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    TRANSISTOR V75 Search Results

    TRANSISTOR V75 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR V75 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor marking v75 ghz

    Abstract: LNB ku band NE3503M04-T2B NE3503M04 NE3503M04-A HS350
    Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3503M04 C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain <R> NF = 0.45 dB TYP., Ga = 12.0 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz


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    PDF NE3503M04 NE3503M04 NE3503M04-T2 NE3503M04-T2B NE3503M04-A NE3503M04-T2-A NE3503M04-T2B-A PG10456EJ03V0DS transistor marking v75 ghz LNB ku band HS350

    transistor marking v75 ghz

    Abstract: nec microwave transistor v75 NE3503M04-A HS350 NE3503M04 NE3503M04-T2 NE3503M04-T2-A LNB ku band V75 marking
    Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3503M04 C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain <R> NF = 0.45 dB TYP., Ga = 12.0 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz


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    PDF NE3503M04 NE3503M04-A NE3503M04-T2 NE3503M04-T2-A NE3503M04-T2B NE3503M04-T2B-A transistor marking v75 ghz nec microwave transistor v75 NE3503M04-A HS350 NE3503M04 NE3503M04-T2 NE3503M04-T2-A LNB ku band V75 marking

    TLP358H

    Abstract: 11-10C4S TLP358
    Text: TLP358H Photocouplers GaAℓAs Infrared LED & Photo IC TLP358H 1. Applications • Transistor Inverters • MOSFET Gate Drivers • IGBT Gate Drivers • Induction Cooktop and Home Appliances 2. General The TLP358H is a photocoupler in a DIP8 package that consists of a GaAℓAs infrared light-emitting diode LED


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    PDF TLP358H TLP358H 11-10C4S TLP358

    Untitled

    Abstract: No abstract text available
    Text: TLP358HF Photocouplers GaAℓAs Infrared LED & Photo IC TLP358HF 1. Applications • Transistor Inverters • MOSFET Gate Drivers • IGBT Gate Drivers • Induction Cooktop and Home Appliances 2. General The TLP358HF is a photocoupler in a DIP8 package that consists of a GaAℓAs infrared light-emitting diode LED


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    PDF TLP358HF TLP358HF TLP358H.

    TLP358

    Abstract: No abstract text available
    Text: TLP358F Photocouplers GaAℓAs Infrared LED & Photo IC TLP358F 1. Applications • Transistor Inverters • MOSFET Gate Drivers • IGBT Gate Drivers • Induction Cooktop and Home Appliances 2. General The TLP358F is a photocoupler in a DIP8 package that consists of a GaAℓAs infrared light-emitting diode LED


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    PDF TLP358F TLP358F TLP358. TLP358

    transistor marking v75 ghz

    Abstract: nec microwave Ku BAND SUPER LOW NOISE type c NE3503M04 NE3503M04-A NE3503M04-T2 HS350 NE3503M04-T2-A V75 4pin
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3503M04 C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain <R> NF = 0.45 dB TYP., Ga = 12.0 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz


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    PDF NE3503M04 NE3503M04-A NE3503M04-T2 NE3503M04-T2-A NE3503M04-T2B NE3503M04-T2B-A transistor marking v75 ghz nec microwave Ku BAND SUPER LOW NOISE type c NE3503M04 NE3503M04-A NE3503M04-T2 HS350 NE3503M04-T2-A V75 4pin

    TLP358H

    Abstract: No abstract text available
    Text: TLP358HF Photocouplers GaAℓAs Infrared LED & Photo IC TLP358HF 1. Applications • Transistor Inverters • MOSFET Gate Drivers • IGBT Gate Drivers • Induction Cooktop and Home Appliances 2. General The TLP358HF is a photocoupler in a DIP8 package that consists of a GaAℓAs infrared light-emitting diode LED


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    PDF TLP358HF TLP358HF TLP358H. TLP358H

    TLP358

    Abstract: No abstract text available
    Text: TLP358 Photocouplers GaAℓAs Infrared LED & Photo IC TLP358 1. Applications • Transistor Inverters • MOSFET Gate Drivers • IGBT Gate Drivers • Induction Cooktop and Home Appliances 2. General The TLP358 is a photocoupler in a DIP8 package that consists of a GaAℓAs infrared light-emitting diode LED


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    PDF TLP358 TLP358

    microwave office

    Abstract: transistor marking v75 ghz nec microwave
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3503M04 C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.55 dB TYP., Ga = 11.5 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz


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    PDF NE3503M04 NE3503M04 NE3503M04-T2 NE3503M04-A NE3503M04-T2-A NE3503M04-T2B-A microwave office transistor marking v75 ghz nec microwave

    transistor marking v75 ghz

    Abstract: transistor v75
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3503M04 C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.55 dB TYP., Ga = 11.5 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz


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    PDF NE3503M04 NE3503M04 NE3503M04-T2 transistor marking v75 ghz transistor v75

    transistor marking v75 ghz

    Abstract: NE3503M04 PG10456EJ01V1DS HS350 NE3503M04-T2 nec marking power amplifier nec microwave m04 marking NE3503
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3503M04 C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.55 dB TYP., Ga = 11.5 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz


    Original
    PDF NE3503M04 NE3503M04-T2 transistor marking v75 ghz NE3503M04 PG10456EJ01V1DS HS350 NE3503M04-T2 nec marking power amplifier nec microwave m04 marking NE3503

    Untitled

    Abstract: No abstract text available
    Text: TLP358H Photocouplers GaAℓAs Infrared LED & Photo IC TLP358H 1. Applications • Transistor Inverters • MOSFET Gate Drivers • IGBT Gate Drivers • Induction Cooktop and Home Appliances 2. General The TLP358H is a photocoupler in a DIP8 package that consists of a GaAℓAs infrared light-emitting diode LED


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    PDF TLP358H TLP358H

    induction cooker schematic diagram

    Abstract: schematic diagram dc-ac welding inverter igbt schematic diagram induction cooker relay 3500 2231 021 schematic diagram ac-dc welding inverter CIRCUIT CD4050 ic 16 pin diagram schematic diagram igbt inverter welding machine PLC ELEVATOR CONTROL sewing machine foot controller schematic diagram dc-ac welding inverter CIRCUIT
    Text: Optoisolation Products Selection Catalog Optoisolation Products 5 Multi-Channel & Bi-Directional Digital Optocoupler 6 High Speed Digital CMOS Logic Gate Optocoupler 7 20 MBd Logic Gate Optocoupler 8 10 MBd Logic Gate Optocoupler 10 8 MBd Logic Gate Optocoupler


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    PDF AV00-0051EN AV00-0107EN induction cooker schematic diagram schematic diagram dc-ac welding inverter igbt schematic diagram induction cooker relay 3500 2231 021 schematic diagram ac-dc welding inverter CIRCUIT CD4050 ic 16 pin diagram schematic diagram igbt inverter welding machine PLC ELEVATOR CONTROL sewing machine foot controller schematic diagram dc-ac welding inverter CIRCUIT

    IDT8N4S270

    Abstract: Marking code mps
    Text: IDT8N4S270 LVDS Frequency-Programmable Crystal Oscillator DATASHEET General Description Features The IDT8N4S270 is a Factory Frequency-Programmable Crystal Oscillator with very flexible frequency programming capabilities. The device uses IDT’s fourth generation FemtoClock NG technology for


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    PDF IDT8N4S270 IDT8N4S270 476MHz 67MHz 975MHz 300MHz 218Hz Marking code mps

    IDT8N4DV85

    Abstract: No abstract text available
    Text: LVDS Dual-Frequency Programmable VCXO IDT8N4DV85 DATASHEET General Description Features The IDT8N4DV85 is a LVDS Dual-Frequency Programmable VCXO with very flexible frequency and pull-range programming capabilities. The device uses IDT’s fourth generation FemtoClock NG


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    PDF IDT8N4DV85 IDT8N4DV85 476MHz

    494c

    Abstract: N1206-02 Marking code mps IDT8N4DV85
    Text: LVDS Dual-Frequency Programmable VCXO IDT8N4DV85 DATA SHEET General Description Features The IDT8N4DV85 is a LVDS Dual-Frequency Programmable VCXO with very flexible frequency and pull-range programming capabilities. The device uses IDT’s fourth generation FemtoClock NG


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    PDF IDT8N4DV85 IDT8N4DV85 476MHz 67MHz 975MHz 218Hz 494c N1206-02 Marking code mps

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    M54521P

    Abstract: DARLINGTON SINK DRIVER Mitsubishi darlington m54521
    Text: b3E • b24Tfl27 QQm ci7S 2DD « H I T 3 "'T S U B IS H I BIPOLAR DIGITAL 1C, MITSUBISHI M 54521P D6TL LOGIC 5-UNIT 500mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION The M54521P, 5-channel sink driver, consists of 10 NPN tran­ sistors connected to form high current gain driver pairs.


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    PDF M54521P 500mA M54521P, 500mA M54521P MS4521P -75-C- DARLINGTON SINK DRIVER Mitsubishi darlington m54521

    2N1051

    Abstract: 2w105 2w1051 D 1414 transistor
    Text: M IL -S-19-.00/216A NAVY 28 April 1969 SUPERSED IN G M IL -S-19500/216(NAVY) 9 N o v e m b e r 1 *3 1 M ILIT A R Y SPEC IFIC A TIO N SEMICONDUCTOR D EV IC E. TRANSISTOR, NPN, SILIC G n T Y PE 2N1051 « AAAflB 1* o w v n 1.1 Scope. This specification covers the detail requirem ents lo r silicon,


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    PDF -19100/216A 2N1051 MIL-STD-750 MDL-S-19500, MIL-8-19500 5961-H179J 2N1051 2w105 2w1051 D 1414 transistor

    TFK 404

    Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
    Text: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317


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    PDF 20nttc* 10N12* TFK 404 T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09

    2n3773 power Amplifier circuit diagrams

    Abstract: 10000 watt stabilizer transformer winding formula 2N3773 audio amplifier diagram lm380 equivalent LM566 "direct replacement" LM1820 LM1800 schematic diagram audio power amplifier using 2n3055 mc1349 GS 358S
    Text: Volume 2 National P R E F A C E The second volum e o f N a tio n a l's Linear A p p lic a tio n s h a n d b o o k picks up w here V o lu m e I le ft o ff. Data sheets, a p p lic a tio n briefs and p e rtin e n t articles published in th e 3 years since V o lu m e I was p rin te d are


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    PDF

    ZN 3055 transistor

    Abstract: Transistor w1l 7805 TO-220 V7233 5241E V7331 V5237B V-5240-k mk 5373 V7622
    Text: ASSMANN Technical Data & Abbreviations Electronic C om ponen ts Al Surface nature AI203 Aluminiumoxyd Al Mg Si 0,5 Special aluminium alloy {extruded Al 99,5 Special aluminium alloy band) GD-AI Si 12 Special aluminium alloy (Die-cast) BeO Berylliumoxyd K


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    PDF AI203 OT-32, O-126) O-220 O-220, ZN 3055 transistor Transistor w1l 7805 TO-220 V7233 5241E V7331 V5237B V-5240-k mk 5373 V7622

    kkz 12

    Abstract: transistor dv4
    Text: Temic U6083B Se m i co n ü u c tors PWM Power Control with Interference Suppression Description The U6083B is a PWM IC in bipolar technology for the control of an N-channel power MOSFET used as a highside switch. The IC is ideal for use in the brightness


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    PDF U6083B U6083B D-74025 21-Apr-99 kkz 12 transistor dv4

    2N3303

    Abstract: T1S57 RJh 3347 2N3680 LA 4301 transistor ITT 2907 2N3792 2N3574 BF173 transistor bf 175
    Text: Semiconductor Components Data Book 4 Transistors C o p y rig h t 1971 by T exas In s tru m e n ts L im ited . A ll R ig h ts R eserv ed . P rin te d in th e U n ite d K ingdom . T his b o o k , o r p arts th e re o f, m ay n o t be rep ro d u ce d in any


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    PDF Chiana56 2N3303 T1S57 RJh 3347 2N3680 LA 4301 transistor ITT 2907 2N3792 2N3574 BF173 transistor bf 175