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    TRANSISTOR W8NA60 Search Results

    TRANSISTOR W8NA60 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR W8NA60 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    W8NA60

    Abstract: H8NA60FI W8NA60 Schematic transistor w8na60 STH8NA60FI h8na60f STW8NA60 S2035 TRANSISTOR FS 2025 WO30
    Text: STW8NA60 STH8NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE ST W8NA60 ST H8NA60FI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 600 V 600 V <1Ω <1Ω 8 A 5 A TYPICAL RDS(on) = 0.92 Ω ± 30V GATE TO SOURCE VOLTAGE RATING


    Original     		STW8NA60 STH8NA60FI W8NA60 H8NA60FI 100oC O-247 ISOWATT218 W8NA60 H8NA60FI W8NA60 Schematic transistor w8na60 STH8NA60FI h8na60f STW8NA60 S2035 TRANSISTOR FS 2025 WO30 PDF

    8NA60

    Abstract: W8NA60 STH8NA60FI w8na W8NA60 Schematic transistor w8na60 STW8NA60 sth8na60 TRANSISTOR sd 346 P025C
    Text: STW8NA60 STH8NA60FI  N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STW 8NA60 STH8NA60F I • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 600 V 600 V <1 Ω <1 Ω 8 A 5 A TYPICAL RDS(on) = 0.92 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED


    Original     		STW8NA60 STH8NA60FI 8NA60 STH8NA60F 100oC O-247 ISOWATT218 W8NA60 8NA60 W8NA60 STH8NA60FI w8na W8NA60 Schematic transistor w8na60 STW8NA60 sth8na60 TRANSISTOR sd 346 P025C PDF