RN4985FS
Abstract: No abstract text available
Text: RN4985FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor RN4985FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 0.8±0.05 0.1±0.05 Incorporating a bias resistor into a transistor reduces parts count.
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RN4985FS
RN4985FS
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Untitled
Abstract: No abstract text available
Text: RN4985FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor RN4985FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 0.8±0.05 0.1±0.05 Incorporating a bias resistor into a transistor reduces parts count.
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RN4985FS
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Untitled
Abstract: No abstract text available
Text: RN4985FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN4985FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 0.8±0.05 0.1±0.05 Incorporating a bias resistor into a transistor reduces parts count.
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RN4985FS
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RN4985FS
Abstract: No abstract text available
Text: RN4985FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN4985FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 0.8±0.05 0.1±0.05 Incorporating a bias resistor into a transistor reduces parts count.
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RN4985FS
RN4985FS
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KTC812U
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC812U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES A super-minimold package houses 2 transistor. 1 6 2 5 3 4 DIM A A1 B A C High pairing property in hFE. A1 C Excellent temperature response between these 2 transistor.
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KTC812U
KTC812U
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC812U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES A super-minimold package houses 2 transistor. 1 6 2 5 3 4 DIM A A1 B A C High pairing property in hFE. A1 C Excellent temperature response between these 2 transistor.
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KTC812U
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Untitled
Abstract: No abstract text available
Text: RN4985FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN4985FS Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications 1.0±0.05 0.1±0.05 2 5 3 4 0.48 Equivalent Circuit and Bias Resistor Values
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RN4985FS
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PBHV8540T
Abstract: PBHV9040T IEC 62-50 code MARKING CODE SMD IC
Text: PBHV8540T 500 V, 0.5 A NPN high-voltage low VCEsat BISS transistor Rev. 02 — 14 January 2009 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
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PBHV8540T
O-236AB)
PBHV9040T.
AEC-Q101
PBHV8540T
PBHV9040T
IEC 62-50 code
MARKING CODE SMD IC
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MARKING CODE SMD IC
Abstract: PBHV8540T PBHV9040T IEC 62-50 code SMD W4 Transistor SOT23 marking codes SOT23 NXP power dissipation TO-236AB NXP TRANSISTOR SMD MARKING CODE SOT23
Text: PBHV8540T 500 V, 0.5 A NPN high-voltage low VCEsat BISS transistor Rev. 01 — 5 February 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
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PBHV8540T
O-236AB)
PBHV9040T.
AEC-Q101
PBHV8540T
MARKING CODE SMD IC
PBHV9040T
IEC 62-50 code
SMD W4 Transistor
SOT23 marking codes
SOT23 NXP power dissipation TO-236AB
NXP TRANSISTOR SMD MARKING CODE SOT23
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EN6024
Abstract: SPI-235 SPI-235-19
Text: Ordering number : EN6024 GaAs Infrared LED SPI-235-19 SPI-235-19 Ultraminiature photointerrupter single-transistor type Features • GaAs Infrared LED plus Single Phototransistor • Photo-Interrupter • Contact type • Compact type : H3.25 ✕ L5.0 ✕ W4.5mm
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EN6024
SPI-235-19
EN6024
SPI-235
SPI-235-19
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SPI-236-17
Abstract: 5mm Sanyo led JIS-C-7032
Text: Ordering number : EN6025 GaAs Infrared LED SPI-236-17 SPI-236-17 Ultraminiature photointerrupter single-transistor type Features • GaAs Infrared LED plus Single Phototransistor • Photo-Interrupter • Contact type • Compact type : H3.25 ✕ L5.0 ✕ W4.5mm
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EN6025
SPI-236-17
SPI-236-17
5mm Sanyo led
JIS-C-7032
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w454
Abstract: ACPL-P454 ACPL-W454 E55361 EN60747-5-2 HCPL-4504
Text: ACPL-W454/P454 High CMR High Speed Optocoupler Data Sheet Description Features The ACPL-W454/P454 is similar to Avago Technologies other high speed transistor output optocouplers, but with shorter propagation delays and higher CTR. The ACPL-W454/P454 also has a guaranteed propagation
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ACPL-W454/P454
ACPL-W454/P454
ACPL-W454)
AV01-0253EN
w454
ACPL-P454
ACPL-W454
E55361
EN60747-5-2
HCPL-4504
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W4401DW
Abstract: No abstract text available
Text: W4401DW Epitaxial Planer Transistor PNP Silicon 1 2 3 6 5 1 4 6 5 2 4 3 SOT-363 SC-88 PNP+PNP Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value -50 -60
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W4401DW
OT-363
SC-88)
W4401DW
OT-363
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Untitled
Abstract: No abstract text available
Text: W4413DW Dual Epitaxial Planer Transistor NPN+PNP Silicon 2 3 1 6 5 1 4 Features: 5 6 2 4 3 SOT-363 SC-88 NPN+PNP * Epitaxial Planar Die Construction * Ldeal For Low Power Amplification and Switching Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage
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W4413DW
OT-363
SC-88)
100MHz)
-150mA
-15mA)
-150mA,
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NJ15 U4 W
Abstract: nj15 transistor w4
Text: Inductive Proximity Sensors 15mm Sensing Range 2-Wire AC 4-Wire AC 15mm 15mm Yes Yes MODEL NUMBER S NJ15+U4+W NJ15+U4+W4 OUTPUT: Suffix W AC – Thyristor AC/DC – Transistor N.O. or N.C. — Suffix W4 Specifications SENSING RANGE SHIELDED — N.O. and N.C.
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8-500mA
500mA
A/20ms
20-250VAC/45-65Hz
20-130VAC/45-65Hz
NJ15 U4 W
nj15
transistor w4
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ac Inverter schematics 10 kw
Abstract: INVERTER 50 kW 25 KW inverter ACPL-P454-000E ac Inverter 10 kw ACPL-P454 dc to ac inverter schematic diagram kw POWER SUPPLY transformer 100 kW ACPL-W454
Text: ACPL-W454/P454 High CMR High Speed Optocoupler Data Sheet Lead Pb Free RoHS 6 fully compliant RoHS 6 fully compliant options available; -xxxE denotes a lead-free product Description Features The ACPL-W454/P454 is similar to Avago Technologies other high speed transistor output optocouplers, but with
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ACPL-W454/P454
ACPL-W454/P454
ACPLW454/P454
ACPL-W454)
AV01-0253EN
ac Inverter schematics 10 kw
INVERTER 50 kW
25 KW inverter
ACPL-P454-000E
ac Inverter 10 kw
ACPL-P454
dc to ac inverter schematic diagram
kw POWER SUPPLY
transformer 100 kW
ACPL-W454
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ACPL-P454
Abstract: ACPL-W454 HCPL-4504
Text: ACPL-P454 and ACPL-W454 High CMR High Speed Optocoupler Data Sheet Lead Pb Free RoHS 6 fully compliant RoHS 6 fully compliant options available; -xxxE denotes a lead-free product Description Features The ACPL-W454/P454 is similar to Avago Technologies other high speed transistor output optocouplers, but with
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ACPL-P454
ACPL-W454
ACPL-W454/P454
ACPLW454/P454
ACPL-W454)
ACPL-W454
HCPL-4504
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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BT816
Abstract: TA114E a768 transistor b722 B861 B718 equivalent transistor TT 3034 C785 transistor b714 transistor B728
Text: DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES: •o OUT I N o -MA/V • Replaces up to three parts 1 transistor & 2 resis tors with one part • Available in a variety of surface mount or leaded
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mm/13"
O-92S)
BT816
TA114E
a768
transistor b722
B861
B718
equivalent transistor TT 3034
C785 transistor
b714 transistor
B728
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equivalent transistor TT 3034
Abstract: transistor TT 3034 A771 TRANSISTOR transistor b722 124e transistor Transistor b865 tc 144e DTC1132 B718 TRANSISTOR 124E
Text: DTA/DTB/DTC/DTD DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, D river & Interface Circuits FEATURES; w w w . Datasheet. i n • Replaces up to three parts 1 transistor & 2 resis tors with one part • Available in a variety of surface mount or leaded
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transistor T K 2056
Abstract: K 2056 transistor transistor K 2056
Text: SANYO SEMICONDUCTOR 12E CORP D | 7 T ci 7 D 7 t 1 0 0 0 S S 0 0 g 32S C 4256 SS2SC4271 Silicon Transistor Silicon Transistor ' High Voltage Switching Applications Very High-Oefinrtion CR T Display Applications JEDEC: T 022 0 package JEDEC: T0126 package High breakdown voltage
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SS2SC4271
T0126
300mA,
100mA)
SS2SC4272
1S-126A
IS-20MA
transistor T K 2056
K 2056 transistor
transistor K 2056
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1A4M
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE / FN 1A 4M MEDIUM SPEED SW ITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS • Resistors B u ilt-in TYPE in m illim e te r s HC, O-AA'VR = 1 0 k i2 • 10 k n l~A/W-4 R’
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RQW 130
Abstract: MRF911 case 317-01
Text: MOTOROLA SC XSTRS/R F b3b?254 QQ'm'îm T « H O T t MbE S MOTOROLA T - 3 1 - l? \ SEM ICO N D U CTO R TECHNICAL DATA MRF911 The RF Line fT * 5.0 GHz @ 30m A HIGH FREQUENCY TRANSISTOR NPN SILICON HIGH FREQUENCY TRANSISTOR NPN SILICON . . . designed primarily for use in high-gain, low-noise tuned and
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MRF911
RQW 130
MRF911
case 317-01
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Untitled
Abstract: No abstract text available
Text: FMW3/FMW4 h ~7 > V 7s $ / I ransistors i —Jls K h ‘7 > v ^ i f/Dual Mini-Mold Transistor x t ! ? * ' > 7 J l s 7 l s - i - B N P N •>lJ a > Epitaxial Planar NPN Silicon Transistor — / General Small Signal Amp. FMW3 FMW4 • W f ^ ü S I /D im e n s io n s U n it: mm
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