2-30 pf trimmer
Abstract: No abstract text available
Text: The World Leader in the Design of Trimmer Capacitors. VOLTRONICS CORPORATION 100 Ford Road • Denville, New Jersey 07834 Phone: 973-586-8585 • Fax: 973-586-3404 Email: info@voltronicscorp.com "P" Series - Sealed Sapphire Trimmer Capacitors THE "P" LINE OFFERS:
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TT-100
TT-100
TT-200
TT-300
TT-400
TT-500
TT-600
TT-700
TT-900
2-30 pf trimmer
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RTW28-5R4C
Abstract: RTW50 RSEL-2002 RTW24-6R3C rtw24-13rh marking DIODE 2U 04 RSEL-2003W RSEL-2003 cold starting 100W150W
Text: RTW SERIES ks Unit type power supply 5 その他 医 療 計 測 F A 半導体 DENAN その他 Built to meet ph UL60950-1/ CSA C22.2 No.60950-1 その他 • Features コンピュータ pf-a hk-a hws EN60950-1/ EN50178 通 信 F A 半導体 ●W
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UL60950-1/
EN60950-1/
EN50178
EN61000-3-2
EN61000-4-2/3/4/5/6/8/11
0W/100W/150W
RTW28-5R4C
RTW50
RSEL-2002
RTW24-6R3C
rtw24-13rh
marking DIODE 2U 04
RSEL-2003W
RSEL-2003
cold starting
100W150W
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BY206
Abstract: BLW78 1206 resistor MGP560 mica trimmer capacitor polyester capacitor BR 8 TRANSISTOR
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW78 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor BLW78 It has a 1⁄2" flange envelope with a ceramic cap. All leads are isolated from the flange.
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BLW78
BY206
BLW78
1206 resistor
MGP560
mica trimmer capacitor
polyester capacitor
BR 8 TRANSISTOR
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WELLER EC 2001
Abstract: Weller EC2001 multiturn trimmer capacitor 2.22 pf trimmer working microwave product catalog
Text: NON-MAGNETIC CHIP CAPACITORS The first choice for NMR probes and MRI surface coils 11/2011 1_NM_ChipCapacitors_16Pger.indd 1 11/16/2011 11:37 PM Product Selection Guide Non-magnetic High Q Multi-layer Porcelain Chip Capacitors Generall Specifications Product
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16Pger
WELLER EC 2001
Weller EC2001
multiturn trimmer capacitor
2.22 pf trimmer working
microwave product catalog
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HF Reader Antenna Matching
Abstract: TRIMMER capacitor 5-60 pF atmel rfid reader schematic GRM1885C1H330GA01 GRM1555C1H102GA01 rfid reader schematic GRM1555C1H270GZ01 AT88RF1354 GRM1885C1H5R6B TZ03Z500F169B00
Text: High Frequency RFID Reader Antenna Matching 1. Introduction A high frequency reader system's magnetic field is used for tag power and communication. One factor determining the magnetic field's size and strength is antenna current. Increasing antenna current increases the
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AT88RF1354
HF Reader Antenna Matching
TRIMMER capacitor 5-60 pF
atmel rfid reader schematic
GRM1885C1H330GA01
GRM1555C1H102GA01
rfid reader schematic
GRM1555C1H270GZ01
GRM1885C1H5R6B
TZ03Z500F169B00
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2.22 pf trimmer
Abstract: TRIMMER capacitor 5-60 pF 2.22 pf trimmer working sprague 500d GMA40200 mica trimmer capacitor 50701 sprague capacitor 500d SG-500D GMA20200
Text: Sprague-Goodman ENGINEERING BULLETIN SG-500D Supercedes SG-500C MICA DIELECTRIC COMPRESSION TRIMMER CAPACITORS FEATURES • Very large capacitance ranges • Good RF current handling capability • High Q • Many forms and mounting styles SPECIFICATIONS Operating Temperature Range: –35°C to +85°C
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SG-500D
SG-500C
2.22 pf trimmer
TRIMMER capacitor 5-60 pF
2.22 pf trimmer working
sprague 500d
GMA40200
mica trimmer capacitor
50701
sprague capacitor 500d
SG-500D
GMA20200
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MRF321
Abstract: ferroxcube 56-590-65
Text: TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. The RF Line NPN Silicon MRF321 RF Power Transistor . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 200-500 MHz frequency range.
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MRF321
400MHz
1N4001
56-590-65/4B)
VK200-19/4B
MRF321
ferroxcube 56-590-65
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4000 WATT MOSFET amp
Abstract: wacom DU2880T TRIMMER capacitor 160 pF capacitor J 400
Text: an AMP comoanv RF MOSFET Power Transistor, 8OW, 28V 2 - 175 MHz DU2880T Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices Absolute Maximum Ratings at 25°C
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DU2880T
4000 WATT MOSFET amp
wacom
DU2880T
TRIMMER capacitor 160 pF
capacitor J 400
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b^E bbSS^l D 003^3^4 b37 BLW78 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, AB or B operated mobile, industrial and m ilitary transmitters in the h.f. and v.h.f. bands. It is resistance stabilized and is guaranteed to
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BLW78
bb53R3J
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BLW40
Abstract: gp 722
Text: Philips Semiconductors bbSBTBl ODSTaBS DTT ApX _BLW40 VHF power tra n s is to r_ AflER PHILIPS/DISCRETE FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability.
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BLW40
OT120
LA368
BLW40
gp 722
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J5021-0
Abstract: 1200W MOSFET power J50 mosfet
Text: an A M P co m p a n y RF MOSFET Power Transistor, 120W, 28V 2 - 1 7 5 MHz DU28120T V2.00 Features • • • • • N -Channel E n han cem en t M ode D evice DM OS Structure Low er C ap acitan ces for B roadb an d O p eration High Saturated O u tp u t Pow er
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DU28120T
4-40pF
1000pF
DU28120T
J5021-0
1200W MOSFET power
J50 mosfet
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ceramic capacitor 0.01uf
Abstract: AVO8 capacitor 50uf 4304 mosfet 60W 12V arco 462 TRIMMER capacitor
Text: AflkwßÄ W a n A M P com pany RF MOSFET Power Transistor, 60W, 12V 2 - 1 7 5 MHz DU1260T Features • • • • • • N -C hannel K nhancem ent M ode Device DMOS S tru ctu re Low er C apacitances for B ro a d b an d O p e ra tio n High S atu rated O u tp u t Pow er
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DU1260T
5-80pF
4-40pF
1000pF
DU1260T
ceramic capacitor 0.01uf
AVO8
capacitor 50uf
4304 mosfet
60W 12V
arco 462 TRIMMER capacitor
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BLW10
Abstract: BLW40 mcd202 philips Film-dielectric Trimmer Capacitors 808 RF POWER TRANSISTOR NPN vhf sot120 LA 4451 philips Trimmer 60 pf QDST337 BLw vhf
Text: Philips Semiconductors M b b S B 1^ ! DTT • AP X Productspecification VHF power tr a n s is to r _ BLW40 AMER PHILIPS/DISCRETE b^E » FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures
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BLW40
OT120
-SOT120
MBA451
BLW10
BLW40
mcd202
philips Film-dielectric Trimmer Capacitors 808
RF POWER TRANSISTOR NPN vhf
sot120
LA 4451
philips Trimmer 60 pf
QDST337
BLw vhf
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE fc^E D bbsa^i dos^ m tsd i IAPX BLW60C V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized
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BLW60C
nsforFigs16and17:
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bb.53331 □□33117 311 • APX BLV90/SL h3E D J V U H F POWER TRANSISTOR NPN silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 900 MHz band. Features: • diffused emitter-ballasting resistors for an optimum temperature profile.
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BLV90/SL
OT-172D)
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transistor 131 8D
Abstract: transistor k 3728 QBE+61.2+dp2
Text: N AMER PHILIPS/DISCRETE 86D OLE D T' 01928 ^53=131 DDimbt. 5 BLY90 A V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 12,5 V . The transistor is resistance stabilized. Every tran
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BLY90
transistor 131 8D
transistor k 3728
QBE+61.2+dp2
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arco mica trimmer
Abstract: arco TRIMMER capacitor
Text: Variable Compression Mica Trimmers and Padders Part Number Construction ST 0423 Type' | Numeric Designation! 1. 2. Tyge: ST; PC; C Numeric Designation: Indicates shape, construction, dimensions, and capacitance. STANDARD TRIMMERS These variable compression mica trimming capaci
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mcd206
Abstract: philips Trimmer 60 pf BLV13 MCD211 C106W
Text: Philips Sem iconductors VHF power transistor • bSE D DQbSûES P H IL IP S T ll PHI N Emitter-ballasting resistors for an optimum temperature profile Gold metallization ensures excellent reliability. IN T E R N A TIO N A L NPN silicon planar epitaxial transistor encapsulated in a 4-lead
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BLV13
OT123
PINNING-SOT123
MCD210
MBA451
MCD211
mcd206
philips Trimmer 60 pf
BLV13
MCD211
C106W
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BLW40
Abstract: MCD205 TLO 721
Text: Philips Sem iconductors I 7 1 1 DS2 b 0 0 t>3232 3 bS ^BPHIN PHILIPS INTERNATIONAL VHF power transistor FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability. Product specification
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711065b
00b3535
BLW40
OT120
PINNING-SOT120
BLW40
MCD205
TLO 721
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2222 031 capacitor philips
Abstract: TRANSISTOR 43IL 271 Ceramic Disc Capacitors BLF348 015 capacitor philips 2222 032 capacitor MKT Philips VCB228 Philips 2222 capacitor 2222 035 electrolytic capacitor
Text: P hilips Sem iconductors VHF linear push-pull power MOS transistor PH ILIPS T - tf- lZ INTERNATIONAL 5bE D 711 005b BLF348 D0M3RD3 031 H P H I N PIN CONFIGURATIO N FE A T U R E S • High power gain • Easy power control • Good thermal stability • Gold metallization ensures
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BLF348
711005b
2222 031 capacitor philips
TRANSISTOR 43IL
271 Ceramic Disc Capacitors
BLF348
015 capacitor philips
2222 032
capacitor MKT Philips
VCB228
Philips 2222 capacitor
2222 035 electrolytic capacitor
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blw95
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b'lE J> m bbS3T31 DQ2^SDb QbT IAPX B LW yt H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-AB operated high power industrial and military transmitting equipment in the h.f. band. The transistor presents excellent performance as a
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bbS3T31
0DS1S14
blw95
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Untitled
Abstract: No abstract text available
Text: m m m RF Products a Micmsemi Progress Powered by Technology 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Features 2 - 400 MHz 4 WATTS 28 VOLTS 14 dB MIN. AT 400 MHz
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MS4000
VK200-19/4B
MSC0877
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Untitled
Abstract: No abstract text available
Text: • m m RF Products m Micmsemi Progress Powered by Technology 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS F e a tu ie s 2 - 400 MHz 4 WATTS 28 VOLTS 14 dB MIN. AT 400 MHz
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MS4000
VK200-19/4B
MSC0877
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TRANSISTOR AH-10
Abstract: T800 equivalent T800 resistor 300 ohms
Text: w an A M P com pany RF MOSFET Power Transistor, 80W, 28V 2 - 1 7 5 MHz DU2880T V2.00 Features • • • • • N-Channel Enhancem ent Mode Device DMOS Structure Lower Capacitances for B roadband O peration High Saturated O utpu t Power Lower Noise Figure Than Com petitive Devices
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DU2880T
4-40pF
9-180pF
DU2880T
TRANSISTOR AH-10
T800 equivalent
T800
resistor 300 ohms
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