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    TRANSISTORS MOSFET P CHANNEL Search Results

    TRANSISTORS MOSFET P CHANNEL Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK5R3E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.0053 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTORS MOSFET P CHANNEL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: US6J2 Transistors 2.5V Drive Pch+Pch MOSFET US6J2 zStructure Silicon P-channel MOSFET zDimensions Unit : mm TUMT6 0.2Max. zFeatures 1) Two Pch MOSFET transistors in a single TUMT6 package. 2) Mounting cost and area can be cut in half. 3) Low on-resistance.


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    IC1 CA3130 CURRENT TO VOLTAGE CONVERTER

    Abstract: CA3130 peak detector about the IC ca3130 CA3130 CA3130 data sheet 2n3055 pinout ca3130 equivalent operational amplifier discrete schematic timer astable multivibrator 2n3055 terminals of 2n3055
    Text: CA3130, CA3130A Data Sheet October 2002 15MHz, BiMOS Operational Amplifier with MOSFET Input/CMOS Output CA3130A and CA3130 are op amps that combine the advantage of both CMOS and bipolar transistors. Gate-protected P-Channel MOSFET PMOS transistors are


    Original     		PDF CA3130, CA3130A 15MHz, CA3130A CA3130 IC1 CA3130 CURRENT TO VOLTAGE CONVERTER CA3130 peak detector about the IC ca3130 CA3130 data sheet 2n3055 pinout ca3130 equivalent operational amplifier discrete schematic timer astable multivibrator 2n3055 terminals of 2n3055

    CA3130

    Abstract: CA3130 peak detector IC1 CA3130 CURRENT TO VOLTAGE CONVERTER about the IC ca3130 CA3130 data sheet ca3130 equivalent IC1 CA3130 ca3130 equivalents CA3130 as a low pulse generator 2N3055 inverter schematic diagram
    Text: CA3130, CA3130A Data Sheet August 1, 2005 15MHz, BiMOS Operational Amplifier with MOSFET Input/CMOS Output CA3130A and CA3130 are op amps that combine the advantage of both CMOS and bipolar transistors. Gate-protected P-Channel MOSFET PMOS transistors are


    Original     		PDF CA3130, CA3130A 15MHz, CA3130A CA3130 CA3130 peak detector IC1 CA3130 CURRENT TO VOLTAGE CONVERTER about the IC ca3130 CA3130 data sheet ca3130 equivalent IC1 CA3130 ca3130 equivalents CA3130 as a low pulse generator 2N3055 inverter schematic diagram

    FN817

    Abstract: equivalent ic of ca 3130 CA 3130 SCHEMATIC DIAGRAM CA3130 IC1 CA3130 intersil CURRENT TO VOLTAGE CONVERTER IC1 CA3130 CURRENT TO VOLTAGE CONVERTER ca3130 equivalent 2n3055 pinout CA3130EZ 2N3055 mosfet
    Text: CA3130, CA3130A Data Sheet August 1, 2005 15MHz, BiMOS Operational Amplifier with MOSFET Input/CMOS Output CA3130A and CA3130 are op amps that combine the advantage of both CMOS and bipolar transistors. Gate-protected P-Channel MOSFET PMOS transistors are


    Original     		PDF CA3130, CA3130A 15MHz, CA3130A CA3130 FN817 equivalent ic of ca 3130 CA 3130 SCHEMATIC DIAGRAM IC1 CA3130 intersil CURRENT TO VOLTAGE CONVERTER IC1 CA3130 CURRENT TO VOLTAGE CONVERTER ca3130 equivalent 2n3055 pinout CA3130EZ 2N3055 mosfet

    Untitled

    Abstract: No abstract text available
    Text: US6M2 Transistors 2.5V Drive Nch+Pch MOSFET US6M2 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) High-speed switching, low On-resistance.


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    20V P-Channel Power MOSFET

    Abstract: US6M2
    Text: US6M2 Transistors 2.5V Drive Nch+Pch MOSFET US6M2 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) High-speed switching, low On-resistance.


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    CA3600E

    Abstract: 2n3055 pinout terminals of 2n3055 2N3055 inverter schematic diagram 2n3055 voltage regulator HCA10014 1A Dual Power Operational Amplifier t 2N3055 1N914 CA3085
    Text: HCA10014 Data Sheet 15MHz, BiMOS Operational Amplifier with MOSFET Input/CMOS Output HCA10014 op amp combines the advantage of both CMOS and bipolar transistors. Gate protected P-Channel MOSFET PMOS transistors are used in the input circuit to provide very high input


    Original     		PDF HCA10014 15MHz, HCA10014 CA3600E 2n3055 pinout terminals of 2n3055 2N3055 inverter schematic diagram 2n3055 voltage regulator 1A Dual Power Operational Amplifier t 2N3055 1N914 CA3085

    Untitled

    Abstract: No abstract text available
    Text: EM6M1 Transistors 2.5V Drive Nch+Pch MOSFET EM6M1 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm EMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (2.5V drive).


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    QS6M4

    Abstract: No abstract text available
    Text: QS6M4 QS6M4 Transistors 2.5V Drive Nch+Pch MOSFET QS6M4 zDimensions Unit : mm zStructure Silicon P-channel MOSFET Silicon N-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6M4 combines Pch MOSFET with a Nch MOSFET in a single TSMT6 package.


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    EM6M1

    Abstract: MOSFET IGSS 100A
    Text: EM6M1 Transistors 2.5V Drive Nch+Pch MOSFET EM6M1 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm EMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (2.5V drive).


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    block diagram of ca3130

    Abstract: CA3130 pin diagram of IC ca3130 IC1 CA3130 CURRENT TO VOLTAGE CONVERTER ca3130 equivalent Ic2 ca3130 about the IC ca3130 IC1 CA3130 CA3130T CA3600E
    Text: CA3130, CA3130A Data Sheet 15MHz, BiMOS Operational Amplifier with MOSFET Input/CMOS Output CA3130A and CA3130 are op amps that combine the advantage of both CMOS and bipolar transistors. Gate-protected P-Channel MOSFET PMOS transistors are used in the input circuit to provide very-high-input


    Original     		PDF CA3130, CA3130A 15MHz, CA3130A CA3130 -55oC block diagram of ca3130 pin diagram of IC ca3130 IC1 CA3130 CURRENT TO VOLTAGE CONVERTER ca3130 equivalent Ic2 ca3130 about the IC ca3130 IC1 CA3130 CA3130T CA3600E

    NUS3116MT

    Abstract: No abstract text available
    Text: NUS3116MT Main Switch Power MOSFET and Dual Charging BJT -12 V, -6.2 A, mCoolE Single P-Channel with Dual PNP low Vce sat Transistors, 3x3Ămm WDFN Package This device integrates one high performance power MOSFET and two low Vce(sat) transistors, greatly reducing the layout space and


    Original     		PDF NUS3116MT NUS3116MT/D NUS3116MT

    ca3130 equivalent

    Abstract: CA3130 CA3130E CA3130EZ FN817 pinout of CA3130 CA3130A ca3130 for free CA3130AE equivalent of ca3130e
    Text: CA3130, CA3130A Data Sheet FN817.6 15MHz, BiMOS Operational Amplifier with MOSFET Input/CMOS Output CA3130A and CA3130 are op amps that combine the advantage of both CMOS and bipolar transistors. Gate-protected P-Channel MOSFET PMOS transistors are used in the input circuit to provide very-high-input


    Original     		PDF CA3130, CA3130A FN817 15MHz, CA3130A CA3130 ca3130 equivalent CA3130E CA3130EZ pinout of CA3130 ca3130 for free CA3130AE equivalent of ca3130e

    AYWW marking code IC

    Abstract: NUS3116MT NUS3116MTR2G OF BJT 547
    Text: NUS3116MT Main Switch Power MOSFET and Dual Charging BJT -12 V, -6.2 A, mCoolE Single P-Channel with Dual PNP low Vce sat Transistors, 3x3Ămm WDFN Package This device integrates one high performance power MOSFET and two low Vce(sat) transistors, greatly reducing the layout space and


    Original     		PDF NUS3116MT NUS3116MT/D AYWW marking code IC NUS3116MT NUS3116MTR2G OF BJT 547

    2N7236U

    Abstract: smd 2f IRFN9140 JANTX2N7236U JANTXV2N7236U
    Text: PD-91553C IRFN9140 JANTX2N7236U JANTXV2N7236U HEXFET POWER MOSFET [REF:MIL-PRF-19500/595] P - CHANNEL Ω MOSFET -100 Volt, 0.20Ω Product Summary ® HEXFET power MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry


    Original     		PDF PD-91553C IRFN9140 JANTX2N7236U JANTXV2N7236U MIL-PRF-19500/595] 2N7236U smd 2f IRFN9140 JANTX2N7236U JANTXV2N7236U

    QS6M4

    Abstract: No abstract text available
    Text: QS6M4 Transistors 2.5V Drive Nch+Pch MOSFET QS6M4 Dimensions Unit : mm Structure Silicon P-channel MOSFET Silicon N-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 (6) 0.85 0.7 (4) 1.6 2.8 Features 1) The QS6M4 combines Pch MOSFET with a Nch MOSFET in a single TSMT6 package.


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    Untitled

    Abstract: No abstract text available
    Text: RSL020P03 Transistors 4V Drive Pch MOSFET RSL020P03 zStructure Silicon P-channel MOSFET zDimensions Unit : mm TUMT6 0.2Max. zFeatures 1) Low On-resistance. 2) High speed switching. zApplications Switching Abbreviated symbol : SL zPackaging specifications


    Original     		PDF RSL020P03

    RSL020P03

    Abstract: P-channel power mosfet 30V
    Text: RSL020P03 Transistors 4V Drive Pch MOSFET RSL020P03 zStructure Silicon P-channel MOSFET zDimensions Unit : mm TUMT6 0.2Max. zFeatures 1) Low On-resistance. 2) High speed switching. zApplications Switching Abbreviated symbol : SL zPackaging specifications


    Original     		PDF RSL020P03 RSL020P03 P-channel power mosfet 30V

    QS6M4

    Abstract: No abstract text available
    Text: QS6M4 Transistors 2.5V Drive Nch+Pch MOSFET QS6M4 zDimensions Unit : mm zStructure Silicon P-channel MOSFET Silicon N-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6M4 combines Pch MOSFET with a Nch MOSFET in a single TSMT6 package. 2) Low on-state resistance with a fast switching.


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    TSMT6

    Abstract: voltage source inverter z source inverter QS6M4
    Text: QS6M4 Transistors 2.5V Drive Nch+Pch MOSFET QS6M4 zDimensions Unit : mm zStructure Silicon P-channel MOSFET Silicon N-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6M4 combines Pch MOSFET with a Nch MOSFET in a single TSMT6 package. 2) Low on-state resistance with a fast switching.


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    Piezoelectric 1Mhz

    Abstract: p-channel 250V power mosfet P-channel Dual MOSFET VGS -25V high voltage piezoelectric transducer 27BSC MD1210K6 TC1550 TC1550TG-G 10nF 250v P-channel MOSFET VGS -25V
    Text: TC1550 N- and P-Channel Enhancement-Mode Dual MOSFET Features General Description ► ► ► ► ► ► ► The Supertex TC1550TG-G consists of a high voltage Nchannel and P-channel MOSFET in an SO-8 package. These are enhancement-mode normally-off transistors


    Original     		PDF TC1550 TC1550TG-G 27BSC DSFP-TC1550 NR011707 Piezoelectric 1Mhz p-channel 250V power mosfet P-channel Dual MOSFET VGS -25V high voltage piezoelectric transducer 27BSC MD1210K6 TC1550 10nF 250v P-channel MOSFET VGS -25V

    RSF010P03

    Abstract: No abstract text available
    Text: RSF010P03 Transistors 4V Drive Pch MOSFET RSF010P03 zStructure Silicon P-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT3 zFeatures 1) Low on-resistance. 2) High speed switching. zApplications Switching (1) Gate (2) Source zPackaging specifications zInner circuit


    Original     		PDF RSF010P03 RSF010P03

    TUMT6

    Abstract: RZL025P01 12a50
    Text: RZL025P01 Transistors 1.5V Drive Pch MOSFET RZL025P01 zDimensions Unit : mm zStructure Silicon P-channel MOSFET 0.2Max. TUMT6 zFeatures 1) Low on-resistance. 2) High power package. 3) Low voltage drive. (1.5V) Abbreviated symbol : YC zApplication Switching


    Original     		PDF RZL025P01 TUMT6 RZL025P01 12a50

    amplifier marking code a c8g

    Abstract: CMLDM8120 C81 diode
    Text: Central CMLDM8120 CMLDM8120G* SURFACE MOUNT PICOminiTM P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET TM Semiconductor Corp. DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are Enhancement-mode P-Channel Field Effect Transistors, manufactured by the P-Channel DMOS Process,


    Original     		PDF CMLDM8120 CMLDM8120G* CMLDM8120: OT-563 8120G* amplifier marking code a c8g CMLDM8120 C81 diode