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    TRANSISTOR WY Search Results

    TRANSISTOR WY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR WY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KB817-M

    Abstract: E225308
    Text: PHOTOCOUPLER Part Number: KB817-M GENERAL PURPOSE GENERAL PURPOSE HIGH ISOLATION VOLTAGE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE SINGLE TRANSISTOR TYPE PHOTOCOUPLER SERIES PHOTOCOUPLER SERIES FEATURES FEATURES 1.High isolation voltage between input and output Viso=5000 Vrms


    Original     		PDF KB817-M KB817-M E225308 100pcs/each AD1557 E225308

    2SC 8550

    Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
    Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4


    Original     		PDF 3SK309 3SK317 3SK318 BB101C BB102C BB301C BB302C BB304C BB305C BB501C 2SC 8550 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545

    BCR139

    Abstract: BCR139F BCR139L3 BCR139T SC75
    Text: BCR139. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ BCR139/F/L3 BCR139T C 3 R1 1 B 2 E EHA07264 Type Marking Pin Configuration BCR139 WYs 1=B 2=E 3=C - - - SOT23


    Original     		PDF BCR139. BCR139/F/L3 BCR139T EHA07264 BCR139 BCR139F BCR139L3 Sep-03-2003 BCR139 BCR139F BCR139L3 BCR139T SC75

    marking 2x

    Abstract: BCR108T BCR139 BCR139F BCR139L3 BCR139T E6327 SC75
    Text: BCR139. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22 kΩ BCR139F/L3 BCR139T C 3 R1 1 B 2 E EHA07264 Type Marking Pin Configuration Package BCR139F WYs 1=B 2=E 3=C -


    Original     		PDF BCR139. BCR139F/L3 BCR139T EHA07264 BCR139F BCR139L3 marking 2x BCR108T BCR139 BCR139F BCR139L3 BCR139T E6327 SC75

    Untitled

    Abstract: No abstract text available
    Text: BCR139. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22 kΩ BCR139F/L3 BCR139T C 3 R1 1 B 2 E EHA07264 Type Marking Pin Configuration Package BCR139F WYs 1=B 2=E 3=C -


    Original     		PDF BCR139. BCR139F/L3 BCR139T EHA07264 BCR139F BCR139L3 dissipationBCR139F, BCR139L3, BCR139T,

    Untitled

    Abstract: No abstract text available
    Text: BCR139. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ BCR139/F/L3 BCR139T C 3 R1 1 B 2 E EHA07264 Type Marking Pin Configuration BCR139 WYs 1=B 2=E 3=C - - - SOT23


    Original     		PDF BCR139. BCR139/F/L3 BCR139T EHA07264 BCR139 BCR139F BCR139L3 Sep-03-2003

    BCR139

    Abstract: No abstract text available
    Text: BCR139 NPN Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=22k 2 C 3 1 VPS05161 R1 1 2 B E EHA07264 Type Marking BCR139 WYs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings


    Original     		PDF BCR139 VPS05161 EHA07264 Jul-13-2001 BCR139

    Untitled

    Abstract: No abstract text available
    Text: BCR139 NPN Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=22k 2 C 3 1 R1 1 2 B E VPS05161 EHA07264 Type Marking BCR139 WYs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings


    Original     		PDF BCR139 VPS05161 EHA07264 Nov-29-2001

    Untitled

    Abstract: No abstract text available
    Text: BCR 139 NPN Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=22k 2 C 3 1 VPS05161 R1 1 2 B E EHA07264 Type Marking BCR 139 WYs Pin Configuration 1=B 2=E Package 3=C SOT-23 Maximum Ratings


    Original     		PDF VPS05161 EHA07264 OT-23 Oct-22-1999

    HMXR-5001

    Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
    Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog


    Original     		PDF

    transistor marking WY

    Abstract: 2SC2859 WY transistor sot23 WY .wy transistor marking wo sot-23
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES 2SC2859 Pb Lead-free z Power dissipation：PC=150mW. APPLICATIONS z Audio frequency general purpose amplifier applications. SOT-23 ORDERING INFORMATION Type No. 2SC2859


    Original     		PDF 2SC2859 150mW. OT-23 BL/SSSTC100 transistor marking WY 2SC2859 WY transistor sot23 WY .wy transistor marking wo sot-23

    WY transistor

    Abstract: transistor marking WY KTA2015 KTC4076W Y MARKING NPN Silicon Epitaxial Planar Transistor .wy transistor
    Text: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z Excellent HFE Linearity. z Complementary to KTA2015 z Power dissipation. PC=100mW KTC4076W Pb Lead-free APPLICATIONS z General purpose and switching application.


    Original     		PDF KTC4076W KTA2015 100mW) OT-323 BL/SSSTF049 WY transistor transistor marking WY KTA2015 KTC4076W Y MARKING NPN Silicon Epitaxial Planar Transistor .wy transistor

    WY transistor

    Abstract: sot23 WY transistor marking WY .wy transistor WG SOT 23 KTC3876 marking wo sot-23 TRANSISTOR MARKING CODE WO MARKING WY transistor wy
    Text: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z Complementary To KTA1505. z Excellent HFE Linearity. z Low noise. KTC3876 Pb Lead-free APPLICATIONS z General purpose application, switching application. SOT-23


    Original     		PDF KTC3876 KTA1505. OT-23 BL/SSSTC057 WY transistor sot23 WY transistor marking WY .wy transistor WG SOT 23 KTC3876 marking wo sot-23 TRANSISTOR MARKING CODE WO MARKING WY transistor wy

    Untitled

    Abstract: No abstract text available
    Text: PHOTOCOUPLER Part Number: KB816 GENERAL PURPOSE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE HIGH COLLECTOR VOLTAGE PHOTOCOUPLER SERIES FEATURES 1.High isolation voltage between input and output Viso=5000 Vrms . 2.High Collector-emitter voltage (Vceo=70V).


    Original     		PDF KB816 KB816 E225308. AUG/29/2008 100pcs/each DSAD1545

    Untitled

    Abstract: No abstract text available
    Text: PHOTOCOUPLER Part Number: KB817-M GENERAL PURPOSE GENERAL PURPOSE HIGH ISOLATION ISOLATION VOLTAGE HIGH VOLTAGE SINGLE TRANSISTOR SINGLE TRANSISTORTYPE TYPE PHOTOCOUPLER SERIES PHOTOCOUPLER SERIES FEATURES 1.High isolation voltage between input and output Viso=5000 Vrms


    Original     		PDF KB817-M KB817-M E225308 thickn0009 100pcs/each DSAD1557

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE m DbE J> 86D 01798 D Lb53T31 0Dm03L. 3 T - 31 ^ 6 * BLX91A A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe


    OCR Scan     		PDF Lb53T31 0Dm03L. BLX91A D01404S 7Z68928

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF

    TRANSISTOR BC 206 PNP

    Abstract: Transistor BhD Transistor BhD 15 bc 201 transistor A 1908 transistor SA 5881 eltec R/transistor bc 813
    Text: Transistor arrays MDC03 NPN transistor electrical characteristics unless otherwise noted, Ta = 25°C Parameter Symbol Min Collector-to-base breakdown voltage b v cbo 10 V lc = 50 jiA Collector-to-emitter breakdown voltage b v ceo 10 V lc = 1 mA HA V C b = 10 V


    OCR Scan     		PDF MDC03 TRANSISTOR BC 206 PNP Transistor BhD Transistor BhD 15 bc 201 transistor A 1908 transistor SA 5881 eltec R/transistor bc 813

    dumper

    Abstract: 2SB1318 diode dumper bu500
    Text: NEC D ES C R IP TIO N PNP SICICON TRANSISTOR 2SB1318 The 2SB1318 is a darlington transistor built-in dumper diode at E-C. PACKAG E D IM E N S IO N S in millimeters inches It is suitable for use to operate from IC w ithout predriver, such as hammer driver.


    OCR Scan     		PDF 2SB1318 2SB1318 VCC--40V dumper diode dumper bu500

    MJE370

    Abstract: MJE520 MOTOROLA
    Text: MOTOROLA SC X S T R S /R 1SE D I F b3b?254 Ciaa53H7 2 | MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM-POWER PNP SILICON TRANSISTOR 3 AMPERE POWER TRANSISTOR PNP SILICON . . . designed for use in general-purpose amplifiers and switching circuits. Recommended for use in 5 to 10 W att audio amplifiers uti­


    OCR Scan     		PDF Ciaa53H7 MJE520 MJE370 MJE520 MOTOROLA

    Untitled

    Abstract: No abstract text available
    Text: Product Specification Philips Semiconductors PowerMOS transistor BUK545-60A/B Logic level GENERAL DESCRIPTION PINNING-SOT186 PIN SYMBOL 0 O > N-channel enhancement mode logic level fieid-effect power


    OCR Scan     		PDF BUK545-60A/B BUK545

    Untitled

    Abstract: No abstract text available
    Text: HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR TYPE ps2562L-1-2 4 MULTI OPTOCOUPLER SERIES FEATURES_ DESCRIPTION_ • HIGH ISOLATION VOLTAGE • HIGH CURRENT TRANSFER RATIO CTR: 2000% TYP • HIGH SPEED SWITCHING tr, tf = 100 is TYP


    OCR Scan     		PDF ps2562L-1-2 PS2562-1, PS2562L-1, PS25621 PS2562L-1and PS2562-4 PS2562L-1 PS2562L-2 PS2562L-4