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    TRANSISTOR Y13 Search Results

    TRANSISTOR Y13 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR Y13 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MOTOROLA 2N

    Abstract: 180MH 2N5038 2N503
    Text: 2N5038 20 AMPERES NPN SILICON POWER TRANSISTOR .:?: . . . fast switching speeds and high current capacity ideally suit these parts for use in switching regulators, inverters, wideband amplifiers and power oscillators in industrial and commercial applications.


    Original     		PDF 2N5038 180MH) MOTOROLA 2N 180MH 2N5038 2N503

    2sA1186 transistor

    Abstract: transistor p100 2SA1186 Y130 Y-140 2SC2837 Y140 Y160 5060 transistor 2sc2837 transistor
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1186 DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2837 APPLICATIONS ·For audio and general purpose applications


    Original     		PDF 2SA1186 -150V 2SC2837 2sA1186 transistor transistor p100 2SA1186 Y130 Y-140 2SC2837 Y140 Y160 5060 transistor 2sc2837 transistor

    2SC2838

    Abstract: 2SA1187 transistor 2SC2838 y130 y140 p120 TRANSISTOR P90 P100 P110 of transistor P100
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1187 DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2838 APPLICATIONS ·For audio and general purpose applications


    Original     		PDF 2SA1187 -150V 2SC2838 -150V 2SC2838 2SA1187 transistor 2SC2838 y130 y140 p120 TRANSISTOR P90 P100 P110 of transistor P100

    2SA1186

    Abstract: transistor p100 2SC2837 2sA1186 transistor transistor p90 y130 2sc2837 transistor transistor pnp VCEO 12V Ic 1A Y140 Y160
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1186 DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2837 APPLICATIONS ·For audio and general purpose applications


    Original     		PDF 2SA1186 -150V 2SC2837 2SA1186 transistor p100 2SC2837 2sA1186 transistor transistor p90 y130 2sc2837 transistor transistor pnp VCEO 12V Ic 1A Y140 Y160

    power transistor 2sc3856

    Abstract: 5060 transistor of transistor P100 2SA1492 TRANSISTOR P90 transistor 2sa1492 transistor p100 P120 TRANSISTOR Y130 Y140
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1492 DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -180V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3856 APPLICATIONS ·For audio and general purpose applications


    Original     		PDF 2SA1492 -180V 2SC3856 power transistor 2sc3856 5060 transistor of transistor P100 2SA1492 TRANSISTOR P90 transistor 2sa1492 transistor p100 P120 TRANSISTOR Y130 Y140

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SA1464 SOT-23-3L TRANSISTOR PNP FEATURES Power dissipation PCM : 0.2 W (Tamb=25℃) 1. BASE 2. EMITTER 3. COLLECTOR Collector current ICM : -0.5 A Collector-base voltage


    Original     		PDF OT-23-3L 2SA1464 OT-23-3L -150mA -500mA -50mA -500mA, -20mA -15mA

    marking y13

    Abstract: 2SA1464 marking Y12
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SA1464 SOT-23-3L TRANSISTOR PNP 1. EMITTER 2. BASE 3. COLLECTOR FEATURES W (Tamb=25℃) 2. 80¡ À0. 05 0. 35 1. 9 Collector current A ICM : -0.5 Collector-base voltage


    Original     		PDF OT-23-3L 2SA1464 OT-23-3L -150mA -500mA -50mA -500mA, -20mA 150mA marking y13 2SA1464 marking Y12

    2SA1464

    Abstract: marking Y12 marking y13
    Text: 2SA1464 2SA1464 TRANSISTOR PNP FEATURES SOT-23-3L 1. EMITTER 2. BASE 3. COLLECTOR Power dissipation 0.2 W (Tamb=25℃) 1. 02 Collector current ICM : -0.5 A Collector-base voltage V V(BR)CBO : -60 Operating and storage junction temperature range 0. 95¡ À0. 025


    Original     		PDF 2SA1464 OT-23-3L -150mA -500mA -50mA -500mA, -20mA 150mA 2SA1464 marking Y12 marking y13

    DVP32SN

    Abstract: DVP 28 sv plc diode Y20 delta plc DVP-32sm DVP32SM DVP32SN11TN DVP32SM11N delta plc manual delta plc sc
    Text: 2007-01-23 Model name 5011658300-MNE0 http://www.delta.com.tw/industrialautomation/ Digital I/O Extension Unit Pin Headed ƒ DVP32SN currently only offers TN (NPN) transistor output. 1.3 Model Information DVP32SM11N Instruction Sheet ƒ Please be aware of the following PIN wiring methods for DVP32SN to prevent burn-down of the extension unit.


    Original     		PDF 5011658300-MNE0 DVP32SN DVP32SM11N PIN19, PIN20, PIN39 PIN40 DVP 28 sv plc diode Y20 delta plc DVP-32sm DVP32SM DVP32SN11TN DVP32SM11N delta plc manual delta plc sc

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type PNP Silicon Epitaxial Transistor 2SA1464 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 High fT: fT=400MHz. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base


    Original     		PDF OT-23 400MHz. -150mA -500mA -50mA 150mA

    2SA1464

    Abstract: No abstract text available
    Text: Transys Electronics L I M I T E D SOT-23-3L Plastic-Encapsulated Transistors 2SA1464 SOT-23-3L TRANSISTOR PNP 1. EMITTER 2. BASE 3. COLLECTOR FEATURES W (Tamb=25℃) 2. 80¡ À0. 05 0. 35 1. 9 Collector current A ICM : -0.5 Collector-base voltage V V(BR)CBO : -60


    Original     		PDF OT-23-3L 2SA1464 OT-23-3L -150mA -500mA -50mA -500mA, -20mA 150mA 2SA1464

    fp1 PLC programming

    Abstract: FP0-E32RS fp3 matsua Panasonic PLC FP communication marking code c14r fp3 matsushita AFPX-C30TD c14t EN61131-2 FP10SH
    Text: • FP-X Control Unit Dimensions Unit: mm Dimensions when add-on cassettes (function and communication) are installed ●AFPX-C14 ∗ ∗ (The same dimensions apply to the expansion I/O unit AFPX-E16∗) COM Status display LED N X5 X3 X0 X2 X4 X7 X6 PROG. ERR.


    Original     		PDF AFPX-C14 AFPX-E16) ARCT1B287E ARCT1B287E 200705-5YT fp1 PLC programming FP0-E32RS fp3 matsua Panasonic PLC FP communication marking code c14r fp3 matsushita AFPX-C30TD c14t EN61131-2 FP10SH

    AFC8513

    Abstract: afpxc30pd E30R 60870-5-104 FP0-E32RS FP0E32RS fp-x c14r AFPX-a21 AFPX-C60TD optokoppler PNP
    Text: FP-X Serie Speicherprogrammierbare Steuerungen 02/2008 Leistungsstark Leistungsstark Vielfältige Erweiterungsmöglichkeiten und hohe Geschwindigkeit Schnellste Befehlsabarbeitung Die Befehlsbearbeitungszeit für einen Basisbefehl beträgt 0,32 s ca. 2ms für 5000 Schritte *1


    Original     		PDF CH-6343 AFC8513 afpxc30pd E30R 60870-5-104 FP0-E32RS FP0E32RS fp-x c14r AFPX-a21 AFPX-C60TD optokoppler PNP

    matsua stepping motors

    Abstract: transistor c32
    Text: Programmable Controllers SIGMA Ultra-compact high performance PLC High speed, High capacity, and New functions - V3 launched for new performance stage Actual size: W30 x H90 × D60 mm W1.181 × H3.543 × D2.362 (inch) These materials are printed on ECF pulp.


    Original     		PDF FPG-C32T2H FPG-C28P2H FPG-C32T2HTM FPG-C28P2HTM ARCT1B208E-2 ARCT1B208E-2 matsua stepping motors transistor c32

    2SA1464

    Abstract: 1S955 2SC3739
    Text: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE 2S A 1464 HIGH FREQUENCY AMPLIFIER AND SW ITCHING PNP SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS in m illim eters • High f T : f T = 4 0 0 M H z 2.8 ± 0.2 • Complementary to 2S C 3739


    OCR Scan     		PDF 2SA1464 2SA1464 1S955 2SC3739

    Untitled

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR 2SA1608 HIGH FREQUENCY AMPLIFIER AND SWITCHING PNP SILICON EPITAXIAL TRANSISTOR FEA TU RES PACKAGE DIMENSIONS in m illim e te rs • High fT : f T =400 MHz • Complementary to 2SC3739 2 . 110.1 1 .2 5 ± 0 .1 A B S O L U T E M AXIM UM R A T IN G S


    OCR Scan     		PDF 2SA1608 2SC3739

    Lem LT 300 - t

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR 2 S A 1 4 6 4 HIGH FREQUENCY AMPLIFIER AND SW ITCHING PNP SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATU RES P A C K A G E DIMENSIONS in m illim e te rs • H ig h f T : f T = 4 0 0 M H z 2-8±0.2 • C o m p lem en tary to 2 S C 3 7 3 9


    OCR Scan     		PDF 2SA1464 Lem LT 300 - t

    2SA1464

    Abstract: No abstract text available
    Text: SEC DATA SH EET SILICON TRANSISTOR ELECTRONDEVJCE 2 S A 1 4 6 4 HIGH FREQUENCY AMPLIFIER AND SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEA TU RES P A C K A G E D IM EN SIO N S in m illim eters • High f T : f T = 4 0 0 M Hz 2 .8 ± 0 2 • Com plem entary to 2 S C 3 7 3 9


    OCR Scan     		PDF 2SA1464 2SA1464

    BGY133

    Abstract: 65ZS 88-108 rf amplifier BGY132 vhf power module
    Text: Philips Semiconductors Product specification VHF amplifier modules BGY132; BGY133 FEA TUR ES D ES C R IPTIO N • Broadband V H F amplifiers The BGY132 and BGY133 are two stage amplifier modules. Each module comprises two NPN silicon planar transistor chips together with lumped-element


    OCR Scan     		PDF BGY132; BGY133 BGY132 BGY133 -SOT132B MSB029 7110fl2b 65ZS 88-108 rf amplifier vhf power module

    BGY133

    Abstract: BGY132 dcn4
    Text: Philips Semiconductors Product specification VHF amplifier modules BGY132; BGY133 FEA TUR ES D ES C R IPTIO N • Broadband V H F amplifiers The BGY132 and BGY133 are two stage amplifier modules. Each module comprises two NPN silicon planar transistor chips together with lumped-element


    OCR Scan     		PDF BGY132; BGY133 BGY132 BGY133 -SOT132B MSB029 7110fl2b dcn4

    TC-2112

    Abstract: ic ir 2112 1S955 2SA1608 2SC3739 y12 t TC2-112
    Text: DATA SHEET SILICON TRANSISTOR 2SA1608 HIGH FREQUENCY AMPLIFIER AND SWITCHING PNP SILICON EPITAXIALTRANSISTOR FEATURES PACKAGE DIMENSIONS in m illim e te rs • High f T : f T = 4 0 0 MHz • C om plem entary to 2SC3739 ABSOLUTE M AXIM UM RATINGS M axim um Voltages and Current T a = 25 °C


    OCR Scan     		PDF 2SA1608 2SC3739 -40INPUT TC-2112 1987M ic ir 2112 1S955 2SA1608 2SC3739 y12 t TC2-112

    se5020

    Abstract: marking R1L mot-10 2SA1464 2SC3739 2SC373 MECM
    Text: NEC j m *= rJ Ÿ T X '> I J =3 > b S ilic o n T ra n s is to r A 2SA1464 PNP i k ^ r s ] Ja J /; + y T iP iv 'J =i > h l > ï £> <£ 7 'm PNP Silicon Epitaxial Transistor High Frequency Amplifier and Switching ^ 0 / P A C K A G E DIMENSIONS Unit : mm # * / FEATURES


    OCR Scan     		PDF 2SA1464 2SC3739 se5020 marking R1L mot-10 2SA1464 2SC3739 2SC373 MECM

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


    OCR Scan     		PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350

    BFG55A

    Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
    Text: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors


    OCR Scan     		PDF LCD01 BFG55A philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60