
    TS0006T American Technical Ceramics Kits - Capacitor Kits - CAP KIT CERAMIC 10PF-100PF Original PDF
    TS0007T American Technical Ceramics Kits - Capacitor Kits - CAP KIT CERAMIC 0.1PF-2PF Original PDF
    TS0008T American Technical Ceramics Kits - Capacitor Kits - CAP KIT CERAMIC 1PF-10PF Original PDF
    TS0009T American Technical Ceramics Kits - Capacitor Kits - CAP KIT CERAMIC 10PF-240PF Original PDF

    TS000 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DIM500GCM33-TS000

    Abstract: DIM500GCM33-TS
    Text: DIM500GCM33-TS000 IGBT Chopper Module Replaces DS6098-2 DS6098-3 September 2014 LN31960 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max)


    Original     		PDF DIM500GCM33-TS000 DS6098-2 DS6098-3 LN31960) 65ames DIM500GCM33-TS000 DIM500GCM33-TS

    DIM1500ESM33-TS000

    Abstract: DIM1500ESM33-TS
    Text: DIM1500ESM33-TS000 Single Switch IGBT Module Replaces DS6072-5 DS6072-6 September 2014 LN31982 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  Soft Punch Through Silicon VCES VCE(sat) * (typ) IC (max) IC(PK)


    Original     		PDF DIM1500ESM33-TS000 DS6072-5 DS6072-6 LN31982) DIM1500ESM33-TS000 DIM1500ESM33-TS

    DIM400XSM45-TS000

    Abstract: No abstract text available
    Text: Data DIM400XSM45-TS000 Single Switch IGBT Module Replaces DS6150-1 DS6150-2 August 2014 LN31872 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ)


    Original     		PDF DIM400XSM45-TS000 DS6150-1 DS6150-2 LN31872) DIM400XSM45-TS000

    DIM250PHM33-TS000

    Abstract: DIM250PHM33-TS
    Text: DIM250PHM33-TS000 Half Bridge IGBT Module Replaces DS6092-1 DS6092-2 September 2014 LN31957 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC


    Original     		PDF DIM250PHM33-TS000 DS6092-1 DS6092-2 LN31957) DIM250PHM33-TS000 DIM250PHM33-TS

    TS0005A

    Abstract: No abstract text available
    Text: TAI-SAW TECHNOLOGY CO., LTD. No. 3, Industrial 2nd Rd., Ping-Chen Industrial District, Taoyuan, 324, Taiwan, R.O.C. TEL: 886-3-4690038 FAX: 886-3-4697532 E-mail: tstsales@mail.taisaw.com Web: www.taisaw.com SMD 5.0x7.0 LVPECL SAW OSCILLATOR MODEL NO.: TS0005A


    Original     		PDF TS0005A TS0005A

    Untitled

    Abstract: No abstract text available
    Text: DIM500GCM33-TS000 IGBT Chopper Module DS6098-1 May 2013 LN30465 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  Isolated AlSiC Base With AlN Substrates


    Original     		PDF DIM500GCM33-TS000 DS6098-1 LN30465) 2400ames

    Untitled

    Abstract: No abstract text available
    Text: DIM250PLM33-TS000 IGBT Chopper Module DS6108-1 June 2013 LN30636 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  Isolated AlSiC Base with AlN Substrates


    Original     		PDF DIM250PLM33-TS000 DS6108-1 LN30636) 240names

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Information Data DIM800XSM45-TS000 Single Switch IGBT Module Replaces DS6089-2 DS6089-3 April 2013 LN30438 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  Soft Punch Through Silicon VCES VCE(sat) * (typ)


    Original     		PDF DIM800XSM45-TS000 DS6089-2 DS6089-3 LN30438)

    Untitled

    Abstract: No abstract text available
    Text: DIM250PKM33-TS000 IGBT Chopper Module Replaces DS6106-1 DS6106-2 July 2013 LN30763 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max) IC(PK)


    Original     		PDF DIM250PKM33-TS000 DS6106-1 DS6106-2 LN30763)

    Untitled

    Abstract: No abstract text available
    Text: DIM250PLM33-TS000 IGBT Chopper Module Replaces DS6108-1 DS6108-2 July 2013 LN30764 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max) IC(PK)


    Original     		PDF DIM250PLM33-TS000 DS6108-1 DS6108-2 LN30764)

    DFM400XXM45-TS000

    Abstract: No abstract text available
    Text: DFM400XXM45-TS000 Fast Recovery Diode Module DS6128-1 October 2013 LN31067 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates  Dual Diodes Can Be Paralleled For 800A Rating


    Original     		PDF DFM400XXM45-TS000 DS6128-1 LN31067) DFM400XXM45-TS000

    DFM500XXM65-TS000

    Abstract: No abstract text available
    Text: Target Information DFM500XXM65-TS000 Fast Recovery Dual Diode Module DS6125-1 September 2013 LN30989 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base with AlN Substrates


    Original     		PDF DFM500XXM65-TS000 DS6125-1 LN30989) DFM500XXM65-TS000

    DIM400XCM45-TS000

    Abstract: No abstract text available
    Text: Data DIM400XCM45-TS000 IGBT Chopper Module Replaces DS6111-3 DS6111-4 August 2014 LN31873 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max)


    Original     		PDF DIM400XCM45-TS000 DS6111-3 DS6111-4 LN31873) DIM400XCM45-TS000

    DFM1000NXM33-TS000

    Abstract: No abstract text available
    Text: DFM1000NXM33-TS000 Fast Recovery Diode Module DS6094-1 April 2013 LN30404 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates  High Current Density Enhanced DMOS


    Original     		PDF DFM1000NXM33-TS000 DS6094-1 LN30404) DFM1000NXM33-TS000

    DFM250PXM33-TS000

    Abstract: No abstract text available
    Text: DFM250PXM33-TS000 Fast Recovery Diode Module DS6100-1 May 2013 LN30467 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates  High Current Density Enhanced DMOS


    Original     		PDF DFM250PXM33-TS000 DS6100-1 LN30467) DFM250PXM33-TS000

    Untitled

    Abstract: No abstract text available
    Text: DIM1000NSM33-TS000 Single Switch IGBT Module DS6093-1 April 2013 LN30403 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max) IC(PK) (max)


    Original     		PDF DIM1000NSM33-TS000 DS6093-1 LN30403)

    Untitled

    Abstract: No abstract text available
    Text: DIM1000ECM33-TS000 IGBT Chopper Module DS6091-1 April 2013 LN30401 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  Isolated AlSiC Base with AlN Substrates


    Original     		PDF DIM1000ECM33-TS000 DS6091-1 LN30401) DIM1000ECM33-TS000

    Untitled

    Abstract: No abstract text available
    Text: DFM800XXM45-TS000 Fast Recovery Diode Module DS6101-1 May 2013 LN30483 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates  Dual Diodes Can Be Paralleled For 1600A Rating


    Original     		PDF DFM800XXM45-TS000 DS6101-1 LN30483) DFM800XXM45-TS000

    Untitled

    Abstract: No abstract text available
    Text: DIM250PHM33-TS000 Half Bridge IGBT Module DS6092-1 April 2013 LN30402 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max) IC(PK) (max) 


    Original     		PDF DIM250PHM33-TS000 DS6092-1 LN30402)

    Untitled

    Abstract: No abstract text available
    Text: DIM500GDM33-TS000 Dual Switch IGBT Module DS6097-1 May 2013 LN30461 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  Isolated AlSiC Base with AlN Substrates


    Original     		PDF DIM500GDM33-TS000 DS6097-1 LN30461)

    DIM1000ECM33-TS000

    Abstract: DIM1000ECM33-TS
    Text: DIM1000ECM33-TS000 IGBT Chopper Module Replaces DS6091-2 DS6091-3 September 2014 LN31962 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max)


    Original     		PDF DIM1000ECM33-TS000 DS6091-2 DS6091-3 LN31962) DIM1000ECM33-TS000 DIM1000ECM33-TS

    Untitled

    Abstract: No abstract text available
    Text: Data DIM1200ASM45-TS000 Single Switch IGBT Module Replaces DS6102-3 DS6102-4 December 2014 LN32160 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ)


    Original     		PDF DIM1200ASM45-TS000 DS6102-3 DS6102-4 LN32160)

    DIM250PLM33-TS000

    Abstract: DIM250PLM33-TS
    Text: DIM250PLM33-TS000 IGBT Chopper Module Replaces DS6108-2 DS6108-3 September 2014 LN31958 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max)


    Original     		PDF DIM250PLM33-TS000 DS6108-2 DS6108-3 LN31958) 65names DIM250PLM33-TS000 DIM250PLM33-TS

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Information Data DIM400XCM45-TS000 IGBT Chopper Module DS6111-1 June 2013 LN30639 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC


    Original     		PDF DIM400XCM45-TS000 DS6111-1 LN30639)