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    TRIANGLE MICROWAVE GA Search Results

    TRIANGLE MICROWAVE GA Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    ADL6010ACPZN-R7 Analog Devices Microwave Detector Visit Analog Devices Buy
    ADL6010ACPZN-R2 Analog Devices Microwave Detector Visit Analog Devices Buy
    ADL5721ACPZN-R7 Analog Devices Microwave HIR Visit Analog Devices Buy
    ADL6010SCPZN-R2 Analog Devices Microwave Detector Visit Analog Devices Buy
    ADL5723ACPZN-R7 Analog Devices Microwave HIR Visit Analog Devices Buy
    ADL6010ACPZN Analog Devices Microwave Detector Visit Analog Devices Buy

    TRIANGLE MICROWAVE GA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Triangle Microwave Digital Attenuator

    Abstract: Triangle Microwave GA GT atten KDI attenuator MCE OR KDI pin diode attenuator GT-50 GT attenuator voltage controlled KDI triangle 2-gt attenuator
    Text: ATTENUATORS, PIN DIODE SERIES GT, 1GT, 2GT, GA 0.25–18 G H z GENERAL INFORM TION A KDI/Triangle Pin Diode attenuators continuously change the amplitude of a microwave signal by applying a varying DC current, voltage, or digital signal, depending upon the Model type selected. The basic current controlled models do not have thermal compensation included, the voltage


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    Triangle Microwave Digital Attenuator

    Abstract: KDI attenuator Cannon connectors GT atten Triangle Microwave GA Triangle Microwave attenuator GT attenuator voltage controlled ITT Cannon GT-50 Attenuators
    Text: ATTENUATORS, PIN DIODE SERIES GT, 1GT, 2GT, GA 0.25–18 G H z GENERAL INFORM TION A KDI/Triangle Pin Diode attenuators continuously change the amplitude of a microwave signal by applying a varying DC current, voltage, or digital signal, depending upon the Model type selected. The basic current controlled models do not have thermal compensation included, the voltage


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    Triangle Microwave

    Abstract: RO4003 AN0005 CHA3092RBF
    Text: CHA3092RBF 20-33GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description Main Features The monolithic microwave IC MMIC in the package is a high gain broadband fourstage monolithic medium power amplifier. It is designed for a wide range of applications,


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    PDF CHA3092RBF 20-33GHz 20-33GHz 19dBm 300mA DSCHA3092RBF2057 -26-Feb Triangle Microwave RO4003 AN0005 CHA3092RBF

    Triangle Microwave

    Abstract: AN0005 CHA2098RBF RO4003 for all smd components STARTING 6
    Text: CHA2098RBF 20-33GHz High Gain Buffer Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description Main Features The monolithic microwave IC MMIC in the package is a high gain broadband threestage monolithic buffer amplifier. It is designed for a wide range of applications,


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    PDF CHA2098RBF 20-33GHz 20-40GHz 15dBm DSCHA2098RBF2057 -26-Feb Triangle Microwave AN0005 CHA2098RBF RO4003 for all smd components STARTING 6

    GaN ADS

    Abstract: Triangle Microwave cree Cree Microwave GaN amplifier PAE1 jammer nichrome GaN PA cree gate resistor
    Text: GaN MMIC Foundry Services GaN-based HEMTs Broadband performance - Enables high power, multi-octave bandwidth amplifiers Cree’s GaN HEMT MMIC processes are available for MMIC development using full-wafer service FWS or a shared multi-project MASK SET (SM) fabrication service. Customers can design into the foundry using


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    GaN ADS

    Abstract: cree led "silicon carbide" FET cree cree rf GaN hemt silicon carbide LED silicon carbide LED cree cree gan
    Text: GaN MMIC Foundry Services GaN-based HEMTs Broadband performance - Enables high power, multi-octave bandwidth amplifiers Cree’s GaN HEMT MMIC processes are available for MMIC development using standard full-wafer SFW service or a shared multi-project (SMP) “pizza mask” fabrication service. Customers can design into


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    Triangle Microwave

    Abstract: No abstract text available
    Text: APSIN12G Specification 1.03 March 14 Portable 12 GHz Microwave Signal Generator 1 Introduction The APSIN12G is a low-noise and fast-switching microwave signal generator covering a frequency range from 100 kHz up to 12 GHz. The APSIN12G a wide and accurately levelled output power range and high spurious


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    PDF APSIN12G IEEE-488 Triangle Microwave

    Untitled

    Abstract: No abstract text available
    Text: APSIN20G Specification 2.0 July 2014 Portable 20 GHz Microwave Signal Generator with Options HP, PE3, NM 1 Introduction The APSIN20G is a low-noise and fast-switching microwave signal generator covering a continuous frequency range from as low as 100 kHz up to 20.5 GHz with a 0.001 Hz


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    PDF APSIN20G APSIN20G-NM

    CGH40025P

    Abstract: CGH40010P cgh60015 GaN ADS Gan hemt transistor x band cgh40120F cgh40045f CGH60015D CGH60060D CGH60030D cgh60120D
    Text: General Purpose Wide Bandgap Transistors Gallium Nitride GaN HEMTs for Broadband Applications Broadband performance - Enables high power, multi-octave bandwidth amplifiers This “general purpose” discrete device series features Cree’s GaN HEMTs. These unmatched packaged transistors


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    Triangle Microwave

    Abstract: AN0005 CHT3091RCF RF Semiconductors ic smd Triangle Microwave attenuator
    Text: CHT3091RCF DC-40GHz Attenuator GaAs Monolithic Microwave IC in SMD leadless package Description Main Features The monolithic microwave IC MMIC in the package is a variable DC-40GHz attenuator. It is designed for a wide range of applications, from military to commercial


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    PDF CHT3091RCF DC-40GHz DC-40GHz 14dBm DSCHT3091RCF1257 14-Sept-01- Triangle Microwave AN0005 CHT3091RCF RF Semiconductors ic smd Triangle Microwave attenuator

    AN0005

    Abstract: CHX2090RBF RO4003 microwave IC SAs smd
    Text: CHX2090RBF 12-24GHz Frequency Multiplier GaAs Monolithic Microwave IC in SMD leadless package Description Main Features The monolithic microwave IC MMIC in the package is a cascadable by 2 frequency multiplier. It is designed for a wide range of applications, from military to commercial


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    PDF CHX2090RBF 12-24GHz 11-13GHz 13dBm 12dBm 15dBc DSCHX2090RBF2057 -26-Feb AN0005 CHX2090RBF RO4003 microwave IC SAs smd

    PCB Rogers RO4003

    Abstract: AN0005 CHA2066RBF RO4003 power amplifier 5 ghz
    Text: CHA2066RBF 10-16GHz Self biased Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description Main Features The monolithic microwave IC MMIC in the package is a two-stage self biased wide band monolithic low noise amplifier. • Broad band performance: 10-16GHz


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    PDF CHA2066RBF 10-16GHz 10-16GHz DSCHA2066RBF2057 -26-Feb PCB Rogers RO4003 AN0005 CHA2066RBF RO4003 power amplifier 5 ghz

    PCB Rogers RO4003

    Abstract: AN0005 CHA2098RBF RO4003 VD35
    Text: CHA2098RBF 20-33GHz High Gain Buffer Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description Main Features The monolithic microwave IC MMIC in the package is a high gain broadband threestage monolithic buffer amplifier. It is designed for a wide range of applications,


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    PDF CHA2098RBF 20-33GHz 20-40GHz 15dBm DSCHA2098RBF2057 -26-Feb PCB Rogers RO4003 AN0005 CHA2098RBF RO4003 VD35

    walkie-talkie

    Abstract: ELECTRO MAGNETIC INTERFERENCE CONTROL TECHNIQUES frequency hopping spread spectrum spread spectrum data modem DS1086 motherboard electronic circuit layout Generator voltage-controlled 3610 dallas
    Text: Application Note 1995 Using Spread-Spectrum Oscillators to Reduce Radiated Emissions in Consumer Products www.maxim-ic.com OVERVIEW In 1975 the Federal Communications Commission FCC , the government agency that regulates radio frequency (RF) emissions in the United States, enacted new regulations called FCC Part 15. These were not directed at


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    PDF 200ppm 300ppm. DS1086 pk/3610 walkie-talkie ELECTRO MAGNETIC INTERFERENCE CONTROL TECHNIQUES frequency hopping spread spectrum spread spectrum data modem motherboard electronic circuit layout Generator voltage-controlled 3610 dallas

    AN0005

    Abstract: CHA5390TBF RO4003
    Text: CHA5390TBF 24-30GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description Main Features The monolithic microwave IC MMIC in the package is a high gain broadband fourstage monolithic medium power amplifier. It is designed for a wide range of applications,


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    PDF CHA5390TBF 24-30GHz 24-30GHz 24dBm 460mA DSCHA5390TBF2011 -11-Jan AN0005 CHA5390TBF RO4003

    CHA5093TCF/24

    Abstract: RO4003 CHA5093TCF AN0005 Rogers RO4003 substrate
    Text: CHA5093TCF 24-26GHz High Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description Main Features The packaged monolithic microwave IC MMIC is a high gain three-stage monolithic high power amplifier. It is designed for a wide range of applications,


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    PDF CHA5093TCF 24-26GHz 24-26GHz 29dBm DSCHA50932035 04-Feb CHA5093TCF/24 RO4003 CHA5093TCF AN0005 Rogers RO4003 substrate

    AN0005

    Abstract: CHA5390TBF RO4003 PCB Rogers RO4003 substrate microwave IC 24-30GHz
    Text: CHA5390TBF 24-30GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description Main Features The monolithic microwave IC MMIC in the package is a high gain broadband fourstage monolithic medium power amplifier. It is designed for a wide range of applications,


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    PDF CHA5390TBF 24-30GHz 24-30GHz 24dBm 460mA DSCHA5390TBF2249 -06-Sept AN0005 CHA5390TBF RO4003 PCB Rogers RO4003 substrate microwave IC

    AN0005

    Abstract: CHA2066RBF RO4003
    Text: CHA2066RBF 10-16GHz Self biased Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description Main Features The monolithic microwave IC MMIC in the package is a two-stage self biased wide band monolithic low noise amplifier. • Broad band performance: 10-16GHz


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    PDF CHA2066RBF 10-16GHz 10-16GHz 13dBm DSCHA2066RBF2317 -13-Nov AN0005 CHA2066RBF RO4003

    AN0005

    Abstract: CHA3092RBF RO4003
    Text: CHA3092RBF 20-33GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description Main Features The monolithic microwave IC MMIC in the package is a high gain broadband fourstage monolithic medium power amplifier. It is designed for a wide range of applications,


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    PDF CHA3092RBF 20-33GHz 20-33GHz 19dBm 300mA DSCHA3092RBF2057 -26-Feb AN0005 CHA3092RBF RO4003

    Triangle Microwave rr

    Abstract: Triangle Microwave Digital Attenuator Triangle Microwave GA KDI attenuator MCE OR KDI pin diode attenuator KDI triangle 2-gt attenuator
    Text: ATTENUATORS, PIN DIODE SERIES GT, 1GT, 2GT, GA 0.25-18 GHz GENERAL INFORMATION KDI/Triangle Pin Diode attenuators continuously change the am plitude of a microwave signal by applying a varying DC current, voltage, or digital signal, depending upon the M odel type selected. The basic current con­


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    GT32T

    Abstract: No abstract text available
    Text: ATTENUATORS, PIN DIODE SERIES GT, 1GT, 2GT, GA 0.25-18 GHz GENERAL INFORMATION KDI/Triangle Pin Diode attenuators continuously change the am plitude of a microwave signal by applying a varying DC current, voltage, or digital signal, depending upon the Mode! type selected. T he basic current con­


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    KDI attenuator

    Abstract: Triangle Microwave digital attenuator df-1073 PPT Diode specifications
    Text: TECHNICAL OVERVIEW ATTENUATORS GENERAL INFORMATION Attenuators are commonly used to: 1 Reduce signal or power levels. 2) Provide isolation for improved impedance match between source and load. 3) Measure the gain or loss through substitution method. Three basic types of coaxial transmission line attenuators are presented in


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    Triangle Microwave

    Abstract: Triangle Microwave Digital Attenuator KDI attenuator Triangle Microwave attenuator attenuator MMIC
    Text: GaAs MMIC RF/Microwave switches operate in less than 100 ns from start of logic Laser calibrated thick film to within 9 9 % of final value •attenuator networks insure for attenuation of 0 to 63 dB ■attenuation accuracy to 0.25 dB in 1 dB increments. indnrall operating conditions.


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    Triangle Microwave GA

    Abstract: Triangle Microwave Digital Attenuator Triangle Microwave attenuator KDI attenuator GT32T
    Text: ATTENUATORS, PIN DIODE SERIES GT, 1GT, 2GT, GA 0.25-18 G H GENERAL INFORM 1AON KDIATriangle Pin Diode attenuators continuously change the am plitude of a microwave signal by applying a varying DC current, voltage, or digital signal, depending upon the Model type selected. The basic current con­


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