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    TRANSISTORS SILICIUM, BASE EPITAXIEE Search Results

    TRANSISTORS SILICIUM, BASE EPITAXIEE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTORS SILICIUM, BASE EPITAXIEE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ESM133

    Abstract: No abstract text available
    Text: ESM 132 ESM 133 PNP SILICON TRANSISTORS, EPITAXIAL BASE TRANSISTORS SILICIUM PNP, BASE EPITAXIEE ESM 134 Compl. of 2N 5294, 2N 5296, 2N 5298 PRELIM INARY DATA NOTICE PRELIM IN AIR E - LF amplification stages complementary symetry -7 0 V - Switching (-6 0 V


    OCR Scan     		PDF ESM133 T0-220 drawingCB-117on CB-117

    BO 241 A

    Abstract: bd2410 BD241 TF 241 BD NPN transistors BD - 100 V jc31 241B BD 241 7410
    Text: BD 241, BD 241 A BD 241B. BD 241C NPN SILICON TRANSISTORS, EP ITAXIAL BASE TRANSISTORS NPN SILICIUM. BASE EPITAXIEE Compf. of BO 242, A, B, C P R ELIM INARY DATA NOTICE PRELIMINAIRE - Complementary symetry stages amplifiers /4 5 V I 60 V 180 V *1 0 0 V 3 A


    OCR Scan     		PDF O-220 drawingCB-117on BO 241 A bd2410 BD241 TF 241 BD NPN transistors BD - 100 V jc31 241B BD 241 7410

    amplificateur

    Abstract: vertical tv deflexion BD233 bo236 BD NPN transistors bd 233 bd 237
    Text: NPN SILICON TRANSISTORS, E P IT A X IA L BASE BD 233 TRANSISTORS SILICIUM NPN, BASE EPITAXIEE gg 2 .3 5 BD 237 Compl. o f BD 234, BO 236, BD 238 P R E LIM IN A R Y D A T A NOTICE PRELIMINAIRE These transistors are intended fo r complemen­ ta ry or quasi complementary sym etry amplifiers :


    OCR Scan     		PDF

    D 5038 Transistor Horizontal

    Abstract: amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58
    Text: POWER TRANSISTORS TRANSISTORS DE PUISSANCE 1975 NPN S ILIC O N TR A N S IS TO R S , D IF F U S E D MESA TR A N S IS TO R S NP N S IL IC IU M , M ESA D IF F U S E S 2N 1209 • LF large signal amplification A m p lific a tio n B F grands signaux - High current switching


    OCR Scan     		PDF CB-69 14f4g D 5038 Transistor Horizontal amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58