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    TRANSISTOR U 554 Search Results

    TRANSISTOR U 554 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR U 554 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IR2E27A

    Abstract: Sharp IR2E02 IR2E01 IR2E25 Sharp IR2E27A IR2E02 IR2E27A SHARP LED ir2e01 ir2e09 IR2E28
    Text: Product Lineup Product Lineup • Transistor Arrays 'S H A R P 4 Product Lineup SHARP 5 Product Lineup ■ Special Function Transistor Arrayys F u nc ti o n Mo del No. O utput v o lt a g e 1mA V) 400 12 -c irc u it P rinte r D river and IR 2402 1 - c i r c u i t R ib b o n Shif t D r i v e r


    OCR Scan     		PDF 24DIP/24SOP IR2C10 IR2E34 IR2E27A Sharp IR2E02 IR2E01 IR2E25 Sharp IR2E27A IR2E02 IR2E27A SHARP LED ir2e01 ir2e09 IR2E28

    S100 NPN Transistor

    Abstract: No abstract text available
    Text: u r 2SC D • fl23 Sb05 GGQ4507 S NPN Silicon RF Transistor isiEG : -~r-S i- M BF 503 -SIEMENS AKTIENGESELLSCHAF - ;— BF 5 0 3 is an NPN silicon planar RF transistor in TO 9 2 plastic package 1 0 A 3 DIN 4 1 8 6 8 .


    OCR Scan     		PDF GGQ4507 E--08 S100 NPN Transistor

    2SC1622A

    Abstract: No abstract text available
    Text: NEC j > IJ Z1 > h- =7 > 9 S ilic o n T ra n s is to r 2SC1622A N P N i k ^ + v ' / ’VUJfc '> U NPN Silicon Epitaxial Transistor Audio Frequency High Gain Amplifier H&m / P A C K A G E ^/FEA TU RES » S'J 7"') DIMENSIONS KICffl t U f t i t t o U n it : mm)


    OCR Scan     		PDF 2SC1622A 2SC1622A

    RC723DP

    Abstract: SN72748L MC7805G LM340H-05 SG3525 equivalent transistor KT 209 M 78M15HM SN52107L SG711 SG7812CK
    Text: VOLTAGE REGULATORS OPERATIONAL AMPLIFIERS 2 INTERFACE CIRCUITS 3 TRANSISTOR ARRAYS OTHER CIRCUITS APPLICATIONS NOTES 5 d u c t S e le c to r G uide INTER FA C E C IR C U ITS Regulating Pulse Width Modulators 13 13 16 21 24 44 1524/2524/3524 1525/2525/3525


    OCR Scan     		PDF /2525A /3525A /2527A /3527A 523/3523A RC723DP SN72748L MC7805G LM340H-05 SG3525 equivalent transistor KT 209 M 78M15HM SN52107L SG711 SG7812CK

    2SB554

    Abstract: toshiba 2sb554 2SD424 TOSHIBA 2SD424 SB554 S8B554-R
    Text: 2 / U D > P N P = « f f i i b « . W h 5 ^ y 7 >‘9 SILICON PNP TR IP LE DIFFUSED MESA TRANSISTOR 2SB o 554 U n i t i n mm o 0 2 5 .0 MAX . P ow er A m p l i f i e r A p p l i c a t i o n s 3 • u ? milite a : * è i S iB - E - t - t o 0 2 1 .0 MAX Hr : P c = 150W


    OCR Scan     		PDF 2sb554 -10mA, -10V-IBf= 2SB554 S8B554â -20mA toshiba 2sb554 2SD424 TOSHIBA 2SD424 SB554 S8B554-R

    BF195 equivalent

    Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416
    Text: Introduction This is N ational S em iconducto r's latest handbook on discrete sem i­ co nd u ctor devices. Y o u w ill notice th at the co m p any has added more than 350 transistor part numbers and three p ro d u ct fam ilies since pub lication o f the last handbook in 1971. M any o f these new products


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Components D a ta s h e e t s ta tu s P ro d u ct sp ecification d a te o f is s u e N o v em b e r 1 990 FEATURES • BSS100 N-channel enhancement mode vertical D-MOS transistor Q U IC K R E F E R E N C E DATA Direct interface to C-M O S, TTL, etc.


    OCR Scan     		PDF BSS100 003bl2b 0Q3bl37 D03fcil2fl

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR ¿¿PA803T NPN SILICON EPITAXIALTRANSISTO R WITH BUILT-IN 2 ELEMENTS M INI MOLD ¿¡PA803T has b u ilt-in 2 tra n s is to rs w h ic h w e re d e v e lo p e d fo r UHF. PACKAGE DRAWINGS (U n it: m m ) FEATURES •


    OCR Scan     		PDF PA803T PA803T 2SC4570) uPA803T

    613 GB 123 CT

    Abstract: transistor NEC D 587 Ic D 1708 ag 513 gb 173 ct MPA80 nec d 882 p transistor ic nec 2051 transistor NEC D 882 p NEC 2561 h NEC 2561 de
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA803T NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD /xPA803T has b u ilt-in 2 tra n s is to rs w h ic h w e re d e v e lo p e d fo r UHF. PACKAGE DRAW INGS (U n it: m m ) FEATURES • H igh fT


    OCR Scan     		PDF uPA803T /xPA803T 2SC4570) 613 GB 123 CT transistor NEC D 587 Ic D 1708 ag 513 gb 173 ct MPA80 nec d 882 p transistor ic nec 2051 transistor NEC D 882 p NEC 2561 h NEC 2561 de

    bss100 transistor

    Abstract: BSS100 PINNING-TO-92 JZSS773
    Text: Philips C o m po nents Data sheet status P ro d u c t sp e cific a tio n data of issue N ov em b er 1990 FEATURES BSS100 N-channel enhancement mode vertical D-MOS transistor Q U IC K R E F E R E N C E DATA • Direct interface to C-M O S, TTL, etc. SYM BOL


    OCR Scan     		PDF BSS100 PINNING-TO-92 JZSS773 003bl57 LL53S31 003bl2fi bss100 transistor BSS100

    NJL5165K

    Abstract: NJL5165KL 1FPM tw10s
    Text: NJL5165KL PHOTO REFLECTOR WITH LENSE • GENERAL DESCRIPTION OUTUNE typ. U nit:m m The NJL5165KL is small photo reflector o f Deep Focal Distance and High Resolution. The NJL5165K.L is composed o f infrared LED, high sensitive Si-photo transistor and high resoliutive lense.


    OCR Scan     		PDF NJL5165KL NJL5165K Ta-25 1FPM tw10s

    carbon resistor

    Abstract: tp3098 TO-117a TP309
    Text: nOTOROLA SC XSTRS/R F M OTOROLA HbE D • b3b?554 Q I MOTb _T~32rQS ■SEMICONDUCTOR M TECH N ICA L DATA TP3098" The RF Line U H F L in e a r P o w e r T ra n s isto r • • • • • • 2 1C = 200 mA UHF LINEAR TRANSISTOR NPN SILICON


    OCR Scan     		PDF TP3098 45004/B) 45004/K) TP309Ã O-117A) carbon resistor TO-117a TP309

    2SC4843

    Abstract: TRANSISTOR nf 841
    Text: TOSHIBA 2SC4843 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4843 V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. Unit in mm 2.1 ± 0.1 • Low Noise Figure, High Gain. . N F = l.ld B , |S2 iel2 = 15.5dB f = 1GHz 1. 2 5 ± 0.1 MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC4843 2SC4843 TRANSISTOR nf 841

    Untitled

    Abstract: No abstract text available
    Text: f Z 7 S G S -T H O M S O N Ä T# 5 BUV62A m O T K S FAST SWITCHING POWER TRANSISTOR • ■ ■ ■ F A S T S W IT C H IN G TIM E S LO W S W IT C H IN G LO S S E S LO W BASE C U R R E N T R E Q U IR E M E N T S V E R Y LO W S A T U R A T IO N V O L T A G E A N D


    OCR Scan     		PDF BUV62A

    12N05L

    Abstract: 748U STK12N
    Text: SGS-THOMSON ’[LiCTïMOOS * t7 STK12N05L STK12N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE S TK 12N 05L S TK12N 06L . . . . . . . V dss R D S o n Id 50 V 60 V 0 .1 5 U 0 .1 5 Q 12 A 12 A AVALANC HE RUG G EDNESS TECHNO LO G Y


    OCR Scan     		PDF STK12N05L STK12N06L TK12N OT-82 OT-194 STK12N05L/STK12N06L 12N05L 748U STK12N

    MMPQ3467

    Abstract: SOIC-16 TN3467A
    Text: S e m i c o n d u c t o r ' TN3467A MMPQ3467 TN3467AI MMPQ3467 & D iscrete P O W E R & S ig n a l Technologies National SOIC-16 PNP Switching Transistor T h is d e v ic e is d e s ig n e d for high s p e e d s a tu rated sw itching app lication s at currents to 8 0 0 m A . S o u rc e d fro m P ro c ess 7 0 .


    OCR Scan     		PDF TN3467A MMPQ3467 O-226 SOIC-16 S0113D D04DbMfl MMPQ3467 SOIC-16 TN3467A

    2SC696

    Abstract: 2SC708A transistor 2sc696 2SC696A 2SC734 2SC853 2SC708 2SC815 2SC734 Y 2SC32
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF 2SC734 2SC1959 2SC696 2SC708A transistor 2sc696 2SC696A 2SC853 2SC708 2SC815 2SC734 Y 2SC32

    2SD1378

    Abstract: No abstract text available
    Text: 2SD1378 h i 7 > v 7 .$ / T ransistors 2SD1378 y 'J 3 > h 7 > y 7 ^ U k M y & W t ^ Ifffl/L o w Freq. Power Amp. Epitaxial Planar NPN Silicon Transistor • • fl.JfjT|-;±|l/Dimensions Unit: mm) 1) V c e o =80V, T —x 2) V c eo = Pc = 1 0 W 2 T 7 " T T K 7 "f A t* 5 g „


    OCR Scan     		PDF 2SD1378 2SB1007. 2SD1378

    2SD480

    Abstract: 2SD297 2SD388 25D40 k 553 y 1a 2sd438 transistor 2sd400 transistor data 2SD392 2SD415 2SD400
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF 2SD297 2SD476 3D478 2SD479 2SD480 2SD480 2SD297 2SD388 25D40 k 553 y 1a 2sd438 transistor 2sd400 transistor data 2SD392 2SD415 2SD400

    MTP27N10E

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF140 Pow er Field E ffect Transistor N-Channel Enhancement-Mode Silicon Gate T h is T M O S P o w e r FET is d e s ig n e d fo r lo w Tf v o lta g e , h ig h s p e e d p o w e r s w itc h in g a p p lic a tio n s s u c h a s s w itc h in g re g u la to rs , c o n v e rte rs , s o le n o id


    OCR Scan     		PDF IRF140 D31H5 MTP27N10E

    Untitled

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-61 PACKA G E N PN V cE O Ic s u s (m ax ) VOLTS A M PS 2N 1724 80 5 2 0 -9 0 @ 1 5 1@ 2N 1724A 120 5 2N 1725 80 2N 2811 D E V IC E TY PE ^FE@ IC/ V ce ( m in /m a x @ A /V ) ^ C E (sa t) @ If/IB (V @ A /A )


    OCR Scan     		PDF

    BUV 12

    Abstract: buv12
    Text: MGTORCLA SC X S T R S /R F 12E O I b3b?554 OQflMflat 0 | MOTOROLA SEMICONDUCTOR TECHNICAL DATA 20 AMPERES SWITCHMODE* SERIES NPN SILICON POWER TRANSISTOR NPN SILICON POWER METAL TRANSISTOR . . . designed for high speed, high voltage, high power applications.


    OCR Scan     		PDF

    bu548

    Abstract: BU548A BUS48 erni relay erni relay B1 5.5 relay ERNI transistor 2sc 548 BUS48A CIT Relay relay ERNI ad 5.2
    Text: 17-JUN-1999 16:21 FROM TO MAGNATEC 01132794449 P.02/08 M agnatec 2 0 0 - 5 2 . ¿y K \ MAG N i Magna Park. Coventry Road, Lutterworth Leicestershire LE17 4JB, England Sales telephone: 01455 554711 Admin telephone: 01455 552505 Fax: 01455 558843 CwrtKarc Ho i'j JiiiS


    OCR Scan     		PDF 17-JUN-1999 BUS48 BUS48A Time-25Â bu548 BU548A erni relay erni relay B1 5.5 relay ERNI transistor 2sc 548 BUS48A CIT Relay relay ERNI ad 5.2