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    TRANSISTORS BC 557C Search Results

    TRANSISTORS BC 557C Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTORS BC 557C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistors BC 557C

    Abstract: transistors BC 558c 556B transistor BC 557B ic 556 datasheet 559C transistors bc 557b ic 556 558B equivalent bc 558b
    Text: BC 556 . BC 559 PNP General Purpose Transistors Si-Epitaxial PlanarTransistors PNP Power dissipation – Verlustleistung 500 mW Plastic case Kunststoffgehäuse TO-92 10D3 Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0


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    PDF UL94V-0 transistors BC 557C transistors BC 558c 556B transistor BC 557B ic 556 datasheet 559C transistors bc 557b ic 556 558B equivalent bc 558b

    Untitled

    Abstract: No abstract text available
    Text: BC 556 . BC 559 PNP Silicon Epitaxial PlanarTransistors PNP Power dissipation – Verlustleistung 500 mW Plastic case Kunststoffgehäuse TO-92 10D3 Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert


    Original
    PDF UL94V-0 tter\Transistoren\bc556

    transistors BC 557C

    Abstract: No abstract text available
    Text: BC 556 . BC 559 PNP Silicon Epitaxial PlanarTransistors PNP Power dissipation – Verlustleistung 500 mW Plastic case Kunststoffgehäuse TO-92 10D3 Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert


    Original
    PDF UL94V-0 transistors BC 557C

    C557B

    Abstract: C558 transistor C556B c 557 b transistors BC 557C transistor BC 557B transistor C558 c558c BC 557 PNP TRANSISTOR circuits BC557C
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA A m plifier Transistors BC556,B BC557,A,B,C BC558B PNP Silicon M AXIMUM RATINGS Symbol BC556 BC557 BC558 Collector-E m itter Voltage VCEO -6 5 -4 5 -3 0 Vdc C o llecto r-B ase Voltage v CB O -6 0 -5 0 -3 0 Vdc E m itte r-B a s e Voltage


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    PDF BC556 BC557 BC558B BC556 BC557 BC558 C557B C558 transistor C556B c 557 b transistors BC 557C transistor BC 557B transistor C558 c558c BC 557 PNP TRANSISTOR circuits BC557C

    bc558c

    Abstract: transistors BC 557C philips BC557B bc557b BC557C BC558 driver BC558B PHILIPS BC556-BC558 BC556A BC557A
    Text: BC556 to 558 PHILIPS international SbE D • 7110fl2b QOMSOab 452 ■ P H I N T-Zl'Z-l SILICON PLANAR EPITAXIAL TRANSISTORS General purpose p-n-p transistors in plastic TO-92 envelopes, especially suitable for use in driver stages of audio amplifiers. QUICK REFEREN C E DATA


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    PDF BC556 711002b BC557 BC558 BC557C BC558C^ BC557AV bc558c transistors BC 557C philips BC557B bc557b BC558 driver BC558B PHILIPS BC556-BC558 BC556A BC557A

    C556

    Abstract: C558 C557B c557a Philips C558 C556B c558 PNP transistors BC 557C bc557 and application BC557
    Text: DISCRETE SEMICONDUCTORS BC556; BC557; BC558 PNP general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors 1997 Mar 27 PHILIPS Philips Semiconductors Product specification


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    PDF BC556; BC557; BC558 BC546, BC548. BC557 C556 C558 C557B c557a Philips C558 C556B c558 PNP transistors BC 557C bc557 and application

    JC556

    Abstract: JC556A JC556B JC557 JC557A JC557B JC557C JC558 JC558A
    Text: m bbSB^ai DD27TB1 bIT * A P X N AUER PHILIPS/DISCRETE JC556 to 558 b*îE P SILICON PLANAR EPITAXIAL TRANSISTORS General purpose pnp transistors in plastic TO-92 envelopes, especially suitable for use in driver stages of audio amplifiers. Q U IC K R E F E R E N C E D A T A


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    PDF DD27TB1 JC556 JC557 JC558 200Tiaa JC556A JC556B JC556B JC557A JC557B JC557C JC558 JC558A

    transistors BC 557C

    Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
    Text: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and


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