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    TRANSISTOR WM Search Results

    TRANSISTOR WM Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR WM Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTA124EET1 This new digital transistor is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network


    Original     		PDF LDTA124EET1 SC-89

    transistor j6

    Abstract: J122 transistor J6 transistor transistor j122 j48 transistor transistor 1015 J122 J122 npn PH2731-75L PACIFIC 1015
    Text: an = AMP wmDanv 5 = Radar Pulsed Power Transistor, 75W, 300~s Pulse, 10% Duty PI-f2731 -75L 2.7 - 3.1 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Effkiency Interdigitated Geometry Diffused Emitter Ballasting Resistors


    Original     		PDF PI-f2731 PH2731-75L transistor j6 J122 transistor J6 transistor transistor j122 j48 transistor transistor 1015 J122 J122 npn PH2731-75L PACIFIC 1015

    Untitled

    Abstract: No abstract text available
    Text: BUD620 wmmt Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • Very low dynamic saturation • HIGH SPEED technology • Very low operating temperature • Planar passivation • Optimized RBSOA


    OCR Scan     		PDF BUD620 BUD620-SMD 20-Jan-99 BUD620

    transistor WMM

    Abstract: No abstract text available
    Text: BUD744 wMm? Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • Very low dynamic saturation • HIGH SPEED technology • Very low operating temperature • Planar passivation • Optimized RBSOA


    OCR Scan     		PDF BUD744 BUD744 BUD744-SMD 20-Jan-99 transistor WMM

    Untitled

    Abstract: No abstract text available
    Text: BUD600 wmmt Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • Very low dynamic saturation • HIGH SPEED technology • Very low operating temperature • Planar passivation • Optimized RBSOA


    OCR Scan     		PDF BUD600 BUD600-SMD 20-Jan-99

    Untitled

    Abstract: No abstract text available
    Text: BUD630 wmmt Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • • • • HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation


    OCR Scan     		PDF BUD630 BUD630-SMD 20-Jan-99 BUD630

    Untitled

    Abstract: No abstract text available
    Text: BUD725D wmmt Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Monolithic integrated C-E-free-wheel diode • Very low switching losses • • Simple-sWitch-Off Transistor SWOT • Very low dynamic saturation HIGH SPEED technology


    OCR Scan     		PDF BUD725D BUD725D 14-Jul-98

    transistor smd yw

    Abstract: No abstract text available
    Text: BUD616A wmmt Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • • • • HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation


    OCR Scan     		PDF BUD616A BUD616A-SMD 20-Jan-99 BUD616A transistor smd yw

    Untitled

    Abstract: No abstract text available
    Text: BUD7312 wmm t Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • • • • HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation


    OCR Scan     		PDF BUD7312 BUD7312 22-Jul-99

    A65 smd transistor

    Abstract: transistor smd za
    Text: BUD700D wmmt Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Monolithic integrated C-E-free-wheel diode • • • • • Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate •


    OCR Scan     		PDF BUD700D BUD700D 20-Jan-99 A65 smd transistor transistor smd za

    transistor SMD wm

    Abstract: No abstract text available
    Text: BUD636A wm m t Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • Very low dynamic saturation • HIGH SPEED technology • Very low operating temperature • Planar passivation • Optimized RBSOA


    OCR Scan     		PDF BUD636A BUD636A 20-Jan-99 transistor SMD wm

    Untitled

    Abstract: No abstract text available
    Text: BUF646 • BUF646A wmmt Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • HIGH SPEED technology • Planar passivation • 100 kHz switching rate • Very low switching losses • Very low dynamic saturation


    OCR Scan     		PDF BUF646 BUF646A 20-Jan-99

    cd 1191 cb

    Abstract: CD 1691 CB
    Text: wm m t BFP67/BFP67R/BFP67W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain per­


    OCR Scan     		PDF BFP67/BFP67R/BFP67W BFP67 BFP67R BFP67W 20-Jan-99 cd 1191 cb CD 1691 CB

    transistor marking WV2

    Abstract: No abstract text available
    Text: wmmt B FQ67/B FQ67 R/B FQ67W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated


    OCR Scan     		PDF FQ67/B FQ67W BFQ67 BFQ67R BFQ67W 20-Jan-99 transistor marking WV2

    Untitled

    Abstract: No abstract text available
    Text: BUD742 wmmt Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • Very low dynamic saturation • HIGH SPEED technology • Very low operating temperature • Planar passivation • Optimized RB S 0 A


    OCR Scan     		PDF BUD742 BUD742 BUD742-SMD 20-Jan-99

    2N2369A

    Abstract: 2n2369a philips TU-T2
    Text: N AMER PHILIPS/DISCRETE bTE bbSBTBl DDEÔDT? ?Db WM APX 11 2N2369A | i SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a TO-18 metal envelope primarily intended for high-speed saturated switching and high frequency amplifier applications. QUICK REFERENCE DATA


    OCR Scan     		PDF bbS3T31 2N2369A 10fiF 2N2369A 2n2369a philips TU-T2

    Untitled

    Abstract: No abstract text available
    Text: A N AMER PHILIPS/DISCRETE □bE D WM bb53T31 00150b! ? • MRB12350YR MAINTENANCE TYPE for new design use M RB11350Y X ' 33 - I S' PULSED MICROWAVE POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates only in


    OCR Scan     		PDF bb53T31 00150b! MRB12350YR RB11350Y)

    BUK445-100A

    Abstract: 1E05 BUK445 BUK445-100B
    Text: PHILIPS INTERNATIONAL bSE D WM 7110flSb O O b a W Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF 7110flSb BUK445-1OOA/B -SOT186 BUK445 -100A -100B BUK445-100A 1E05 BUK445-100B

    BUK445-100A

    Abstract: BUK445-100B BT diode BUK445
    Text: PHILIPS INT ERNATIONAL bSE D WM 7110flSb O O b a W Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched M ode Power Supplies


    OCR Scan     		PDF BUK445-100A/B -SOT186 BUK445-100A BUK445-100B BT diode BUK445

    Silicon Transistor Corp

    Abstract: 2950 transistor
    Text: SILICON TRANSISTOR CORP SbE J> WM Ô2S4022 DOGG^fi fll? « S T C SILICON TRANSISTOR CORPORATION I Katrina Road Chelmsford, Massachusetts 01824 Telephone: 508-256-3321 FAX: 508-250-1046 A POWERHOUSE 500 V o lts 0.3 Ohms TECHNICAL DATA SHEET ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF 2S4022 SNF40503 BreM0-078 ST102 MIL-S-19500 Silicon Transistor Corp 2950 transistor

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors bbS3^31 DD315^I1 3bT WMAPX Product specification PNP 4 GHz wideband transistor BFQ54T N A PIER PHILIPS/DISCRETE b^E J> PINNING DESCRIPTION PNP transistor in a plastic SOT37 package. PIN 1 base It is primarily intended for use in MATV and microwave amplifiers


    OCR Scan     		PDF DD315 BFQ54T BFQ34T. 0031ST4 BB339

    2SC4867

    Abstract: 16T MARKING 2SC4871 FH201 ZS21 TA-1315 1hz OUTPUT 7CJE
    Text: Ordering number:ENN6117 NPN Epitaxial Planar Silicon Composite Transistor FH201 SAÈÈYOI VCO OSC Circuit Applications Features Package Dimensions • C om p osite type w ith a buffer transistor 2 S C 4 8 7 1 and a oscillator transistor (2 S C 4 8 6 7 ) contained in


    OCR Scan     		PDF ENN6117 FH201 2SC4871) 2SC4867) FH20I 2SC4871 2SC4867, FH201] 7117D7L 0D544b7 2SC4867 16T MARKING FH201 ZS21 TA-1315 1hz OUTPUT 7CJE

    2N3054

    Abstract: C4125 4392n 3054 booc power transistors dc-27 transistor 2n3054
    Text: 2 N 3054 NPN Power transistor for AF amplifier and switching applications 2 N 3 0 5 4 is a single-diffused N P N silicon transistor in a T O -6 6 case. The collector is electrically connected to the case. The transistor 2 N 3 0 5 4 is particularly suitable


    OCR Scan     		PDF 2N3054 Q62702-U Q62901-B Q62901-B11 200mA 160mA 120mA 100mA C4125 4392n 3054 booc power transistors dc-27 transistor 2n3054

    transistor D 4515

    Abstract: 100-P BUK556-60A A1730
    Text: PHILIPS INTERNATIONAL bSE J> B 7110fl2b □□b42Sb Philips Semiconductors PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.


    OCR Scan     		PDF BUK556-60A PINNING-T0220AB -ID/100 transistor D 4515 100-P A1730