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    TRANSISTORS A44 Search Results

    TRANSISTORS A44 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTORS A44 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Transistors DIP Type NPN Transistors A44 Features 1. OUT High voltage 1 Emitter 2. GND 2 Base 3. IN 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 400 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage


    Original     		PDF 100uA, 100mA 30MHZ

    NE24483

    Abstract: AF367 NE38883 BFT93R NE13783, ATF-10135 BFT92R BF936 CFX21 to119
    Text: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Po Manufacturer Max W V(BR)CBO (V) fose Max (Hz) Gp Po N.F. (dB) (W) (dB) at fTeat (Hz) Ie Max (A) TOpe, Mati. Max (OC) Package Style UHF/Microwav Transistors, Bipolar NPN (Co nt' d) S01543 ThmsnCSFEFC


    Original     		PDF S01543 AF367 AF280S 2N2999 2N2415 2N2416 2SA1245 BFQ24 NE59333 BFQ52 NE24483 NE38883 BFT93R NE13783, ATF-10135 BFT92R BF936 CFX21 to119

    TRANSISTOR A44

    Abstract: BR A44
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A44 TRANSISTOR NPN TO-92 FEATURES y High voltage MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter 1. EMITTER Value Units VCBO Collector-Base Voltage


    Original     		PDF 100mA 30MHz TRANSISTOR A44 BR A44

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 A44 TRANSISTOR NPN 1.EMITTER FEATURES z High Breakdown Voltage 2.BASE 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value


    Original     		PDF 100mA 30MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A44 TRANSISTOR NPN TO-92 FEATURES High voltage 1. EMITTER 2. BASE MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter 3. COLLECTOR Value Units 1 2 3 VCBO


    Original     		PDF 30MHz

    IC 555

    Abstract: datasheet of ic 555 A44 transistor datasheet ic 555 IC 571 TRANSISTOR A44 IC 555 DATASHEETS A44 npn transistors a44
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A44 TRANSISTOR（ NPN ） TO—92 FEATURES 1.EMITTER Power dissipation PCM : 0.625 W 2.BASE （Tamb=25℃） Collector current 3. COLLECTOR ICM : 0.2 A Collector-base voltage


    Original     		PDF O--92 30MHz 270TYP 050TYP IC 555 datasheet of ic 555 A44 transistor datasheet ic 555 IC 571 TRANSISTOR A44 IC 555 DATASHEETS A44 npn transistors a44

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A44 TRANSISTOR NPN TO-92 FEATURES 1. EMITTER Power dissipation PCM: 0.625 2. BASE W (Tamb=25℃) Collector current ICM: 3. COLLECTOR 0.2 A 1 2 3 Collector-base voltage


    Original     		PDF 30MHz

    Untitled

    Abstract: No abstract text available
    Text: TO-92 Plastic-Encapsulate Transistors A44 TRANSISTOR NPN TO-92 FEATURES High voltage 1. EMITTER 2. BASE MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter 3. COLLECTOR Value Units 1 2 3 VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage


    Original     		PDF 30MHz

    A44 npn

    Abstract: No abstract text available
    Text: A44 NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features High voltage MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO 5 V IC


    Original     		PDF 100mA 30MHz A44 npn

    BR A44

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L A44 TRANSISTOR NPN 1. BASE FEATURES z Low Collector-Emitter Saturation Voltage z High Breakdown Voltage 2. COLLECTOR 3. EMITTER MARKING: A44 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-89-3L OT-89-3L 100mA BR A44

    BR A44

    Abstract: No abstract text available
    Text: A44 TO-92 Plastic-Encapsulate Transistors Transistor NPN FEATURES Power dissipation o P CM :0.625 W (Tamb=25 C) Collector current I CM :0.2 A Collector-base voltage V (BR)CBO :400 V Operating and storage junction temperature range o o T J ,T stg :-55 C to +150 C


    Original     		PDF 100uS BR A44

    Untitled

    Abstract: No abstract text available
    Text: WTMA44 NPN Epitaxial Planar Transistors SOT-89 P b Lead Pb -Free 1 *Low Collector-Emitter Saturation Voltage *High Breakdown Voltage 2 1. BASE 2. COLLECTOR 3. EMITTER 3 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Rating Symbol Limits Unit Collector-Base Voltage VCBO


    Original     		PDF WTMA44 OT-89 WTMA44 01-Jun-2012 OT-89 500TYP

    Untitled

    Abstract: No abstract text available
    Text: WTMA44 NPN Epitaxial Planar Transistors SOT-89 P b Lead Pb -Free 1 *Low Collector-Emitter Saturation Voltage *High Breakdown Voltage 2 1. BASE 2. COLLECTOR 3. EMITTER 3 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Rating Symbol Limits Unit Collector-Base Voltage VCBO


    Original     		PDF WTMA44 OT-89 17-Jun-2013 OT-89 500TYP

    MMS8050-L

    Abstract: 2SB1073R Bd882 2SD667C 2SD667AC 2SD669AC sot23-3 marking 63 zt5551 2SD468C marking 2sd1664
    Text: TM Micro Commercial Components SMALL SIGNAL&POWER TRANSISTORS MCC Part Number VCEO V IC (A) hFE @ VCE & IC VCE(sat) & VBE(sat) @ IC & IB hFE hFE VCE IC Min. Max. (V) (mA) VCE(sat) VBE(sat) Max.(V) Max.(V) fT @ VCE & IC Polarity IC IB fT Min. TPY. fT Max.


    Original     		PDF MJD31C MJD32C MJD42C MMJD2955 MMJD3055 MMS8050-L 2SB1073R Bd882 2SD667C 2SD667AC 2SD669AC sot23-3 marking 63 zt5551 2SD468C marking 2sd1664

    a42e

    Abstract: IC 7410 sot-89 A63 CZT900K npn 2907A 2222a A77 SOT23 2222ae A92E 3906 npn
    Text: Small Signal Transistors Surface Mount Packages Actual Size SOD-923 SOT-923 SOT-953 SOD-523 SOT-523 SOT-563 SOD-323 SOT-323 SOT-363 SOD-123 SOD-123F SOT-23 SOT-23F SOT-143 SOT-26 SOT-28 SOT-89 SOT-223 SOT-228 SMA SMB SMC SOIC-16 HD DIP TLP Tiny Leadless


    Original     		PDF OD-923 OT-923 OT-953 OD-523 OT-523 OT-563 OD-323 OT-323 OT-363 OD-123 a42e IC 7410 sot-89 A63 CZT900K npn 2907A 2222a A77 SOT23 2222ae A92E 3906 npn

    44H11

    Abstract: A 3150 ic 45h11 3055 sot-223 sod923 2955 sot223 IC A 3150 SOT 363 darlington CXT7090L 7120
    Text: Bipolar Power Transistors Surface Mount Packages Actual Size SOD-923 SOT-923 SOT-953 SOD-523 SOT-523 SOT-563 SOD-323 SOT-323 SOT-363 SOD-123 SOD-123F SOT-23 SOT-23F SOT-143 SOT-26 SOT-28 SOT-89 SOT-223 SOT-228 SMA SMB SMC SOIC-16 HD DIP TLP Tiny Leadless


    Original     		PDF OD-923 OT-923 OT-953 OD-523 OT-523 OT-563 OD-323 OT-323 OT-363 OD-123 44H11 A 3150 ic 45h11 3055 sot-223 sod923 2955 sot223 IC A 3150 SOT 363 darlington CXT7090L 7120

    BDT61

    Abstract: dg43550 BDT60 BDT61B QGM3221 diagram DARLINGTON
    Text: BDT61;61A BDT61B;61C PHILIPS INTERN A T I O N A L SbE D I 711002b 00M3250 A44 W p H l N SILICON DARLINGTON POWER TRANSISTORS N-P-N silicon power transistors in m onolithic Darlington circuit for audio o utpu t stages and general purpose am plifier applications.


    OCR Scan     		PDF BDT61 BDT61B 711002b DG43550 BDT60, 711005b 7Z82099 dg43550 BDT60 QGM3221 diagram DARLINGTON

    SIEMENS 1200

    Abstract: siemens dioden bup203 C67078-A4400-A2
    Text: SIEMENS IGBTLeistungstransistoren Bestellnummer Ordering code h LU Typ Type IGBT Power transistors A Gehäuse Package Bild Figure BUP 202 1000 12.0 C67078-A4401-A2 TO-220 AB 8b BUP 203 1000 21.0 C67078-A4402-A2 TO-220 AB 8b BUP 302 1000 12.0 C67078-A4205-A2


    OCR Scan     		PDF C67078-A4401-A2 C67078-A4402-A2 C67078-A4205-A2 C67078-A4202-A2 C67078-A4200-A2 O-220 O-218 SIEMENS 1200 siemens dioden bup203 C67078-A4400-A2

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    3TE445

    Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
    Text: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group


    OCR Scan     		PDF FJJ141/A 2305D FJJ181/A 2305E/848 FJJ191/A FJL101/A CD2306D FJY101/A 2306E/832 CD2307/944 3TE445 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159

    "NPN Transistors" 2n3567

    Abstract: NSE459 NSDU05 NSD458 2N6718 TO-237 2N3569 2N6593 2N5336 2N3567 MPSW06
    Text: NPN Transistors NATL S e m iS o n d u c t o r VCER* v CEO V Min M e d iu m P o w e r 'c e s ' hFE •cBOg, VCB @ *C & VCE (nA) (V) Min Max (mA) (V) Max VCbo (V) Min 2N699 TO-39 120 60 5 2 60 40 2N1613 also Avail. JAN/TX/V Versions TO-5 75 35 7 10 60 20 40


    OCR Scan     		PDF 2N699 2N1613 2N1711 2N1890 to-202 tn3742 to-237 "NPN Transistors" 2n3567 NSE459 NSDU05 NSD458 2N6718 TO-237 2N3569 2N6593 2N5336 2N3567 MPSW06

    Untitled

    Abstract: No abstract text available
    Text: p CENTRAL SEMICONDUCTOR 5<Tw£T»í:¿° gc?K?te^!íEeííi5ee@p e@s2p . CEN-A44 CEN-A45 CEN-A45A NPN SILICON TRANSISTOR ' H I G H VOLTAGE General § @ in ig © ii^ y g f@ r € rp » JEDEC TO-92 CASE EBC 145 Adams Avenue Hauppauge, New York 1 1 7 8 8


    OCR Scan     		PDF CEN-A44 CEN-A45 CEN-A45A CEN-A44, EN-A45 MPS-A44, MPS-A45 100mA

    A45A

    Abstract: CEN-A45A CEN-A44 CEN-A45 MPS-A44 MPS-A45 TRANSISTOR A44 TRANSISTOR a45 MPSA44
    Text: CENTRAL nflnb3 oooD3t.a i i ,-p a s - a s SEMICONDUCTOR CEN-A44 CEN-A45 c e n -a 4s a @5{?^L£^¡iíe^e@9e esEsieEñgaB NPN SILICON TRANSISTOR . 'HIGH VOLTAGE € @ g it r ü i JEDEC TO-92 CASE EBC 1 4 5 A d a m s A ve n u e H auppauge, N e w Y o rk 1 1 7 8 8


    OCR Scan     		PDF cen-a44 cen-a45 cen-a45a to-92 CEN-A44, EN-A45 CEN-A45A MPS-A44, MPS-A45 100mA A45A MPS-A44 TRANSISTOR A44 TRANSISTOR a45 MPSA44

    TRANSISTOR A44

    Abstract: BR A44
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor NPN Silicon MPSA44 M otorola P referred Device EMITTER 1 MAXIM UM RATINGS 3 Rating Symbol Value Unit C ollector-E m itter Voltage v CEO 400 Vdc C ollector-B ase Voltage VCBO 500 Vdc E m itter-B ase Voltage


    OCR Scan     		PDF MPSA44 O-226AA) TRANSISTOR A44 BR A44