Untitled
Abstract: No abstract text available
Text: MMBTH10M3T5G NPN VHF/UHF Transistor The MMBTH10M3T5G device is a spin−off of our popular SOT−23 three−leaded device. It is designed for general purpose VHF/UHF applications and is housed in the SOT−723 surface mount package. This device is ideal for low−power surface mount
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MMBTH10M3T5G
MMBTH10M3T5G
MMBTH10M3/D
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MMBTH10M3T5G
Abstract: marking AJ Marking code mps MMBTH10M3
Text: MMBTH10M3T5G NPN VHF/UHF Transistor The MMBTH10M3T5G device is a spin−off of our popular SOT−23 three−leaded device. It is designed for general purpose VHF/UHF applications and is housed in the SOT−723 surface mount package. This device is ideal for low−power surface mount
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MMBTH10M3T5G
MMBTH10M3T5G
OT-23
OT-723
MMBTH10M3/D
marking AJ
Marking code mps
MMBTH10M3
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nec 817
Abstract: TRANSISTOR R46 2SC4095 transistor r47
Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4095 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4095 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band.
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2SC4095
2SC4095
nec 817
TRANSISTOR R46
transistor r47
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34993
Abstract: 7746-1 transistor ON Semiconductor marking J50 7746-1 NSF2250WT1 NSF2250WT1G 33167 1011 sot323 67723
Text: NSF2250WT1 NPN Silicon Oscillator and Mixer Transistor The NSF2250WT1 NPN silicon epitaxial bipolar transistor is intended for use in general purpose UHF oscillator and mixer applications. It is suitable for automotive keyless entry and TV tuner designs. The device features stable oscillation and small frequency drift
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NSF2250WT1
NSF2250WT1
NSF2250WT1/D
34993
7746-1 transistor
ON Semiconductor marking J50
7746-1
NSF2250WT1G
33167
1011 sot323
67723
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Untitled
Abstract: No abstract text available
Text: NSF2250WT1 NPN Silicon Oscillator and Mixer Transistor The NSF2250WT1 NPN silicon epitaxial bipolar transistor is intended for use in general purpose UHF oscillator and mixer applications. It is suitable for automotive keyless entry and TV tuner designs. The device features stable oscillation and small frequency drift
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NSF2250WT1
NSF2250WT1
NSF2250WT1/D
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transistor marking code 3EM SOT-23
Abstract: NSVMMBTH10 MMBTH10LT1G MMBTH10-4LT1G transistor marking 3em transistor 3em Marking code mps
Text: MMBTH10LT1G, NSVMMBTH10LT1G, MMBTH10LT3G, MMBTH10-4LT1G VHF/UHF Transistor http://onsemi.com NPN Silicon Features • AEC−Q101 Qualified and PPAP Capable NSV Prefix for Automotive and Other Applications Requiring SOT−23 TO−236 CASE 318 STYLE 6
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MMBTH10LT1G,
NSVMMBTH10LT1G,
MMBTH10LT3G,
MMBTH10-4LT1G
AEC-Q101
OT-23
O-236)
MMBTH10LT1/D
transistor marking code 3EM SOT-23
NSVMMBTH10
MMBTH10LT1G
transistor marking 3em
transistor 3em
Marking code mps
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Untitled
Abstract: No abstract text available
Text: MMBTH10LT1G, NSVMMBTH10LT1G, MMBTH10LT3G, MMBTH10-4LT1G VHF/UHF Transistor http://onsemi.com NPN Silicon Features • AEC−Q101 Qualified and PPAP Capable NSV Prefix for Automotive and Other Applications Requiring SOT−23 TO−236 CASE 318 STYLE 6
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MMBTH10LT1G,
NSVMMBTH10LT1G,
MMBTH10LT3G,
MMBTH10-4LT1G
NSVMMBTH10LT1G
MMBTH10â
04LT1G
MMBTH10LT1/D
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MMBT918LT1
Abstract: MMBT918LT1G
Text: MMBT918LT1 VHF/UHF Transistor NPN Silicon Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 15 Vdc Collector −Base Voltage VCBO 30 Vdc Emitter −Base Voltage VEBO 3.0
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MMBT918LT1
MMBT918LT1/D
MMBT918LT1
MMBT918LT1G
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marking Specific Device Code Date Code sot-23 4l
Abstract: transistor 3em
Text: MMBTH10L, MMBTH10-4L, SMMBTH10-4L, NSVMMBTH10L VHF/UHF Transistor NPN Silicon http://onsemi.com Features • S and NSV Prefixes for Automotive and Other Applications • Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
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MMBTH10L,
MMBTH10-4L,
SMMBTH10-4L,
NSVMMBTH10L
AEC-Q101
OT-23
O-236)
MMBTH10LT1/D
marking Specific Device Code Date Code sot-23 4l
transistor 3em
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microdot s-50
Abstract: MMBT918LT1 MMBT918LT1G
Text: MMBT918LT1 VHF/UHF Transistor NPN Silicon Features • Pb−Free Package is Available http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 15 Vdc Collector −Base Voltage VCBO 30 Vdc Emitter −Base Voltage
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MMBT918LT1
MMBT918LT1/D
microdot s-50
MMBT918LT1
MMBT918LT1G
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Y22 SOT23
Abstract: MMBFJ309LT1, Application Notes JFET with Yos MMBFJ309 MMBFJ309LT1 MMBFJ309LT1G MMBFJ310 MMBFJ310LT1 MMBFJ310LT1G
Text: MMBFJ309LT1, MMBFJ310LT1 JFET − VHF/UHF Amplifier Transistor N−Channel http://onsemi.com Features 2 SOURCE • Pb−Free Packages are Available 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 25 Vdc Gate−Source Voltage VGS
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MMBFJ309LT1,
MMBFJ310LT1
OT-23
O-236)
MMBFJ309LT1/D
Y22 SOT23
MMBFJ309LT1, Application Notes
JFET with Yos
MMBFJ309
MMBFJ309LT1
MMBFJ309LT1G
MMBFJ310
MMBFJ310LT1
MMBFJ310LT1G
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MMBFJ310LT1G
Abstract: MMBFJ310LT1 MMBFJ309LT1G ON SEMICONDUCTOR MMBFJ309LT1G MMBFJ309 MMBFJ309LT1 MMBFJ310
Text: MMBFJ309LT1G, MMBFJ310LT1G JFET - VHF/UHF Amplifier Transistor N−Channel http://onsemi.com Features 2 SOURCE • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage
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MMBFJ309LT1G,
MMBFJ310LT1G
OT-23
O-236)
MMBFJ309LT1/D
MMBFJ310LT1G
MMBFJ310LT1
MMBFJ309LT1G
ON SEMICONDUCTOR MMBFJ309LT1G
MMBFJ309
MMBFJ309LT1
MMBFJ310
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Untitled
Abstract: No abstract text available
Text: MMBT918LT1G VHF/UHF Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Symbol Value Unit Collector −Emitter Voltage VCEO 15 Vdc Collector −Base Voltage
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MMBT918LT1G
MMBT918LT1/D
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MMBT918LT1G
Abstract: No abstract text available
Text: MMBT918LT1G VHF/UHF Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 15 Vdc Collector −Base Voltage
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MMBT918LT1G
MMBT918LT1/D
MMBT918LT1G
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transistor y21 sot-23
Abstract: MMBFJ310LT1G SMMBFJ310LT1G Y22 SOT23 S12 sot 23-6
Text: MMBFJ309L, MMBFJ310L, SMMBFJ310L JFET - VHF/UHF Amplifier Transistor N−Channel http://onsemi.com Features 2 SOURCE • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • 3 GATE Site and Control Change Requirements
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MMBFJ309L,
MMBFJ310L,
SMMBFJ310L
AEC-Q101
OT-23
O-236)
MMBFJ309LT1/D
transistor y21 sot-23
MMBFJ310LT1G
SMMBFJ310LT1G
Y22 SOT23
S12 sot 23-6
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MSD2714AT1
Abstract: MSD2714AT1G JB marking transistor Marking code mps
Text: MSD2714AT1 Preferred Device VHF/UHF Transistor NPN Silicon Features • Pb−Free Package is Available http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Max Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc Emitter-Base Voltage
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MSD2714AT1
MSD2714AT1/D
MSD2714AT1
MSD2714AT1G
JB marking transistor
Marking code mps
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transistor marking JB
Abstract: MMBTH10-4LT1G MMBTH10 MMBTH10LT1 MMBTH10LT1G MMBTH10LT3G
Text: MMBTH10LT1G, MMBTH10-4LT1G VHF/UHF Transistor NPN Silicon Features http://onsemi.com • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 25
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MMBTH10LT1G,
MMBTH10-4LT1G
MMBTH10LT1/D
transistor marking JB
MMBTH10-4LT1G
MMBTH10
MMBTH10LT1
MMBTH10LT1G
MMBTH10LT3G
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Untitled
Abstract: No abstract text available
Text: MMBFJ309L, MMBFJ310L, SMMBFJ310L JFET - VHF/UHF Amplifier Transistor N−Channel http://onsemi.com Features 2 SOURCE • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • 3 GATE Site and Control Change Requirements
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MMBFJ309L,
MMBFJ310L,
SMMBFJ310L
MMBFJ309LT1/D
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transistor marking 3em
Abstract: MMBTH10 MMBTH10LT1G MMBTH10LT1 TRANSISTOR AH 2
Text: MMBTH10LT1, MMBTH10−4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: Features COLLECTOR 3 • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 1 BASE MAXIMUM RATINGS
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MMBTH10LT1,
MMBTH10-4LT1
MMBTH10LT1/D
transistor marking 3em
MMBTH10
MMBTH10LT1G
MMBTH10LT1
TRANSISTOR AH 2
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NEC IC D 553 C
Abstract: nec d 588 nec 817 D 5038 transistor PE 7058 TRANSISTOR R46 p10367 transistor NEC D 586 NEC D 586 RIO R47
Text: DATA SHEET SILICON TRANSISTOR 2SC4095 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4095 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal am plifiers from VHF band to UHF band.
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2SC4095
2SC4095
NEC IC D 553 C
nec d 588
nec 817
D 5038 transistor
PE 7058
TRANSISTOR R46
p10367
transistor NEC D 586
NEC D 586
RIO R47
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12w 5d
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC3629 NPN EPITAXIAL PLANAR TY PE DESCRIPTION OUTLINE DRAWING 2SC3629 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers in UHF band 7.2 volts operation applications. Dimensions in mm FEATURES
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2SC3629
2SC3629
520MHz,
12w 5d
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Mitsubishi transistor databook
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC3022 NPN E P IT A X IA L PLANAR T Y P E DESCRIPTION 2SC3022 is a silicon NPN epitaxial planar type transistor specifi cally designed for UHF high power amplifier applications. OUTLINE DRAWING Dimensions in mm FEATURES •
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2SC3022
2SC3022
520MHz,
Mitsubishi transistor databook
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC3379 NPN EPITAXIAL PLANAR TY P E DESCRIPTION OUTLINE DRAWING Dim ensions in mm 2SC3379 is a silicon NPN epitaxial planar type transistor specifi cally designed for UHF power amplifier applications. FEATURES • High power gain: G p eè6.7dB
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2SC3379
2SC3379
520MHz,
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Untitled
Abstract: No abstract text available
Text: Q D 1 7b S f i MITSUBISHI RF POWER TRANSISTOR TIS 2SC3022 NPN EP IT A X IA L PLANAR T Y P E DESCRIPTION 2SC3022 is a silicon NPN epitaxial planar type transistor specifi cally designed for UHF high power amplifier applications. OUTLINE DRAWING Dim e n sio n s in mm
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2SC3022
2SC3022
520MHz,
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