TRANSISTOR ZO 103 MA Search Results

TRANSISTOR ZO 103 MA Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR ZO 103 MA Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IEC 62 code Abstract: PBR941 Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PBR941 UHF wideband transistor Product specification Supersedes data of 1998 May 08 File under Discrete Semiconductors, SC14 1998 Aug 10 Philips Semiconductors Product specification UHF wideband transistor	Original	M3D088 PBR941 PBR941 SCA60 125104/1200/05/pp16 771-PBR941-T/R IEC 62 code	PDF
AT-42085 Abstract: at-42085g S21E at42085g Text: AT-42085 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-42085 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42085 is housed in a low cost .085" diameter plastic package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many	Original	AT-42085 AT-42085 5965-8913EN 5989-2655EN at-42085g S21E at42085g	PDF
Seven Transistor Array PNP Abstract: pnp DARLINGTON TRANSISTOR ARRAY pnp darlington array pnp 8 transistor array M54561P PNP DARLINGTON ARRAYS darlington Mitsubishi npn tr array npn 8 transistor array NPN darlington array Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54561P 7-UNIT 300mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54561P is seven-circuit output-sourcing Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform	Original	M54561P 300mA M54561P 300mA) Seven Transistor Array PNP pnp DARLINGTON TRANSISTOR ARRAY pnp darlington array pnp 8 transistor array PNP DARLINGTON ARRAYS darlington Mitsubishi npn tr array npn 8 transistor array NPN darlington array	PDF
M54519P Abstract: M54519FP IC M54519P Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54519P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54519P and M54519FP are seven-circuit Darlington transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current	Original	M54519P/FP 400mA M54519P M54519FP 400mA) IC M54519P	PDF
M54527P Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54527P 6-UNIT 150mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54527P is six-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.	Original	M54527P 150mA M54527P 150mA)	PDF
M54528P Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54528P 7-UNIT 150mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54528P is seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.	Original	M54528P 150mA M54528P 150mA)	PDF
transistor TT 2146 Abstract: AT-32032 AT-32032-BLK 32032 Text: AT-32032 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-32032 is a high performance NPN bipolar transistor that has been optimized for maximum ft at low voltage operation, making it ideal for use in battery	Original	AT-32032 AT-32032 OT323 SC-70) OT-323 5965-6216E 5989-2644EN transistor TT 2146 AT-32032-BLK 32032	PDF
M54539P Abstract: M54539 Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54539P 6-UNIT 700mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54539P six-circuit transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.	Original	M54539P 700mA M54539P 700mA) M54539	PDF
zener diode 10.5k Abstract: DARLINGTON TRANSISTOR ARRAY M54525AGP DIODE 85c Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54525AGP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DESCRIPTION M54525AGP is seven-circuit Darlington transistor array with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.	Original	M54525AGP 500mA M54525AGP 500mA zener diode 10.5k DARLINGTON TRANSISTOR ARRAY DIODE 85c	PDF
M54525AGP Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54525AGP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DESCRIPTION M54525AGP is seven-circuit Darlington transistor array with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.	Original	M54525AGP 500mA M54525AGP 500mA	PDF
M54585KP Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54585KP 8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DESCRIPTION M54585KP is eight-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.	Original	M54585KP 500mA M54585KP 500mA)	PDF
M63804FP Abstract: M63804GP M63804KP M63804P 4 digit 40 pin IC configuration Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63804P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY DESCRIPTION M63804P, M63804FP, M63804GP and M64804KP are seven-circuit Singe transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.	Original	M63804P/FP/GP/KP 300mA M63804P, M63804FP, M63804GP M64804KP 300mA) M63804FP M63804KP M63804P 4 digit 40 pin IC configuration	PDF
Seven Transistor Array PNP Abstract: PNP DARLINGTON ARRAYS pnp 8 transistor array M54580FP M54580P pnp darlington array npn 8 transistor array npn tr array Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54580P/FP 7-UNIT 150mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54580P and M54580FP are seven-circuit output-sourcing Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.	Original	M54580P/FP 150mA M54580P M54580FP 150mA) Seven Transistor Array PNP PNP DARLINGTON ARRAYS pnp 8 transistor array pnp darlington array npn 8 transistor array npn tr array	PDF
transistor kp Abstract: M63802FP M63802GP M63802KP M63802P Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63802P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY DESCRIPTION M63802P, M63802FP, M63802GP and M63802KP are seven-circuit Singe transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.	Original	M63802P/FP/GP/KP 300mA M63802P, M63802FP, M63802GP M63802KP 300mA) transistor kp M63802FP M63802P	PDF

M54526P Abstract: M54526FP Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54526P/FP 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54526P and M54526FP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits	Original	M54526P/FP 500mA M54526P M54526FP 500mA)	PDF
pnp darlington array Abstract: Seven Transistor Array PNP pnp DARLINGTON TRANSISTOR ARRAY pnp 8 transistor array TRANSISTOR ARRAY NPN POWER DARLINGTON Darlington Transistor Array high voltage darlington array M54580FP power transistor array Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> POWEREX M54580P/FP 7-UNIT 150mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54580P and M54580FP are seven-circuit output-sourcing Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.	Original	M54580P/FP 150mA M54580P M54580FP 150mA) pnp darlington array Seven Transistor Array PNP pnp DARLINGTON TRANSISTOR ARRAY pnp 8 transistor array TRANSISTOR ARRAY NPN POWER DARLINGTON Darlington Transistor Array high voltage darlington array power transistor array	PDF
8 pin 4v power supply ic Abstract: Seven Transistor Array PNP M54222 M54566FP M54566P pnp 8 transistor array pnp DARLINGTON TRANSISTOR ARRAY PNP DARLINGTON ARRAYS Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54566P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54566P and M54566FP are seven-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor	Original	M54566P/FP 400mA M54566P M54566FP 400mA) 8 pin 4v power supply ic Seven Transistor Array PNP M54222 pnp 8 transistor array pnp DARLINGTON TRANSISTOR ARRAY PNP DARLINGTON ARRAYS	PDF
npn power transistor ic 400ma Abstract: M54530FP M54530P Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54530P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54530P and M54530FP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits	Original	M54530P/FP 400mA M54530P M54530FP 400mA) npn power transistor ic 400ma	PDF
M54531FP Abstract: M54531P Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54531P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54531P and M54531FP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits	Original	M54531P/FP 400mA M54531P M54531FP 400mA)	PDF
M54522P Abstract: M54522P equivalent M54522FP 18P4G 20P2N-A npn 8 transistor array common collector npn array Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54522P/FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54522P and M54522FP are eight-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits	Original	M54522P/FP 400mA M54522P M54522FP 400mA) M54522P equivalent 18P4G 20P2N-A npn 8 transistor array common collector npn array	PDF
M63803GP equivalent Abstract: M63803FP M63803GP M63803KP M63803P KP400 Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63803P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY DESCRIPTION M63803P, M63803FP, M63803GP and M63803KP are seven-circuit Singe transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.	Original	M63803P/FP/GP/KP 300mA M63803P, M63803FP, M63803GP M63803KP 300mA) M63803GP equivalent M63803FP M63803P KP400	PDF
M54585P Abstract: M54585FP common collector npn array 18P4G 20P2N-A npn 8 transistor array Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54585P/FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54585P and M54585FP are eight-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits	Original	M54585P/FP 500mA M54585P M54585FP 500mA) common collector npn array 18P4G 20P2N-A npn 8 transistor array	PDF
single ic 1hz clock generator Abstract: 87021AMI ICS87021I Text: ICS87021I ÷1/÷2 DIFFERENTIAL-TO-LVCMOS/LVTTL CLOCK GENERATOR GENERAL DESCRIPTION FEATURES The ICS87021I is a high perfor mance ÷1/÷2 ICS Differential-to-LVCMOS/LVTTL Clock Generator HiPerClockS and a member of the HiPerClockS™ family of High Performance Clock Solutions from IDT. The CLK,	Original	ICS87021I ICS87021I single ic 1hz clock generator 87021AMI	PDF
DRO lnb Abstract: BFG424W Text: BFG424W NPN 25 GHz wideband transistor Rev. 01 — 21 March 2006 Product data sheet 1. Product profile 1.1 General description NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package.	Original	BFG424W OT343R MSC895 BFG424W DRO lnb	PDF

TRANSISTOR ZO 103 MA Search Results

TRANSISTOR ZO 103 MA Result Highlights (5)

TRANSISTOR ZO 103 MA Datasheets Context Search

IEC 62 code

AT-42085

Seven Transistor Array PNP

M54519P

M54527P

M54528P

transistor TT 2146

M54539P

zener diode 10.5k

M54525AGP

M54585KP

M63804FP

Seven Transistor Array PNP

transistor kp

M54526P

pnp darlington array

8 pin 4v power supply ic

npn power transistor ic 400ma

M54531FP

M54522P

M63803GP equivalent

M54585P

single ic 1hz clock generator

DRO lnb