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    TRANSISTOR VBE 1 Search Results

    TRANSISTOR VBE 1 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR VBE 1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Harris CA3046

    Abstract: an5296 d143 T transistor CA3045 HARRIS AN5296 application note ca3046 CA3046 equivalent CA3045 CA3045F CA3046 Harris
    Text: CA3045, CA3046 S E M I C O N D U C T O R General Purpose NPN Transistor Arrays November 1996 Features Description • Two Matched Transistors - VBE Match . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±5mV - IIO Match . . . . . . . . . . . . . . . . . . . . . . . . . . . 2µA Max


    Original     		PDF CA3045, CA3046 CA3045 CA3046 1-800-4-HARRIS Harris CA3046 an5296 d143 T transistor CA3045 HARRIS AN5296 application note CA3046 equivalent CA3045F CA3046 Harris

    ZTX849

    Abstract: NPN 200 VOLTS 20 Amps POWER TRANSISTOR DSA003777
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX849 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) MIN. TYP. MAX. UNIT CONDITIONS. 850 950 mV IC=5A, VCE=1V* Static Forward Current Transfer Ratio


    Original     		PDF ZTX849 100mA, 50MHz 100mA 100ms ZTX849 NPN 200 VOLTS 20 Amps POWER TRANSISTOR DSA003777

    ZTX949

    Abstract: DSA003779
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX949 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) MIN. TYP. MAX. UNIT CONDITIONS. -860 -1000 mV IC=-5A, VCE=-1V* Static Forward Current Transfer Ratio


    Original     		PDF ZTX949 -100mA, 50MHz -400mA 400mA, -10mA, 100ms ZTX949 DSA003779

    ztx953

    Abstract: IN 3319 B DSA003779
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX953 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer hFE MIN. TYP. MAX. UNIT CONDITIONS. -880 -1100 mV IC=-4A, VCE=-1V*


    Original     		PDF ZTX953 -10mA, 100ms ztx953 IN 3319 B DSA003779

    DMMT3906W

    Abstract: DMMT3906W-7 J-STD-020A
    Text: DMMT3906W MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR • · · · · Epitaxial Planar Die Construction Intrinsically Matched PNP Pair Note 1 Small Surface Mount Package 2% Matched Tolerance, hFE, VCE(SAT), VBE(SAT) 1% Matched Tolerance Available (Note 2)


    Original     		PDF DMMT3906W OT-363 OT-363, J-STD-020A MIL-STD-202, DS30312 DMMT3906W DMMT3906W-7 J-STD-020A

    ZTX957

    Abstract: TO-1 amps pnp transistor DSA003780
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX957 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) MIN. TYP. MAX. UNIT CONDITIONS. -710 -850 mV IC=-1A, VCE=-10V* Static Forward Current Transfer Ratio


    Original     		PDF ZTX957 -100mA, 50MHz -500mA, -50mA -100V -10mA, 100ms ZTX957 TO-1 amps pnp transistor DSA003780

    ZTX851

    Abstract: DSA003778
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX851 ELECTRICAL CHARACTERISTICS at Tamb = 25°C MIN. TYP. MAX. UNIT CONDITIONS. 840 950 mV IC=4A, VCE=1V* PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio


    Original     		PDF ZTX851 100mA, 50MHz 100mA 100ms ZTX851 DSA003778

    ZTX869

    Abstract: PS 307 5A DSA003778
    Text: ZTX869 ELECTRICAL CHARACTERISTICS at Tamb = 25°C MIN. TYP. MAX. UNIT CONDITIONS. 800 900 mV IC=5A, VCE=1V* NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio


    Original     		PDF ZTX869 100mA, 50MHz 100mA 100ms ZTX869 PS 307 5A DSA003778

    oscillator pnp 800MHZ

    Abstract: NTE160 "PNP Transistor" transistor germanium Germanium power
    Text: NTE160 Germanium PNP Transistor RF–IF Amp, FM Mixer OSC Description: The NTE160 is a germanium mesa PNP transistor in a TO72 metal case designed for use as a preamplifier mixer and oscillator up to 900MHz. Absolute Maximum Ratings: Collector–Emitter Voltage VBE = 0 , VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V


    Original     		PDF NTE160 NTE160 900MHz. 100MHz 450kHz 800MHz oscillator pnp 800MHZ "PNP Transistor" transistor germanium Germanium power

    ZTX855

    Abstract: VCB-200V DSA003778
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX855 ELECTRICAL CHARACTERISTICS at Tamb = 25°C MIN. TYP. MAX. UNIT CONDITIONS. 0.88 1 V IC=4A, VCE=5V* PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio


    Original     		PDF ZTX855 100mA, 50MHz 100mA Am100 100ms ZTX855 VCB-200V DSA003778

    part MARKING k4a

    Abstract: marking code e2 MARKING k4a DMMT3904W DMMT3904W-7 DMMT3904W-7-F J-STD-020A
    Text: DMMT3904W MATCHED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR SPICE MODEL: DMMT3904W NEW PRODUCT Features • · · · · · Epitaxial Planar Die Construction Intrinsically Matched NPN Pair Note 1 Small Surface Mount Package 2% Matched Tolerance, hFE, VCE(SAT), VBE(SAT)


    Original     		PDF DMMT3904W OT-363 OT-363, J-STD-020A MIL-STD-202, DS30311 part MARKING k4a marking code e2 MARKING k4a DMMT3904W DMMT3904W-7 DMMT3904W-7-F J-STD-020A

    ZTX948

    Abstract: DSA003779
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX948 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio hFE MIN. TYP. MAX. UNIT CONDITIONS. -860 -1000 mV IC=-5A, VCE=-1V*


    Original     		PDF ZTX948 -10mA, -100mA, 50MHz -400mA 400mA, 100ms ZTX948 DSA003779

    DMMT3906W

    Abstract: DMMT3906W-7-F
    Text: SPICE MODEL: DMMT3906W DMMT3906W MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR • · · · · · · Epitaxial Planar Die Construction Intrinsically Matched PNP Pair Note 1 Small Surface Mount Package SOT-363 A 2% Matched Tolerance, hFE, VCE(SAT), VBE(SAT)


    Original     		PDF DMMT3906W OT-363 AEC-Q101 DS30312 DMMT3906W DMMT3906W-7-F

    Untitled

    Abstract: No abstract text available
    Text: 2SC4130 Silicon NPN Epitaxial Planar Transistor High Voltage and High Speed Switchihg Transistor 2 PC 30(Tc=25°C) Tj V hFE VCE=4V, IC=3A 10 to 30 A VCE(sat) IC=3A, IB=0.6A 0.5max W VBE(sat) IC=3A, IB=0.6A 1.3max V 150 °C fT VCE=12V, IE=–0.5A 15typ MHz


    Original     		PDF 2SC4130 Pulse14) O220F) 100max 400min 15typ 50typ

    DMMT3906W

    Abstract: DMMT3906W-7 DMMT3906W-7-F J-STD-020A
    Text: SPICE MODEL: DMMT3906W DMMT3906W MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR • · · · · · Epitaxial Planar Die Construction Intrinsically Matched PNP Pair Note 1 Small Surface Mount Package 2% Matched Tolerance, hFE, VCE(SAT), VBE(SAT) 1% Matched Tolerance Available (Note 2)


    Original     		PDF DMMT3906W OT-363 OT-363, J-STD-020A MIL-STD-202, DS30312 DMMT3906W DMMT3906W-7 DMMT3906W-7-F J-STD-020A

    KSD5079

    Abstract: NPN Transistor 8A
    Text: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5079 TO-3PF COLOR TV HORIZONTAL OUTPUT APPLICATIONS NO DAMPER DIODE ABSOLUTE MAXIMUM RATINGS (TA=25°C) Characteristic Collector - Base Voltage(VBE=0) Collector - Emitter Voltage Emitter - Base Voltage Collector Current (DC)


    Original     		PDF KSD5079 KSD5079 NPN Transistor 8A

    2N558B

    Abstract: 2N3S49 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3848 2N4002
    Text: General Transistor Corporation CASE TO-63 le max = 20 to 60A V c e o (su s) NPN Power Transistors Typ*No. VCEO (•!*) <v) IC (mu) (A) hFE&C/VCE (min-mi* Q AY) VCE(SAT) QIC/IB (V0A/A) VBE ic/vce (V©A/V) VBE (SAT) ©OB (V0A/V) 2N1936 2N1937 2N3265


    OCR Scan     		PDF 0-300V 2N1936 2N1937 2N3265 2N3266 2N5250 2N5251 2N5489 2N5587 2N558B 2N558B 2N3S49 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3848 2N4002

    LM394BN

    Abstract: SSM2210P SMM210 OP-97 SSM-2210 T010 Oscilloscope Wideband preamplifier 40nV cascode miller capacitance
    Text: Audio Dual Matched NPN Transistor SSM-2210 ANALOG DEVICES FEATURES • Very Low Voltage N o is e @ 100Hz, InV/VHz MAX • Excellent Current Gain Match.0.5% TYP • Tight VBE Match VQS . 200^V MAX


    OCR Scan     		PDF SSM-2210 100Hz, 200HV 03hV/Â 200MHz LM394BN/CN SSM-2210 LM394BN SSM2210P SMM210 OP-97 T010 Oscilloscope Wideband preamplifier 40nV cascode miller capacitance

    2N4403

    Abstract: No abstract text available
    Text: TOSHIBA 2N4403 Transistor Silicon PNP Epitaxial Type For General Purpose Switching and Amplifier Applications Features • Low Leakage Current - ICEV = -100nA Max. , IBEV = 100nA (Max.) @ VCE = -35V, VBE = 0.4V • Excellent DC Current Gain Linearity • Low Saturation Voltage


    OCR Scan     		PDF 2N4403 -100nA 100nA -150mA, -15mA 2N4401 X10-4 2N4403

    cascode miller capacitance

    Abstract: ka band transistor
    Text: Audio Dual Matched NPN Transistor SSM-2210 ANALOG DEVICES FEATURES • • • • • • • Very Low Voltage N o is e @ 100Hz, InV/VHz MAX Excellent Current Gain Match.0.5% TYP Tight VBE Match VQS . 200^V MAX


    OCR Scan     		PDF 100Hz, 200MHz LM394BN/CN SSM-2210 SSM-2210 cascode miller capacitance ka band transistor

    2N4401

    Abstract: No abstract text available
    Text: TOSHIBA 2N4401 Transistor Silicon NPN Epitaxial Type For General Purpose Switching and Amplifier Applications Features • Low Leakage Current " Iqev = ^ OOnA Max. , Ig[ry —-100nA (Max.) @ VCE = 35V, VBE = -0.4V • Excellent DC Current Gain Linearity • Low Saturation Voltage


    OCR Scan     		PDF 2N4401 ---100nA 150mA, 2N4403 2N4401

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE TO-66 lc MAX = 1-5A VcEO(SUS) • 40-425V PNP Power Transistors NPN Typ. No. 2N3740 2N3740A 2N3741 2N3741A 2N4898 2N4899 2N4900 2N5344 coinplMMnl 2N3766 2N3767 2N4910 2N4911 2N4912 (A) VCE(SAT) 0IC/IB (V0A/A) VBE IOVCE


    OCR Scan     		PDF 0-425V 2N3740 2N3740A 2N3741 2N3741A 2N4898 2N4899 2N4900 2N5344 2N3766

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA YTS39Q6 Transistor Unit in mm Silicon PNP Epitaxial Type For General Purpose Switching and Amplifier Applications Features • Low Leakage Current - ICEV = -50nA Max. , Ibev = 50nA (Max.) - @ VCE = -30V, VBE = -3V • Excellent DC Current Gain Linearity


    OCR Scan     		PDF YTS39Q6 -50nA -50mA, YTS3904

    YTS3904

    Abstract: No abstract text available
    Text: TO SHIBA YTS3904 Transistor Unit in mm Silicon NPN Epitaxial Type For General Purpose Switching and Amplifier Applications Features • Low Leakage Current - Iqev = 50nA Max. , Ibev = 50nA (Max.) - @ VCE = 30V, VBE = 3V • Excellent DC Current Gain Linearity


    OCR Scan     		PDF YTS3904 YTS3906 300ns 1C19V YTS3904