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    TRANSISTORS 5A1 J Search Results

    TRANSISTORS 5A1 J Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTORS 5A1 J Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    5B1 SOT23

    Abstract: 5B1 SOT-23 sot23 marking 5c1 marking 5b1
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon ƽ Pb-Free Package is available. LBC807-16LT1 DEVICE MARKING AND ORDERING INFORMATION Device Marking LBC807-16LT1 LBC807-16LT1G 5A1 SOT-23 5B1 SOT-23 5B1 Pb-Free LBC807-40LT1 LBC807-40LT1G


    Original     		PDF LBC807-16LT1 LBC807-16LT1G OT-23 LBC807-40LT1 LBC807-40LT1G LBC807-25LT1 LBC807-25LT1G 5B1 SOT23 5B1 SOT-23 sot23 marking 5c1 marking 5b1

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BC807-16LT1 BC807-25LT1 BC807-40LT1 TRANSISTOR PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR W (Tamb=25℃) A -50 V 0. 95 0. 4 -0.5 0. 95 2. 4 1. 3 1. 9 Collector current


    Original     		PDF OT-23 BC807-16LT1 BC807-25LT1 BC807-40LT1 OT-23 -100mA -500mA, -50mA BC807-16LT1 BC807-25LT1

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 1. BASE 2. EMITTER １．０ 3. COLLECTOR W（Tamb=25℃） ２．４ １．３ V ０．９５ A ０．４ １．９ FEATURES Power dissipation PCM : 0.3 Collector current


    Original     		PDF OT-23 BC807-16LT1 BC807-25LT1 BC807-40LT1 BC807-25LT1 BC807-40LT1 037TPY 950TPY 550REF

    5C1 SOT-23

    Abstract: sot23 marking 5c1 LBC80725LT3G marking 5b1 5B1 sot23 marking 5a1 sot23 LBC807-40LT3G LBC807-25 LBC807-16LT1G LBC807-16LT3G
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO max = -45 V. ƽGeneral purpose switching and amplification.


    Original     		PDF LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G LBC807 3000/Tape LBC807-16LT3G 10000/Tape 5C1 SOT-23 sot23 marking 5c1 LBC80725LT3G marking 5b1 5B1 sot23 marking 5a1 sot23 LBC807-40LT3G LBC807-25 LBC807-16LT1G LBC807-16LT3G

    5B1 SOT-23

    Abstract: LBC807-16LT1G LBC807-16LT3G LBC807-25LT1G LBC807-40LT1G LBC807-40LT3G sot23 marking 5c1 Transistors 5A1 J
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO max = -45 V. ƽGeneral purpose switching and amplification.


    Original     		PDF LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G LBC807 3000/Tape LBC807-16LT3G 10000/Tape 5B1 SOT-23 LBC807-16LT1G LBC807-16LT3G LBC807-25LT1G LBC807-40LT1G LBC807-40LT3G sot23 marking 5c1 Transistors 5A1 J

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO max = -45 V. ƽGeneral purpose switching and amplification.


    Original     		PDF LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G LBC807 3000/Tape LBC807-16LT3G 10000/Tape

    marking code 5b1

    Abstract: 5C1 SOT-23 Willas Electronic 5B1 SOT 23 5B1 SOT-23 sot23 marking 5c1 marking 5a1
    Text: WILLAS BC807-xxLT1 General Purpose Transistors PNP Silicon FEATURE Collector current capability IC = -500 mA. Collector-emitter voltage VCEO max = -45 V. General purpose switching and amplification. PNP complement: BC807 Series. SOT–23 We declare that the material of product compliance with RoHS requirements.


    Original     		PDF BC807 BC807-xxLT1 BC807-16LT1 3000/Tape BC807-25LT1 BC807-40LT1 OT-23 marking code 5b1 5C1 SOT-23 Willas Electronic 5B1 SOT 23 5B1 SOT-23 sot23 marking 5c1 marking 5a1

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO max = -45 V. ƽGeneral purpose switching and amplification.


    Original     		PDF LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G LBC807 3000/Tape LBC807-16LT3G 10000/Tape

    Untitled

    Abstract: No abstract text available
    Text: BC807-16 BC807-25 BC807-40 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • • • • PNP Silicon General Purpose Transistors Capable of 0.3Watts of Power Dissipation. Collector-current 0.5A Collector-base Voltage 50V


    Original     		PDF BC807-16 BC807-25 BC807-40 -55OC OT-23 OT-23 MIL-STD-202,

    marking 5a1 sot23

    Abstract: No abstract text available
    Text: MCC BC807-16 BC807-25 BC807-40   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# Features • • • • PNP Silicon General Purpose Transistors Capable of 0.3Watts of Power Dissipation. Collector-current 0.5A


    Original     		PDF BC807-16 BC807-25 BC807-40 OT-23 -55OC OT-23 MIL-STD-202, BC807-40 marking 5a1 sot23

    Untitled

    Abstract: No abstract text available
    Text: MCC BC807-16 BC807-25 BC807-40   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • PNP Silicon General Purpose Transistors Capable of 0.3Watts of Power Dissipation. Collector-current 0.5A


    Original     		PDF BC807-16 BC807-25 BC807-40 -55OC OT-23 OT-23 MIL-STD-202,

    BC807-40/5C

    Abstract: No abstract text available
    Text: MCC BC807-16 BC807-25 BC807-40   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • PNP Silicon General Purpose Transistors Capable of 0.3Watts of Power Dissipation. Collector-current 0.5A


    Original     		PDF BC807-16 BC807-25 BC807-40 -55OC OT-23 OT-23 MIL-STD-202, BC807-40/5C

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO max = -45 V. ƽGeneral purpose switching and amplification.


    Original     		PDF LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G LBC807 3000/Tape LBC807-16LT3G 10000/Tape

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G S-LBC807-16LT1G S-LBC807-25LT1G S-LBC807-40LT1G PNP Silicon FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO max = -45 V.


    Original     		PDF LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G S-LBC807-16LT1G S-LBC807-25LT1G S-LBC807-40LT1G LBC807 AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO max = -45 V. ƽGeneral purpose switching and amplification.


    Original     		PDF LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G LBC807 AEC-Q101 S-LBC807-16LT1G LBC807-16LT3G S-LBC807-16LT3G

    BC807-40

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components BC807-16 BC807-25 BC807-40   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • PNP Silicon General Purpose Transistors Capable of 0.3Watts of Power Dissipation.


    Original     		PDF BC807-16 BC807-25 BC807-40 OT-23 -55OC OT-23 MIL-STD-202, BC807-40

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components BC807-16 BC807-25 BC807-40   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • PNP Silicon General Purpose Transistors Capable of 0.3Watts of Power Dissipation.


    Original     		PDF BC807-16 BC807-25 BC807-40 -55OC OT-23 OT-23 MIL-STD-202,

    BC807-40

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components BC807-16 BC807-25 BC807-40   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • PNP Silicon General Purpose Transistors Capable of 0.3Watts of Power Dissipation.


    Original     		PDF BC807-16 BC807-25 BC807-40 OT-23 -55OC OT-23 MIL-STD-202, BC807-40

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components BC807-16 BC807-25 BC807-40   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • PNP Silicon General Purpose Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates


    Original     		PDF BC807-16 BC807-25 BC807-40 -55OC OT-23 OT-23 MIL-STD-202

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components BC807-16 BC807-25 BC807-40   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • PNP Silicon General Purpose Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates


    Original     		PDF BC807-16 BC807-25 BC807-40 -55OC OT-23 OT-23 MIL-STD-202,

    Transistors 5A1 8

    Abstract: SBC80-16L marking 5a1 5B1 SOT-23 BC807 5C
    Text: BC807-16L, SBC807­16L BC807-25L, SBC807­25L, BC807-40L, SBC807-40L General Purpose Transistors http://onsemi.com PNP Silicon COLLECTOR 3 Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique


    Original     		PDF BC807-16L, SBC80716L BC807-25L, SBC80725L, BC807-40L, SBC807-40L AEC-Q101 OT-23 BC807-16LT1/D Transistors 5A1 8 SBC80-16L marking 5a1 5B1 SOT-23 BC807 5C

    Untitled

    Abstract: No abstract text available
    Text: BC807-16L, SBC807­16L BC807-25L, SBC807­25L, BC807-40L, SBC807-40L General Purpose Transistors http://onsemi.com PNP Silicon COLLECTOR 3 Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique


    Original     		PDF BC807-16L, SBC807 BC807-25L, BC807-40L, SBC807-40L BC807â 16LT1/D

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Core Driver Transistor M M PQ3725 NPN Silicon JV I a si M otorola Preferred Device JV I 5a1 i II ir v z i 5 Q E H iv= a 3 1 CASE 751B -05, STYLE 4 S O -16 MAXIMUM RATINGS Rating C ollector-E m itter Voltage C ollector-E m itter Voltage


    OCR Scan     		PDF PQ3725

    Untitled

    Abstract: No abstract text available
    Text: : S v î^ S e m i ; SOT -23 Plastic Encapsulate Transistors 5YM5EMI SEMICONDUCTOR BC807 -16LT1 BC807 -25LT1 BC8 0 7 -40LT1 TRANSISTOR SOT — 23 1. BASE 2. EMI H E R 3. COLLECTOR FEATURES Power dissipation 0.3 Pcm Collector current 1 cm : PNP W -0 .5 (Tamb=25 °C)


    OCR Scan     		PDF BC807 -16LT1 -25LT1 -40LT1 -10mA OT-23 950TPY 037TPY 550REF