Untitled
Abstract: No abstract text available
Text: , Una, TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Darlingtion Power Transistor PMD16K80 DESCRIPTION • High DC current gain • Collector-Emitter Sustaining VoltageVcEO(sus)= SOV(Min)
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PMD16K80
PMD17K80
100mA;
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Untitled
Abstract: No abstract text available
Text: J.£.is.£.u ^s-mL-C-onauctoi -I 10 duct i, Line, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MTP8N60 N-Channel Mosfet Transistor • FEATURES • Drain Current-ID= 7.5A@ TC=25"C • Drain Source Voltage-
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MTP8N60
O-220C
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Untitled
Abstract: No abstract text available
Text: , L/nc, TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. UHF push-pull power transistor FEATURES • Double Input and output matching for easy matching and high gain • Poly-silicon emitter-ballasting
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BLV948
2x100
BLV948
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2SA1117
Abstract: No abstract text available
Text: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA1117 DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEO= -200V(Min.) • High Power Dissipation
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2SA1117
-200V
2SC2608
-50mA;
-200V;
2SA1117
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Untitled
Abstract: No abstract text available
Text: c2\£.w J. nc. tU TELEPHONE: 973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 USA. Silicon NPN Power Transistor BUY56 DESCRIPTION • Collector-Emitter Breakdown Voltage:V(BR)CEo=160V(Min.) • Low Collector Saturation Voltage:V CE (sat)=1.5V@lc=7A
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BUY56
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Abstract: No abstract text available
Text: zSzmi-Conauctoi \P\odu.ci^, Una. TELEPHONE: 973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BUY58 Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEo= 160V(Min.) • Low Collector Saturation Voltage:V CE (.at)=1.3V@l c =10A
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BUY58
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Untitled
Abstract: No abstract text available
Text: , U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA900 DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEO=-18V(Min) • Good Linearity of I>E • Low Collector Saturation Voltage
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2SA900
2SC1568
O-126
-50mA
-50mA;
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Untitled
Abstract: No abstract text available
Text: <zEs.mL-don.au.ctot Lpioaucti, Line. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Power Transistor BDY54 DESCRIPTION • Collector-Emitter Sustaining Voltage: VCEO(susr 120V(Min.)
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BDY54
10MHz
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6 Pin LED PIRANHA
Abstract: everlight 50-215 smd transistor 2T EHP-A09K-BRTT-5670HEAFAD9K-1T8-AM PLR262 19-237A/R6GHBHC-B01/2T IRM-3638M-X
Text: CATALOGUE 2014-2015 OPTOELECTRONIC COMPONENTS www.everlight.com EVERLIGHT THE SOURCE OF LIGHT EVERLIGHT illuminates the way for many of the world’s brightest companies. Acclaimed as a premiere global solution provider in the opto-semiconductor industry and held in high regard as a reliable
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D-85737
SE-573
6 Pin LED PIRANHA
everlight 50-215
smd transistor 2T
EHP-A09K-BRTT-5670HEAFAD9K-1T8-AM
PLR262
19-237A/R6GHBHC-B01/2T
IRM-3638M-X
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TRANSISTOR bH-16
Abstract: bh16 transistor BH-16 transistor BCP53T1 BH onsemi SOT-223 16T1 BCP53T1 BCP56 BCP56T1 BCP56T3
Text: BCP56T1 Series Preferred Devices NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications.
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BCP56T1
OT-223
OT-223
inch/1000
BCP56T3
inch/4000
BCP53T1
BCP56
TRANSISTOR bH-16
bh16 transistor
BH-16 transistor
BCP53T1 BH
onsemi SOT-223
16T1
BCP53T1
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Integrated Inductive Components
Abstract: TB 2929 H amplifier PHILIPS ferrite transformer cores magnetic amplifier saturable core planar transformer formula Indiana general ferrite core MeFe2O4 TRANSISTOR PHILIPS 8050 3C30 Philips KS capacitors
Text: technical note IIC Integrated Inductive Components Philips Components IIC Integrated Inductive Components Contents 1 Introduction 3 Features and Applications 4 Design example 8 Materials 9 Type Number structure 14 Environmental aspects 14 Product range 14
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IIC10
COD19
Integrated Inductive Components
TB 2929 H amplifier
PHILIPS ferrite transformer cores
magnetic amplifier saturable core
planar transformer formula
Indiana general ferrite core
MeFe2O4
TRANSISTOR PHILIPS 8050
3C30
Philips KS capacitors
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ifm D 45128
Abstract: kd 2060 transistor
Text: .co m Original Device Manual ClassicController w.if m CR0032 Runtime system v02 ele ifm 7390660_07_UK 2014-08-15 ctro nic gm bh ww CODESYS v2.3 > English ifm Device Manual ecomatmobile ClassicController CR0032 Runtime System V02 2014-08-15 .co m Contents
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CR0032
CR0032)
ifm D 45128
kd 2060 transistor
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TEMPLATEA
Abstract: kd 2060 transistor
Text: .co m Original Device Manual CabinetController w.if m CR0303 Runtime system v05 ele ifm 7390669_05_UK 2014-08-19 ctro nic gm bh ww CODESYS v2.3 > English ifm Device Manual ecomatmobile CabinetController CR0303 Runtime System V05 2014-08-19 .co m Contents
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CR0303
CR0303)
document09
TEMPLATEA
kd 2060 transistor
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BCX70
Abstract: BCX71 BCX71G BCX71H BCX71J BCX71K BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 BCX71 series PNP general purpose transistors Product specification Supersedes data of 1997 Apr 18 1999 Apr 20 Philips Semiconductors Product specification PNP general purpose transistors BCX71 series FEATURES
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M3D088
BCX71
BCX70
SCA63
115002/00/03/pp8
BCX71G
BCX71H
BCX71J
BCX71K
BP317
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Untitled
Abstract: No abstract text available
Text: POlilEREX INC m 3*1E D • 7Stm b51 000407b fl H P R X u /a u x T-l'l-lZ KR221K03 Powerex, Inc., Wills Street, Youngwood, Pennsylvania IS697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 Chopper Darlington
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000407b
KR221K03
IS697
BP107,
Amperes/1000
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BUK443-60A
Abstract: No abstract text available
Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK443-60A/B
BUK443
OT186
BUK443-60A
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bBE D • bbSBIBl 002flflS4 b7fl * A P X BLU60/12 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-119 envelope prim arily intended fo r use in mobile radio transmitters in the 470 MHz communications band. Features
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002flflS4
BLU60/12
OT-119
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tpv394a
Abstract: RF TV TRANSMITTER tv transmitter amplifier circuit arco 404 Arco 423 VHF transmitter circuit arco 403
Text: 4bE D flOTOROLA SC XSTRS/R F MOTOROLA • I SEMICONDUCTOR ^ b3b?254 OG'iSBll 4 ■ HOTb T=-53-OB TECHNICAL DATA The RF Line TPV394A VH F Linear Power Transistor . . . d e s ig n e d s p e c ific a lly fo r ban d III T V tra n s p o s e rs a n d tra n s m itte r a m p lifie rs. The
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0GT5311
TPV394A
TPV394A
244C-01,
b3b72S4
T-33-05
RF TV TRANSMITTER
tv transmitter amplifier circuit
arco 404
Arco 423
VHF transmitter circuit
arco 403
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EN5387
Abstract: VPS10S 101PC be432
Text: Ordering num ber : EN5307 Wide-Bandwidth Output Module video pack VPS10S sa/imi CRT Display Video Output Amplifier: High-Voltage, Wideband Amplification OFeatures Package Dimensions * H igh output voltage and wide b an d w id th m ake the VPS 1OS optim al for use in
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EN5387
VPS10S
15-pin
EN5387
VPS10S
101PC
be432
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MOTOROLA circuit for mrf150
Abstract: UNELCO MICA CAPACITORS motorola MRF150 mrf150 equivalent Unelco J101 BH Rf transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er F ield -E ffect Transistor MRF150 N-Channel Enhancement-Mode Designed primarily for linear large-signal output stages up to 150 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics
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MRF150
MRF150
MOTOROLA circuit for mrf150
UNELCO MICA CAPACITORS
motorola MRF150
mrf150 equivalent
Unelco J101
BH Rf transistor
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smd transistor AFQ 36
Abstract: P-TQ220-5-1 transistor c160 type TLE4270 smd transistor 7D QK55 TRANSISTOR T0220 AEP01922 AEP02172 Q67000-A9209
Text: fi235bD5 O O l b b l ? ATT S IEM EN S T L E 427 0 5-V Low -D ro p Fixed V o ltage R egulator Features Output voltage tolerance < ± 2 % Low-drop voltage Integrated overtemperature protection Reverse polarity protection Input voltage up to 42 V Overvoltage protection up to 65 V < 400 ms
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fi235b05
Q67000-A9209
P-TQ220-5-1
Q67000-A9243
P-T0220-5-2
Q67006-A9201
P-TQ220-5-8
0235bOS
P-T0220-5-8
smd transistor AFQ 36
P-TQ220-5-1
transistor c160
type TLE4270
smd transistor 7D
QK55
TRANSISTOR T0220
AEP01922
AEP02172
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2N6439
Abstract: BH Rf transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 60 W — 225-400 MHz CO N TR O LLE D " Q " B R O A D BA N D RF POWER TRANSISTOR NPN SILICO N RF POWER TRANSISTOR . , . designed p rim a rily fo r w id e b a n d large-signal o u tp u t a m p lifie r stages in the 2 2 5 -4 0 0 M H z fre q u e n c y range.
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Untitled
Abstract: No abstract text available
Text: S3E D FUJITSU LTD • 374T?5b QQDEBbü 3öb H F C A J r? Jan u ary 1992 E dition 1.0 ^ FUJITSU DATA S H E ET : MB4752A SUBSCRIBER LINE INTERFACE 1C DESCRIPTION The Fujitsu MB4752A is designad for PBX Private Branch Exchange , it has battery feed, supervision and 4-wire to 2-wire conversion functions.
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MB4752A
MB4752A
200ft
AV0009-921J1
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AGP 9805
Abstract: transistor SMD FLO 14 2222 031 capacitor philips smd transistor GY transistor smd bh smd transistor GY 740 PH smd transistor PH transistor bd139 transistor smd K2 PH BD139
Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T BLV862 UHF linear push-pull power transistor Product specification Supersedes data of 1997 Jan 08 File under Discrete Semiconductors, SC08a Philips Sem iconductors 1997 Oct 14 PHILIPS Philips Semiconductors Product specification
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BLV862
SC08a
127047/00/04/pp12
AGP 9805
transistor SMD FLO 14
2222 031 capacitor philips
smd transistor GY
transistor smd bh
smd transistor GY 740
PH smd transistor PH
transistor bd139
transistor smd K2
PH BD139
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