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    TRANSISTOR VCE 1000V 30A Search Results

    TRANSISTOR VCE 1000V 30A Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR VCE 1000V 30A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: AP30G100W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features VCES High speed switching Low Saturation Voltage VCE sat =3.0V@IC=30A Industry Standard TO-3P Package 1000V IC 30A C G C RoHS Compliant E


    Original     		PDF AP30G100W 30G100W

    transistor TO-3P Outline Dimensions

    Abstract: No abstract text available
    Text: AP30G100W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features VCES 1000V 30A IC ▼ High speed switching ▼ Low Saturation Voltage VCE sat =3.0V@IC=30A ▼ Industry Standard TO-3P Package C G G C ▼ RoHS Compliant


    Original     		PDF AP30G100W Fig11. 30G100W transistor TO-3P Outline Dimensions

    E80276

    Abstract: QM30TB-2H all transistor
    Text: MITSUBISHI TRANSISTOR MODULES QM30TB-2H MEDIUM POWER SWITCHING USE INSULATED TYPE QM30TB-2H • • • • • IC Collector current . 30A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 75


    Original     		PDF QM30TB-2H E80276 E80271 E80276 QM30TB-2H all transistor

    all transistor

    Abstract: qm30tb E80276 QM30TB-2HB QM30TB-2H QM30T
    Text: MITSUBISHI TRANSISTOR MODULES QM30TB-2HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM30TB-2HB • • • • • IC Collector current . 30A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 750


    Original     		PDF QM30TB-2HB E80276 E80271 all transistor qm30tb E80276 QM30TB-2HB QM30TB-2H QM30T

    QM30DY-2H

    Abstract: E80276 motor 28v dc dc ac power ups circuit diagram
    Text: MITSUBISHI TRANSISTOR MODULES QM30DY-2H MEDIUM POWER SWITCHING USE INSULATED TYPE QM30DY-2H • • • • • IC Collector current . 30A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 75


    Original     		PDF QM30DY-2H E80276 E80271 QM30DY-2H E80276 motor 28v dc dc ac power ups circuit diagram

    E80276

    Abstract: QM30HY-2H
    Text: MITSUBISHI TRANSISTOR MODULES QM30HY-2H MEDIUM POWER SWITCHING USE INSULATED TYPE QM30HY-2H • • • • • IC Collector current . 30A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 75


    Original     		PDF QM30HY-2H E80276 E80271 E80276 QM30HY-2H

    E80276

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM30E2Y/E3Y-2H MEDIUM POWER SWITCHING USE INSULATED TYPE QM30E2Y/E3Y-2H • • • • • IC Collector current . 30A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 75


    Original     		PDF QM30E2Y/E3Y-2H E80276 E80271 E80276

    transistor VCE 1000V

    Abstract: 2DI30Z-100 transistor VCEO 1000V Transistor AC 125 transistor transistor VCE 1000V 30A
    Text: 2DI30Z-100 30A FUJI POWER TRANSISTOR MODULE パワートランジスタモジュール POWER TRANSISTOR MODULE 外形寸法 : Outline Drawings 外形寸法: 特長 ：Features 特長： 高耐圧 High Voltage 内蔵 Including Tree Wheeling Diode ﾌﾘｰﾎｲﾘﾝｸﾞﾀﾞｲｵｰﾄﾞ内蔵


    Original     		PDF 2DI30Z-100 transistor VCE 1000V 2DI30Z-100 transistor VCEO 1000V Transistor AC 125 transistor transistor VCE 1000V 30A

    10205 transistor

    Abstract: all transistor E80276 QM50TB-2H
    Text: MITSUBISHI TRANSISTOR MODULES QM50TB-2H MEDIUM POWER SWITCHING USE INSULATED TYPE QM50TB-2H • • • • • IC Collector current . 50A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 75


    Original     		PDF QM50TB-2H E80276 E80271 10205 transistor all transistor E80276 QM50TB-2H

    QM50TB-2HB

    Abstract: E80276 all transistor
    Text: MITSUBISHI TRANSISTOR MODULES QM50TB-2HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM50TB-2HB • • • • • IC Collector current . 50A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 750


    Original     		PDF QM50TB-2HB E80276 E80271 100mA QM50TB-2HB E80276 all transistor

    QM75DY-2H

    Abstract: E80276
    Text: MITSUBISHI TRANSISTOR MODULES QM75DY-2H HIGH POWER SWITCHING USE INSULATED TYPE QM75DY-2H • • • • • IC Collector current . 75A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 75


    Original     		PDF QM75DY-2H E80276 E80271 QM75DY-2H E80276

    QM50DY-2HB

    Abstract: TRANSISTOR TC 100 E80276 transistor VCE 1000V
    Text: MITSUBISHI TRANSISTOR MODULES QM50DY-2HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM50DY-2HB • • • • • IC Collector current . 50A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 750


    Original     		PDF QM50DY-2HB E80276 E80271 100mA QM50DY-2HB TRANSISTOR TC 100 E80276 transistor VCE 1000V

    QM50HY-2H

    Abstract: transistor VCE 1000V E80276
    Text: MITSUBISHI TRANSISTOR MODULES QM50HY-2H MEDIUM POWER SWITCHING USE INSULATED TYPE QM50HY-2H • • • • • IC Collector current . 50A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 75


    Original     		PDF QM50HY-2H E80276 E80271 QM50HY-2H transistor VCE 1000V E80276

    EV1277

    Abstract: EV-127 transistor VCEO 1000V
    Text: EV1277 30A FUJI POWER TRANSISTOR MODULE パワートランジスタモジュール POWER TRANSISTOR MODULE 外形寸法 : Outline Drawings 外形寸法: 特長 ：Features 特長： 高耐圧 高耐圧 High Voltage 内臓 Including Free Wheeling Diode


    Original     		PDF EV1277 25to30k EV1277 EV-127 transistor VCEO 1000V

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. AP30G100W-HF-3 N-Channel Insulated Gate Bipolar Power Transistor VCES 1000V High Speed Switching C Low Saturation Voltage 30A IC Typical V CE sat = 3.0V at IC=30A G Industry-standard TO-3P C C RoHS-compliant, halogen-free


    Original     		PDF AP30G100W-HF-3 100oC AP30G100 30G100W

    1000V 20A transistor

    Abstract: 2DI30D-100 transistor VCEO 1000V
    Text: 2DI30D-100 30A FUJI POWER TRANSISTOR MODULE パワートランジスタモジュール POWER TRANSISTOR MODULE 外形寸法 : Outline Drawings 外形寸法: 特長 ：Features 特長： 大電流 High Current が高い High DC Current Gain hFE が高い


    Original     		PDF 2DI30D-100 25to30IC 1000V 20A transistor 2DI30D-100 transistor VCEO 1000V

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM30HY-2H MEDIUM POWER SWITCHING USE INSULATED TYPE Q M 30HY-2H Ic Collector current. 30A Vcex Collector-emitter voltage 1000V hFE DC current gain. 75 Insulated Type UL Recognized


    OCR Scan     		PDF QM30HY-2H 30HY-2H E80276 E80271

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM30TB-2H MEDIUM POWER SWITCHING USE INSULATED TYPE QM30TB-2H Ic Collector current. 30A Vcex Collector-emitter voltage 1000V hFE DC current gain. 75 Insulated Type UL Recognized


    OCR Scan     		PDF QM30TB-2H E80276 E80271

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM30DY-2H MEDIUM POWER SWITCHING USE INSULATED TYPE Q M 30DY-2H Ic Collector current. 30A Vcex Collector-emitter voltage 1000V hFE DC current gain. 75 Insulated Type UL Recognized


    OCR Scan     		PDF QM30DY-2H 30DY-2H E80276 E80271

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM30TB-2HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM30TB-2HB >«8 Ic Collector current. 30A Vcex Collector-emitter voltage 1000V hFE DC current gain.750 Insulated Type UL Recognized


    OCR Scan     		PDF QM30TB-2HB E80276 E80271

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES j QM30E2Y/ E3Y-2H ¡ MEDIUM POWER SWITCHING USE INSULATED TYPE QM30E2Y/E3Y-2H • lc • V C EX Collector current. 30A Collector-emitter voltage. 1000V DC current gain. 75


    OCR Scan     		PDF QM30E2Y/ QM30E2Y/E3Y-2H E80276 E80271

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM30E2Y/E3Y-2H MEDIUM POWER SWITCHING USE INSULATED TYPE Q M 30E 2Y /E3Y-2H Ic Collector current. 30A Vcex Collector-emitter vo ltag e 1000V hFE DC current gain. 75 Insulated Type


    OCR Scan     		PDF QM30E2Y/E3Y-2H E80276 E80271

    Untitled

    Abstract: No abstract text available
    Text: fOMEREX Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 KD221K03 Dual Darlington Transistor Module 30 Amperes/1000 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Storage Temperature


    OCR Scan     		PDF KD221K03 Amperes/1000 KD221KD3

    102 TRANSISTOR

    Abstract: KD221 KD221K03 VC80 X1000
    Text: m M B E X KD221K03 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 D U d l D d r lin Q t O H Transistor Module 30 Amperes/1000 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use


    OCR Scan     		PDF KD221 Amperes/1000 EIC20- 102 TRANSISTOR KD221K03 VC80 X1000