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    TRANSISTOR WR2 Search Results

    TRANSISTOR WR2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR WR2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MPSA44H NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR „ FEATURES * Collector-Emitter Voltage:* VCEO=400V * Collector Current up to 300mA „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free MPSA44HL-AB3-R MPSA44HG-AB3-R


    Original     		PDF MPSA44H 300mA MPSA44HL-AB3-R MPSA44HG-AB3-R MPSA44HL-T92-B MPSA44HG-T92-B MPSA44HL-T92-K MPSA44HG-T92-K MPSA44HL-T92-R MPSA44HG-T92-R

    BFR93AW

    Abstract: B 1359 marking A3 amplifier 449
    Text: BFR93AW Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band amplifier up to GHz range. Features D High power gain D High transition frequency D Low noise figure 1 13 652 2 13 570 3 Marking: WR2


    Original     		PDF BFR93AW D-74025 07-Nov-97 BFR93AW B 1359 marking A3 amplifier 449

    A1489 TRANSISTOR

    Abstract: No abstract text available
    Text: BFR93A/BFR93AR/BFR93AW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band amplifier up to GHz range. Features D High power gain D High transition frequency D Low noise figure


    Original     		PDF BFR93A/BFR93AR/BFR93AW BFR93A BFR93AR BFR93AW D-74025 20-Jan-99 A1489 TRANSISTOR

    ZS 633

    Abstract: BFR93A application board MARKING WR2 SOT-23 B 1359 BFR93A BFR93AR BFR93AW
    Text: BFR93A/BFR93AR/BFR93AW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band amplifier up to GHz range. Features D High power gain D High transition frequency D Low noise figure


    Original     		PDF BFR93A/BFR93AR/BFR93AW BFR93A BFR93AR BFR93AW D-74025 20-Jan-99 ZS 633 BFR93A application board MARKING WR2 SOT-23 B 1359

    BFR93A

    Abstract: BFR93A application board ZS 1052 AC BFR93AR BFR93AW transistor BFR93A MARKING WR2 SOT-23
    Text: BFR93A/BFR93AR/BFR93AW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band amplifier up to GHz range. Features D High power gain D High transition frequency D Low noise figure


    Original     		PDF BFR93A/BFR93AR/BFR93AW BFR93A BFR93AR BFR93AW 20-Jan-99 BFR93A/BFR93design D-74025 BFR93A application board ZS 1052 AC transistor BFR93A MARKING WR2 SOT-23

    BFR93AW

    Abstract: BFR93A application board transistor BFR93A ZS 1052 AC BFR93A BFR93AR BFR93A VISHAY ZS 633
    Text: BFR93A/BFR93AR/BFR93AW Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band amplifier up to GHz range. Features D High power gain D High transition frequency D Low noise figure


    Original     		PDF BFR93A/BFR93AR/BFR93AW BFR93A BFR93AR BFR93AW D-74025 20-Jan-99 BFR93A application board transistor BFR93A ZS 1052 AC BFR93A VISHAY ZS 633

    transistor wr2

    Abstract: No abstract text available
    Text: <^£.mL-dondu.ctoi ^Pi ., {Jnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 PMD16K100 Silicon NPN Darlingtion Power Transistor DESCRIPTION • High DC current gain • Collector-Emitter Sustaining Voltage-


    Original     		PDF PMD16K100 PMD17K100 100mA transistor wr2

    sot-23 MARKING 636

    Abstract: ZS 1052 AC ZS 633 BFR93a
    Text: BFR93A / BFR93AR / BFR93AW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT-23 Features • High power gain • High transition frequency • Low noise figure 2 3 1 SOT-23 Applications Wide band amplifier up to GHz range. 3 Mechanical Data


    Original     		PDF BFR93A BFR93AR BFR93AW OT-23 OT-23 BFR93AW sot-23 MARKING 636 ZS 1052 AC ZS 633

    BFR93A

    Abstract: No abstract text available
    Text: BFR93A / BFR93AR / BFR93AW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT-23 Features • High power gain • High transition frequency • Low noise figure 2 3 1 SOT-23 Applications Wide band amplifier up to GHz range. 3 Mechanical Data


    Original     		PDF BFR93A BFR93AR BFR93AW OT-23 OT-23 BFR93AW

    MARKING CODE 618 SOT23

    Abstract: MARKING WR2 SOT-23 BFR93AW-GS08 BFR93AG MARKINGWR2SOT-23
    Text: Not for new design, this product will be obsoleted soon BFR93A/BFR93AR/BFR93AW Vishay Semiconductors Silicon NPN Planar RF Transistor 1 Features • • • • • SOT23 High power gain High transition frequency e3 Low noise figure Lead Pb -free component


    Original     		PDF BFR93A/BFR93AR/BFR93AW 2002/95/EC 2002/96/EC OT323 BFR93A BFR93AR 18-Jul-08 MARKING CODE 618 SOT23 MARKING WR2 SOT-23 BFR93AW-GS08 BFR93AG MARKINGWR2SOT-23

    BFR93AW-GS08

    Abstract: 732 774 047 B 1359 BFR93A application board BFR93AW S parameters of BFR93AR GHz transistor BFR93A BFR93AR 682 SOT23 MARKING 85035
    Text: BFR93A/BFR93AR/BFR93AW Vishay Semiconductors Silicon NPN Planar RF Transistor 1 Features • • • • • SOT23 High power gain High transition frequency e3 Low noise figure Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC


    Original     		PDF BFR93A/BFR93AR/BFR93AW 2002/95/EC 2002/96/EC OT323 BFR93A BFR93AR BFR93ed 08-Apr-05 BFR93AW-GS08 732 774 047 B 1359 BFR93A application board BFR93AW S parameters of BFR93AR GHz transistor BFR93A BFR93AR 682 SOT23 MARKING 85035

    TRANSISTOR mcr 100-8

    Abstract: AFC8503S
    Text: Programmable Controller FP-X0 Conforming to Low Voltage and EMC Directive New Multi-functional & Economical PLC Body equipped with combined relay and transistor output L30R Super-high processing speed 80 ns/step 0 to 3000 steps for ST command Number of I/O points


    Original     		PDF RS485 1-axis/20 2-axis/20 L40MR, L60MR L40MR L60MR TRANSISTOR mcr 100-8 AFC8503S

    MARKING WR2 SOT-23

    Abstract: ZS 633
    Text: BFR93A / BFR93AR / BFR93AW Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT-23 Features • • • • • High power gain High transition frequency e3 Low noise figure Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC


    Original     		PDF BFR93A BFR93AR BFR93AW 2002/95/EC 2002/96/EC OT-23 OT-323 OT-23 MARKING WR2 SOT-23 ZS 633

    Untitled

    Abstract: No abstract text available
    Text: BFR93A / BFR93AR / BFR93AW Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT-23 Features • • • • • High power gain High transition frequency e3 Low noise figure Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC


    Original     		PDF BFR93A BFR93AR BFR93AW 2002/95/EC 2002/96/EC OT-23 OT-323 OT-23

    coreless transformer Technology

    Abstract: No abstract text available
    Text: February 2010 Application Note AN-EVAL 2x8-ISO1H811G-1 Coreless Transformer Isolated High Side Switch Evaluation Board 2 x 8 Channel 0.6A with ISO1H811G Published by Infineon Technologies AG http://www.infineon.com Power Management & Drives N e v e r s t o p


    Original     		PDF 2x8-ISO1H811G-1 ISO1H811G 2x8-ISO1H811G coreless transformer Technology

    Untitled

    Abstract: No abstract text available
    Text: February 2010 Application Note AN-EVAL 2x8-ISO1H815G-1 Coreless Transformer Isolated High Side Switch Evaluation Board 2 x 8 Channel 1.2A with ISO1H815G Published by Infineon Technologies AG http://www.infineon.com Power Management & Drives N e v e r s t o p


    Original     		PDF 2x8-ISO1H815G-1 ISO1H815G 2x8-ISO1H815G

    OMF125

    Abstract: zener WR1 ISO1H811G omf125 1a OMF125 7A C166 Coreless pcb transformer P-DSO-36 ISO1H811
    Text: February 2010 Application Note AN-EVAL 2x8-ISO1H811G-1 Coreless Transformer Isolated High Side Switch Evaluation Board 2 x 8 Channel 0.6A with ISO1H811G Published by Infineon Technologies AG http://www.infineon.com Power Management & Drives N e v e r s t o p


    Original     		PDF 2x8-ISO1H811G-1 ISO1H811G 2x8-ISO1H811G OMF125 zener WR1 ISO1H811G omf125 1a OMF125 7A C166 Coreless pcb transformer P-DSO-36 ISO1H811

    omf125 10A

    Abstract: zener WR1 OMF125 fet 500v 14A zener protect C166 ISO1H815G micro processor controlled SCR
    Text: February 2010 Application Note AN-EVAL 2x8-ISO1H815G-1 Coreless Transformer Isolated High Side Switch Evaluation Board 2 x 8 Channel 1.2A with ISO1H815G Published by Infineon Technologies AG http://www.infineon.com Power Management & Drives N e v e r s t o p


    Original     		PDF 2x8-ISO1H815G-1 ISO1H815G 2x8-ISO1H815G omf125 10A zener WR1 OMF125 fet 500v 14A zener protect C166 ISO1H815G micro processor controlled SCR

    transistor wr2

    Abstract: No abstract text available
    Text: TOSHIBA RN4606 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) R N A fi fl f i Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. 2 .8 + 0.2 - 0.3 + 0.2 1 . 6 - 0.1


    OCR Scan     		PDF RN4606 961001EAA2' transistor wr2

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA RN4905 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) R U I Q O R SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. U nit in mm 2 . 1± 0.1 1.25 ± 0.1 Including Two Devices in US6 (U ltra Super Mini Type with 6


    OCR Scan     		PDF RN4905

    mica capacitor

    Abstract: Silver mica capacitor 2SK1739 variable resistor 10w mica capacitors ci 7403 transistor wr2 mica variable capacitor C28T
    Text: TOSHIBA 2SK1739 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 739 RF PO W ER MOS FET for UHF TV BROADCAST TRANSMITTER Output Power Po^90W M in. Efficiency 7 d ~ 50% (Typ.) Frequency f = 770MHz Push-P ull Structure Package M A X IM U M RATINGS (Tc = 25°C)


    OCR Scan     		PDF 2SK1739 770MHz --60V, 220pF 4700pF 200pF 100juF, mica capacitor Silver mica capacitor 2SK1739 variable resistor 10w mica capacitors ci 7403 transistor wr2 mica variable capacitor C28T

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SA1507 PNP EPITAXIAL SILICON TR AN SISTO R S SWITCHING TRANSISTOR APPLICAITONS ‘ C o lo r T V a u d io o u tp u t, c o n v e rte rs , in v e rte rs . FEATURES ‘ H igh b re a k d o w n v o lta g e ‘ L a rg e c u rre n t c a p a c ita n c e . ‘ H ig h -s p e e d s w itc h in g


    OCR Scan     		PDF 2SA1507 QW-R204-009 -R204-009

    Untitled

    Abstract: No abstract text available
    Text: +5 V Fixed, Adjustable Micropower Linear Voltage Regulators ANALOG DEVICES ADM663/ADM666 FEATURES 5 V Fixed or +1.3 V to +16 V Adjustable Low Power CMOS: 12 pA max Quiescent Current 40 mA Output Current Current Limiting Pin Compatible with MAX663/666 +2 V to +16.5 V Operating Range


    OCR Scan     		PDF ADM663/ADM666 MAX663/666 ADM666 ADM663/ADM666

    transistor w2a 40

    Abstract: xw4f 4500 microcomputer
    Text: MITSUBISHI MICROCOMPUTERS 4551 Group SINGLE-CHIP 4-BIT CMOS M ICROCOMPUTER DESCRIPTION • LCD control circuit Segment Common o u tp u


    OCR Scan     		PDF 14-bit M34551E8-XXXFP, M34551E8FP PCA7414 transistor w2a 40 xw4f 4500 microcomputer