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    TRANSISTOR WIG Search Results

    TRANSISTOR WIG Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR WIG Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    shockley diode

    Abstract: shockley shockley diode application diode shockley shockley diode datasheet electrical bell working principle transistor a 1941 Electron Research Germanium rectifier nj TRANSISTOR
    Text: Bell Labs celebrates 50 years of the Transistor The Invention Team Dr. John Bardeen, Dr. Walter Brattain, and Dr. William Shockley discovered the transistor effect and developed the first device in December, 1947, while the three were members of the technical staff at Bell Laboratories in Murray Hill, NJ. They were awarded


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    HMXR-5001

    Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
    Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog


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    capacitor MKL

    Abstract: L7E transistor AN00042 TP97036
    Text: APPLICATION NOTE Failure Mechanisms of the Line Output Transistor AN00042 Philips Semiconductors TP97036.2/W97 Philips Semiconductors *EMPYVI 1IGLERMWQW SJ XLI 0MRI 3YXTYX 8VERWMWXSV Application Note AN00042 Abstract 7SQI TSWWMFPI JEMPYVI QIGLERMWQW SJ XLI PMRI SYXTYX XVERWMWXSV MR EYXSW]RG QSRMXSVW EVI HMWGYWWIH 1IEWYVIQIRXW


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    PDF AN00042 TP97036 2/W97 capacitor MKL L7E transistor AN00042

    transistor b722

    Abstract: transistor b722 p B722 p B722 TRANSISTOR DATA b772 to 126 transistor b722 b N E C B772 b722 transistor pnp b722 b772 p
    Text: B772 TO-126 Plastic-Encapsulate Transistors Transistor PNP FEATURES TO-126 Power dissipation o P CM :1.25 W (Tamb=25 C) Collector current I CM :-3 A 1.EMITTER Collector-base voltage 2.COLLECTOR V (BR)CBO :-40 V 3.BASE 1 2 3 ELECTRICAL CHARACTERISTICS o (Tamb=25 C unless otherwise specified)


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    PDF O-126 O-126 transistor b722 transistor b722 p B722 p B722 TRANSISTOR DATA b772 to 126 transistor b722 b N E C B772 b722 transistor pnp b722 b772 p

    603 transistor npn

    Abstract: NPN transistor Electronic ballast design a common emitter amplifier with a voltage transistor Electronic ballast electronic ballast with npn transistor dc Electronic Load transistor R1A DN-52 constant current electronic load electronic load
    Text: DN-52 Design Note Adjustable Electronic Load for Low Voltage DC Applications *Operates down to 2.5V by Bill Andreycak and John Wiggenhorn Testing power supply regulation over a specified output current range is greatly simplified with the use of an adjustable electronic load. Load current


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    PDF DN-52 D44H11 0A/80V) O-220 E5301 603 transistor npn NPN transistor Electronic ballast design a common emitter amplifier with a voltage transistor Electronic ballast electronic ballast with npn transistor dc Electronic Load transistor R1A DN-52 constant current electronic load electronic load

    UC39432

    Abstract: optocoupler pnp or npn optocoupler pnp Schematic of 100K digital potentiometer D44H11 TIP32B electronic schematic Andreycak
    Text: DN-52 Design Note Adjustable Electronic Load for Low Voltage DC Applications *Operates down to 2.5V by Bill Andreycak and John Wiggenhorn Testing power supply regulation over a specified output current range is greatly simplified with the use of an adjustable electronic load. Load current


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    PDF DN-52 UC39432 optocoupler pnp or npn optocoupler pnp Schematic of 100K digital potentiometer D44H11 TIP32B electronic schematic Andreycak

    MT 6236

    Abstract: Transistor WIG 10NO2Z woy transistor AN569 zener diod MARKING S04 diod zener
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document bv MMSF1ONO22D DATA DesignerSTM Data Sheet - I I Medium Power Surface Mount Products TMOS Single N-Channel with Monolithic Zener ESD Protected Gate EZFETSTM are an advanced series of power MOSFETS which


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    PDF MMSF1ONO22D 2W609 MT 6236 Transistor WIG 10NO2Z woy transistor AN569 zener diod MARKING S04 diod zener

    D7N02Z

    Abstract: tO-219 AN569 MMDF7N02Z MMDF7N02ZR2 TRANSISTOR MARKING DM W
    Text: MOTOROLA SEMICONDUCTOR — Advance TECHNICAL Order this document by MMDP7N02~D DATA Information I MMDF7N02Z I Medium Power Surface Mount Products TMOS Dual N-Channel with Monolithic Zener ESD Protected Gate EZFETS’M are an advanced series of power MOSFETS which


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    PDF MMDP7N02 MMDF7N02Z 30W7G2140 D7N02Z tO-219 AN569 MMDF7N02ZR2 TRANSISTOR MARKING DM W

    MFW 17 SOT23

    Abstract: MFW SOT23 MFW 17 Transistor mfw 17 369A-13 AN569 MTD2N40E MFW diode MFW SOT mfw sot-23
    Text: MOTOROLA SEMICONDUCTOR w TECHNICAL Order this document by MTD2N40WD DATA Designer5TM Data Sheet TMOS E-FET TM . . High Energy Power FET DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche and switch efficiently. This


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    PDF MTD2N40WD 2W609 MFW 17 SOT23 MFW SOT23 MFW 17 Transistor mfw 17 369A-13 AN569 MTD2N40E MFW diode MFW SOT mfw sot-23

    Y4 series surface mount transistor

    Abstract: 100L AN569 MMDF3C03HD MMDF3C03HDR2 carrier recovery
    Text: MOTOROLA s SEMICONDUCTOR TECHNICAL Advance Order this document by MMDF3C03HD/D DATA Information MMDF3C03HD Medium Power Surface Mount Products I Complementary TMOS Field Effect Transistors MiniMOS devices are an advanced series of power MOSFETS which utilize Motorola’s High Cell Density HDTMOS process.


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    PDF MMDF3C03HD/D MMDF3C03HD W1-2447 MMDF3C03HDID Y4 series surface mount transistor 100L AN569 MMDF3C03HD MMDF3C03HDR2 carrier recovery

    AN569

    Abstract: MMDF6N03HD MMDF6N03HDR2
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order thisdocument by MMDF6N03HD/D DATA E Advance /formation Medium Power Surface Mount Products TMOS Dual N-ChanneI FieBdEffect Transistors Dual HDTMOS devices are an advanced series of power MOSFETS which utilize Motorola’s


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    PDF MMDF6N03HD/D Box54W, 30H7G21W Ok7741846 AN569 MMDF6N03HD MMDF6N03HDR2

    14315* transistor

    Abstract: 100CC AN569 MMSF3P02HD MMSF3P02HDR2 power mosfet 7515 WFs transistor
    Text: MOTOROLA SEMICONDUCTOR — — TECHNICAL Order this document by MMSF3P02HD/D DATA DesignerkTM Data Sheet Medium Power Surface Mount Products E TMOS Single P-Channel Field Effect Wansistors MiniMOSTM devices are an advanced series of power MOSFETS which utilize Motorola’s High Cell Density HDTMOS process.


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    PDF MMSF3P02HD/D 14315* transistor 100CC AN569 MMSF3P02HD MMSF3P02HDR2 power mosfet 7515 WFs transistor

    cadmium sulfide photoresistor

    Abstract: heat sensor with fan cooling using LM741 circuit diagram of incubator ACD0831 DC FAN CONTROLLED TEMPERATURE USING IC LM741 circuit diagram of pipe climbing robot hair dryer PID diagram incubator project book basic stamp program with adc0831 qrb1114
    Text: Process Control Student Guide VERSION 1.0 WARRANTY Parallax Inc. warrants its products against defects in materials and workmanship for a period of 90 days from receipt of product. If you discover a defect, Parallax Inc. will, at its option, repair or replace the merchandise, or refund the


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    PDF ULN2003A cadmium sulfide photoresistor heat sensor with fan cooling using LM741 circuit diagram of incubator ACD0831 DC FAN CONTROLLED TEMPERATURE USING IC LM741 circuit diagram of pipe climbing robot hair dryer PID diagram incubator project book basic stamp program with adc0831 qrb1114

    TB6591FL

    Abstract: diode bridge 4pin If06
    Text: TOSHIBA TB6591FL Toshiba Bi-CMOS Integrated Circuit Silicon Monolithic Preliminary TB6591FL DC motor driver TB6591FL is a motor driver IC for DC which uses LDMOS with low ON-resistor for output transistors. 1 constant current control type bridge dirver circuit and 3 constant


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    PDF TB6591FL TB6591FL QON48-P-0707-0 diode bridge 4pin If06

    toshiba h-bridge driver

    Abstract: No abstract text available
    Text: TB6591FL/FLG Toshiba Bi-CMOS Integrated Circuit Silicon Monolithic TB6591FL/FLG 7channel bridge-driver for DC motor TB6591FL is a motor driver IC for DC which uses LDMOS with low ON-resistor for output transistors. 1 constant current control type bridge dirver circuit and 3 constant


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    PDF TB6591FL/FLG TB6591FL QON48â toshiba h-bridge driver

    Untitled

    Abstract: No abstract text available
    Text: I Ordering number: EN 1207A 2SC3277 i NPN Triple Diffused Planar Silicon Transistor SM YO 400V/10A Switching Regulator Applications Features . High breakdown voltage, high current. . Wige ASO. . Fast switching speed. Absolute Maxima Ratings at Ta=25°C Collector-toBase Voltage


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    PDF 2SC3277 00V/10A 300us, DQ2D077 L-200M

    TIS43

    Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
    Text: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.


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    PDF 2S301 BS9300-C-598 2S305 BS9300-C-366 2S307 2S322 CV7396 BS9300-C-396 CV7647 BS9300-C-647 TIS43 equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent

    M57962AL

    Abstract: applications of ujt IGBT with V-I characteristics UJT APPLICATION TDS340A PC817 ujt transistor am503s IGBT 10 A igbt high power
    Text: 2000 * m 5 gj IGBT Miihfc B p A -^ i f c t f c l * # 200331 tt# Ä . * à iitfc T Î* IÇ Â Æ + W a * # « , $ f t i 3 IGBT & £ £ # £ : ! * 3B# tfTC, 1 31 la & ä fc # jR S J I f r f IGBT (Insulated Gate Bipolar Transistor) ;êlÉJ BIT MOSFET älj&ÖilSi'ä'


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    PDF M57962AL TDS340A, AM503S A6302iEi M57962AL, M57962AL) applications of ujt IGBT with V-I characteristics UJT APPLICATION TDS340A PC817 ujt transistor IGBT 10 A igbt high power

    diode t25 4 L9

    Abstract: B85 diode
    Text: 2 D I3 0 M -0 5 0 3 oa ' < r7 - Y : Outline Drawings s7 > P X 9 :£ i * 3 . - J i * POWER TRANSISTOR MODULE • t t f t : Features • filfth F E H igh DC C u rre n t Gain • H igh S peed S w itc h in g : A p p lic a tio n s • ^ • * # « » G eneral P urpose Inverter


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    PDF 19S24- diode t25 4 L9 B85 diode

    UC39432

    Abstract: 603 transistor npn D44H11 NPN transistor Electronic ballast
    Text: h- UNITRODE Design Note Adjustable Electronic Load for Low Voltage DC Applications ‘Operates down to 2.5V by Bill Andreycak and John Wiggenhorn Testing power supply regulation over a specified output current range is greatly simplified with the use of an adjustable electronic load. Load current


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    3 phase motor control

    Abstract: AN3861SA inductive sensor oscillator circuit PANASONIC AN38 panasonic cylinder unit 560PF DG12 forward and reverse control of 3 phase motor vb14
    Text: Panasonic ICs for Motor A N 3 8 6 1 S A Sensor-less Motor Drive 1C for VTR Movie Cylinder • Overview The AN 3861SA is a sensor-less motor drive IC for V TR movie cylinder. It uses both sensor-less and sine wave drive, thus excellent for low-noise applications.


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    PDF AN3861SA AN3861SA 32-pin 3 phase motor control inductive sensor oscillator circuit PANASONIC AN38 panasonic cylinder unit 560PF DG12 forward and reverse control of 3 phase motor vb14

    Horizontal Transistor TT 2246

    Abstract: ca3080 spice vogt transformer 406 69 CA3098 equivalent ICL8038 applications advantages disadvantages gi 9544 class d amplifier schematic hip4080 STR 6459 SEVEN PIN IC TRANSISTOR FOR POWER SUPPLY siemens transistor manual BUF601
    Text: New High Speed Linear Products VIDEO OP AMPS AND BUFFERS HFA1105 LOW POWER VIDEO OP AMP HFA1115 I LOW POWER PROGRAMMABLE GAIN VIDEO BUFFER [ AnswerFAX DOCUMENT # 3395 AnswerFAX DOCUMENT * 3606 • -3dB Bandwidth Ay * + 2 . 350MHz


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    PDF HFA1105 HFA1115 350MHz 225MHz 000V/ps 50MHz. Horizontal Transistor TT 2246 ca3080 spice vogt transformer 406 69 CA3098 equivalent ICL8038 applications advantages disadvantages gi 9544 class d amplifier schematic hip4080 STR 6459 SEVEN PIN IC TRANSISTOR FOR POWER SUPPLY siemens transistor manual BUF601

    2SK1001

    Abstract: 2SC2712GR Capacitor AM 15V172 3SK126 3SK195 KIA2074F KIA2093F variable capacitor AM fet cross reference
    Text: KEC SEMICONDUCTOR KOREA ELECTRONICS CO.,LTD. TECHNICAL DATA KIA2074F BIPOLAR LINEAR INTEGRATED CIRCUIT ADVANCED R F PRO CESSO R KIA2074F is an advanced R F processor for car tuners. An FM front end and AM tu n er are internal parts are drastically reduced.


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    PDF KIA2074F KIA2074F KIA2093F 108dBjwV. 2SK1001) 2SC2712GR 2SK1001 Capacitor AM 15V172 3SK126 3SK195 variable capacitor AM fet cross reference

    2SK1001

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA KIA2074F b ip o l a r l in e a r in t e g r a t e d c ir c u it ADVANCED RF PROCESSOR KIA2074F is an advanced RF processor for car tuners. An FM front end and AM tuner are internal parts are drastically reduced. Car tuners with both FM/AM require only the KIA2093F


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    PDF KIA2074F KIA2074F KIA2093F 2SK1001) 2SC2712GR 022/iF 2SK1001