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    TRANSISTOR WZ Search Results

    TRANSISTOR WZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR WZ Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BLX95

    Abstract: BB313 L1042 blx95a TRIMMER capacitor 10-40 pf D45 TRANSISTOR philips 2222 trimmer IEC134 Miniature Ceramic Plate Capacitors 2222 philips 15Kg-cm
    Text: » • bbsa'm oas'ìbHi dhs N AMER PHILIPS/DISCRETE IAPX BLX95 A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the u.h.f. frequency range for supply voltages up to 28 V. The transistor is resistance stabilized and is


    OCR Scan     		BLX95 BLX95 BB313 L1042 blx95a TRIMMER capacitor 10-40 pf D45 TRANSISTOR philips 2222 trimmer IEC134 Miniature Ceramic Plate Capacitors 2222 philips 15Kg-cm PDF

    transistor tt 2222

    Abstract: TT 2222 npn TRIMMER capacitor 5-60 pF TT 2222 ic TT 2222 BLU99 4312 020 36642
    Text: bSE T> 711002b GGti27fi7 0^7 « P H I N BLU99 BLU99/SL PHILIPS INTERNATIONAL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in m obile radio transm itters in the u.h.f. band. The transistor is also very suitable fo r application in the 900 MHz m obile radio band.


    OCR Scan     		711002b GGb27fi7 BLU99 BLU99/SL OT122A) BLU99/SL OT122D) transistor tt 2222 TT 2222 npn TRIMMER capacitor 5-60 pF TT 2222 ic TT 2222 4312 020 36642 PDF

    Untitled

    Abstract: No abstract text available
    Text: MP4104 T O SH IB A TOSHIBA POWER TRANSISTOR MODULE SILICON NPN EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 4 IN 1 MP4104 INDUSTRIAL APPLICATIONS Unit in mm HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING. 25.2 ± 0 .2


    OCR Scan     		MP4104 PDF

    transistor tt 2222

    Abstract: BLY93A TT 2222 ic TT 2222 TT 2222 npn T-33-73 LY93A ROTA E Series IEC134 SOT-56
    Text: PHILIPS INTERNATIONAL MIE D B 711üaEb ÜQ2flQ0ci 1 B P H I N A J L B LLY93 Y93A M A IN T EN A N C E TYPE T~33~/3 V.H.F. POWER TRANSISTOR '\ N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industriar and military transmitters with a supply voltage of 28 V, The transistor is resistance stabilized. Every tran­


    OCR Scan     		LY93A BLY93A transistor tt 2222 BLY93A TT 2222 ic TT 2222 TT 2222 npn T-33-73 LY93A ROTA E Series IEC134 SOT-56 PDF

    DM74S189

    Abstract: DM74S189AN DM74S189N
    Text: DM54S189/DM74S189/DM54S189A/DM74S189A fjgx National ÆüàSemiconductor DM54S189/DM74S189 64-Bit 16 x 4 TRI-STATE RAM DM54S189A/DM74S189A High Speed 64-Bit TRI-STATE RAM General Description These 64-bit active-element memories are monolithic Schottky-clamped transistor-transistor logic (TTL) arrays or­


    OCR Scan     		DM54S189/DM74S189/DM54S189A/DM74S189A DM54S189/DM74S189 64-Bit DM54S189A/DM74S189A 64-Bit DM74S DM54S189/DM74S189/DM54S1 /DM74S189A TL/D/9232-5 DM74S189 DM74S189AN DM74S189N PDF

    NEC IC D 553 C

    Abstract: ic 723 cn NEC JAPAN 3504 transistor on 4409
    Text: DATA SHEET SILICON TRANSISTOR 2SC5180 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS • Low current consumption and high gain Units : mm i S 2ie 12 = 12 dB T Y P . @ Vce = 2 V, lc = 7 mA, f = 2 G H z


    OCR Scan     		2SC5180 2SC5180-- 2SC5180-T2 NEC IC D 553 C ic 723 cn NEC JAPAN 3504 transistor on 4409 PDF

    DM74S189

    Abstract: No abstract text available
    Text: DM54S189/DM7 4S189/DM54S189 A/DM7 4S189 A 53!] National dtjA Semiconductor DM54S189/DM74S189 64-Bit 16 x 4 TRI-STATE RAM DM54S189A/DM74S189A High Speed 64-Bit TRI-STATE RAM General Description These 64-bit active-element memories are monolithic Sctiottky-clamped transistor-transistor logic (TTL) arrays or­


    OCR Scan     		DM54S189/DM74S189 64-Bit DM54S189A/DM74S189A 64-Bit DM74S TL/D/9232-5 DM54S189 /DM74S189 1N3064. DM74S189 PDF

    TLP721

    Abstract: Fx10050 11-5B2 E67349 VDE0884 tlp721gb
    Text: T O SH IB A TLP721 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP721 OFFICE MACHINE HOUSEHOLD USE EQUIPMENT SOLID STATE RELAY SWITCHING POWER SUPPLY Unit in mm TI ir3 4 The TOSHIBA TLP721 consists of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic


    OCR Scan     		TLP721 E67349 E152349 UL1577 EN60065 EN60950 EN4330784 EN60950 Fx10050 11-5B2 E67349 VDE0884 tlp721gb PDF

    mdd 1051

    Abstract: circuit k 3683 916c Transistors marking WZ ke marking transistor transistor xl 3001 S9614
    Text: . . . . . . . .l: :;. . . . . . . . . . . . . . . . . .’. . . . . . . . MIIA3.1950W9B 12 Ne.rch 1970 SUPERSEDING MIL.T.1950W9A 12 hub? 19s9 MSLITARY SPfXfFffXTfON .-. SFADCONDUCTOR DEVICE, TRANSISTOR, PNP, GBfMi14NIUM, HIGH-FREQUENCY


    Original     		1950W9B 1950W9A GBfMi14NIUM, UG-491AW 91-6C S-1950W9B Force-11 s9614163) mdd 1051 circuit k 3683 916c Transistors marking WZ ke marking transistor transistor xl 3001 S9614 PDF

    marking code FV

    Abstract: Marking WZS
    Text: SIEMENS BCR 142W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit « Built in bias resistor R1=22ki2, Ft2=47k£2 Pin Configuration WZs t =B Q62702-C2289 2=E Package o Marking Ordering Code BCR 142W II CO Type


    OCR Scan     		22ki2, Q62702-C2289 OT-323 300ns; marking code FV Marking WZS PDF

    Q62702-C2289

    Abstract: No abstract text available
    Text: BCR 142W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ, R2=47kΩ Type Marking Ordering Code Pin Configuration BCR 142W WZs 1=B Q62702-C2289 Package 2=E 3=C SOT-323


    Original     		Q62702-C2289 OT-323 Nov-26-1996 Q62702-C2289 PDF

    B 647 AC transistor

    Abstract: 142 transistor Marking WZS
    Text: SIEMENS BCR 142 NPN Silicon Digital Transistor * Switching circuit, inverter, interface circuit, drver circuit • Built in bias resistor R i=22kii, R2=47ki2 Marking Ordering Code BCR 142 WZs Pin Configuration Q62702-C2259 1=B 2=E Package o II CO Type SOT-23


    OCR Scan     		22kii, 47ki2) Q62702-C2259 OT-23 300ps; B 647 AC transistor 142 transistor Marking WZS PDF

    C2259

    Abstract: Q62702-C2259
    Text: BCR 142 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, drver circuit • Built in bias resistor R1=22kΩ, R2=47kΩ Type Marking Ordering Code Pin Configuration BCR 142 WZs 1=B Q62702-C2259 Package 2=E 3=C SOT-23 Maximum Ratings


    Original     		Q62702-C2259 OT-23 Dec-18-1996 C2259 Q62702-C2259 PDF

    MARKING WZ

    Abstract: marking code 10 sot23 BCR142 BCR142F BCR142FL3 BCR142L3 BCR142T BCR142W SC75
    Text: BCR142. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ, R2 =47kΩ BCR142/F/L3 BCR142T/W C 3 R1 R2 1 B 2 E EHA07184 Type Marking Pin Configuration BCR142 WZs 1=B 2=E


    Original     		BCR142. BCR142/F/L3 BCR142T/W EHA07184 BCR142 BCR142F BCR142FL3 BCR142T BCR142W OT323 MARKING WZ marking code 10 sot23 BCR142 BCR142F BCR142FL3 BCR142L3 BCR142T BCR142W SC75 PDF

    BCR142

    Abstract: BCR142F BCR142FL3 BCR142L3 BCR142T BCR142W SC75
    Text: BCR142. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ, R2 =47kΩ BCR142/F/L3 BCR142T/W C 3 R1 R2 1 B 2 E EHA07184 Type Marking Pin Configuration BCR142 WZs 1=B 2=E


    Original     		BCR142. BCR142/F/L3 BCR142T/W EHA07184 BCR142 BCR142F BCR142FL3 BCR142T BCR142W OT323 BCR142 BCR142F BCR142FL3 BCR142L3 BCR142T BCR142W SC75 PDF

    MARKING WZ

    Abstract: BCR142 BCR142F BCR142FL3 BCR142L3 BCR142T BCR142W SC75 marking code TS
    Text: BCR142. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ, R2 =47kΩ BCR142/F/L3 BCR142T/W C 3 R1 R2 1 B 2 E EHA07184 Type Marking Pin Configuration BCR142 WZs 1=B 2=E


    Original     		BCR142. BCR142/F/L3 BCR142T/W EHA07184 BCR142 BCR142F BCR142FL3 BCR142T BCR142W OT323 MARKING WZ BCR142 BCR142F BCR142FL3 BCR142L3 BCR142T BCR142W SC75 marking code TS PDF

    Untitled

    Abstract: No abstract text available
    Text: S IE M E N S BCR 142W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor Ri=22ki2, R2=47kfl ire □ CÜ J S E Ordering Code Pin Configuration WZs Q62702-C2289 1 =B Package H CO ro


    OCR Scan     		22ki2, 47kfl) Q62702-C2289 OT-323 Q120750 012Q751 PDF

    VSO05561

    Abstract: No abstract text available
    Text: BCR 142W NPN Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ, R 2=47kΩ 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR 142W WZs Pin Configuration 1=B 2=E Package


    Original     		VSO05561 EHA07184 OT-323 Oct-19-1999 VSO05561 PDF

    142T

    Abstract: SC-75
    Text: BCR 142T NPN Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ, R 2=47kΩ 2 C 3 1 R1 VPS05996 R2 1 2 B E EHA07184 Type Marking BCR 142T WZs Pin Configuration 1=B 2=E Package


    Original     		VPS05996 EHA07184 SC-75 Sep-29-1999 142T SC-75 PDF

    BCR142T

    Abstract: SC75
    Text: BCR142T NPN Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=22k, R 2=47k 2 C 3 1 R1 VPS05996 R2 1 2 B E EHA07184 Type Marking BCR142T WZs Pin Configuration 1=B 2=E Package 3=C SC75


    Original     		BCR142T VPS05996 EHA07184 Nov-29-2001 BCR142T SC75 PDF

    BCR142W

    Abstract: VSO05561
    Text: BCR142W NPN Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=22k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR142W WZs Pin Configuration 1=B 2=E Package 3=C SOT323


    Original     		BCR142W VSO05561 EHA07184 OT323 Jul-13-2001 BCR142W VSO05561 PDF

    BCR142W

    Abstract: VSO05561
    Text: BCR142W NPN Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=22k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR142W WZs Pin Configuration 1=B 2=E Package 3=C SOT323


    Original     		BCR142W VSO05561 EHA07184 OT323 Nov-29-2001 BCR142W VSO05561 PDF

    BCR142T

    Abstract: SC75
    Text: BCR142T NPN Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=22k, R 2=47k 2 C 3 1 R1 VPS05996 R2 1 2 B E EHA07184 Type Marking BCR142T WZs Pin Configuration 1=B 2=E Package 3=C SC75


    Original     		BCR142T VPS05996 EHA07184 Jul-13-2001 BCR142T SC75 PDF

    BCR142

    Abstract: No abstract text available
    Text: BCR142 NPN Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=22k, R 2=47k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR142 WZs Pin Configuration 1=B 2=E Package 3=C SOT23


    Original     		BCR142 VPS05161 EHA07184 Jul-13-2001 BCR142 PDF