PQ62
Abstract: No abstract text available
Text: IBM11M4720D4M x 7212/11, 5.0V, AuMMDL08DSU-011033723. IBM11M4720D 4M x 72 DRAM MODULE Features • Optimized for byte-write parity applications • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • System Performance Benefits: - • 4Mx72 Fast Page Mode DIMM
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IBM11M4720D4M
AuMMDL08DSU-011033723.
IBM11M4720D
4Mx72
110ns
130ns
SA14-4602-03
PQ62
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IBM01178052M
Abstract: IBM0117805B2M IBM0117805M2M IBM0117805P2M
Text: IBM01178052M x 811/10, 5.0V, EDO. IBM0117805P2M x 811/10, 3.3V, EDO, LP, SR. IBM0117805M2M x 811/10, 5.0V, EDO, LP, SR. IBM0117805B2M x 811/10, 3.3V, EDO. IBM0117805 IBM0117805M IBM0117805B IBM0117805P 2M x 8 11/10 EDO DRAM Features • 2,097,152 word by 8 bit organization
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IBM01178052M
IBM0117805P2M
IBM0117805M2M
IBM0117805B2M
IBM0117805
IBM0117805M
IBM0117805B
IBM0117805P
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4221 transistor datasheet
Abstract: 4221
Text: Discontinued 9/98 - last order; 3/99 last ship IBM01178052M x 811/10, 5.0V, EDO. IBM0117805P2M x 811/10, 3.3V, EDO, LP, SR. IBM0117805M2M x 811/10, 5.0V, EDO, LP, SR. IBM0117805B2M x 811/10, 3.3V, EDO. IBM0117805 IBM0117805M IBM0117805B IBM0117805P 2M x 8 11/10 EDO DRAM
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IBM01178052M
IBM0117805P2M
IBM0117805M2M
IBM0117805B2M
IBM0117805
IBM0117805M
IBM0117805B
IBM0117805P
4221 transistor datasheet
4221
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HYM7V641601
Abstract: HYM7V641630
Text: 16Mx64 bit SDRAM Unbuffered DIMM F-Series based on 8Mx8 SDRAM, LVTTL, 2/4-Banks & 4K/8K-Refresh HYM7V641600/ HYM7V641601/ HYM7V641630/ HYM7V641631 DESCRIPTION The HYM7V641600/ 641601/ 641630/ 641631 F-Series are high speed 3.3-Volt synchronous dynamic RAM Modules composed of sixteen 8Mx8 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin TSSOP 2K
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16Mx64
HYM7V641600/
HYM7V641601/
HYM7V641630/
HYM7V641631
54-pin
168-pin
HYM7V641601
HYM7V641630
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HYM7V641601
Abstract: No abstract text available
Text: 16Mx64 bit SDRAM Unbuffered DIMM F-Series based on 8Mx8 SDRAM, LVTTL, 2/4-Banks & 4K/8K-Refresh HYM7V641600/ HYM7V641601/ HYM7V641630/ HYM7V641631 DESCRIPTION The HYM7V641600/ 641601/ 641630/ 641631 F-Series are high speed 3.3-Volt synchronous dynamic RAM Modules composed of sixteen 8Mx8 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin TSSOP 2K
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16Mx64
HYM7V641600/
HYM7V641601/
HYM7V641630/
HYM7V641631
54-pin
168-pin
HYM7V641601
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4221 transistor datasheet
Abstract: IBM01178052M IBM0117805B2M IBM0117805M2M IBM0117805P2M
Text: IBM01178052M x 811/10, 5.0V, EDO. IBM0117805P2M x 811/10, 3.3V, EDO, LP, SR. IBM0117805M2M x 811/10, 5.0V, EDO, LP, SR. IBM0117805B2M x 811/10, 3.3V, EDO. IBM0117805 IBM0117805M IBM0117805B IBM0117805P 2M x 8 11/10 EDO DRAM Features • 2,097,152 word by 8 bit organization
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IBM01178052M
IBM0117805P2M
IBM0117805M2M
IBM0117805B2M
IBM0117805
IBM0117805M
IBM0117805B
IBM0117805P
4221 transistor datasheet
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HYM7V641601
Abstract: HYM7V641630
Text: 16Mx64 bit SDRAM Unbuffered DIMM K-Series based on 16Mx4 SDRAM, LVTTL, 2/4-Banks & 4K/8K-Refresh HYM7V641600/ HYM7V641601/ HYM7V641630/ HYM7V641631 DESCRIPTION The HYM7V641600/ 641601/ 641630/ 641631 K-Series are high speed 3.3-Volt synchronous dynamic RAM Modules composed of sixteen 16Mx4 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin TSSOP 2K
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16Mx64
16Mx4
HYM7V641600/
HYM7V641601/
HYM7V641630/
HYM7V641631
54-pin
168-pin
HYM7V641601
HYM7V641630
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HYM7V64400
Abstract: HYM7V64401 byte24 HYM7V64431
Text: 4Mx64 bit SDRAM SO DIMM Q-Series based on 4Mx16 SDRAM, LVTTL, 2/4-Banks & 4K/8K-Refresh HYM7V64400/ HYM7V64401/ HYM7V64430/ HYM7V64431 DESCRIPTION The HYM7V64400/ 64401/ 64430/ 64431 Q-Series are high speed 3.3-Volt synchronous dynamic RAM Modules composed of four 4Mx16 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin TSSOP 2K bit
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4Mx64
4Mx16
HYM7V64400/
HYM7V64401/
HYM7V64430/
HYM7V64431
54-pin
144-pin
HYM7V64400
HYM7V64401
byte24
HYM7V64431
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hym7v64801
Abstract: No abstract text available
Text: 8Mx64 bit SDRAM SO DIMM Z-Series based on 8Mx8 SDRAM, LVTTL, 2/4-Banks & 4K/8K-Refresh HYM7V64800/ HYM7V64801/ HYM7V64830/ HYM7V64831 DESCRIPTION The HYM7V64800/ 64801/ 64830/ 64831 Z-Series are high speed 3.3-Volt synchronous dynamic RAM Modules composed of eight 8Mx8 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin TSSOP 2K bit
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8Mx64
HYM7V64800/
HYM7V64801/
HYM7V64830/
HYM7V64831
54-pin
144-pin
hym7v64801
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hym7v64801
Abstract: No abstract text available
Text: 8Mx64 bit SDRAM Unbuffered DIMM R-Series based on 4Mx16 SDRAM, LVTTL, 2/4-Banks & 4K/8K-Refresh HYM7V64800/ HYM7V64801/ HYM7V64830/ HYM7V64831 DESCRIPTION The HYM7V64800/ 64801/ 64830/ 64831 R-Series are high speed 3.3-Volt synchronous dynamic RAM Modules composed of eight 4Mx16 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin TSSOP 2K bit
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8Mx64
4Mx16
HYM7V64800/
HYM7V64801/
HYM7V64830/
HYM7V64831
54-pin
168-pin
hym7v64801
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Untitled
Abstract: No abstract text available
Text: 16Mx72 bit SDRAM Unbuffered DIMM F-Series based on 8Mx8 SDRAM, LVTTL, 2/4-Banks & 4K/8K-Refresh HYM7V72A1600/ HYM7V72A1601/ HYM7V72A1630/ HYM7V72A1631 DESCRIPTION The HYM7V72A1600/ 72A1601/ 72A1630/ 72A1 631 F-Series are high speed 3.3-Volt synchronous dynamic RAM Modules composed of eighteen 8Mx8 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin
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16Mx72
HYM7V72A1600/
HYM7V72A1601/
HYM7V72A1630/
HYM7V72A1631
72A1601/
72A1630/
54-pin
168-pin
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Untitled
Abstract: No abstract text available
Text: 8Mx72 bit SDRAM Unbuffered DIMM F-Series based on 8Mx8 SDRAM, LVTTL, 2/4-Banks & 4K/8K-Refresh HYM7V72A800/ HYM7V72A801/ HYM7V72A830/ HYM7V72A831 DESCRIPTION The HYM7V72A800/ 72A801/ 72A830/ 72A831 F-Series are high speed 3.3-Volt synchronous dynamic RAM Modules composed of nine 8Mx8 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin TSSOP 2K bit
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8Mx72
HYM7V72A800/
HYM7V72A801/
HYM7V72A830/
HYM7V72A831
72A801/
72A830/
72A831
54-pin
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HYM7V64400
Abstract: HYM7V64401 HYM7V64401TRG HYM7V64401TRG -10
Text: 4Mx64 bit SDRAM Unbuffered DIMM R-Series based on 4Mx16 SDRAM, LVTTL, 2/4-Banks & 4K/8K-Refresh HYM7V64400/ HYM7V64401/ HYM7V64430/ HYM7V64431 DESCRIPTION The HYM7V64400/ 64401/ 64430/ 64431 R-Series are high speed 3.3-Volt synchronous dynamic RAM Modules composed of four 4Mx16 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin TSSOP 2K bit
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4Mx64
4Mx16
HYM7V64400/
HYM7V64401/
HYM7V64430/
HYM7V64431
54-pin
168-pin
HYM7V64400
HYM7V64401
HYM7V64401TRG
HYM7V64401TRG -10
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HYM7V72A801
Abstract: HYM7V72A830
Text: 8Mx72 bit SDRAM Unbuffered DIMM F-Series based on 8Mx8 SDRAM, LVTTL, 2/4-Banks & 4K/8K-Refresh HYM7V72A800/ HYM7V72A801/ HYM7V72A830/ HYM7V72A831 DESCRIPTION The HYM7V72A800/ 72A801/ 72A830/ 72A831 F-Series are high speed 3.3-Volt synchronous dynamic RAM Modules composed of nine 8Mx8 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin TSSOP 2K bit
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8Mx72
HYM7V72A800/
HYM7V72A801/
HYM7V72A830/
HYM7V72A831
72A801/
72A830/
72A831
54-pin
HYM7V72A801
HYM7V72A830
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Untitled
Abstract: No abstract text available
Text: . IBM0118165 IBM0118165M IBM0118165B IBM0118165P 1M x 16 10/10 EDO DRAM Features • 1,048,576 word by 16 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 1024 Refresh Cycles - 16 ms Refresh Rate (SP version)
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IBM0118165
IBM0118165M
IBM0118165B
IBM0118165P
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IBM01161651M
Abstract: IBM0116165B1M IBM0116165M1M IBM0116165P1M
Text: IBM01161651M x 1612/8, 5.0V, EDO. IBM0116165P1M x 1612/8, 3.3V, EDO, LP, SR. IBM0116165M1M x 1612/8, 5.0V, EDO, LP, SR. IBM0116165B1M x 1612/8, 3.3V, EDO. IBM0116165 IBM0116165M IBM0116165B IBM0116165P 1M x 16 12/8 EDO DRAM Features • 1,048,576 word by 16 bit organization
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IBM01161651M
IBM0116165P1M
IBM0116165M1M
IBM0116165B1M
IBM0116165
IBM0116165M
IBM0116165B
IBM0116165P
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BYTE18
Abstract: HYM7V72A1601 time-10ns tras 36ns
Text: 16Mx72 bit SDRAM Unbuffered DIMM F-Series based on 8Mx8 SDRAM, LVTTL, 2/4-Banks & 4K/8K-Refresh HYM7V72A1600/ HYM7V72A1601/ HYM7V72A1630/ HYM7V72A1631 DESCRIPTION The HYM7V72A1600/ 72A1601/ 72A1630/ 72A1 631 F-Series are high speed 3.3-Volt synchronous dynamic RAM Modules composed of eighteen 8Mx8 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin
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16Mx72
HYM7V72A1600/
HYM7V72A1601/
HYM7V72A1630/
HYM7V72A1631
72A1601/
72A1630/
54-pin
168-pin
BYTE18
HYM7V72A1601
time-10ns
tras 36ns
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Untitled
Abstract: No abstract text available
Text: 8Mx64 bit SDRAM Unbuffered DIMM F-Series based on 8Mx8 SDRAM, LVTTL, 2/4-Banks & 4K/8K-Refresh HYM7V64800/ HYM7V64801/ HYM7V64830/ HYM7V64831 DESCRIPTION The HYM7V64800/ 64801/ 64830/ 64831 F-Series are high speed 3.3-Volt synchronous dynamic RAM Modules composed of eight 8Mx8 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin TSSOP 2K bit
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8Mx64
HYM7V64800/
HYM7V64801/
HYM7V64830/
HYM7V64831
54-pin
168-pin
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Untitled
Abstract: No abstract text available
Text: Discontinued 9/98 - last order; 3/99 last ship IBM01161651M x 1612/8, 5.0V, EDOMMDD61DSU-001015031. IBM0116165P1M x 1612/8, 3.3V, EDO, LP, SRMMDD61DSU-001015031. IBM0116165M1M x 1612/8, 5.0V, EDO, LP, SRMMDD61DSU-001015031. IBM0116165B1M x 1612/8, 3.3V, EDOMMDD61DSU-001015031.
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IBM01161651M
EDOMMDD61DSU-001015031.
IBM0116165P1M
SRMMDD61DSU-001015031.
IBM0116165M1M
IBM0116165B1M
IBM0116165
IBM0116165M
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IBM01181651M
Abstract: IBM0118165B1M IBM0118165M1M IBM0118165P1M ibm 9398
Text: Discontinued 9/98 - last order; 3/99 last ship IBM01181651M x 1610/10, 5.0V, EDOMMDD59DSU-001014332. IBM0118165P1M x 1610/10, 3.3V, EDO, LP, SRMMDD59DSU-001014332. IBM0118165M1M x 1610/10, 5.0V, EDO, LP, SRMMDD59DSU-001014332. IBM0118165B1M x 1610/10, 3.3V, EDOMMDD59DSU-001014332.
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IBM01181651M
EDOMMDD59DSU-001014332.
IBM0118165P1M
SRMMDD59DSU-001014332.
IBM0118165M1M
IBM0118165B1M
IBM0118165
IBM0118165M
ibm 9398
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lp 1610
Abstract: IBM01181651M IBM0118165B1M IBM0118165M1M IBM0118165P1M
Text: IBM01181651M x 1610/10, 5.0V, EDO. IBM0118165P1M x 1610/10, 3.3V, EDO, LP, SR. IBM0118165M1M x 1610/10, 5.0V, EDO, LP, SR. IBM0118165B1M x 1610/10, 3.3V, EDO. IBM0118165 IBM0118165M IBM0118165B IBM0118165P 1M x 16 10/10 EDO DRAM Features • 1,048,576 word by 16 bit organization
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IBM01181651M
IBM0118165P1M
IBM0118165M1M
IBM0118165B1M
IBM0118165
IBM0118165M
IBM0118165B
IBM0118165P
lp 1610
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Untitled
Abstract: No abstract text available
Text: . IBM0118165 IBM0118165M IBM0118165B IBM0118165P 1M x 16 10/10 EDO DRAM Features • 1,048,576 word by 16 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 1024 Refresh Cycles - 16 ms Refresh Rate (SP version)
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IBM0118165
IBM0118165M
IBM0118165B
IBM0118165P
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KM48S2020A
Abstract: km48s2020at K/A8-A10 050S53 1994 sdram 002G5 D02g DD2054 samsung AND 1994 AND sdram
Text: PRELIMINARY * KM48S2020A CMOS SDRAM 2M X 8 BIT SYNCHRONOUS DYNAMIC RAM GENERAL DESCRIPTION FEA TU RES - JED EC standard 3.3V power supply. - LVTTL compatible with multiplexed address. - Dual bank / Pulse RAS. - W CBR cycle with address key programs. •Latency Access from column address
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KM48S2020A
KM48S2020A
0020SflS
km48s2020at
K/A8-A10
050S53
1994 sdram
002G5
D02g
DD2054
samsung AND 1994 AND sdram
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KM44S4020AT10
Abstract: KM44S4020A
Text: PRELIMINARY KM44S4020A 4M X CMOS SDRAM 4 BIT SYNCHRONOUS DYNAMIC RAM GENERAL DESCRIPTION FEATURES - JEDEC standard 3.3V power supply. - LVTTL compatible with multiplexed address. - Dual bank / Pulse ftAS. - WCBR cycle with address key programs. • Latency Access from column address
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KM44S4020A
KM44S4020A
G02054b
KM44S4020AT10
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