TRANSISTOR Y12 Search Results

TRANSISTOR Y12 Result Highlights (6)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB

TRANSISTOR Y12 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Y22 SOT23 Abstract: MSB003 g21 Transistor PMBTH10 B22 base PMBTH81 transistor b11 switching transistor y11 transistor transistor G11 Text: DISCRETE SEMICONDUCTORS DATA SHEET PMBTH10 NPN 1 GHz general purpose switching transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz general purpose switching transistor	Original	PDF	PMBTH10 PMBTH10 PMBTH81. MSB003 Y22 SOT23 MSB003 g21 Transistor B22 base PMBTH81 transistor b11 switching transistor y11 transistor transistor G11
PMBTH10 Abstract: MSB003 PMBTH81 MRA566 Text: DISCRETE SEMICONDUCTORS DATA SHEET PMBTH81 PNP 1 GHz switching transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification PNP 1 GHz switching transistor FEATURES PINNING • Low cost	Original	PDF	PMBTH81 PMBTH81 PMBTH10. MSB003 PMBTH10 MSB003 MRA566
MBB400 Abstract: MSB003 BF747 transistor y21 y21 transistor marking code 604 SOT23 Text: DISCRETE SEMICONDUCTORS DATA SHEET BF747 NPN 1 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF747 FEATURES DESCRIPTION • Stable oscillator operation	Original	PDF	BF747 MSB003 MBB400 MSB003 BF747 transistor y21 y21 transistor marking code 604 SOT23
mbb400 Abstract: BF747 MSB003 Text: DISCRETE SEMICONDUCTORS DATA SHEET BF747 NPN 1 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF747 FEATURES DESCRIPTION • Stable oscillator operation	Original	PDF	BF747 MSB003 mbb400 BF747 MSB003
BF547 Abstract: MSB003 Text: DISCRETE SEMICONDUCTORS DATA SHEET BF547 NPN 1 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF547 FEATURES DESCRIPTION • Feedback capacitance typ. 1 pF	Original	PDF	BF547 MSB003 BF547 MSB003
B12 IC marking code Abstract: BF547 MSB003 Y22 SOT23 transistor y21 Text: DISCRETE SEMICONDUCTORS DATA SHEET BF547 NPN 1 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF547 FEATURES DESCRIPTION • Feedback capacitance typ. 1 pF	Original	PDF	BF547 MSB003 B12 IC marking code BF547 MSB003 Y22 SOT23 transistor y21
transistor s11 s12 s21 s22 Abstract: 5091-8350E MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT high power FET transistor s-parameters s11a1 s-parameter s11 s12 s21 Text: High-Frequency Transistor Primer Part II Noise and S-parameter Characterization This is the second part of the Hewlett-Packard High Frequency Transistor Primer series. It is an introduction to the noise and S-parameter characterization of GaAs FET and silicon bipolar	Original	PDF	5091-8350E 5968-1411E transistor s11 s12 s21 s22 5091-8350E MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT high power FET transistor s-parameters s11a1 s-parameter s11 s12 s21
RF transistors with s-parameters Abstract: MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor s11 s12 s21 s22 Hewlett-Packard transistor microwave Text: High-Frequency Transistor Primer Part II Noise and S-parameter Characterization This is the second part of the Hewlett-Packard High Frequency Transistor Primer series. It is an introduction to the noise and S-parameter characterization of GaAs FET and silicon bipolar	Original	PDF	5091-8350E 5968-1411E RF transistors with s-parameters MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor s11 s12 s21 s22 Hewlett-Packard transistor microwave
high power FET transistor s-parameters Abstract: transistor s11 s12 s21 s22 FET transistors with s-parameters transistor s parameters noise 2S12 circle of constant Noise MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT bipolar transistor ghz s-parameter s21a1 Text: High-Frequency Transistor Primer Part II Noise and S-parameter Characterization This is the second part of the Agilent Technologies High Frequency Transistor Primer series. It is an introduction to the noise and S-parameter characterization of GaAs FET and silicon bipolar	Original	PDF	5091-8350E 5968-1411E high power FET transistor s-parameters transistor s11 s12 s21 s22 FET transistors with s-parameters transistor s parameters noise 2S12 circle of constant Noise MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT bipolar transistor ghz s-parameter s21a1
BF747 Abstract: MBB400 sot23-4 marking a1 Text: BF747 NPN 1 GHz wideband transistor Rev. 03 — 27 July 2004 Product data sheet 1. Product profile 1.1 General description Low cost NPN transistor in a SOT23 plastic package. 1.2 Features • Stable oscillator operation ■ High current gain ■ Good thermal stability.	Original	PDF	BF747 BF747 MBB400 sot23-4 marking a1
bf547 philips Abstract: BF547 B12 IC marking code marking code 604 SOT23 Text: BF547 NPN 1 GHz wideband transistor Rev. 03 — 27 July 2004 Product data sheet 1. Product profile 1.1 General description Low cost NPN transistor in a SOT23 plastic package. 1.2 Features • ■ ■ ■ Feedback capacitance typically 1 pF Stable oscillator operation	Original	PDF	BF547 bf547 philips BF547 B12 IC marking code marking code 604 SOT23
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	PDF	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
BF547 Abstract: HS11 MSB003 PHE0 PHILIPS bf547 Text: Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF547 FEATURES DESCRIPTION • Feedback capacitance typ. 1 pF Low cost NPN transistor in a plastic SOT23 package. • Stable oscillator operation • High current gain • Good thermal stability.	OCR Scan	PDF	BF547 MSB003 BF547 HS11 MSB003 PHE0 PHILIPS bf547
sx3704 Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353 Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide	OCR Scan	PDF

Untitled Abstract: No abstract text available Text: Philips Semiconductors bbSBTBl 0025104 251 H A P X Product specification PNP 1 GHz switching transistor ^— ^ “ N AUER PHILIPS/DISCRETE FEATURES PINNING • Low cost PIN 1 The PMBTH81 is a general purpose silicon pnp transistor, encapsulated in a SOT23 plastic envelope. Its	OCR Scan	PDF	PMBTH81 PMBTH81 PMBTH10. MRA567
MBB400 Abstract: vqb 201 BF747 HS11 TRANSISTOR K 314 marking code 604 SOT23 top 256 yn Text: Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF747 FEATURES DESCRIPTION • Stable oscillator operation Low cost NPN transistor in a plastic SOT23 package. • High current gain • Good thermal stability. 2 1 APPLICATIONS • It is intended for VHF and UHF TV-tuner applications	OCR Scan	PDF	BF747 MBB400 vqb 201 BF747 HS11 TRANSISTOR K 314 marking code 604 SOT23 top 256 yn
bb412 Abstract: bb407 c 2026 y transistor Text: Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF747 FEATURES DESCRIPTION • Stable oscillator operation Low cost NPN transistor in a plastic SOT23 package. • High current gain • Good thermal stability. APPLICATIONS n 3 • It is intended for VHF and UHF TV-tuner applications	OCR Scan	PDF	BF747 MSB003 bb412 bb407 c 2026 y transistor
AFY42 Abstract: U120 103MHZ 400M GR22B Germanium Transistor Germanium mesa SZ2B Text: AFY42 PNP Mesa transistor for pre-stages, mixer and oscillator stages up to 900 MHz AFY 42 is a germanium PNP mesa transistor in a case 18 A 4 DIN 41 876 TO —72 . The leads are electrically insulated from the case. It is particularly suitable for use in	OCR Scan	PDF	AFY42 AFY42 60106-Y BIfi03 U120 103MHZ 400M GR22B Germanium Transistor Germanium mesa SZ2B
2SA1464 Abstract: 1S955 2SC3739 Text: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE 2S A 1464 HIGH FREQUENCY AMPLIFIER AND SW ITCHING PNP SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS in m illim eters • High f T : f T = 4 0 0 M H z 2.8 ± 0.2 • Complementary to 2S C 3739	OCR Scan	PDF	2SA1464 2SA1464 1S955 2SC3739
Untitled Abstract: No abstract text available Text: SILICON TRANSISTOR 2SA1608 HIGH FREQUENCY AMPLIFIER AND SWITCHING PNP SILICON EPITAXIAL TRANSISTOR FEA TU RES PACKAGE DIMENSIONS in m illim e te rs • High fT : f T =400 MHz • Complementary to 2SC3739 2 . 110.1 1 .2 5 ± 0 .1 A B S O L U T E M AXIM UM R A T IN G S	OCR Scan	PDF	2SA1608 2SC3739
AFY16 Abstract: Germanium Transistor 71lb 21b22 Text: AFY16 PNP Transistor for RF-application up to 900 MHz The A FY 16 is a germanium PNP RF mesa transistor in a case 18 A 4 DIN 41 876 TO-72 . The terminals are electrically insulated from the case. The AFY 16 is designed for use in pre-stages as well as in mixer and oscillator stages up to 900 MHz.	OCR Scan	PDF	AFY16 AFY16 18A4DIN41876 Q60106 f-200 Germanium Transistor 71lb 21b22
Lem LT 300 - t Abstract: No abstract text available Text: SILICON TRANSISTOR 2 S A 1 4 6 4 HIGH FREQUENCY AMPLIFIER AND SW ITCHING PNP SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATU RES P A C K A G E DIMENSIONS in m illim e te rs • H ig h f T : f T = 4 0 0 M H z 2-8±0.2 • C o m p lem en tary to 2 S C 3 7 3 9	OCR Scan	PDF	2SA1464 Lem LT 300 - t
2SA1464 Abstract: No abstract text available Text: SEC DATA SH EET SILICON TRANSISTOR ELECTRONDEVJCE 2 S A 1 4 6 4 HIGH FREQUENCY AMPLIFIER AND SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEA TU RES P A C K A G E D IM EN SIO N S in m illim eters • High f T : f T = 4 0 0 M Hz 2 .8 ± 0 2 • Com plem entary to 2 S C 3 7 3 9	OCR Scan	PDF	2SA1464 2SA1464
TRANSISTOR 2AW Abstract: KMA10 2B038 9521B AFY42 afy 13 mesa Text: AFY 42 Nicht für N e u e n tw ic k lu n g P N P -M e satran sisto r fü r V o r-, M isc h - und O szillatorstufen bis 900 M H z AFY 42 ist ein PNP-Germanium-Transistor in M esatechnik im Gehäuse 18 A 4 DIN 41876 T O -7 2 . Die Anschlüsse sind vom Gehäuse elektrisch isoliert. Der Transistor AFY 42 ist be	OCR Scan	PDF	Q60106-Y42 10MH7, TRANSISTOR 2AW KMA10 2B038 9521B AFY42 afy 13 mesa

TRANSISTOR Y12 Search Results

TRANSISTOR Y12 Result Highlights (6)

TRANSISTOR Y12 Datasheets Context Search

Y22 SOT23

PMBTH10

MBB400

mbb400

BF547

B12 IC marking code

transistor s11 s12 s21 s22

RF transistors with s-parameters

high power FET transistor s-parameters

BF747

bf547 philips

2N2222A 338

BF547

sx3704

Untitled

MBB400

bb412

AFY42

2SA1464

Untitled

AFY16

Lem LT 300 - t

2SA1464

TRANSISTOR 2AW