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    TRANSISTORS K 903 Search Results

    TRANSISTORS K 903 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTORS K 903 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Transistors K 903

    Abstract: PDTA144ES PDTA114ES PDTA124ES PDTC114ES PDTC124ES "Small-signal Transistors Selection" PDTA114TS PDTA143ES PDTC114TS
    Text: Philips Semiconductors Small-signal Transistors Selection guide LEADED DEVICES continued NPN RESISTOR-EQUIPPED TRANSISTORS TYPE NUMBER PACKAGE VCEO max. (V) IO max. (mA) Ptot max. (mW) hFE min. hFE max. INPUT RES. (KΩ) RES. RATIO PNP COMPL. PAGE >30 10


    Original     		PDF PDTA114ES PDTC114ES PDTC114TS PDTA114TS PDTC124ES PDTA124ES PDTC143ES PDTA143ES PDTC144ES PDTA144ES Transistors K 903 PDTA144ES PDTA114ES PDTA124ES PDTC114ES PDTC124ES "Small-signal Transistors Selection" PDTA114TS PDTA143ES PDTC114TS

    IRFF9110

    Abstract: No abstract text available
    Text: PD - 90388 REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF IRFF9110 100V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) IRFF9110 -100V 1.2Ω ID -2.5A  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF O-205AF) IRFF9110 -100V switchin252-7105 IRFF9110

    Untitled

    Abstract: No abstract text available
    Text: PD - 90388 REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF IRFF9110 100V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) IRFF9110 -100V 1.2Ω ID -2.5A  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF O-205AF) IRFF9110 -100V

    IRFF9210

    Abstract: 097A
    Text: PD - 90382 REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF IRFF9210 200V, P-CHANNEL Product Summary Part Number IRFF9210 BVDSS -200V RDS(on) 3.0Ω ID -1.5A  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF O-205AF) IRFF9210 -200V as252-7105 IRFF9210 097A

    Untitled

    Abstract: No abstract text available
    Text: PD - 90336F IRF430 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6762  HEXFET TRANSISTORS JANTXV2N6762 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/542] 500V, N-CHANNEL Product Summary Part Number IRF430 BVDSS 500V RDS(on) 1.5 Ω ID 4.5A The HEXFETtechnology is the key to International


    Original     		PDF 90336F IRF430 JANTX2N6762 JANTXV2N6762 O-204AA/AE) MIL-PRF-19500/542] p252-7105

    IRF4401

    Abstract: IRF440
    Text: PD - 90372 IRF440 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF440 BVDSS 500V RDS(on) 0.85Ω ID 8.0A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF IRF440 O-204AA/AE) parame252-7105 IRF4401 IRF440

    IRF430

    Abstract: JANTX2N6762 JANTXV2N6762
    Text: PD - 90336F IRF430 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6762  HEXFET TRANSISTORS JANTXV2N6762 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/542] 500V, N-CHANNEL Product Summary Part Number IRF430 BVDSS 500V RDS(on) 1.5 Ω ID 4.5A The HEXFETtechnology is the key to International


    Original     		PDF 90336F IRF430 JANTX2N6762 JANTXV2N6762 O-204AA/AE) MIL-PRF-19500/542] an52-7105 IRF430 JANTX2N6762 JANTXV2N6762

    IRF130

    Abstract: JANTX2N6756 JANTXV2N6756
    Text: PD - 90333F IRF130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6756  HEXFET TRANSISTORS JANTXV2N6756 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/542] 100V, N-CHANNEL Product Summary Part Number IRF130 BVDSS 100V RDS(on) 0.18Ω ID 14A The HEXFETtechnology is the key to International


    Original     		PDF 90333F IRF130 JANTX2N6756 JANTXV2N6756 O-204AA/AE) MIL-PRF-19500/542] and252-7105 IRF130 JANTX2N6756 JANTXV2N6756

    IRF330

    Abstract: JANTX2N6760 JANTXV2N6760
    Text: PD - 90335F IRF330 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6760  HEXFET TRANSISTORS JANTXV2N6760 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/542] 400V, N-CHANNEL Product Summary Part Number IRF330 BVDSS 400V RDS(on) 1.00Ω ID 5.5A The HEXFETtechnology is the key to International


    Original     		PDF 90335F IRF330 JANTX2N6760 JANTXV2N6760 O-204AA/AE) MIL-PRF-19500/542] an52-7105 IRF330 JANTX2N6760 JANTXV2N6760

    Untitled

    Abstract: No abstract text available
    Text: PD - 90339F IRF350 JANTX2N6768 JANTXV2N6768 [REF:MIL-PRF-19500/543] 400V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF350 BVDSS 400V RDS(on) 0.300Ω ID 14A The HEXFETtechnology is the key to International


    Original     		PDF 90339F IRF350 JANTX2N6768 JANTXV2N6768 MIL-PRF-19500/543] O-204AA/AE)

    Untitled

    Abstract: No abstract text available
    Text: PD - 90330F IRF450 JANTX2N6770 JANTXV2N6770 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF450 BVDSS 500V RDS(on) 0.400Ω ID 12A The HEXFETtechnology is the key to International


    Original     		PDF 90330F IRF450 JANTX2N6770 JANTXV2N6770 O-204AA/AE) temper252-7105

    Untitled

    Abstract: No abstract text available
    Text: PD - 90338E IRF250 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6766  HEXFET TRANSISTORS JANTXV2N6766 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/543] 200V, N-CHANNEL Product Summary Part Number IRF250 BVDSS 200V RDS(on) 0.085Ω ID 30A The HEXFETtechnology is the key to International


    Original     		PDF 90338E IRF250 JANTX2N6766 JANTXV2N6766 O-204AA/AE) MIL-PRF-19500/543] p252-7105

    JANTX2N6770

    Abstract: irf4501 mosfet IRF450 IRF450 JANTXV2N6770
    Text: PD - 90330F IRF450 JANTX2N6770 JANTXV2N6770 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF450 BVDSS 500V RDS(on) 0.400Ω ID 12A The HEXFETtechnology is the key to International


    Original     		PDF 90330F IRF450 JANTX2N6770 JANTXV2N6770 O-204AA/AE) stabil52-7105 JANTX2N6770 irf4501 mosfet IRF450 IRF450 JANTXV2N6770

    Untitled

    Abstract: No abstract text available
    Text: PD - 90335F IRF330 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6760  HEXFET TRANSISTORS JANTXV2N6760 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/542] 400V, N-CHANNEL Product Summary Part Number IRF330 BVDSS 400V RDS(on) 1.00Ω ID 5.5A The HEXFETtechnology is the key to International


    Original     		PDF 90335F IRF330 JANTX2N6760 JANTXV2N6760 O-204AA/AE) MIL-PRF-19500/542] p252-7105

    IRF140

    Abstract: irf140 ir IRF1401
    Text: PD - 90369 IRF140 100V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF140 BVDSS 100V RDS(on) 0.077Ω ID 28A The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF IRF140 O-204AA/AE) param252-7105 IRF140 irf140 ir IRF1401

    2SK2136

    Abstract: No abstract text available
    Text: MOS FIELD EFFECT POWER TRANSISTORS 2 S K 2 1 3 6 , 2 S K 2 1 3 6 - Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2136, 2SK2136-Z are N -channel Power MOS Field Effect Transistors designed fo r h ig h vo lta g e sw itch in g applications.


    OCR Scan     		PDF 2SK2136, 2SK2136-Z 2SK2136-Z IEI-1209) 2136-Z 2SK2136

    3866S

    Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
    Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM


    OCR Scan     		PDF

    catalogue des transistors bipolaires de puissance

    Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
    Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM


    OCR Scan     		PDF

    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


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    TIP27

    Abstract: 190n0 2N1384 2N866 2N907 transistor BD400 BD109 BD109-16 1743-0810 1843-3705
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H II MIN. MAX PcT6TT ABSOiLOTE MAX. RATIINGS Ä25C MAX. 1 hFE ! MIN NlAXl tae


    OCR Scan     		PDF

    bu 1350

    Abstract: BU 508 transistor power flyback bu508
    Text: JJ-E M G CORP Û1 m DE|D[ gTMEb 7 | J - J 2 - Ó / Horizontal Deflection Transistors T E LEFU N K E N electronic provides horizontal deflection transistors in both the high voltage T O 3 large eyelet) hermetic package and in the high voltage epoxy package. Our basic


    OCR Scan     		PDF

    to-220 weight

    Abstract: "high voltage linear regulator" bu508a bu508 BU908 s630t DIN 41872 JEDEC TO-220
    Text: TELEFUNKEN ELECTRONIC_61C D • 6 3 5 0 0 ^ 0005bMM 3 M A L 6 G J - £ 2 - O J Horizontal Deflection Transistors T EL E F U N K E N electronic provides horizontal deflection transistors in both the high voltage T O 3 large eyelet hermetic package and in the high voltage epoxy package. Our basic


    OCR Scan     		PDF 0005bMM to-220 weight "high voltage linear regulator" bu508a bu508 BU908 s630t DIN 41872 JEDEC TO-220

    2SD2436

    Abstract: 2SC4969 2SB1584 2sd2433 2sb1582 2sb1583 2sd2434 2SC4971 2sc4973 2sd2432
    Text: T Mini 3-pin Package IW f é Outline Transistors, Diodes s T S - a a O S m / 'C y 'f r - S / 't t . ? & |M > 3 il}:F 5 - S !i:ifc '< . a e.cc u — K a u t i J i t f i i t t i t £ / * • : / * r - y - e t c n - j f y - y 0) f f * Art) .7mmt » < , * » 0 5 f 5 lW b l= lllttt' t l i t o


    OCR Scan     		PDF machine71 2SC4972 2SC4974 2SC4975 2SC4973 MA152A MA1U152A MA1U152K MA152K MA1U152WA 2SD2436 2SC4969 2SB1584 2sd2433 2sb1582 2sb1583 2sd2434 2SC4971 2sc4973 2sd2432

    K 2645 transistor

    Abstract: K 2642 transistor transistor d 2645 TRANSISTOR K 2645 transistor TRANSISTOR BC 415 transistor BU 102 TRANSISTOR P 01 K 2645 transistor BF 606 BF 145 transistor TRANSISTOR K 2645
    Text: L I - -• TELEFUNKEN ELECTRONIC 17E D ■ fiSSOQ^b 0001503 5 ■ AL6G BU 903 milFiyiMKlM electronic CrttMtTtchnoiog* r - 33-13 Silicon NPN Power Transistor Application: Switching mode power supply features: • Short switching time • Power dissipation 125 W


    OCR Scan     		PDF 0QEH503 IAL66 T-33-13 DIN41 T0126 15A3DIN K 2645 transistor K 2642 transistor transistor d 2645 TRANSISTOR K 2645 transistor TRANSISTOR BC 415 transistor BU 102 TRANSISTOR P 01 K 2645 transistor BF 606 BF 145 transistor TRANSISTOR K 2645