Q62702F1240
Abstract: f 840 h marking NC
Text: SIEMENS NPN Silicon RF Transistors BF 840 BF 841 • Suitable for com m on emitter R F, IF amplifiers • Low collector-base capacitance due to contact shield diffusion • Low output conductance Type Marking Ordering Code PinC 'onfigu •ation 1 2 3 Package1
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Q62702-F1240
62702-F1287
Q62702F1240
f 840 h
marking NC
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TRANSISTOR MARKING YB 1L
Abstract: 2SK 2SA 2SC equivalent ON 4497 HF transistor 1B01F transistor 2sc 1586 i203 transistor transistor 2sk power amp transistor bc 2sk transistor 2sk 70 TBC846
Text: 2. List of Principal Characteristics of Transistors 2. List of Principal Characteristics of Transistors 2.1 Small Super Mini Type SSM < T ra n s is to r for G eneral Purpose, Low Frequency E q u ip m e n t> VCEtMÜ MAX. hFE Type No. V CEO (V) NPN PNP 2SC 4738
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2SC4841
OT89/SC62)
TRANSISTOR MARKING YB 1L
2SK 2SA 2SC equivalent
ON 4497 HF transistor
1B01F
transistor 2sc 1586
i203 transistor
transistor 2sk power amp
transistor bc 2sk
transistor 2sk 70
TBC846
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TRANSISTOR HK SMD
Abstract: smd ic marking HL smd marking HK transistors marking HK HL 100 Transistor HL 06 ic 2SD1006
Text: Transistors SMD Type NPN Silicon Epitaxial Transistor 2SD1006 Features High collector to emitter voltage: VCEO 100V. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 100 V Collector-emitter voltage VCEO 100 V Emitter-base voltage
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2SD1006
100mA
500mA
-10mA
TRANSISTOR HK SMD
smd ic marking HL
smd marking HK
transistors marking HK
HL 100 Transistor
HL 06 ic
2SD1006
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR92A9J Silicon NPN epitaxial planar type For digital circuits • Features 1.00±0.05 Optimum for high-density mounting and downsizing of the equipment
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2002/95/EC)
UNR92A9J
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j3y transistor
Abstract: transistor j3y MARKING J3Y S8050LT1 SOT-23 J3Y s8050l S8050LT1-J3Y sot-23 Marking J3Y transistors marking HK S8050LT1 J3Y
Text: PLASTIC-ENCAPSULATE TRANSISTORS S8050LT1 S8050LT1 TRANSISTOR（ NPN ） SOT— —23 FEATURES Power dissipation 0.3 PCM : Collector current 0.5 ICM : Collector-base voltage V BR CBO : 40 W（Tamb=25℃） 1. BASE A 2. EMITTER 3. COLLECTOR V CHARACTERISTICS（
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S8050LT1
OT--23
500mA
100mA
30MHz
S8050LT1
j3y transistor
transistor j3y
MARKING J3Y
SOT-23 J3Y
s8050l
S8050LT1-J3Y
sot-23 Marking J3Y
transistors marking HK
S8050LT1 J3Y
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification 2SD1006 Features High collector to emitter voltage: VCEO 100V. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 100 V Collector-emitter voltage VCEO 100 V Emitter-base voltage
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2SD1006
100mA
500mA
-10mA
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32A9 Silicon NPN epitaxial planar type Unit: mm For digital circuits 0.33+0.05 –0.02 0.10+0.05 –0.02 5° 2 (0.40) (0.40) 0.80±0.05 1.20±0.05 • Absolute Maximum Ratings Ta = 25°C
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2002/95/EC)
UNR32A9
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR92A9J Silicon NPN epitaxial planar type For digital circuits • Features 1.00±0.05 Optimum for high-density mounting and downsizing of the equipment
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2002/95/EC)
UNR92A9J
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32A9G Silicon NPN epitaxial planar type For digital circuits • Features ■ Package • Suitable for high-density mounting downsizing of the equipment • Contribute to low power consumption
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2002/95/EC)
UNR32A9G
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR52A9G Silicon NPN epitaxial planar type For digital circuits • Features Package Costs can be reduced through downsizing of the equipment and reduction of
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2002/95/EC)
UNR52A9G
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR92A9G Silicon NPN epitaxial planar type For digital circuits • Features Package Optimum for high-density mounting and downsizing of the equipment
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2002/95/EC)
UNR92A9G
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32A9 Silicon NPN epitaxial planar type Unit: mm For digital circuits 0.33+0.05 –0.02 0.10+0.05 –0.02 5° 2 (0.40) (0.40) 0.80±0.05 1.20±0.05 • Absolute Maximum Ratings Ta = 25°C
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2002/95/EC)
UNR32A9
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1110 DFN8
Abstract: SBOS686 marking LT8
Text: TMP451 www.ti.com SBOS686 – JUNE 2013 ±1°C Remote and Local Temperature Sensor with η-Factor and Offset Correction, Series Resistance Cancellation, and Programmable Digital Filter Check for Samples: TMP451 FEATURES DESCRIPTION • The TMP451 is a high-accuracy, low-power remote
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TMP451
SBOS686
TMP451
1110 DFN8
SBOS686
marking LT8
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marking MN sot-23
Abstract: SOT-23 MARKING mn
Text: MOTOROLA Order this document by MM B06050LT1 ID SEMICONDUCTOR TECHNICAL DATA Switching Diode CATHODE % ANODE 1 MAXIMUM RATINGS Symbol Value Unit Reverse Voltage Vr 70 Vdc Forward Current if 200 mAdc *FM surge 500 mAdc Symbol Max Unit Pd 225 mW 1.8 mW/°C
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B06050LT1
OT-23
O-236AB)
MMBD6050LT1/D
marking MN sot-23
SOT-23 MARKING mn
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR92A9G Silicon NPN epitaxial planar type For digital circuits • Package Optimum for high-density mounting and downsizing of the equipment Contribute to low power consumption
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2002/95/EC)
UNR92A9G
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2SK543
Abstract: No abstract text available
Text: SANYO SEMICONDUCTOR CORP SSE D 7*n7Q7b OOObTSO 2SK543 7 T-31-ZS ♦ N -C h an n el M O S Silicon FET 2024A FM Tuner, VHF-Band Amp Applications 1791C Features . Low noise. NF=1.8dB typ f=100MHz • High power gain. PG=27dB typ(f=100MHz) . Small reverse transfer capacitance. cras=0.035pF(VDS=10V,f=1MHz)
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2SK543
1791C
100MHz)
035pF
100uA
2SK543
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3904S
Abstract: wi fi marking code transistor HK
Text: SIEMENS SMBT 3904S NPN Silicon Switching Transistor Array 4 • High DC current gain: 0.1mA to 100mA 5 • Low collector-emitter saturation voltage 6 ^ ^ • Two galvanic internal isolated Transistors with high matching in one package • Complementary type: SM BT 3906S (PNP)
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3904S
100mA
3906S
VPS05604
EHA07178
Q62702-A1201
OT-363
3904S
wi fi
marking code transistor HK
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1.5SMC27AT3G
Abstract: No abstract text available
Text: Document Number: MMG1001NT1 Rev. 8, 3/2007 Freescale Semiconductor Technical Data Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Built - in Input Diode Protection • GaAs FET Transistor Technology
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MMG1001NT1
DataMMG1001NT1
1.5SMC27AT3G
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Untitled
Abstract: No abstract text available
Text: TMP421 TMP422 TMP423 www.ti.com SBOS398C – JULY 2007 – REVISED MAY 2012 ±1°C Remote and Local TEMPERATURE SENSOR Check for Samples: TMP421, TMP422, TMP423 FEATURES DESCRIPTION • • • • • • • • • The TMP421, TMP422, and TMP423 are remote
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TMP421
TMP422
TMP423
SBOS398C
TMP421,
TMP422,
TMP423
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Untitled
Abstract: No abstract text available
Text: TMP441 TMP442 www.ti.com . SBOS425A – DECEMBER 2008 – REVISED MARCH 2009 ±1°C TEMPERATURE SENSOR with Automatic Beta Compensation,
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TMP441
TMP442
SBOS425A
OT23-8
OT23-8
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Untitled
Abstract: No abstract text available
Text: TM TMP431 TMP432 P432 www.ti.com SBOS441F – SEPTEMBER 2009 – REVISED AUGUST 2013 ±1°C Temperature Sensor with Series-R, η-Factor, and Automatic Beta Compensation Check for Samples: TMP431, TMP432 FEATURES DESCRIPTION • • • • • • • The TMP431 and TMP432 are remote temperature
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TMP431
TMP432
SBOS441F
TMP431,
TMP431
TMP432
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ac-dc voltage regulator using SCR
Abstract: ac-dc voltage regulator using SCR circuit smps repair circuit Buck-Boost Converter advantages melcher bM 1000 mk II prime 15005 ab melcher LM 1000 mk II Melcher dc-dc converter bm 1000 melcher, uster, switzerland MELCHER SWITCHING MODE REGULATOR SMRF
Text: Melcher Product Classes Defined for Different Environments Rugged Environment Class Performance Ideal for mobile applications, or where equipment is subjected to high levels of EMI, bump, shock and vibration, or where extremes of temperature are seen. The products are suitable for transportation, quasi-military,
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I-20159
ac-dc voltage regulator using SCR
ac-dc voltage regulator using SCR circuit
smps repair circuit
Buck-Boost Converter advantages
melcher bM 1000 mk II
prime 15005 ab
melcher LM 1000 mk II
Melcher dc-dc converter bm 1000
melcher, uster, switzerland
MELCHER SWITCHING MODE REGULATOR SMRF
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Untitled
Abstract: No abstract text available
Text: Sample & Buy Product Folder Support & Community Tools & Software Technical Documents UC1845A-SP SLUSC14 – MAY 2015 UC1845A-SP QML Class V, Radiation Hardened Current-Mode PWM Controller 1 Features 2 Applications • • • • • • • QML Class V QMLV Qualified, SMD 5962-86704
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UC1845A-SP
SLUSC14
UC1845A-SP
5962P8670411Vxx:
MIL-STD-883
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Untitled
Abstract: No abstract text available
Text: TM TMP431 TMP432 P432 www.ti.com SBOS441F – SEPTEMBER 2009 – REVISED AUGUST 2013 ±1°C Temperature Sensor with Series-R, η-Factor, and Automatic Beta Compensation Check for Samples: TMP431, TMP432 FEATURES DESCRIPTION • • • • • • • The TMP431 and TMP432 are remote temperature
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TMP431
TMP432
SBOS441F
TMP431,
TMP431
TMP432
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