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    TRANSISTOR VCB 3V Search Results

    TRANSISTOR VCB 3V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR VCB 3V Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N5401

    Abstract: 2n5401 application
    Text: SEMICONDUCTOR 2N5401 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C A FEATURES ᴌHigh Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V N E K ᴌLow Leakage Current. : ICBO=-50nA Max. @VCB=-120V


    Original     		2N5401 -160V, -150V -50nA -120V -50mA, -10mA, 100MHz 2N5401 2n5401 application PDF

    NTE161

    Abstract: No abstract text available
    Text: NTE161 Silicon NPN Transistor VHF–UHF Amplifier, Mixer/Osc Features: D High Current Gain–Bandwidth Product: fT = 600MHz Min @ f = 100MHz D Low Output Capacitance: Cob = 1.7pF (Max) @ VCB = 10V Absolute Maximum Ratings: Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V


    Original     		NTE161 600MHz 100MHz 100MHz, 140kHz 60MHz 200MHz 500MHz NTE161 PDF

    2N5400

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N5400 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C A FEATURES ᴌHigh Collector Breakdwon Voltage : VCBO=-130V, VCEO=-120V N E K ᴌLow Leakage Current. : ICBO=-100nA Max. @VCB=-100V


    Original     		2N5400 -130V, -120V -100nA -100V -50mA, -10mA, 100MHz 2N5400 PDF

    2N5401C

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N5401C TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C A FEATURES ᴌHigh Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V N E K ᴌLow Leakage Current. : ICBO=-50nA Max. @VCB=-120V


    Original     		2N5401C -160V, -150V -50nA -120V -50mA, -10mA, 100MHz 2N5401C PDF

    NTE161

    Abstract: No abstract text available
    Text: NTE161 Silicon NPN Transistor VHF–UHF Amplifier, Mixer/Osc Features: D High Current Gain–Bandwidth Product: fT = 600MHz Min @ f = 100MHz D Low Output Capacitance: Cob = 1.7pF (Max) @ VCB = 10V Absolute Maximum Ratings: Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V


    Original     		NTE161 600MHz 100MHz 100MHz, 140kHz 60MHz 200MHz 500MHz NTE161 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N5400 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C A FEATURES ・High Collector Breakdwon Voltage : VCBO=-130V, VCEO=-120V N E K ・Low Leakage Current. G : ICBO=-100nA Max. @VCB=-100V


    Original     		2N5400 -130V, -120V -100nA -100V -50mA, Coll-10mA, -10mA, 100MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N5401 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C A FEATURES ・High Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V N E K ・Low Leakage Current. G : ICBO=-50nA Max. @VCB=-120V


    Original     		2N5401 -160V, -150V -50nA -120V -50mA, 150itter -120V, -10mA PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N5400 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C A FEATURES High Collector Breakdwon Voltage : VCBO=-130V, VCEO=-120V N E K Low Leakage Current. G D J : ICBO=-100nA Max. @VCB=-100V


    Original     		2N5400 -130V, -120V -100nA -100V -50mA, -100V, -10mA -50mA PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N5401C TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C A FEATURES High Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V N E K Low Leakage Current. G D J : ICBO=-50nA Max. @VCB=-120V


    Original     		2N5401C -160V, -150V -50nA -120V -50mA, -10mA, 100MHz PDF

    2N3904N

    Abstract: 2N3906N T0-92N 2N3906 2N3906 PNP transistor
    Text: 2N3906N Semiconductor PNP Silicon Transistor Descriptions • General small signal application • Switching application Features • Low collector-emitter saturation voltage : 0.4V Max. @ IC=-50mA, IB=-5mA • Low collector output capacitance : 4.5pF (Max.) @ VCB=-5V, IE=0, f=1MHz


    Original     		2N3906N -50mA, 2N3904N 2N3906 T0-92N KSD-T0C039-000 2N3904N 2N3906N T0-92N 2N3906 2N3906 PNP transistor PDF

    2N5401C

    Abstract: IC-250
    Text: SEMICONDUCTOR 2N5401C TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C A FEATURES High Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V N E K Low Leakage Current. G D J : ICBO=-50nA Max. @VCB=-120V


    Original     		2N5401C -160V, -150V -50nA -120V -50mA, -120V, -10mA -50mA 2N5401C IC-250 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N5400 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C A FEATURES High Collector Breakdwon Voltage : VCBO=-130V, VCEO=-120V N E K Low Leakage Current. G D J : ICBO=-100nA Max. @VCB=-100V


    Original     		2N5400 -130V, -120V -100nA -100V -50mA, -10mA, 100MHz PDF

    b2n5401

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N5401 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C A FEATURES High Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V N E K Low Leakage Current. G D J : ICBO=-50nA Max. @VCB=-120V


    Original     		2N5401 -160V, -150V -50nA -120V -50mA, -120V, -10mA -50mA b2n5401 PDF

    2N3904N

    Abstract: 2N3904 tr 2n3904
    Text: 2N3904N Semiconductor NPN Silicon Transistor Descriptions • General small signal application • Switching application Features • Low collector saturation voltage : VCE sat =0.3V(MAX.) @ IC=50mA, IB=5mA • Low collector output capacitance : Cob = 3pF(Typ.) @ VCB=5V, IE=0, f=1MHz


    Original     		2N3904N STA3906A 2N3904 O-92N KSD-T0C036-000 2N3904N 2N3904 tr 2n3904 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2N4124 Transistor Unit in m m Silicon NPN Epitaxial Type & 1UAX. For General Purpose Switching and Amplifier Applications Features • Low Leakage Current - ICB0 = 5 0 nA Max. @ VCB = 20V - IEB0 = 50nA (Max.) @ VEB = 3V • Low Saturation Voltage


    OCR Scan     		2N4124 100pA, PDF

    2N5401

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA 2N5401 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • High Collector Breakdwon Voltage : V Cbo= -160V , V Ceo= -150V • Low Leakage Current. : IcBo=-50nA Max. , @ VCb= -120V


    OCR Scan     		2N5401 -160V, -150V -50nA -50mA, -10JUA, -10mA -50mA -10mA, 2N5401 PDF

    Untitled

    Abstract: No abstract text available
    Text: KSA1142 PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER HIGH FREQENCY POWER AMPLIFIER TO-126 • Complement to KSC2682 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage Characteristic VcB O Symbol - 180 V Collector-Emitter Voltage


    OCR Scan     		KSA1142 KSC2682 O-126 PDF

    2N5400

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA 2N5400 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • High Collector Breakdwon Voltage : VCbo=-130V, VCeo=-120V • Low Leakage Current. : IcBo=-100nA Max. @VCB=-100V • Low Saturation Voltage


    OCR Scan     		2N5400 -130V, -120V -100V -50mA, -10JUA, -10mA -50mA -10mA, 2N5400 PDF

    Untitled

    Abstract: No abstract text available
    Text: KSA1220/1220A PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER HIGH FREQUENCY POWER AMPLIFIER TO -126 • Complement to KSC2690/KSC2690A ABSOLUTE MAXIMUM RATINGS C haracteristic Collector-Base Voltage Symbol : KAS1220 VcB O : KAS1220A Collector-Emitter Voltage


    OCR Scan     		KSA1220/1220A KSC2690/KSC2690A KAS1220 KAS1220A PDF

    Untitled

    Abstract: No abstract text available
    Text: KSD794/794A NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER • Complement to KSB744/KSB744A TO -126 ABSOLUTE MAXIMUM RATINGS C haracteristic Symbol Rating Unit Collector- Base Voltage VcB O 70 V Collector-Emitter Voltage : KSD794 VcEO 45


    OCR Scan     		KSD794/794A KSB744/KSB744A KSD794 KSD794A PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA 2N5401 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • High Collector Breakdwon Voltage : V cbo=-160V, V ceo=-150V • Low Leakage Current. : ICbo= -50nA Max. @VCB=-120V • Low Saturation Voltage


    OCR Scan     		2N5401 -160V, -150V -50nA -120V -50mA, -120V, -10mA PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2N5400 Transistor Silicon PNP Epitaxial Type For General Purpose Switching and Amplifier Applications Features • High Collector Breakdown Voltage “ Vcbo = -130V, VCE0 = -120V • Low Leakage Current - ICB0 = -1 OOnA Max. @ VCB = -100V • Low Saturation Voltage


    OCR Scan     		2N5400 -130V, -120V -100V -50mA, PDF

    2N4124

    Abstract: No abstract text available
    Text: TOSHIBA TRANSISTOR 2N4124 SILICON NPN EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: . Low Leakage Current : ICBO*50nA(Max.) lEBO“50nA(Max.) @ Vcb =20V (3 Ve B“3V . Low Saturation Voltage : vCE(sat)=0.3V(Max.)


    OCR Scan     		2N4124 2N4126 100MHz 2N4124 PDF

    Untitled

    Abstract: No abstract text available
    Text: Lf5E D ITOS H ^0^7250 001775^ 0 TOSHIBA TRANSISTOR 2N4126 SILICON PNP EPITAXIAL TYPE PCT PROCESS 'T TOSHIBA (DISCRETE/OPTO) Unit in mm FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: . Low Leakage Current : IcBO=“50nA(Max.) @ VcB*-20V


    OCR Scan     		2N4126 -50toA, 2N4124 -50mA, -10mA, 100MHz PDF