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Text: S-5715 Series www.sii-ic.com HIGH-SPEED / MIDDLE-SPEED LOW CURRENT CONSUMPTION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC Rev.2.0_00 Seiko Instruments Inc., 2011 The S-5715 Series, developed by CMOS technology, is a high-accuracy Hall IC that operates with high-speed/middle-speed
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Text: S-5715 Series www.sii-ic.com HIGH-SPEED / MIDDLE-SPEED LOW CURRENT CONSUMPTION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC Rev.2.1_00 Seiko Instruments Inc., 2011 The S-5715 Series, developed by CMOS technology, is a high-accuracy Hall IC that operates with high-speed / middlespeed detection and low current consumption.
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Text: S-5715 Series www.sii-ic.com HIGH-SPEED / MIDDLE-SPEED LOW CURRENT CONSUMPTION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC Rev.2.2_00 Seiko Instruments Inc., 2011 The S-5715 Series, developed by CMOS technology, is a high-accuracy Hall IC that operates with high-speed / middlespeed detection and low current consumption.
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S-5715ENDL1-M3T1U
Abstract: marking TAW S-5715DCSL1-M3T1U POLE S-5715CCSL1-I4T1U S-5715DCDL1-M3T1U S-5715DNDL1-M3T1U
Text: S-5715 Series www.sii-ic.com HIGH-SPEED / MIDDLE-SPEED LOW CURRENT CONSUMPTION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC Rev.2.2_00 Seiko Instruments Inc., 2011 The S-5715 Series, developed by CMOS technology, is a high-accuracy Hall IC that operates with high-speed / middlespeed detection and low current consumption.
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S-5715
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S-5715ENDL1-M3T1U
marking TAW
S-5715DCSL1-M3T1U
POLE
S-5715CCSL1-I4T1U
S-5715DCDL1-M3T1U
S-5715DNDL1-M3T1U
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Untitled
Abstract: No abstract text available
Text: S-5715 Series www.sii-ic.com HIGH-SPEED / MIDDLE-SPEED LOW CURRENT CONSUMPTION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC Rev.2.3_00 Seiko Instruments Inc., 2011-2012 The S-5715 Series, developed by CMOS technology, is a high-accuracy Hall IC that operates with high-speed / middlespeed detection and low current consumption.
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S-5715
Abstract: No abstract text available
Text: S-5715 Series www.sii-ic.com HIGH-SPEED / MIDDLE-SPEED LOW CURRENT CONSUMPTION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC Rev.2.3_00 Seiko Instruments Inc., 2011-2012 The S-5715 Series, developed by CMOS technology, is a high-accuracy Hall IC that operates with high-speed / middlespeed detection and low current consumption.
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hall mARKING CODE g
Abstract: No abstract text available
Text: S-5712 Series www.sii-ic.com LOW VOLTAGE OPERATION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC Rev.4.4_00 Seiko Instruments Inc., 2010-2013 The S-5712 Series, developed by CMOS technology, is a high-accuracy Hall IC that operates at a low voltage and low
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hall mARKING CODE g
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TRANSISTOR D 1902
Abstract: No abstract text available
Text: S-5724 Series www.sii-ic.com LOW VOLTAGE OPERATION HIGH-SPEED BIPOLAR HALL EFFECT LATCH Rev.1.0_00 Seiko Instruments Inc., 2012 The S-5724 Series, developed by CMOS technology, is a high-accuracy Hall IC that operates at a low voltage with a highsensitivity, a high-speed detection and low current consumption.
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TRANSISTOR D 1902
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S-5712CCDL1-I4T1U
Abstract: S-5712CCDH1-I4T1U S-5712ACSH2-I4T1U 35VTA
Text: S-5712 Series www.sii-ic.com LOW VOLTAGE OPERATION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC Rev.4.3_00 Seiko Instruments Inc., 2010-2013 The S-5712 Series, developed by CMOS technology, is a high-accuracy Hall IC that operates at a low voltage and low
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S-5712CCDL1-I4T1U
S-5712CCDH1-I4T1U
S-5712ACSH2-I4T1U
35VTA
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Text: S-5724 Series www.sii-ic.com LOW VOLTAGE OPERATION HIGH-SPEED BIPOLAR HALL EFFECT LATCH Rev.1.0_00 Seiko Instruments Inc., 2012 The S-5724 Series, developed by CMOS technology, is a high-accuracy Hall IC that operates at a low voltage with a highsensitivity, a high-speed detection and low current consumption.
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Text: S-5724 Series www.sii-ic.com LOW VOLTAGE OPERATION HIGH-SPEED BIPOLAR HALL EFFECT LATCH Rev.1.0_00 Seiko Instruments Inc., 2012 The S-5724 Series, developed by CMOS technology, is a high-accuracy Hall IC that operates at a low voltage with a highsensitivity, a high-speed detection and low current consumption.
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S-5712ACDL
Abstract: No abstract text available
Text: S-5712 Series www.sii-ic.com LOW VOLTAGE OPERATION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC Rev.4.2_01 Seiko Instruments Inc., 2010-2012 The S-5712 Series, developed by CMOS technology, is a high-accuracy Hall IC that operates at a low voltage and low
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Abstract: No abstract text available
Text: S-5725 Series HIGH-SPEED BIPOLAR HALL EFFECT LATCH www.sii-ic.com Rev.2.1_00 Seiko Instruments Inc., 2011-2012 The S-5725 Series, developed by CMOS technology, is a high-accuracy Hall IC that operates with a high-sensitivity, a highspeed detection and low current consumption.
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transistor marking code
Abstract: No abstract text available
Text: S-5725 Series HIGH-SPEED BIPOLAR HALL EFFECT LATCH www.sii-ic.com Rev.2.1_00 Seiko Instruments Inc., 2011-2012 The S-5725 Series, developed by CMOS technology, is a high-accuracy Hall IC that operates with a high-sensitivity, a highspeed detection and low current consumption.
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Abstract: No abstract text available
Text: S-5712 Series www.sii-ic.com LOW VOLTAGE OPERATION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC Rev.4.2_00 Seiko Instruments Inc., 2010-2012 The S-5712 Series, developed by CMOS technology, is a high-accuracy Hall IC that operates at a low voltage and low
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Untitled
Abstract: No abstract text available
Text: S-5724 Series www.sii-ic.com LOW VOLTAGE OPERATION HIGH-SPEED BIPOLAR HALL EFFECT LATCH Rev.1.2_00 Seiko Instruments Inc., 2012-2013 The S-5724 Series, developed by CMOS technology, is a high-accuracy Hall IC that operates at a low voltage with a highsensitivity, a high-speed detection and low current consumption.
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Untitled
Abstract: No abstract text available
Text: S-5725 Series HIGH-SPEED BIPOLAR HALL EFFECT LATCH www.sii-ic.com Rev.2.1_00 Seiko Instruments Inc., 2011-2012 The S-5725 Series, developed by CMOS technology, is a high-accuracy Hall IC that operates with a high-sensitivity, a highspeed detection and low current consumption.
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Untitled
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Text: S IE M E N S Silicon N Channel M O SFET Tetrode BF 998 Features • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 G H z Type Marking Ordering Code tape and reel Pin Configuration 1 2 4 3 B F 998
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62702-F1129
TheT07304
fi235bQ5
D1E174E
Q1517M3
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Untitled
Abstract: No abstract text available
Text: • bh53131 00E3T77 STT « A P X N A PIER PHIL IPS/D ISCR ETE BST120 b7E D P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in SOT89 envelope and intended for use in relay, high-speed and line-transformer drivers, using SMD technology.
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bh53131
00E3T77
BST120
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MRB12350YR
Abstract: IEC134 MRB11350Y 67A MARKING
Text: A N AMER PHILIPS/DISCRETE m bhS3T31 00150bl 7 • OLE D MRB12350YR MAINTENANCE TYPE for new design use MRB11350Y X ' 33 - I S' PULSED MICROWAVE POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates only in
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MRB11350Y)
bh53T31
00150bl
MRB12350YR
IEC134)
IEC134
MRB11350Y
67A MARKING
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RTC146
Abstract: IEC134 LKE21004R LTE21009R
Text: N AMER GbE P H ILIP S /D IS C R E TE D • I bhS3T31 D014141 MAINTENANCE TYPE for new design use LTE21009R T ■ LKE21004R T - iz - o ± r MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor for use in a common-emitter class-A linear power amplifier up to 2,1 GHz.
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LTE21009R)
D014141
LKE21004R
FO-53,
IEC134)
RTC146
IEC134
LKE21004R
LTE21009R
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mosfet marking code AL sot-23
Abstract: transistor marking code 24 TRANSISTOR MARKING 24 24 marking transistor transistor marking code AL transistor B 722 MARKING CODE 24 TRANSISTOR Amplifier "marking code" D code marking 2M sot-23 MOSFET S690T
Text: TELEFUNKEN EL ECT RONI C 61C D • fiTBDDTb 0 0 0 5 4 5 b S 690 T trKLKFdDKlKIKl electronic Creative Technologies 4 ■ AL 66 _ r ~ 3 i- L i Silicon NPN Planar RF Transistor Applications: RF amplifier up to GHz range specially for wide band antenna amplifier
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569-GS
mosfet marking code AL sot-23
transistor marking code 24
TRANSISTOR MARKING 24
24 marking transistor
transistor marking code AL
transistor B 722
MARKING CODE 24 TRANSISTOR
Amplifier "marking code" D
code marking 2M sot-23 MOSFET
S690T
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Transistor BFR 96
Abstract: TRANSISTOR BC 157 TRANSISTOR BC 158 transistor K 3596 TRANSISTOR as BC 158 BFR96S transistor bc 238 b silicon npn planar rf transistor sot 143 transistor B 722 Telefunken u 237
Text: TELEFUNKEN ELECTRONIC file D • fiSSOO^b 0 0 0 5 3 0 3 T BFR 96 S electronic Creative Technologies Silicon NPN Planar RF Transistor Applications; RF-amplifier up to GHz range specially for wide band antenna amplifier Features: • High power gain • Low noise figures
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ft-11
569-GS
000s154
hal66
if-11
Transistor BFR 96
TRANSISTOR BC 157
TRANSISTOR BC 158
transistor K 3596
TRANSISTOR as BC 158
BFR96S
transistor bc 238 b
silicon npn planar rf transistor sot 143
transistor B 722
Telefunken u 237
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bf679t
Abstract: transistor bf 679 Transistor BF 679 t BF679 BF 679 bc 569 BH Rf transistor
Text: c TELEFUNKEN ELECTRONIC fllC D a^SDD^b 00G542E 7 • A L 6 Û S 679 T • BF 679 T TtllLtltFOJMIXilMl electronic Creative Technologies _ t - 3 / - / r Silicon PNP RF Transistor Applications: Gain controlled UHF/VHF input stages
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00G542E
569-GS
bf679t
transistor bf 679
Transistor BF 679 t
BF679
BF 679
bc 569
BH Rf transistor
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