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    TRANSISTOR W1 SMD Search Results

    TRANSISTOR W1 SMD Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR W1 SMD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2L smd transistor

    Abstract: 2l TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 2l TRANSISTOR SMD MARKING 2l smd transistor 2l MMBT5401-G SMD MARKING CODE 2L TRANSISTOR SMD MARKING CODE PD smd code 2l transistor smd 2l
    Text: COMCHIP General Purpose Transistor SMD Diodes Specialist MMBT5401-G PNP RoHS Device Features SOT-23 -Epitaxial planar die construction. -Complementary NPN type available (MMBT5551-G). -Ideal for medium power amplification and switching. 0.119(3.00) 0.110(2.80)


    Original     		PDF MMBT5401-G OT-23 MMBT5551-G) QW-BTR18 2L smd transistor 2l TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 2l TRANSISTOR SMD MARKING 2l smd transistor 2l MMBT5401-G SMD MARKING CODE 2L TRANSISTOR SMD MARKING CODE PD smd code 2l transistor smd 2l

    TRANSISTOR SMD MARKING CODE p1

    Abstract: TRANSISTOR SMD MARKING CODE 2A A O TRANSISTOR SMD MARKING CODE Transistor 03 smd smd transistor MARKING 2A smd transistor code 2a TRANSISTOR SMD MARKING CODE MARKING SMD TRANSISTOR W1 TRANSISTOR SMD MARKING M Y 2A transistor smd SOT-23
    Text: General Purpose Transistor SMD Diodes Specialist MMBT3906-G PNP RoHS Device Features SOT-23 -Epitaxial planar die construction 0.119 (3.00) 0.110 (2.80) -As complementary type, the NPN 3 transistor MMBT3904-G is recommended 0.056 (1.40) 0.047 (1.20) 1 2


    Original     		PDF MMBT3906-G OT-23 MMBT3904-G XXX2-02 XXX1-03 XXX2-03 XXX1-04 XXX2-04 XXX1-05 XXX2-05 TRANSISTOR SMD MARKING CODE p1 TRANSISTOR SMD MARKING CODE 2A A O TRANSISTOR SMD MARKING CODE Transistor 03 smd smd transistor MARKING 2A smd transistor code 2a TRANSISTOR SMD MARKING CODE MARKING SMD TRANSISTOR W1 TRANSISTOR SMD MARKING M Y 2A transistor smd SOT-23

    transistor SMD MARKING CODE HF

    Abstract: smd code HF transistor TRANSISTOR SMD MARKING CODE BS transistor smd 723 TRANSISTOR SMD MARKING CODE
    Text: Comchip General Purpose Transistor SMD Diode Specialist 2SC5658-HF NPN RoHS Device Halogen Free Features SOT-723 -Low Cob. 0.011(0.270) 0.007(0.170) 1 Mechanical data 0.049(1.25) 0.031(0.800) -Case: SOT-723, molded plastic. -Terminals: solderable per MIL-STD-750,


    Original     		PDF 2SC5658-HF OT-723 OT-723, MIL-STD-750, QW-JTR07 transistor SMD MARKING CODE HF smd code HF transistor TRANSISTOR SMD MARKING CODE BS transistor smd 723 TRANSISTOR SMD MARKING CODE

    transistor SMD MARKING CODE HF

    Abstract: SMD TRANSISTOR MARKING BR smd code HF transistor TRANSISTOR SMD MARKING CODE p1 6V 100 smd diode MARKING SMD TRANSISTOR 560 TRANSISTOR SMD MARKING CODE MV DIODE smd transistor code smd transistor A10 TRANSISTOR SMD MARKING CODE BS t
    Text: Comchip General Purpose Transistor SMD Diode Specialist 2SC5658-HF NPN RoHS Device Halogen Free Features SOT-723 -Low Cob. 0.011(0.270) 0.007(0.170) 1 Mechanical data 0.049(1.25) 0.031(0.800) -Case: SOT-723, molded plastic. -Terminals: solderable per MIL-STD-750,


    Original     		PDF 2SC5658-HF OT-723 OT-723, MIL-STD-750, QW-JTR07 transistor SMD MARKING CODE HF SMD TRANSISTOR MARKING BR smd code HF transistor TRANSISTOR SMD MARKING CODE p1 6V 100 smd diode MARKING SMD TRANSISTOR 560 TRANSISTOR SMD MARKING CODE MV DIODE smd transistor code smd transistor A10 TRANSISTOR SMD MARKING CODE BS t

    TRANSISTOR SMD MARKING CODE 1AM

    Abstract: smd transistor 1AM smd 1AM SMD TRANSISTOR MARKING 1am 1am smd 1am smd transistor SMD MARKING CODE 1am SMD 1am Transistor marking code SS SOT23 transistor transistor 1am
    Text: General Purpose Transistor SMD Diodes Specialist MMBT3904-G NPN RoHS Device Features -Epitaxial planar die construction SOT-23 -As complementary type, the PNP 0.118(3.00) 0.110(2.80) transistor MMBT3904-G is recommended 3 0.055(1.40) 0.047(1.20) 1 2 0.006(0.15)


    Original     		PDF MMBT3904-G OT-23 MMBT3904-G QW-BTR01 TRANSISTOR SMD MARKING CODE 1AM smd transistor 1AM smd 1AM SMD TRANSISTOR MARKING 1am 1am smd 1am smd transistor SMD MARKING CODE 1am SMD 1am Transistor marking code SS SOT23 transistor transistor 1am

    TRANSISTOR SMD MARKING CODE 1AM

    Abstract: smd transistor 1AM smd 1AM SMD MARKING CODE 1am MMBT3904-HF SMD TRANSISTOR MARKING 1am 1am smd marking code SS SOT23 MARKING SMD PNP TRANSISTOR 1am 1am smd transistor
    Text: General Purpose Transistor SMD Diodes Specialist MMBT3904-HF NPN RoHS Device Features -Halogen Free -Epitaxial planar die construction SOT-23 0.118(3.00) 0.110(2.80) -As complementary type, the PNP 3 transistor MMBT3904-HF is recommended 0.055(1.40) 0.047(1.20)


    Original     		PDF MMBT3904-HF OT-23 MMBT3904-HF QW-HTR02 TRANSISTOR SMD MARKING CODE 1AM smd transistor 1AM smd 1AM SMD MARKING CODE 1am SMD TRANSISTOR MARKING 1am 1am smd marking code SS SOT23 MARKING SMD PNP TRANSISTOR 1am 1am smd transistor

    TRANSISTOR SMD MARKING CODE 2A

    Abstract: TRANSISTOR SMD MARKING CODE p1 TRANSISTOR SMD MARKING CODE d2 smd code marking 2A sot23 marking code SS SOT23 transistor TRANSISTOR SMD MARKING CODE UA TRANSISTOR SMD MARKING CODE 16 TRANSISTOR SMD MARKING CODE X D smd transistor marking code P TRANSISTOR SMD MARKING CODE t 04
    Text: General Purpose Transistor SMD Diodes Specialist MMBT3906-HF PNP RoHS Device Features -Halogen Free -Epitaxial planar die construction SOT-23 0.119 (3.00) 0.110 (2.80) -As complementary type, the NPN 3 transistor MMBT3906-HF is recommended 0.056 (1.40) 0.047 (1.20)


    Original     		PDF MMBT3906-HF OT-23 MMBT3906-HF XXX2-01 XXX2-02 XXX2-03 XXX2-04 XXX2-05 XXX2-06 TRANSISTOR SMD MARKING CODE 2A TRANSISTOR SMD MARKING CODE p1 TRANSISTOR SMD MARKING CODE d2 smd code marking 2A sot23 marking code SS SOT23 transistor TRANSISTOR SMD MARKING CODE UA TRANSISTOR SMD MARKING CODE 16 TRANSISTOR SMD MARKING CODE X D smd transistor marking code P TRANSISTOR SMD MARKING CODE t 04

    TRANSISTOR SMD MARKING CODE QA

    Abstract: smd code marking 2A sot23 transistor smd 303 TRANSISTOR SMD MARKING CODE 2A smd transistor marking p1 TRANSISTOR SMD p1 TRANSISTOR SMD MARKING CODE d2 TRANSISTOR SMD MARKING CODE p1 TRANSISTOR SMD MARKING CODE 210 smd 303 transistor
    Text: General Purpose Transistor SMD Diodes Specialist MMBT3906-HF PNP RoHS Device Features -Halogen Free -Epitaxial planar die construction SOT-23 0.119 (3.00) 0.110 (2.80) -As complementary type, the NPN 3 transistor MMBT3906-HF is recommended 0.056 (1.40) 0.047 (1.20)


    Original     		PDF MMBT3906-HF OT-23 MMBT3906-HF QW-HTR01 TRANSISTOR SMD MARKING CODE QA smd code marking 2A sot23 transistor smd 303 TRANSISTOR SMD MARKING CODE 2A smd transistor marking p1 TRANSISTOR SMD p1 TRANSISTOR SMD MARKING CODE d2 TRANSISTOR SMD MARKING CODE p1 TRANSISTOR SMD MARKING CODE 210 smd 303 transistor

    TRANSISTOR SMD MARKING CODE p1

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT323 TRANSISTOR SMD MARKING CODE d2 TRANSISTOR SMD MARKING CODE ce TRANSISTOR SMD MARKING CODE oc smd transistor marking code P MARKING CODE SMD IC TRANSISTOR SMD MARKING CODE 1l SMD TRANSISTOR MARKING 1B SMD TRANSISTOR MARKING 28
    Text: COMCHIP Small Signal Transistor SMD Diodes Specialist BC846AW-G Thru. BC848CW-G NPN RoHS Device Features -Power dissipation O PCM: 0.15W (@TA=25 C) -Collector current ICM: 0.1A -Collector-base voltage VCBO: BC846W=80V BC847W=50V BC848W=30V -Operating and storage junction temperature


    Original     		PDF BC846AW-G BC848CW-G BC846W BC847W BC848W OT-323 OT-323, MIL-STD-750, QW-BTR35 BC846AW-G TRANSISTOR SMD MARKING CODE p1 TRANSISTOR SMD CODE PACKAGE SOT323 TRANSISTOR SMD MARKING CODE d2 TRANSISTOR SMD MARKING CODE ce TRANSISTOR SMD MARKING CODE oc smd transistor marking code P MARKING CODE SMD IC TRANSISTOR SMD MARKING CODE 1l SMD TRANSISTOR MARKING 1B SMD TRANSISTOR MARKING 28

    SMD TRANSISTOR MARKING 5c

    Abstract: smd transistor 5c TRANSISTOR SMD MARKING CODE 5c TRANSISTOR SMD MARKING CODE 3f transistor smd code marking 101 transistor smd code marking 102 TRANSISTOR SMD MARKING CODE 3G 5c smd transistor TRANSISTOR SMD MARKING CODE 3L SMD TRANSISTOR MARKING 3B
    Text: COMCHIP Small Signal Transistor SMD Diodes Specialist BC856AW-G Thru. BC858CW-G PNP RoHS Device Features -Ideally suited for automatic insertion -For Switching and AF Amplifier Applications -Power dissipation PCM: 0.15W (@TA=25 OC) -Collector current ICM: -0.1A


    Original     		PDF BC856W= BC857W= BC858W= BC856AW-G BC858CW-G OT-323 OT-323, MIL-STD-750, QW-BTR36 SMD TRANSISTOR MARKING 5c smd transistor 5c TRANSISTOR SMD MARKING CODE 5c TRANSISTOR SMD MARKING CODE 3f transistor smd code marking 101 transistor smd code marking 102 TRANSISTOR SMD MARKING CODE 3G 5c smd transistor TRANSISTOR SMD MARKING CODE 3L SMD TRANSISTOR MARKING 3B

    43 smd SOT-89

    Abstract: mp sot 23 mp3z nec 2501 sot89 "type name" J transistor 1.B smd transistor TRANSISTOR SMD sot-89 NEC 2701 3r smd transistor MP-3Z Package
    Text: Information Voltage Regulator of SMD SOT-89 Power mini mold MP-3Z (SC-63) Document No. G11872EJ3V0IF00 (3rd edition) Date Published March 2000 N CP(K) Printed in Japan 2000 [MEMO] 2 Information G11872EJ3V0IF00 • The information in this document is subject to change without notice. Before using this document, please


    Original     		PDF OT-89 SC-63) G11872EJ3V0IF00 ri88-6130 43 smd SOT-89 mp sot 23 mp3z nec 2501 sot89 "type name" J transistor 1.B smd transistor TRANSISTOR SMD sot-89 NEC 2701 3r smd transistor MP-3Z Package

    SOT-23

    Abstract: TRANSISTOR SMD fr 21 smd transistor ds 65
    Text: Formosa MS SMD NPN Transistor BC846A/B-BC847A/B/C BC848A/B/C- BC849B/C-BC850B/C List List. 1 Package outline. 2


    Original     		PDF BC846A/B-BC847A/B/C BC848A/B/C- BC849B/C-BC850B/C 1000hrs 15min) 15min 20sec 1000cycle 96hrs SOT-23 TRANSISTOR SMD fr 21 smd transistor ds 65

    TL113

    Abstract: tl201 TL217 w3 smd transistor transistor c111
    Text: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power ampliiers applications with frequencies from 700 MHz to 2200


    Original     		PDF PTFA220081M PTFA220081M PG-SON-10 TL113 tl201 TL217 w3 smd transistor transistor c111

    capacitor marking c106

    Abstract: NFM18Ps105 TL217 NFM18PS105R0J3 TL222 PTFA220081M Transistor tl217 TRANSISTOR SMD w2 c105 TRANSISTOR c103 TRANSISTOR DATA
    Text: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200


    Original     		PDF PTFA220081M PTFA220081M capacitor marking c106 NFM18Ps105 TL217 NFM18PS105R0J3 TL222 Transistor tl217 TRANSISTOR SMD w2 c105 TRANSISTOR c103 TRANSISTOR DATA

    c102 TRANSISTOR

    Abstract: PTFA220121M NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113
    Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS


    Original     		PDF PTFA220121M PTFA220121M 12-watt PG-SON-10 c102 TRANSISTOR NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113

    SMD r801

    Abstract: TL217 TL218 TL2082 TRANSISTOR c801 c803 R804 3224W-202ECT-ND transistor c803 TL223
    Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain,


    Original     		PDF PTFA220041M PTFA220041M SMD r801 TL217 TL218 TL2082 TRANSISTOR c801 c803 R804 3224W-202ECT-ND transistor c803 TL223

    TRANSISTOR C802

    Abstract: TL2262 c102 TRANSISTOR C102 M transistor atc100a c103 m TRANSISTOR c103 TRANSISTOR ATC100A100JW150X smd transistor bd 37 TRANSISTOR c104
    Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS


    Original     		PDF PTFA220121M PTFA220121M 12-watt PG-SON-10 TRANSISTOR C802 TL2262 c102 TRANSISTOR C102 M transistor atc100a c103 m TRANSISTOR c103 TRANSISTOR ATC100A100JW150X smd transistor bd 37 TRANSISTOR c104

    Untitled

    Abstract: No abstract text available
    Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power ampliier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain,


    Original     		PDF PTFA220041M PTFA220041M PG-SON-10

    c102 TRANSISTOR

    Abstract: LM7805 M SMD R804 c103 TRANSISTOR transistor c107 m TRANSISTOR c801 NFM18PS105R0J3 TRANSISTOR c104 TL217 PTFA220041M
    Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency


    Original     		PDF PTFA220041M PTFA220041M PG-SON-10 c102 TRANSISTOR LM7805 M SMD R804 c103 TRANSISTOR transistor c107 m TRANSISTOR c801 NFM18PS105R0J3 TRANSISTOR c104 TL217

    c102 TRANSISTOR

    Abstract: tl113 c103 TRANSISTOR TRANSISTOR c104 NFM18PS105R0J3 c103 TRANSISTOR equivalent c104 TRANSISTOR PTFA220041M TL108 tl111
    Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency


    Original     		PDF PTFA220041M PTFA220041M c102 TRANSISTOR tl113 c103 TRANSISTOR TRANSISTOR c104 NFM18PS105R0J3 c103 TRANSISTOR equivalent c104 TRANSISTOR TL108 tl111

    2F1 SMD Transistor

    Abstract: 2F2 SMD Transistor w2 smd transistor TRANSISTOR SMD w2 schematic diagram induction heating BFG425W smd transistor w2 2 GHz LNA BFG425W APPLICATION BFG410W
    Text: Philips Semiconductors Application Note Ultra Low Noise Amplifiers for 900 and 2000 MHz with High IP3 by Korné Vennema Philips Semiconductors Slatersville, RI December 1996 #KV96-157 This application note describes four Low Noise Amplifier designs with the


    Original     		PDF KV96-157 BFG410W BFG425W, BFG410W BFG425W BFG425W. BFG400W 2F1 SMD Transistor 2F2 SMD Transistor w2 smd transistor TRANSISTOR SMD w2 schematic diagram induction heating BFG425W smd transistor w2 2 GHz LNA BFG425W APPLICATION

    transistor 2N2222 SMD

    Abstract: capacitor 2200 uF smd transistor l6 2n2222 smd 2n2222 smd transistor L5 smd transistor TRANSISTOR SMD L3 GP 0,47K w2 smd transistor ACPR1980
    Text: BLF4G10LS-160 UHF power LDMOS transistor Rev. 01 — 19 June 2007 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance


    Original     		PDF BLF4G10LS-160 ACPR400 ACPR600 BLF4G10LS-160 transistor 2N2222 SMD capacitor 2200 uF smd transistor l6 2n2222 smd 2n2222 smd transistor L5 smd transistor TRANSISTOR SMD L3 GP 0,47K w2 smd transistor ACPR1980

    capacitor 2200 uF

    Abstract: transistor 2N2222 SMD R10 smd 2n2222 smd transistor 2N2222 78L08 ACPR1980 ACPR400 ACPR600 ACPR750
    Text: BLF4G10-160 UHF power LDMOS transistor Rev. 01 — 22 June 2007 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB test circuit.


    Original     		PDF BLF4G10-160 ACPR400 ACPR600 ACPR750 ACPR1980 BLF4G10-160 capacitor 2200 uF transistor 2N2222 SMD R10 smd 2n2222 smd transistor 2N2222 78L08

    transistor c735

    Abstract: ATC100A120FW150XB TRANSISTOR c104 TL107 c103 m TRANSISTOR c103 TRANSISTOR TRANSISTOR C802 C735 transistor TRANSISTOR C107 TRANSISTOR C103
    Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency


    Original     		PDF PTFA220041M PTFA220041M PG-SON-10 transistor c735 ATC100A120FW150XB TRANSISTOR c104 TL107 c103 m TRANSISTOR c103 TRANSISTOR TRANSISTOR C802 C735 transistor TRANSISTOR C107 TRANSISTOR C103