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    TRANSISTOR ZO 607 Search Results

    TRANSISTOR ZO 607 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR ZO 607 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR NE58219 / 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The NE58219 / 2SC5004 is a low supply voltage transistor in millimeters designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the


    Original     		PDF NE58219 2SC5004 2SC5004 NE58219-A 2SC5004-A NE58219-T1-A 2SC5004-T1-A perfor516

    MHW1345

    Abstract: catv amplifier Amplifier Modules motorola MHW7185CL FUJI GaAs FET CATV amplifier module transistor HATTELAND mhw6342t 85690 TRANSISTOR C 6090
    Text: Device Data Book CATV DISTRIBUTION AMPLIFIER MODULE DEVICE DATA DL209/D Rev. 0 10/2002 CATV Distribution Amplifier Module Device Data Table of Contents Page Foreword . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . iii Data Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . iii


    Original     		PDF DL209/D MHW1345 catv amplifier Amplifier Modules motorola MHW7185CL FUJI GaAs FET CATV amplifier module transistor HATTELAND mhw6342t 85690 TRANSISTOR C 6090

    transistor zo 607

    Abstract: zo 607 MA 2SC5004 2SC5004-T1 NE58219 NE58219-T1 nec 237 521 02 NE582
    Text: DATA SHEET SILICON TRANSISTOR NE58219 / 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The NE58219 / 2SC5004 is a low supply voltage transistor in millimeters designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the


    Original     		PDF NE58219 2SC5004 2SC5004 NE58219 NE58219-T1 2SC5004-T1 transistor zo 607 zo 607 MA 2SC5004-T1 NE58219-T1 nec 237 521 02 NE582

    NEC JAPAN 237 521 02

    Abstract: transistor zo 607 2SC5004
    Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the


    Original     		PDF 2SC5004 2SC5004 NEC JAPAN 237 521 02 transistor zo 607

    TD2400

    Abstract: transistor zo 607 2SC5007 2SC5007-T1 NEC 1555 AK-804 164-1-1
    Text: DATA SHEET SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range


    Original     		PDF 2SC5007 2SC5007 TD2400 transistor zo 607 2SC5007-T1 NEC 1555 AK-804 164-1-1

    NEC NF 932

    Abstract: ZO 103 MA 75 623 2SC5009 2SC5009-T1 TD-2430 power transistor 3055
    Text: DATA SHEET SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS in milimeters noise figure, high gain, and high current capability achieve a very wide 1.6± 0.1 0.8± 0.1 dynamic range and excellent linearity. This is achieved by direct nitride


    Original     		PDF 2SC5009 2SC5009 NEC NF 932 ZO 103 MA 75 623 2SC5009-T1 TD-2430 power transistor 3055

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    NEC JAPAN 237 521 02

    Abstract: nec 237 521 02 transistor zo 607 2SC5004
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    2SC5007

    Abstract: 2SC5007-T1
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    2SC5009

    Abstract: 2SC5009-T1
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    CI 74381

    Abstract: X009
    Text: 6N1135/ 6N1136 VISHAY Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 °C Rated Features • • • • • • • • Isolation Test Voltage: 5300 VRMS Operating Temperature from -55 °C to +110 °C TTL Compatible


    Original     		PDF 6N1135/ 6N1136 i179081 E52744 VDE0884) 6N1135 6N1136 6N1135-X007 D-74025 18-Jun-04 CI 74381 X009

    SFH613

    Abstract: No abstract text available
    Text: SFH6135/ SFH6136 VISHAY Vishay Semiconductors High Speed Optocoupler, 1 MBd, Transistor Output Features • • • • • • • Isolation Test Voltage: 5300 VRMS TTL Compatible High Bit Rates: 1.0 Mbit/s High Common-mode Interference Immunity Bandwidth 2.0 MHz


    Original     		PDF SFH6135/ SFH6136 i179081 E52744 VDE0884) D-74025 27-Apr-04 SFH613

    SFH6135

    Abstract: SFH6136 VDE0884 DIN 268
    Text: SFH6135/ SFH6136 VISHAY Vishay Semiconductors High Speed Optocoupler, 1 MBd, Transistor Output Features • • • • • • • Isolation Test Voltage: 5300 VRMS TTL Compatible High Bit Rates: 1.0 Mbit/s High Common-mode Interference Immunity Bandwidth 2.0 MHz


    Original     		PDF SFH6135/ SFH6136 i179081 E52744 D-74025 20-Nov-03 SFH6135 SFH6136 VDE0884 DIN 268

    SFH6135

    Abstract: SFH6136 VDE0884
    Text: SFH6135/ SFH6136 Vishay Semiconductors High Speed Optocoupler, 1 MBd, Transistor Output Features • • • • • • • • • Isolation Test Voltage: 5300 VRMS TTL Compatible High Bit Rates: 1.0 Mbit/s High Common-mode Interference Immunity Bandwidth 2.0 MHz


    Original     		PDF SFH6135/ SFH6136 2002/95/EC 2002/96/EC UL1577, E52744 VDE0884) i179081 SFH61s D-74025 SFH6135 SFH6136 VDE0884

    6N136-X007

    Abstract: optocoupler 6n136 6N135-X007 k6n135 6N135 6N136 6N136-X006 VDE0884 ic 6n136
    Text: 6N135/ 6N136 Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output Features • • • • • • • • • Isolation Test Voltage: 5300 VRMS TTL Compatible High Bit Rates: 1.0 Mbit/s High Common-Mode Interference Immunity


    Original     		PDF 6N135/ 6N136 2002/95/EC 2002/96/EC UL1577, E52744 VDE0884) i179081 D-74025 26-Oct-04 6N136-X007 optocoupler 6n136 6N135-X007 k6n135 6N135 6N136 6N136-X006 VDE0884 ic 6n136

    6N135

    Abstract: 6N135-X007 6N136 6N136-X006 6N136-X007 6N136-X009 VDE0884
    Text: 6N135/ 6N136 VISHAY Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output Features • • • • • • • Isolation Test Voltage: 5300 VRMS TTL Compatible High Bit Rates: 1.0 Mbit/s High Common-Mode Interference Immunity


    Original     		PDF 6N135/ 6N136 i179081 E52744 VDE0884) 6N135 6N135 6N136 D-74025 26-Apr-04 6N135-X007 6N136-X006 6N136-X007 6N136-X009 VDE0884

    SFH163

    Abstract: SFH6135 SFH6136 VDE0884
    Text: SFH6135/ SFH6136 Vishay Semiconductors High Speed Optocoupler, 1 MBd, Transistor Output Features • • • • • • • • • Isolation Test Voltage: 5300 VRMS TTL Compatible High Bit Rates: 1.0 Mbit/s High Common-mode Interference Immunity Bandwidth 2.0 MHz


    Original     		PDF SFH6135/ SFH6136 2002/95/EC 2002/96/EC UL1577, E52744 VDE0884) i179081 SFH61ed 08-Apr-05 SFH163 SFH6135 SFH6136 VDE0884

    K6N135

    Abstract: 83604 6N135 6N136 VDE0884 6n136 smd 6N136 IC
    Text: 6N135/ 6N136 VISHAY Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output Features • • • • • • • Isolation Test Voltage: 5300 VRMS TTL Compatible High Bit Rates: 1.0 Mbit/s High Common-Mode Interference Immunity


    Original     		PDF 6N135/ 6N136 i179081 E52744 VDE0884) 6N135 6N135 6N136 D-74025 04-Dec-03 K6N135 83604 VDE0884 6n136 smd 6N136 IC

    TRANSISTOR 131-6 BJ 946

    Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
    Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise


    OCR Scan     		PDF B3-B3715 B3715-X-X-7600 TRANSISTOR 131-6 BJ 946 transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16

    D 1437 transistor

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2 S C 5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/M IX. It is suitable for a high density surface mount assembly since the


    OCR Scan     		PDF 2SC5004 D 1437 transistor

    NEC 1357

    Abstract: LA 8873 TRANSISTOR C 4460
    Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/MIX. It is suitable for a high density surface mount assem bly since the


    OCR Scan     		PDF 2SC5004 2SC5004 NEC 1357 LA 8873 TRANSISTOR C 4460

    transistor NEC B 617

    Abstract: nec. 5.5 473
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range


    OCR Scan     		PDF 2SC5007 2SC5007 transistor NEC B 617 nec. 5.5 473

    marking GG

    Abstract: marking code 604 SOT23
    Text: NPN Silicon RF Transistor BFR 93P • For low -distortion broadband am plifiers up to 1 GHz at collector currents from 2 to 30 mA. c ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel Package


    OCR Scan     		PDF OT-23 marking GG marking code 604 SOT23

    BFT65

    Abstract: D1279 Siemens 1414 D1275 germanium Germanium drift transistor diode a811 Siemens Halbleiter germanium transistor legiert
    Text: Table of Contents Selection Guide Ordering Codes Inhaltsverzeichnis Typeniibersicht Bestellnummern Scope of Applications Technical Information Quality Specifications Einsatzhinweise Technische Angaben Qualitatsangaben Package Outlines Mounting Instructions


    OCR Scan     		PDF