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    TRANSISTORS BC 183 Search Results

    TRANSISTORS BC 183 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTORS BC 183 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BC183

    Abstract: BC182 BC182A BC184 BC182B BC184 pin out transistors BC 183
    Text: MOTOROLA Order this document by BC182/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC182,A,B NPN Silicon BC183 BC184 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Symbol BC 182 BC 183 BC 184 Unit Collector – Emitter Voltage VCEO 50 30 30 Vdc Collector – Base Voltage


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    PDF BC182/D BC182 BC183 BC184 BC182/D* BC183 BC182A BC184 BC182B BC184 pin out transistors BC 183

    transistor BC 331

    Abstract: BC 331 Transistor PN2907 PN2907A transistor PN2907 transistors BC 183
    Text: Transys Electronics L I M I T E D PNP SILICON PLANAR EPITAXIAL TRANSISTORS PN2907 PN2907A TO-92 Plastic Package E BC Complementary Silicon Transistors for Switching and Linear Applications. ABSOLUTE MAXIMUM RATINGS Ta=25 º C unless specified otherwise DESCRIPTION


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    PDF PN2907 PN2907A transistor BC 331 BC 331 Transistor PN2907 PN2907A transistor PN2907 transistors BC 183

    transistor BC 331

    Abstract: transistor PN2907 PN2907 C 331 to-92 PN2907 plastic package PN2907A BC 331 Transistor PNP pN2907
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS PN2907 PN2907A TO-92 Plastic Package E BC Complementary Silicon Transistors for Switching and Linear Applications. ABSOLUTE MAXIMUM RATINGS Ta=25 º C unless specified otherwise


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    PDF ISO/TS16949 PN2907 PN2907A C-120 transistor BC 331 transistor PN2907 PN2907 C 331 to-92 PN2907 plastic package PN2907A BC 331 Transistor PNP pN2907

    PN2907A

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS PN2907 PN2907A TO-92 Plastic Package E BC Complementary Silicon Transistors for Switching and Linear Applications. ABSOLUTE MAXIMUM RATINGS Ta=25 º C unless specified otherwise


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    PDF PN2907 PN2907A C-120 PN2907A

    PN2907A

    Abstract: PN2907 transistor PN2907 transistor bc 331
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS PN2907 PN2907A TO-92 Plastic Package E BC Complementary Silicon Transistors for Switching and Linear Applications. ABSOLUTE MAXIMUM RATINGS Ta=25 º C unless specified otherwise


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    PDF PN2907 PN2907A C-120 PN2907A PN2907 transistor PN2907 transistor bc 331

    transistor BC 331

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PN2369 NPN SILICON HIGH SPEED SWITHCHING TRANSISTORS TO-92 Plastic Package E BC LOW POWER FOR HIGH SPEED SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise


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    PDF PN2369 C-120 PN2369 Rev110302D transistor BC 331

    PN2369

    Abstract: transistor bc 331 BC 331 Transistor 100MHZ
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PN2369 NPN SILICON HIGH SPEED SWITHCHING TRANSISTORS TO-92 Plastic Package E BC LOW POWER FOR HIGH SPEED SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise


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    PDF PN2369 C-120 PN2369 Rev110302D transistor bc 331 BC 331 Transistor 100MHZ

    transistor bc 331

    Abstract: PN2369 BC 331 Transistor 100MHZ
    Text: Continental Device India Limited IS/ISO 9002 Lic# QSC/L-000019.3 An IS/ISO 9002 and IECQ Certified Manufacturer PN2369 NPN SILICON HIGH SPEED SWITHCHING TRANSISTORS TO-92 Plastic Package E BC LOW POWER FOR HIGH SPEED SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise


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    PDF QSC/L-000019 PN2369 C-120 PN2369 Rev110302D transistor bc 331 BC 331 Transistor 100MHZ

    S4 78a DIODE schottky

    Abstract: diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92
    Text: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


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    PDF 25-RF-BIPOLAR-Transistors. 45-RF-BIPOLAR-Transistors. OT-23 OT-143 S4 78a DIODE schottky diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92

    2907A PNP bipolar transistors

    Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846
    Text: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3


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    PDF O-92d 2907A PNP bipolar transistors BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846

    transistors BC 543

    Abstract: 183W Diode BAW 62 BCR191P SOT23 BCV 27 TRANSISTOR BC 530 sot-23 p1 diode S6 78A mmic amplifier sot-89 p4 diode sot 143 s5
    Text: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


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    PDF OT-23 OT-363 OT-143 transistors BC 543 183W Diode BAW 62 BCR191P SOT23 BCV 27 TRANSISTOR BC 530 sot-23 p1 diode S6 78A mmic amplifier sot-89 p4 diode sot 143 s5

    2907A PNP bipolar transistors

    Abstract: diode S6 78A MMIC SOT 363 s1140 DIODE TA 70/04 2907A PNP bipolar transistors datasheet Diode BAW 62 TRANSISTOR BC 158 baw 92 68W SOT
    Text: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


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    PDF OT-23 OT-143 2907A PNP bipolar transistors diode S6 78A MMIC SOT 363 s1140 DIODE TA 70/04 2907A PNP bipolar transistors datasheet Diode BAW 62 TRANSISTOR BC 158 baw 92 68W SOT

    transistors BC 183

    Abstract: TR BC 238 BC Transistors h21E BC 182 TR BC 237 B bc 237 BC174 BC213A BC307A
    Text: general purpose transistors — plastic case transistors usage général — boîtier plastique THOMSON-CSF NPN Characteristics at 25°C Maxim um ratings Type PNP Ptot min BC 174 BC 174 A BC 174 B mW (V) 300 64 / lc h21E VcEO h21 e * max (mA) 125* 110 200


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    PDF CB-76 transistors BC 183 TR BC 238 BC Transistors h21E BC 182 TR BC 237 B bc 237 BC174 BC213A BC307A

    F21E

    Abstract: transistors BC 848 ic 846 l transistors BC 183 Bc 188 pnp
    Text: SIEMENS NPN Silicon AF Transistors BC 846 . BC 850 Features • • • • • For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 856, BC 857,


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    PDF Q62702-C1772 Q62702-C1746 Q62702-C1884 Q62702-C1687 Q62702-C1715 Q62702-C1741 Q62702-C1704 Q62702-C1506 Q62702-C1727 Q62702-C1713 F21E transistors BC 848 ic 846 l transistors BC 183 Bc 188 pnp

    BC183A

    Abstract: BC 238 BP BC174 bc 307 bp TR BC 238 C 337-40 BC318 bc 337-16 transistors BC 183 BC 237 B
    Text: general purpose transistors — plastic case tra n s is to rs usage général — b oîtier plastique THOMSON-CSF NPN Characteristics at 25°C Maximum ratings Type PNP Ptot / lc h21E VcEO C22b VCE sat / <C/»B FB Case 1KHz * min BC 174 BC 174 A BC 174 B


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    PDF CB-76 BC317P. BC183A BC 238 BP BC174 bc 307 bp TR BC 238 C 337-40 BC318 bc 337-16 transistors BC 183 BC 237 B

    l22e

    Abstract: BC213 BC212 BC213B BC212a BC212 Siemens bc 212 bc212b 213 T A212B
    Text: SIE D • SIEM ENS flE35b05 0D4153E Obfl M S I E 6 SI EM EN S A K T I E N G E S E L L S C H A F " P 2 ñ 'Z - l PNP Silicon AF Transistors BC212 BC 213 • High current gain • Low collector-emitter saturation voltage • Complementary types: BC 182, BC 183 NPN


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    PDF flE35b05 0D4153E BC212 Q62702-C242 Q62702-C374-V1 Q62702-C374-V2 Q62702-C564 Q62702-C1159 Q62702-C1160 Q62702-C1158 l22e BC213 BC213B BC212a BC212 Siemens bc 212 bc212b 213 T A212B

    bc183b

    Abstract: BC183B MOTOROLA 2904S cbc182 BC184C transistors BC 183 BC182 bc184b BC183 2 bc184
    Text: MOTORCLA SC ISE D I t.3t.755M QaflSfl31 2 | XSTRS/R F - r r W 7 BC182, A, B BC183, A, B, C BC184, B, C M A X IM U M RATINGS Sym bol R a t in g BC BC BC 182 183 184 U n it C o lle c to r-E m itte r V o lta g e VcEO 50 30 30


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    PDF QaflSfl31 BC182 BC183 bc183b BC183B MOTOROLA 2904S cbc182 BC184C transistors BC 183 bc184b BC183 2 bc184

    BC182

    Abstract: BC183 BC184 bc183 motorola BC182A BC182B BC237 bc 182 BC183 3
    Text: BC182,A,B BC183 BC184 M A X IM U M RA TIN G S S ym b o l R a tin g BC BC BC 182 183 184 U n it C ollector-E m itter Voltage VCEO 50 30 30 Vdc Collector-Base Voltage VCBO 60 45 45 Vdc Em itter-Base Voltage Vebo 6.0 Vdc C ollector Current - Continuous ic 100


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    PDF BC183 BC184 O-226AA) BC182 BC183 BC184 BC182A BC182 bc183 motorola BC182A BC182B BC237 bc 182 BC183 3

    1.0 k mef 250

    Abstract: ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072
    Text: INTRODUCTION This is Micro Electronics latest short form catalogue on discrete semi-conductor devices. We have introduced many new products since the previous publication. This guide provides a quick reference on the characteristics o f our products. Separate data sheets for a


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    PDF semi-820 BYX22-400 BYX22-600 BYX22-800 BYX26-60 YX26-150 BYX36-1 BYX36-300 1.0 k mef 250 ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072

    TRANSISTOR BC 213

    Abstract: TRANSISTOR BC 181 bf 239 BF 212 transistor transistor bf 184 BF 184 NPN transistor TRANSISTOR BC 212 TRANSISTOR BC 174 transistor BC 338 BF 184 transistor
    Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique tho m so n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .


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    PDF BCW94 CB-76 TRANSISTOR BC 213 TRANSISTOR BC 181 bf 239 BF 212 transistor transistor bf 184 BF 184 NPN transistor TRANSISTOR BC 212 TRANSISTOR BC 174 transistor BC 338 BF 184 transistor

    TRANSISTOR BC 208

    Abstract: TRANSISTOR BC 158 TRANSISTOR BC 157 transistor BC-148 bc 106 transistor transistor BC 209 FOR TRANSISTOR BC 149 B BC 114 transistor transistor bc 209 b TRANSISTOR BC 187
    Text: BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC 183L 184 184L 186 187 179 181 182 182L 183 172 173 174 177 178 167 168 169 170 171 135 154 157 158 159 114 132 147 148 149 107 108 109 110 113 •c m Z Z Z “0 -0 "0 "0 2


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    PDF lbDT17flfl DDDDh43 O-106 O-92F to-02 melf-002. melf-006 to-237 TRANSISTOR BC 208 TRANSISTOR BC 158 TRANSISTOR BC 157 transistor BC-148 bc 106 transistor transistor BC 209 FOR TRANSISTOR BC 149 B BC 114 transistor transistor bc 209 b TRANSISTOR BC 187

    diode S6 78A

    Abstract: TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor
    Text: SIEM EN S Selection Guide RF-Transistors and MMICs MOS Field-Effect Dual-Gate GaAs FETs. 14


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    PDF O-92tl O-92d diode S6 78A TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor

    bc184 ra

    Abstract: cbc182 BC182 BC182A BC182B BC183 BC184 BC184 pin out
    Text: MOTOROLA Order this document by BC182/D SEMICONDUCTOR TECHNICAL DATA A m p lifie r T r a n s is t o r s B C 1 8 2 ,A ,B B C 183 B C 184 NPN Silicon COLLECTOR 1 MAXIMUM RATINGS Rating C o lle c to r-E m itte r Voltage Symbol BC 182 BC 183 BC 184 Unit VCEO 50


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    PDF BC182/D BC182 BC183 BC184 O-226AA) bc184 ra cbc182 BC182A BC182B BC184 pin out

    3866S

    Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
    Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM


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