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    TRANSISTORS H128 Search Results

    TRANSISTORS H128 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTORS H128 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistors H128

    Abstract: H136 rg29B H-136
    Text: Data Sheet No. PD-9.653A INTERNATIONAL RECTIFIER JO R AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS ;n N-CHANNEL IRHF7130 IRHF8130 2N7261 JANSRSN7S61 JANSHSN7S61 MEGA RAD HARD 100 Volt, 0.18Q, MEGA RAD HARD HEXFET Product Summary International Rectifier's MEGA RAD HARD Technology HEXFETs


    OCR Scan     		IRHF7130 IRHF8130 2N7261 JANSRSN7S61 JANSHSN7S61 1x105 H-137 IRHF7130, IRHF8130, transistors H128 H136 rg29B H-136 PDF

    transistors H128

    Abstract: No abstract text available
    Text: Data Sheet No. PD-9.653A INTERNATIONAL RECTIFIER l l O R I AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS ;n N-CHANNEL IRHF7130 IRHFS13Q SN7S61 JANSRSN7S61 JANSH2N7S61 MEGA RAD HARD 100 Volt, 0.181], MEGA RAD HARD HEXFET Product Summary International Rectifier’s MEGA RAD HARD Technology HEXFETs


    OCR Scan     		IRHF7130 IRHFS13Q SN7S61 JANSRSN7S61 JANSH2N7S61 1x105 1x10s H-137 IRHF7130, IRHF8130, transistors H128 PDF

    transistors H128

    Abstract: 2N7261 IRHF7130 IRHF8130 JANSR2N7261 HG-18
    Text: Data Sheet No. PD-9.653A INTERNATIONAL RECTIFIER l l O R l AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRHF7130 IRH FBI 3 0 ;n N-CHANNEL 2 IM-7261 JANSR2N7261 JANSHSN7S61 MEGA RAD HARD 100 Volt, 0.18 2, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD Technology HEXFETs


    OCR Scan     		IRHF7130 IRHF8130 2N7261 JANSR2N7261 JANSHSN7S61 irhf8130 IRHF7130, IRHF8130, transistors H128 HG-18 PDF

    Untitled

    Abstract: No abstract text available
    Text: Characterization of atomic layer deposition HfO2, Al2O3, and plasmaenhanced chemical vapor deposition Si3N4 as metal–insulator–metal capacitor dielectric for GaAs HBT technology Jiro Yota,a Hong Shen, and Ravi Ramanathan Skyworks Solutions, Inc., 2427 W. Hillcrest Drive, Newbury Park, California 91320


    Original     		PDF

    ALD HfO2 and Al2O3 as MIM Capacitor Dielectric for GaAs HBT Technology

    Abstract: No abstract text available
    Text: ALD HfO2 and Al2O3 as MIM Capacitor Dielectric for GaAs HBT Technology Jiro Yota GaAs Technology, Skyworks Solutions, Inc. 2427 W. Hillcrest Drive, Newbury Park, CA 91320, USA jiro.yota@skyworksinc.com Hafnium dioxide HfO2 and aluminum oxide (Al2O3) films have


    Original     		01AC09 ALD HfO2 and Al2O3 as MIM Capacitor Dielectric for GaAs HBT Technology PDF

    integrated circuit BOSCH

    Abstract: bosch pm6
    Text: Stellaris LM4F232 Evaluation Board User ’s Manual EK-LM4F2 32-UM-02 Copyrig ht 201 2 Te xas In strumen ts Copyright Copyright © 2011 Texas Instruments, Inc. All rights reserved. Stellaris and StellarisWare are registered trademarks of Texas Instruments. ARM and


    Original     		LM4F232 32-UM-02 integrated circuit BOSCH bosch pm6 PDF

    Untitled

    Abstract: No abstract text available
    Text: Tiva TM4C123G Development Board User's Guide Literature Number: SPMU357B August 2013 – Revised March 2014 Contents 1 DK-TM4C123G Overview 1.1 1.2 1.3 1.4 2 Hardware Description 2.1 2.2 2.3 2.4 2.5 3 . 4


    Original     		TM4C123G SPMU357B DK-TM4C123G DK-TM4C123G PDF

    h128 transistor

    Abstract: transistors H128 NH FUSE LINDER BSC 25-05 quivalent book
    Text: RadHard Field Programmable Gate Arrays F e a ftw s re s Guaranteed Total Dose Radiation Capability Low Single Event Upset Susceptibility High D oseR ateS urvivability Latch-Up Im m unity Guaranteed QML Qualified Devices Commercial Devices A vailablefor Prototyping and


    OCR Scan     		20-Pin h128 transistor transistors H128 NH FUSE LINDER BSC 25-05 quivalent book PDF