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    TRANSISTOR U31 Search Results

    TRANSISTOR U31 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR U31 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SUR503EF ㅜ Semiconductor Epitaxial planar NPN silicon transistor Description • Dual chip digital transistor Features • Two SRC1206 chips in SOT-563F package • Simplify circuit design • Reduce a quantity of parts and manufacturing process Ordering Information


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    PDF SUR503EF SRC1206 OT-563F OT-563F KSD-R5U002-000

    Untitled

    Abstract: No abstract text available
    Text: ㅇ SBT2907F Semiconductor PNP Silicon Transistor Descriptions • General purpose application • Switching application Features • Low Leakage current • Low collector saturation voltage enabling low voltage operation • Complementary pair with SBT2222F


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    PDF SBT2907F SBT2222F SBT2907F OT-23F KSD-T5C056-000

    on semiconductor marking code 2F

    Abstract: marking 2F SBT2907A
    Text: ㅇ SBT2907A Semiconductor PNP Silicon Transistor Descriptions • General purpose application • Switching application Features • Low Leakage current • Low collector saturation voltage enabling low voltage operation • Complementary pair with SBT2222A


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    PDF SBT2907A SBT2222A SBT2907A OT-23 KSD-T5C053-000 on semiconductor marking code 2F marking 2F

    SBT2907AU

    Abstract: No abstract text available
    Text: ㅇ SBT2907AU Semiconductor PNP Silicon Transistor Descriptions • General purpose application • Switching application Features • Low Leakage current • Low collector saturation voltage enabling low voltage operation • Complementary pair with SBT2222AU


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    PDF SBT2907AU SBT2222AU SBT2907AU OT-323 KSD-T5D021-000

    Untitled

    Abstract: No abstract text available
    Text: ㅇ SBT2907 Semiconductor PNP Silicon Transistor Descriptions • General purpose application • Switching application Features • Low Leakage current • Low collector saturation voltage enabling low voltage operation • Complementary pair with SBT2222


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    PDF SBT2907 SBT2222 SBT2907 OT-23 KSD-T5C054-000

    Untitled

    Abstract: No abstract text available
    Text: ㅇ SBT2907AF Semiconductor PNP Silicon Transistor Descriptions • General purpose application • Switching application Features • Low Leakage current • Low collector saturation voltage enabling low voltage operation • Complementary pair with SBT2222AF


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    PDF SBT2907AF SBT2222AF SBT2907AF OT-23F KSD-T5C055-000

    MARKING F2

    Abstract: SBT2907AU
    Text: ㅇ SBT2907AUF Semiconductor PNP Silicon Transistor Descriptions • General purpose application • Switching application Features • Low Leakage current • Low collector saturation voltage enabling low voltage operation • Complementary pair with SBT2222AU


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    PDF SBT2907AUF SBT2222AU SBT2907AUF OT-323F KSD-T5D022-000 MARKING F2 SBT2907AU

    STC5551F

    Abstract: No abstract text available
    Text: ㅊ 9+ STC5551F Semiconductor NPN Silicon Transistor Descriptions • General purpose amplifier • High voltage application Features • High collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE sat =0.5V(MAX.)


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    PDF STC5551F STC5551F OT-89 KSD-T5B012-000

    SOT89 MARKING CODE B2

    Abstract: STD1766 STB1188
    Text: ㅇ STD1766 NPN Silicon Transistor Descriptions • Medium power amplifier PIN Connection Features • PC Collector power dissipation =2W (Ceramic substrate of 250 ㎟x0.8t used) • Low collector saturation voltage : VCE(sat)=0.5V(Typ.) • Complementary pair with STB1188


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    PDF STD1766 STB1188 OT-89 KSD-T5B004-003 SOT89 MARKING CODE B2 STD1766 STB1188

    Untitled

    Abstract: No abstract text available
    Text: Jsii.su <~>£.m.i-L.onaucitoi L/-* 10 duct ±, One. £s t/ TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. U311 N-Channel Silicon Junction Field-Effect Transistor • Mixer • Oscillator • VHF/UHF Amplifier


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    PDF 17QOO

    U310

    Abstract: SMPJ310 transistor u310
    Text: Databook.fxp 1/14/99 11:33 AM Page B-67 B-67 01/99 U310 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C. ¥ Mixer ¥ Oscillator ¥ VHF/UHF Amplifier Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current


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    PDF NJ72L SMPJ310 U310 SMPJ310 transistor u310

    U311

    Abstract: No abstract text available
    Text: Databook.fxp 1/13/99 2:09 PM Page B-68 B-68 01/99 U311 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C. ¥ Mixer ¥ Oscillator ¥ VHF/UHF Amplifier Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current


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    PDF NJ72L U311

    STU310DH

    Abstract: TO-252-4L stu310
    Text: S T U310DH S amHop Microelectronics C orp. May,28,2007 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m W ) V DS S ID 30V 19A P R ODUC T S UMMAR Y (P -C hannel) Max R DS (ON) ( m W ) V DS S


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    PDF U310DH O-252-4L STU310DH O-252-4L O-252-4 STU310DH TO-252-4L stu310

    stu312d

    Abstract: stu312 U312D 312d pf 312D STU31
    Text: S T U312D Green Product S amHop Microelectronics C orp. Oct 08 2008 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (P -C hannel) P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m Ω ) V DS S ID 30V 18A Max V DS S ID


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    PDF U312D O-252-4L STU312D O-252-4L stu312d stu312 U312D 312d pf 312D STU31

    9945a

    Abstract: ic 9945 a 8 pin ci 9933 b 9945 A transistor 9945 A 9962 GH cx 3120 inverter circuit diagram 9936 9936 GN diode 9948
    Text: FAIRCHILD DIODE-TRANSISTOR MICROLOGIC INTEGRATED CIRCUITS COMPOSITE DATA SHEET A FAIRCHILD COMPATIBLE CURRENT SINKING LOGIC PRODUCT 0 °C TO 7 5 °C TEM PERATURE RANGE GENERAL DESCRIPTION— Fairchild Diode Transistor Micrologic DT/j L Integrated Circuits family uses


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    ic 9945 a 8 pin

    Abstract: 9945 A transistor ic 9945 a 4 pin L9944 diode 9948 LT 9949 fairchild micrologic 3m 9962 9932 DTL fairchild 9946
    Text: FAIRCHILD DIODE-TRANSISTOR MICROLOGIC INTEGRATED CIRCUITS COMPOSITE DATA SHEET A FAIRCHILD COMPATIBLE CURRENT SINKING LOGIC PRO DUCT 0°C TO 75°C TEM PERATURE RAN GE GENERAL DESCRIPTION — Fairchild Diode Transistor Micrologic DT/iL Integrated Circuits family uses


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    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    PDF 3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    U310

    Abstract: No abstract text available
    Text: 9 -9 7 B 67 U310 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • MIXER Absolute maximum ratings at T* = 25°C. • OSCILLATOR Reverse Gate Source & Reverse Gate Drain Voltage • VHF/UHF AMPLIFIER Continuous Forward Gate Current Continuous Device Power Dissipation


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    PDF 0QC1C767 U310

    Untitled

    Abstract: No abstract text available
    Text: B 68 9-97 U311 N -C H A N N E L SILIC O N JU N CTIO N FIELD-EFFECT TRANSISTOR • MIXER • OSCILLATOR VHF/UHF AMPLIFIER Absolute maximum ratings at Ta = 25'C. Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation


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    PDF NJ72L 27R-3375 000D7Ã

    Untitled

    Abstract: No abstract text available
    Text: 4fl2bêflô 0 0 0 0 2 3 1 h • 2bE D INTER F E T CORP - r - 3 i-a .5 B39 U311 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • VHF AMPLIFIERS • OSCILLATORS • MIXERS absolute m axim u m ratings at 25°C free-air temperature Gate-Drain or Gate-Source V o lt a g e .


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    PDF 1503C SMP-U311

    J310

    Abstract: Transistor J310 J310 equivalent U310 J309 13000 BR transistor transistor u310 U309 N-Channel JFET transistor j309 transistor
    Text: U309/J309/MMBFJ309/U310/J310/MMBFJ310 National Æ Â Semiconductor U309 U310 J309 J310 MMBFJ309 MMBFJ310 /V s U T L /G /1 0 1 0 0 -9 TO-236 SOT-23 TO*M T L/G /10100 -6 G T L /G /1 0 1 0 0 -2 N-Channel JFET Transistor for RF Amplifiers Electrical Characteristics t a


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    PDF U309/J309/MMBFJ309/U310/J310/MMBFJ310 MMBFJ309 MMBFJ310 J310 Transistor J310 J310 equivalent U310 J309 13000 BR transistor transistor u310 U309 N-Channel JFET transistor j309 transistor

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


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    PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643