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    TRANSISTORS 8550 Search Results

    TRANSISTORS 8550 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    HIT8550-N-E-Q Renesas Electronics Corporation Small Signal Bipolar Transistors Visit Renesas Electronics Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTORS 8550 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC 8550

    Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
    Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4


    Original     		PDF 3SK309 3SK317 3SK318 BB101C BB102C BB301C BB302C BB304C BB305C BB501C 2SC 8550 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545

    c2328a

    Abstract: B564A c 2328a 8050 sot89 SD471A D471A 8550 SOT-89 63916 BC337 medium power transistors
    Text: NPN Medium Power Transistors NPN Medium Power Transistors Device No. [Mark] Case Style VCES* V V CBO EBO V (V) Min (V) Min Min VCEO I CBO VCB I V hFE @ C & CE Min Max (mA) (V) (nA) @ (V) Max IC C ob (mA) @ (V) & (pF) I (V) Max (I = C ) Max Min Max B 10 V CE(SAT)


    Original     		PDF O-92L OT-89 KSB1121 MPS8550 MPS6562 c2328a B564A c 2328a 8050 sot89 SD471A D471A 8550 SOT-89 63916 BC337 medium power transistors

    MSM 7227

    Abstract: FU 9024 N Panaflo fbk TPV 3100 p9712 panaflo fba06t24h fu 9024 MSM 8260 FBA08A24H FBA09A24H
    Text: SECTION REFERENCE INDEX Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . . . . . . . . . 20-279 Semiconductors, ICs, Transistors, Diodes, Rectifiers . . . . . . . 280-622 Crystals, Oscillators . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 623-654


    Original     		PDF CR371-ND CR372-ND 07199-SP036 07199-SP072 07100-SP024 07100-SP036 07100-SP072 07145-SP036 07145-SP072 MSM 7227 FU 9024 N Panaflo fbk TPV 3100 p9712 panaflo fba06t24h fu 9024 MSM 8260 FBA08A24H FBA09A24H

    BR 8550D

    Abstract: 8550D transistor 8550c st 8550d 8550d BR 8550 he 8550d transistor 8550D transistor 8550D PNP transistor 8550
    Text: ST 8550 1.5A PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 8550C 8550D BR 8550D 8550D transistor 8550c st 8550d 8550d BR 8550 he 8550d transistor 8550D transistor 8550D PNP transistor 8550

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 8550S TRANSISTOR PNP FEATURE Excellent hFE linearity 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit


    Original     		PDF 8550S -100uA, -50mA -500mA -500mA, -20mA 30MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 8550SS TRANSISTOR PNP 1.EMITTER FEATURES z General Purpose Switching and Amplification. 2.COLLECTOR 3.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF 8550SS -100mA -800mA -800mA -80mA -50mA 30MHz

    2TY marking code

    Abstract: No abstract text available
    Text: WILLAS FM120-M 8550SLT1THRU FM1200-M SOT-23 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Prod SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers SOT-23


    Original     		PDF OT-23 OD-123+ FM120-M 8550SLT FM1200-M OT-23 OD-123H FM120-MH FM130-MH FM140-MH 2TY marking code

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


    Original     		PDF REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009

    NPN transistor 8050s

    Abstract: 8050S 8550S
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8050S TO-92 TRANSISTOR NPN FEATURES z Complimentary to 8550S z Collector current: IC=0.5A 1.EMITTER 2.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol


    Original     		PDF 8050S 8550S 500mA 500mA, 30MHz NPN transistor 8050s 8050S 8550S

    8050S Transistor

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 8050S TRANSISTOR NPN FEATURES 1.EMITTER z Complimentary to 8550S z Collector Current: IC=0.5A 2.COLLECTOR 3.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF 8050S 8550S 500mA 500mA, 30MHz 8050S Transistor

    8550SS

    Abstract: transistor 8550ss
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8550SS TRANSISTOR（ PNP ） TO—92 FEATURES Power dissipation PCM : 1W （Tamb=25℃） 1.EMITTER Collector current ICM: -1.5 A Collector-base voltage 2. COLLECTOR 3. BASE


    Original     		PDF 8550SS O--92 270TYP 050TYP 8550SS transistor 8550ss

    8550S

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8550S TRANSISTOR PNP TO-92 FEATURE Excellent hFE linearity 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value


    Original     		PDF 8550S -100uA, -50mA -500mA -500mA, -20mA 30MHz

    8550S

    Abstract: No abstract text available
    Text: 8550S PNP TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Excellent hFE linearity MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25


    Original     		PDF 8550S -500mA -500mA, -50mA -20mA 30MHz -100uA,

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 8550SS Plastic-Encapsulate Transistors TRANSISTOR PNP TO-92 FEATURES 1. EMITTER Power dissipation PCM : 1 W 2. COLLECTOR (TA=25℃) 3. BASE 1 2 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol


    Original     		PDF 8550SS -100mA -800mA -800mA, -80mA -10mA -50mA -30MHZ

    Untitled

    Abstract: No abstract text available
    Text: TO-92 Plastic-Encapsulate Transistors 8550S TRANSISTOR PNP TO-92 FEATURE Power dissipation PCM: 0.625 1.EMITTER W (Tamb=25℃) 2. COLLECTOR Collector current -0.5 A ICM: Collector-base voltage -40 V V(BR)CBO: Operating and storage junction temperature range


    Original     		PDF 8550S -50mA -500mA -500mA, -20mA 30MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8550SS TRANSISTOR PNP TO-92 FEATURES Power dissipation PCM: 1 W (Tamb=25℃) 1. EMITTER Collector current ICM: -1.5 A - 40 V 2. COLLECTOR Collector-base voltage V(BR)CBO:


    Original     		PDF 8550SS -800mA, -50mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8550S TRANSISTOR PNP TO-92 FEATURE Power dissipation PCM: 0.625 1.EMITTER W (Tamb=25℃) 2. COLLECTOR Collector current -0.5 A ICM: Collector-base voltage -40 V V(BR)CBO:


    Original     		PDF 8550S -50mA -500mA -500mA, -20mA 30MHz

    Untitled

    Abstract: No abstract text available
    Text: WILLAS FM120-M+ 8550HXLT1 THRU General Purpose Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.


    Original     		PDF OD-123+ 8550HXLT1 FM120-M+ FM1200-M+ OD-123H FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH

    Untitled

    Abstract: No abstract text available
    Text: TO-92 8550SS Plastic-Encapsulate Transistors TRANSISTOR PNP TO-92 FEATURES 1. EMITTER Power dissipation PCM : 1 W 2. COLLECTOR (TA=25℃) 3. BASE 1 2 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		PDF 8550SS -100mA -800mA -800mA, -80mA -10mA -50mA -30MHZ

    datasheet of ic 555

    Abstract: IC 555 datasheet ic 555 8550S
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8550S TRANSISTOR（ PNP ） TO—92 FEATURE Power dissipation PCM : 0.625 W（Tamb=25℃） Collector current ICM : -0.5 A Collector-base voltage V BR CBO : -40 V Operating and storage junction temperature range


    Original     		PDF 8550S O--92 -100A 30MHz 270TYP 050TYP datasheet of ic 555 IC 555 datasheet ic 555 8550S

    transistor+8550ss

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 8550SS Plastic-Encapsulate Transistors TRANSISTOR PNP TO-92 FEATURES 1. EMITTER 2. BASE Power dissipation PCM : 1 W (TA=25℃) : 2 W (TC=25℃) 3. COLLECTOR 1 2 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted


    Original     		PDF 8550SS -100mA -800mA -800mA, -80mA -10mA -50mA -30MHZ transistor+8550ss

    equivalent transistor 8550

    Abstract: 2sa1015 equivalent 8550 pnp transistor Bc 8550 9015 transistor transistor BC 557 TRANSISTOR BC 327 PNP 8550 9015 pnp transistor 9015
    Text: 1 of 1 HONEY TO-92 Transistors Japan Type Equivalent Table PNP Silicon Epitaxial Planar Transistor To-92 Plastic Package JAPAN HONEY JAPAN HONEY JAPAN HONEY 2SA853 HN / BC 559 / 9015 2SA978 HN / BC 560 / 9015 2SA1318 HN / BC 556 / 9015 2SA854 HN / BC 327 / 8550


    Original     		PDF To-92 2SA853 2SA978 2SA1318 2SA854 2SA987 2SA1323 2SA855 2SA989 2SA1334 equivalent transistor 8550 2sa1015 equivalent 8550 pnp transistor Bc 8550 9015 transistor transistor BC 557 TRANSISTOR BC 327 PNP 8550 9015 pnp transistor 9015

    bc 558 equivalent

    Abstract: pnp transistor 9015 transistor BC 557 equivalent transistor 8550 BC 9015 transistor 2SA733 equivalent 2SA561 equivalent 2SA733 transistor equivalent transistor bc 558 2SA562 equivalent
    Text: 1 of 1 HONEY TO-92 Transistors Japan Type Equivalent Table PNP Silicon Epitaxial Planar Transistor To-92 Plastic Package JAPAN HONEY JAPAN HONEY JAPAN HONEY 2SA467 HN / BC 327 / 8550 2SA578 HN / BC 560 / 9015 2SA721 HN / BC 559 / 9015 2SA494 HN / BC 559 / 9015


    Original     		PDF To-92 2SA467 2SA578 2SA721 2SA494 2SA579 2SA723 2SA495 2SA608 2SA724 bc 558 equivalent pnp transistor 9015 transistor BC 557 equivalent transistor 8550 BC 9015 transistor 2SA733 equivalent 2SA561 equivalent 2SA733 transistor equivalent transistor bc 558 2SA562 equivalent

    8050S

    Abstract: No abstract text available
    Text: 8050S NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 4.45 5.21 2. COLLECTOR 1.25MAX 3. BASE 2.92 MIN 12.7 6.35 MIN MIN 0.41 0.41 0.53 0.48 Seating Plane Features Complimentary to 8550S Collector current: IC=0.5A 3.43 MIN 2.41 2.67 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF 8050S 25MAX 8550S 500mA 500mA, 30MHz