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    TRANSISTORS BR 9015 Search Results

    TRANSISTORS BR 9015 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTORS BR 9015 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 10mhz 60w

    Abstract: 2SA1535 2SA1535A
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SA1535/A DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -150V(Min) -2SA1535 = -180V(Min) -2SA1535A ·Good Linearity of hFE ·Complement to Type 2SC3944/A APPLICATIONS


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    PDF 2SA1535/A -150V -2SA1535 -180V -2SA1535A 2SC3944/A 2SA1535 2SA1535A transistor 10mhz 60w 2SA1535 2SA1535A

    2SA1535A

    Abstract: 2SA1535
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SA1535/A DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -150V(Min) -2SA1535 = -180V(Min) -2SA1535A ·Good Linearity of hFE ·Complement to Type 2SC3944/A APPLICATIONS


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    PDF 2SA1535/A -150V -2SA1535 -180V -2SA1535A 2SC3944/A 2SA1535 2SA1535A 2SA1535A 2SA1535

    BR 9014

    Abstract: BR 9014 transistor BR 9015 BR 9014 c transistors BR 9015 transistor 9014 NPN 9015 PNP transistor 9015 c transistor c 9015 TS 9015
    Text: ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. On special request, these transistors can be


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    PDF 100mA, BR 9014 BR 9014 transistor BR 9015 BR 9014 c transistors BR 9015 transistor 9014 NPN 9015 PNP transistor 9015 c transistor c 9015 TS 9015

    br 9015

    Abstract: pnp transistor 9015 transistor 9015 c 9015 pnp BR 9014 transistor c 9015 9015 transistor C 9015 transistor transistor 9015 BR 9015 C
    Text: ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. On special request, these transistors can be


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    PDF 100mA, br 9015 pnp transistor 9015 transistor 9015 c 9015 pnp BR 9014 transistor c 9015 9015 transistor C 9015 transistor transistor 9015 BR 9015 C

    BR 9015

    Abstract: transistor 9015 c transistor c 9015 BR 9015 C pnp transistor 9015 transistors BR 9015 9015 pnp transistor 9015 9015* Transistor C 9015 transistor
    Text: ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. On special request, these transistors can be


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    PDF 100mA, BR 9015 transistor 9015 c transistor c 9015 BR 9015 C pnp transistor 9015 transistors BR 9015 9015 pnp transistor 9015 9015* Transistor C 9015 transistor

    transistor c 9015

    Abstract: BR 9014 BR 9015 BR 9014 transistor transistor 9015 c 9015 PNP pnp transistor 9015 BR 9014 C TRANSISTOR transistors BR 9015 9015 TO-92
    Text: ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. On special request, these transistors can be


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    PDF 100mA, transistor c 9015 BR 9014 BR 9015 BR 9014 transistor transistor 9015 c 9015 PNP pnp transistor 9015 BR 9014 C TRANSISTOR transistors BR 9015 9015 TO-92

    2SC1568

    Abstract: 2SA900
    Text: Inchange Semiconductor Product Specification 2SC1568 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SA900 ·Low collector saturation voltage APPLICATIONS ·For low voltage type medium output power amplification PINNING


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    PDF 2SC1568 O-126 2SA900 500mA -50mA 200MHz 2SC1568 2SA900

    2SC1568

    Abstract: 2SA900
    Text: SavantIC Semiconductor Product Specification 2SC1568 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SA900 ·Low collector saturation voltage APPLICATIONS ·For low voltage type medium output power amplification PINNING


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    PDF 2SC1568 O-126 2SA900 500mA -50mA 200MHz 2SC1568 2SA900

    BR 9014

    Abstract: BR 9014 transistor ST 9014 C BR 9014 c C 9014 transistor BR 9014 C TRANSISTOR V. 9014 c transistor 9014 C npn 9014 TRANSISTOR c 9014
    Text: ST 9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 9015 is recommended. On special request, these transistors can be


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    PDF

    BR 9014

    Abstract: BR 9014 transistor 9014 C 9014 transistor transistor 9014 npn TRANSISTOR c 9014 ST 9014 C BR 9014 c V. 9014 c transistor 9014 C npn
    Text: ST 9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 9015 is recommended. On special request, these transistors can be


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    PDF

    BR 9014

    Abstract: BR 9014 transistor BR 9014 C ST 9014 C C 9014 transistor st 9014 TRANSISTOR c 9014 TRANSISTOR 9014 V. 9014 c 9014
    Text: ST 9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 9015 is recommended. On special request, these transistors can be


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    PDF

    BR 9014 transistor

    Abstract: BR 9014 TRANSISTOR 9014 C 9014 transistor ST 9014 C BR 9014 C 9014 TRANSISTOR c 9014 st 9014 NPN 9014
    Text: ST 9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 9015 is recommended. On special request, these transistors can be


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    PDF

    2SA900

    Abstract: 2SC1568
    Text: JMnic Product Specification 2SA900 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SC1568 ・Low collector saturation voltage APPLICATIONS ・For audio frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter


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    PDF 2SA900 O-126 2SC1568 -500mA -50mA 2SA900 2SC1568

    2SA900

    Abstract: 2SC1568
    Text: SavantIC Semiconductor Product Specification 2SA900 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SC1568 ·Low collector saturation voltage APPLICATIONS ·For audio frequency power amplifier PINNING PIN DESCRIPTION 1


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    PDF 2SA900 O-126 2SC1568 -500mA -50mA 2SA900 2SC1568

    2SC2590

    Abstract: 2SA1110
    Text: SavantIC Semiconductor Product Specification 2SC2590 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SA1110 ·Excellent current IC characteristics of forward current transfer ratio hFE vs. collector ·High transition frequency fT


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    PDF 2SC2590 O-126 2SA1110 150mA 200MHz 2SC2590 2SA1110

    2SC2590

    Abstract: 2SA1110
    Text: JMnic Product Specification 2SC2590 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SA1110 ・Excellent current IC characteristics of forward current transfer ratio hFE vs. collector ・High transition frequency fT


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    PDF 2SC2590 O-126 2SA1110 150mA 200MHz 2SC2590 2SA1110

    2SA1110

    Abstract: 2SC2590
    Text: JMnic Product Specification 2SA1110 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SC2590 ・Excellent current IC characteristics of forward current transfer ratio hFE vs. collector ・High transition frequency fT


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    PDF 2SA1110 O-126 2SC2590 -30mA -150mA -50mA 2SA1110 2SC2590

    2SA1535

    Abstract: 2SA1535A
    Text: JMnic Product Specification 2SA1535 2SA1535A Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SC3944/3944A ・Optimum for the driver-stage of a 60W to 100W output amplifier APPLICATIONS ・For low-frequency driver and high


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    PDF 2SA1535 2SA1535A O-220Fa 2SC3944/3944A 2SA1535 -150V; -150mA 2SA1535A

    2SA1110

    Abstract: 2SC2590
    Text: Inchange Semiconductor Product Specification 2SA1110 Silicon PNP Power Transistors • DESCRIPTION ·With TO-126 package ·Complement to type 2SC2590 ·Excellent current IC characteristics of forward current transfer ratio hFE vs. collector ·High transition frequency fT


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    PDF 2SA1110 O-126 2SC2590 -30mA -150mA -50mA 2SA1110 2SC2590

    2SA1110

    Abstract: 2SC2590
    Text: SavantIC Semiconductor Product Specification 2SA1110 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SC2590 ·Excellent current IC characteristics of forward current transfer ratio hFE vs. collector ·High transition frequency fT


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    PDF 2SA1110 O-126 2SC2590 -30mA -150mA -50mA 2SA1110 2SC2590

    2SA1535A

    Abstract: 2SA1535
    Text: SavantIC Semiconductor Product Specification 2SA1535 2SA1535A Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Complement to type 2SC3944/3944A ·Optimum for the driver-stage of a 60W to 100W output amplifier APPLICATIONS ·For low-frequency driver and high


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    PDF 2SA1535 2SA1535A O-220Fa 2SC3944/3944A 2SA1535 -150V; -150mA 2SA1535A

    2SA1111

    Abstract: 2SA1112 2SC2591 2SC2591/2592
    Text: JMnic Product Specification 2SA1111 2SA1112 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SC2591/2592 ・Good linearity of hFE ・High VCEO APPLICATIONS ・For audio frequency, high power amplifiers application PINNING


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    PDF 2SA1111 2SA1112 O-220 2SC2591/2592 O-220) 2SA1111 -120V; 2SA1112 2SC2591 2SC2591/2592

    2SA1112

    Abstract: 2Sa1111
    Text: Inchange Semiconductor Product Specification 2SA1111 2SA1112 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC2591/2592 ·Good linearity of hFE ·High VCEO APPLICATIONS ·For audio frequency, high power amplifiers application


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    PDF 2SA1111 2SA1112 O-220 2SC2591/2592 O-220) 2SA1111 -120V; 2SA1112

    2Sa1111

    Abstract: 2SA1112
    Text: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1111 2SA1112 DESCRIPTION •With TO-220 package ·Complement to type 2SC2591/2592 ·Good linearity of hFE ·High VCEO APPLICATIONS ·For audio frequency, high power amplifiers application


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    PDF 2SA1111 2SA1112 O-220 2SC2591/2592 O-220) 2SA1111 -120V; 2SA1112