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    TRANSISTOR WAF Search Results

    TRANSISTOR WAF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR WAF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz

    Abstract: S11A1 Glossary of Microwave Transistor Terminology
    Text: High-Frequency Transistor Primer Part I Silicon Bipolar Electrical Characteristics Table of Contents I. Transistor Structure Types . A. Bipolar .


    Original     		PDF 5966-3085E high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz S11A1 Glossary of Microwave Transistor Terminology

    T8550

    Abstract: T8050 transistor t8050 transistor NPN TO-92 2W
    Text: Preliminary Specification RCL Semiconductors Ltd. T8050 NPN Medium Power Transistor GENERAL DESCRIPTION T8050 is NPN medium power transistor fabricated on the epitaxial silicon wafers. It is complimentary to T8550. It can be widely used in audio amplifiers and switching.


    Original     		PDF T8050 T8050 T8550. T8550 To-92 100mA 800mA 800mA, T8550 transistor t8050 transistor NPN TO-92 2W

    high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz

    Abstract: Glossary of Microwave Transistor Terminology
    Text: High-Frequency Transistor Primer Part I Silicon Bipolar Electrical Characteristics Table of Contents I. Transistor Structure Types . A. Bipolar .


    Original     		PDF 5966-3085E high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz Glossary of Microwave Transistor Terminology

    IC 7555 datasheet

    Abstract: NE 7555 200E 400E 500E HFA3102 HFA3102B96 NF50 UPA102G
    Text: HFA3102 Data Sheet May 2003 FN3635.4 Dual Long-Tailed Pair Transistor Array Features The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array


    Original     		PDF HFA3102 FN3635 HFA3102 10GHz) 10GHz IC 7555 datasheet NE 7555 200E 400E 500E HFA3102B96 NF50 UPA102G

    T3904

    Abstract: T3906
    Text: Preliminary Specification RCL Semiconductors Ltd. T3904 NPN Switching Transistor GENERAL DESCRIPTION . T3904 is NPN small power and high frequency transistor fabricated on the epitaxial silicon wafers. It is complimentary to T3906. It can be widely used in amplifiers and switching.


    Original     		PDF T3904 T3904 T3906. T3906 T3906

    pspice

    Abstract: NE 7555 500E 800E HFA3102 HFA3102B HFA3102B96 NF50 UPA102G UHF-1
    Text: HFA3102 Data Sheet August 1996 File Number 3635.2 Dual Long-Tailed Pair Transistor Array Features The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array


    Original     		PDF HFA3102 HFA3102 10GHz) 10GHz pspice NE 7555 500E 800E HFA3102B HFA3102B96 NF50 UPA102G UHF-1

    10GHz oscillator

    Abstract: Dual Long-Tailed Pair Transistor Array m14 transistor TRANSISTOR 10GHZ HFA3102 UPA102G TRANSISTOR ARRAY transistor array high frequency "pin to pin" HFA3102B
    Text: HFA3102 TM Data Sheet August 1996 File Number 3635.2 Dual Long-Tailed Pair Transistor Array Features The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array


    Original     		PDF HFA3102 HFA3102 10GHz) 10GHz 1-888-INTERSIL 10GHz oscillator Dual Long-Tailed Pair Transistor Array m14 transistor TRANSISTOR 10GHZ UPA102G TRANSISTOR ARRAY transistor array high frequency "pin to pin" HFA3102B

    H3101B

    Abstract: HFA3101B HFA3101 HFA3101B96 HFA3101BZ HFA3101BZ96 STD-020C UPA101 gilbert cell sum IC 7812 pin configuration
    Text: HFA3101 Data Sheet September 2004 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil’s bonded wafer UHF-1 SOI process, this array achieves very high fT 10GHz while


    Original     		PDF HFA3101 HFA3101 10GHz) FN3663 UPA101 H3101B HFA3101B HFA3101B96 HFA3101BZ HFA3101BZ96 STD-020C UPA101 gilbert cell sum IC 7812 pin configuration

    T8550

    Abstract: T8050 transistor t8050
    Text: Preliminary Specification RCL Semiconductors Ltd. T8050-1 NPN Medium Power Transistor GENERAL DESCRIPTION T8050-1 is NPN medium power transistor fabricated on the epitaxial silicon wafers. It is complimentary to T8550-1. It can be widely used in audio amplifiers and switching.


    Original     		PDF T8050-1 T8050-1 T8550-1. T8550-1 800mA 800mA, T8550 T8050 transistor t8050

    smd transistor 304

    Abstract: ISL73096RHVX AN9315 "PNP Transistor array" fabrication GAMMA Radiation Detector TRANSISTOR PNP 5GHz 5962F0721801V9A ISL73096RH smd transistor pinout pnp 8 transistor array
    Text: ISL73096RH Data Sheet March 29, 2007 Radiation Hardened Ultra High Frequency NPN-PNP Transistor Array The ISL73096RH is a radiation hardened transistor array consisting of three NPN transistors and two PNP transistors on a common substrate. One of our bonded wafer,


    Original     		PDF ISL73096RH ISL73096RH FN6475 smd transistor 304 ISL73096RHVX AN9315 "PNP Transistor array" fabrication GAMMA Radiation Detector TRANSISTOR PNP 5GHz 5962F0721801V9A smd transistor pinout pnp 8 transistor array

    HFA3102BZ96

    Abstract: NE 7555 HFA3102 HFA3102B96 HFA3102BZ NF50 UPA102G
    Text: HFA3102 Data Sheet July 14, 2005 FN3635.5 Dual Long-Tailed Pair Transistor Array Features The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array


    Original     		PDF HFA3102 FN3635 HFA3102 10GHz) 10GHz HFA3102BZ96 NE 7555 HFA3102B96 HFA3102BZ NF50 UPA102G

    HFA3101

    Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ 920mhz
    Text: HFA3101 Data Sheet File Number 3663.4 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil’s bonded wafer UHF-1 SOI process, this array achieves very high fT 10GHz while


    Original     		PDF HFA3101 HFA3101 10GHz) RF NPN POWER TRANSISTOR C 10-12 GHZ 920mhz

    transistor npn c 9012

    Abstract: HFA3101BZ 5GHz band pass filter
    Text: HFA3101 Data Sheet September 2004 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil’s bonded wafer UHF-1 SOI process, this array achieves very high fT 10GHz while


    Original     		PDF HFA3101 HFA3101 10GHz) FN3663 UPA101 transistor npn c 9012 HFA3101BZ 5GHz band pass filter

    data sheet transistor 9018 NPN

    Abstract: NE 7555 500E 800E HFA3102 HFA3102B HFA3102B96 NF50 UPA102G 12E-09
    Text: HFA3102 TM Data Sheet September 2001 File Number 3635.3 Dual Long-Tailed Pair Transistor Array Features The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array


    Original     		PDF HFA3102 HFA3102 10GHz) 10GHz CH-1009 data sheet transistor 9018 NPN NE 7555 500E 800E HFA3102B HFA3102B96 NF50 UPA102G 12E-09

    high power FET transistor s-parameters

    Abstract: high frequency transistor ga as fet ATP-1054 bipolar transistor ghz s-parameter NF50 RF Transistor s-parameter vacuum tube amplifier DC bias of gaas FET
    Text: High-Frequency Transistor Primer Part IV GaAs FET Characteristics Table of Contents I. II. III. IV. V. VI. VII. Basic Terminology . Transistor Structure .


    Original     		PDF ATP-1054, 5963-2025E 5966-0779E high power FET transistor s-parameters high frequency transistor ga as fet ATP-1054 bipolar transistor ghz s-parameter NF50 RF Transistor s-parameter vacuum tube amplifier DC bias of gaas FET

    kf 8715

    Abstract: 900mhz frequency generator Ic 9430 UPA101 transistors equivalent 9012 5GHz band pass filter 500E H3101B HFA3101B HFA3101B96
    Text: HFA3101 Data Sheet September 1998 File Number 3663.4 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil’s bonded wafer UHF-1 SOI process, this array achieves very high fT 10GHz while


    Original     		PDF HFA3101 HFA3101 10GHz) 10GHz kf 8715 900mhz frequency generator Ic 9430 UPA101 transistors equivalent 9012 5GHz band pass filter 500E H3101B HFA3101B HFA3101B96

    Untitled

    Abstract: No abstract text available
    Text: MAGX-000025-150000 GaN on SiC HEMT Power Transistor 150 W, 1-2500 MHz Rev. V1 Features •       MAGX-000025-150000 GaN on SiC Transistor Technology Broadband Unmatched Transistor Common-Source Configuration +50 V Typical Operation Class AB Operation


    Original     		PDF MAGX-000025-150000 MAGX-000025-150000 GX0025-150

    high frequency transistor ga as fet

    Abstract: ATP-1054 bipolar transistor s-parameter high power FET transistor s-parameters Transistor s-parameter
    Text: High-Frequency Transistor Primer Part IV GaAs FET Characteristics Table of Contents I. II. III. IV. V. VI. VII. Basic Terminology . Transistor Structure .


    Original     		PDF ATP-1054, 5963-2025E 5966-0779E high frequency transistor ga as fet ATP-1054 bipolar transistor s-parameter high power FET transistor s-parameters Transistor s-parameter

    HFA3101

    Abstract: 9700E fiber optic FM Modulator gilbert cell sum 8906 ic FM Modulator 2GHz 500E H3101B HFA3101B gilbert cell differential pair
    Text: HFA3101 TM Data Sheet September 1998 File Number 3663.4 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil’s bonded wafer UHF-1 SOI process, this array achieves very high fT 10GHz while


    Original     		PDF HFA3101 HFA3101 10GHz) 10GHz 9700E fiber optic FM Modulator gilbert cell sum 8906 ic FM Modulator 2GHz 500E H3101B HFA3101B gilbert cell differential pair

    CF001-03

    Abstract: CFA0103A low noise x band hemt transistor cfb0103 CFB0103-B CFB0103B CFS0103-SB CFA0103-A Mimix Broadband CF001
    Text: GaAs Pseudomorphic HEMT Transistor April 2008 - Rev 03-Apr-08 CF001-03 Features High Gain: Usable to 44 GHz Low Noise Figure 0.8 dB @ 12 GHz Wafer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF001-03 GaAs-based transistor is a 300 um gate


    Original     		PDF 03-Apr-08 CF001-03 CF001-03 MIL-STD-750 CF001-03-000X CFA0103A low noise x band hemt transistor cfb0103 CFB0103-B CFB0103B CFS0103-SB CFA0103-A Mimix Broadband CF001

    Untitled

    Abstract: No abstract text available
    Text: GaAs Pseudomorphic HEMT Transistor April 2008 - Rev 03-Apr-08 CF001-03 Features High Gain: Usable to 44 GHz Low Noise Figure 0.8 dB @ 12 GHz Wafer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF001-03 GaAs-based transistor is a 300 um gate


    Original     		PDF 03-Apr-08 CF001-03 CF001-03 MIL-STD-750 comm-000X

    8054 transistor

    Abstract: TRANSISTOR 4847 AT-41500 s415 RF s415 TRANSISTOR c 5803 AT-41586 S21E chip die npn transistor AT41500
    Text: AT-41500 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Data Sheet Description/Applications Features The AT-41500 of Avago Techologies is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter pitch enables this transistor to be


    Original     		PDF AT-41500 AT-41500 AT-41500-GP4 045mm AV01-0077EN AV01-0438EN 8054 transistor TRANSISTOR 4847 s415 RF s415 TRANSISTOR c 5803 AT-41586 S21E chip die npn transistor AT41500

    AT41500

    Abstract: AT-41500 transistor zo 109 TRANSISTOR zo 109 ma CHIP TRANSISTOR TRANSISTOR 12 GHZ 3 w RF POWER TRANSISTOR NPN 50/TRANSISTOR zo 109 ma transistor Gigahertz AT-41586
    Text: AT-41500 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Data Sheet Description/Applications Features The AT-41500 of Avago Techologies is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter pitch enables this transistor to be


    Original     		PDF AT-41500 AT-41500 AT-41500-GP4 AV01-0077EN AT41500 transistor zo 109 TRANSISTOR zo 109 ma CHIP TRANSISTOR TRANSISTOR 12 GHZ 3 w RF POWER TRANSISTOR NPN 50/TRANSISTOR zo 109 ma transistor Gigahertz AT-41586

    AT-41500

    Abstract: TRANSISTOR zo 109 ma transistor zo 109 ZO 109 transistor at41500
    Text: AT-41500 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Data Sheet Description/Applications Features The AT-41500 of Avago Techologies is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter pitch enables this transistor to be


    Original     		PDF AT-41500 AT-41500 AT-41500-GP4 AV01-0077EN TRANSISTOR zo 109 ma transistor zo 109 ZO 109 transistor at41500