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    TRANSISTOR TT 2222 Search Results

    TRANSISTOR TT 2222 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR TT 2222 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    timer 555 dil8

    Abstract: ZSCT1555 astable Multivibrator 74
    Text: PRECISION SINGLE CELL TIMER ZSCT1555 ISSUE 3 - JULY 2006 DEVICE DESCRIPTION These devices are precision timing circuits for generation of accurate time delays or oscillation. Advanced circuit design means that these devices can operate from a single battery


    Original     		PDF ZSCT1555 timer 555 dil8 ZSCT1555 astable Multivibrator 74

    APPLICATIONS OF astable multivibrator

    Abstract: No abstract text available
    Text: OBSOLETE No Recommended Replacements PRECISION SINGLE CELL TIMER ZSCT1555 ISSUE 3 - JULY 2006 DEVICE DESCRIPTION These devices are precision timing circuits for generation of accurate time delays or oscillation. Advanced circuit design means that these devices can operate from a single battery


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: PRECISION SINGLE CELL TIMER ZSCT1555 ISSUE 3 - JULY 2006 DEVICE DESCRIPTION These devices are precision timing circuits for generation of accurate time delays or oscillation. Advanced circuit design means that these devices can operate from a single battery


    Original     		PDF ZSCT1555

    LB121A

    Abstract: TIF42C JAPAN transistor TIF41C TIF32C HE9013H transistor EBC 3904 3842P SC2625 BD238 EV
    Text: s * hu tt s o m n iB J U f tic « » * a * B D » o r b d s t » In addition to our own products, we supply the following products in JAPAN. TRANSISTOR, LINEAR 1C ' J M S S M A L L NPN N U M B ER PN P or IVD— SIGNAL TRANSISTORS MAXIMUM R ATIN G S HSM C


    OCR Scan     		PDF BT1815 HMBT1Q15 BT2222A BT2907A HBC807 BC817 BT5087 BT5088 BT8050 BT8550 LB121A TIF42C JAPAN transistor TIF41C TIF32C HE9013H transistor EBC 3904 3842P SC2625 BD238 EV

    smd code HF transistor

    Abstract: TRANSISTOR SMD MARKING CODE KF transistor SMD t30 SMD Transistor t30 TRANSISTOR SMD MARKING CODE 5b TRANSISTOR SMD MARKING CODE LK TRANSISTOR SMD MARKING CODE XI smd transistor marking K7 transistor SMD MARKING CODE HF smd transistor marking L6 NPN
    Text: Philips Semiconductors 7 1 1 DflE?b O D b ^ T ? 743 • P H I N Product specification BLU86 UHF power transistor FEATURES • SMD encapsulation • Emitter-ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability.


    OCR Scan     		PDF 71IDflgb BLU86 OT223 OT223 smd code HF transistor TRANSISTOR SMD MARKING CODE KF transistor SMD t30 SMD Transistor t30 TRANSISTOR SMD MARKING CODE 5b TRANSISTOR SMD MARKING CODE LK TRANSISTOR SMD MARKING CODE XI smd transistor marking K7 transistor SMD MARKING CODE HF smd transistor marking L6 NPN

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    transistor tt 2222

    Abstract: 9 BJE 53 mj 1504 transistor BFQ42 mj 1504 BLW29 tt 2222 transistor l5
    Text: • bbSBTBl OOSTSflM ÔG7 H A P X N AtlER PHILIPS/DISCRETE BLW29 b*ÎE T> V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B or C operated mobile transmitters w ith a nominal supply voltage o f 13,5 V. Because o f the high gain and excellent power


    OCR Scan     		PDF BLW29 BFQ42 bb531Bl 7Z77586 7Z77587 transistor tt 2222 9 BJE 53 mj 1504 transistor mj 1504 BLW29 tt 2222 transistor l5

    kb 778 o g 5

    Abstract: 3e tRANSISTOR kb 778 UA61
    Text: — S 7 • $ / — h f ê E 'ê ' > i> 7 * 9 -7 h Com pound Transistor / //PA 6118C ü, f# (c K-y V9 A 7 ¿ P A <r>Y'ÿ A °F IP 6 1 1 8 C t 7 * ffl 8 Elï# )StfO ] - 7 > y X ^ T H ' T f „ T T L ^ M O S L S I^ tB ÎJÎS f- d ^ h - fr- C , ^ - X fc îfc fc iS lIIR t


    OCR Scan     		PDF juPA611 PA6118Cii, kb 778 o g 5 3e tRANSISTOR kb 778 UA61

    ic SE 135

    Abstract: 00jT K49H
    Text: i r — S* • i s — h BA1A4Z Compound Transistor Î& ÎÆ 4# ' r t ü t P N P x □ ^ - fi i t : mm) o ^ M T X i t ÿ f i l l T V ' Î t » ( R i = 10 4 k£2) 6° ¥ O B A 1 A 4 Z b = > > * Ê * JS * Æ fê (T a = n 9 n V 9 9 - 3 - 1 3 V 3 u- 9 y •


    OCR Scan     		PDF PWS10 CycleS50 ic SE 135 00jT K49H

    HT - 0886

    Abstract: HT 0886 g3je ht 9366 MARKING LE50 T108
    Text: NEC 1 î ^>— 57 . Ì / — h C om pound Transistor / \ 1 ' 7 t «F GN1A3Q & ^ •^ H ! W Ì o'<j tx m /L £ ftB itr o tte ( Ri = 1 .0 k û , 2.1 ±0.1 1.25 + 0.1 R 2 = 10 kQ O G A 1A 3Q £ 3 > r i) / > ? ') T îû tm T ' ë i t (T a = m z îv JX. ; 2


    OCR Scan     		PDF PWS10 CycleS50 HT - 0886 HT 0886 g3je ht 9366 MARKING LE50 T108

    RM4T

    Abstract: r460 FET 2SK800 lg lx 221 TC6142 b0992 tt 22
    Text: M O S Field Effect P ow er Transistor N ^ ^ ^ < 7 -M O S x 2S K 800ÌÌ, <, N - f - -y T x 4 ' > ' N> X/ > h m m s-ty — M OS > , Ü 5 J i & - v i - > X FET F E T T '^ ~ > 'f v ^ - fì : mm) f -> 7 ' * , D C -D C n > /< — # Î t ° V dss~ 450 V, o f i ^ > f f i Î Æ


    OCR Scan     		PDF 2SK800 2SK800Ã RM4T r460 FET 2SK800 lg lx 221 TC6142 b0992 tt 22

    BA1A4M-T

    Abstract: BA1A4M 3773A T108 ptc T108 t0429
    Text: X — ^ • S/— h ÎH 'ê ' V -y > i> Com pound Transistor BAI A 4 M ÍS Íjt F * 3 Ü N P N x t : ^ + ' > T ; u ^ ' > y £|- ff¿l2 ] ¥ 4 5 1 i t o ^ ' i T : m m i X i £ Î Æ £ 1* 1 /1 L t i ' l t c ( R j = 1 0 ki2, R 2= 1 0 kQ) O B N 1A 4M ¿ 3 > f i ]


    OCR Scan     		PDF PWS10 CycleS50 i0992 BA1A4M-T BA1A4M 3773A T108 ptc T108 t0429

    TRANSISTOR BJ 033

    Abstract: 2SB1068 JAN 5751 m5ss
    Text: SEC j ^ fx / \ Y 7 Silicon T ran sistor A 2SB1068 PN P Silicon Epitaxial Transistor Audio Frequency Amplifier ¡^ S / F E A T U R E S K W m /P A C K A G E DIMENSIONS oî&‘W.i±-kWiM.WM<n^— ÿ — V ÿ 4 ^ ' í r f f l í L T v", K F '^ O 'f , Unit : mm


    OCR Scan     		PDF 2SB1068 o2SD15131 PWS10 TRANSISTOR BJ 033 2SB1068 JAN 5751 m5ss

    transistor AFR 16

    Abstract: BAIL4M transistor afr 22 bn1l4m ba1l4m T108
    Text: I ¿Y I fK NEC m ïâ-ê- h ^ > > x 9 Compound Transistor iír / v - r z B A I L 4M í£ í / t Ñ 1 N P N X fcf f l r i s T J U 9 4t $ o £ W T H 1 ¥ - Í í L • m m ★ x f f i t Í L £ 1*1 j t L T V ' á t o ( R j = 4 7 kQ , R 2 = 4 7 k f í ) ÖE


    OCR Scan     		PDF Cycleg50 transistor AFR 16 BAIL4M transistor afr 22 bn1l4m ba1l4m T108

    L0742

    Abstract: L0742 81 MPA1452H TL08 T460 IC-6338 093L
    Text: SEC j m = f T / x r x m 'ê r y < r7 - b ^ X ^ C o m p o u n d P o w e r T ra n s is to r A / N P N l t ° ^ + '> 7 ; ^ / P ij = l > Ï '> A 1 4 5 2 H U>{ I i f f l NPN Silicon Epitaxial Transistor High Speed Switching Industrial Use DC —DC 3 > / < — 9 •V U / 4 Y ■* - ? • U u - • 7 > 7 ° t c


    OCR Scan     		PDF MPA1452H 13X26X4 L0742 L0742 81 MPA1452H TL08 T460 IC-6338 093L

    PT 4107

    Abstract: transistor tt 2222 Rogers 6010.5 TT 2222
    Text: M / A -C O fl P E S Z 1> H 0 SbMSEGS GOODSI^ bis • MAP sm e MICROWAVE PULSED POWER TRANSISTOR PH9612 - 75 REV. PRELIMINARY * & u / A -r < M/A-COM PHI, INC. T-33-/3 DESIGN CHARACTERISTICS • High Efficiency Transistor Geometry • Broadband 960 • 1215 MHz Operation


    OCR Scan     		PDF PH9612 T-33-/3 MD1889 ATC100A 195D555X0050F PT 4107 transistor tt 2222 Rogers 6010.5 TT 2222

    2SA1462

    Abstract: JE 33 TRANSISTOR BO 346 J-10 T108 T460 3111R GM0B JE 800 transistor
    Text: NEC i m=ïTivfx A Silicon Transistor 2SA1462 P N P i b " ^ + '> 7 J U M '> ' n > b ^ > ' > * 9 PN P Silicon Epitaxial Transistor High Speed Switching ^ S / P A C K A G E D IM EN SIO N S #ë/FEA TU RES O X - í v f > / 'iÈ ÎÉ Â 'j iË ^ o Unit : mm) ton : 9.0 ns T Y P . , t stg : 16 ns T Y P . ,


    OCR Scan     		PDF 2SA1462 o2SC3735 2SA1462 JE 33 TRANSISTOR BO 346 J-10 T108 T460 3111R GM0B JE 800 transistor

    NEC C3568

    Abstract: c3568 C3568 NEC AFT85 C0471 2SA1396 2SC3568 T460
    Text: '> >J =3 > s<*7— h Silicon P o w er Transistor 2SC3568 NPNX I = l> h + 9 x i f f l NPN Silicon Epitaxial Transistor High Speed Switching Industrial Use 2S C 3568 l i f t S i t X^í 7 f > 9’m t K^=I7 - DC —DC n > -FÿVyXj't, 9, PACKAGE DIMENSIONS U n it : mm)


    OCR Scan     		PDF C3568 2SA1396 24-lll 22-ft 25-fiSift 32-te 34-Ss 27-fe 29-ffiiE NEC C3568 C3568 NEC AFT85 C0471 2SA1396 2SC3568 T460

    Untitled

    Abstract: No abstract text available
    Text: Product specification Ph ilip * S em iconductors BLU86 UHF power transistor F EA T U R ES • SM D encapsulation Q U ICK R E F E R E N C E DATA R F performance at Ts S 60 “C in a common emitter dass-B test circuit see note 1 . • Emitter-ballasting resistors for


    OCR Scan     		PDF BLU86 OT223 bbS333 003SlbT

    transistor tt 2222

    Abstract: smd 809 x transistor transistor SMD S33
    Text: N AUER PHILIPS/DISCRETE •. b'lE T> m bbSBSBl 0DSfl737 bOfl « A P X jg iiiiw n o u cto Kroouci specification BLT50 UHF pow er transistor FEATURES • SMD encapsulation • Gold metallization ensures


    OCR Scan     		PDF 0DSfl737 BLT50 OT223 bbS3R31 0DS87M3 transistor tt 2222 smd 809 x transistor transistor SMD S33

    transistor tt 2222

    Abstract: transistor tt 2222 vertical BLF241 b551a Philips 2222-581 UBB777 MBB072 2222 341
    Text: Philips Semiconductors 1^53^31 4G5 IAPX HF/VHF power MOS transistor Product specification BLF241 N AMER PHILIPS/DISCRETE FEATURES PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Withstands full load mismatch • Gold metallization ensures


    OCR Scan     		PDF bbS3T31 BLF241 MBB072' MSB009-1 7Z21747 transistor tt 2222 transistor tt 2222 vertical BLF241 b551a Philips 2222-581 UBB777 MBB072 2222 341

    L46R

    Abstract: 96 mfu DIODE HR 8665 PA606T PA607T 4N51 5M1E 328l
    Text: M O S M O S Field Effect Transistor «PA607T P f t ^ M O S F E T 6 t i > 2 m ^~ ¿ ¿ P A 6 7 T(i, M O SF E T£2Hi1 * 1 /1L * :5- i )V K f ' ^ M X T h 9 , Ü 3 X h <7)ffl 0.32 + 0.1 - 0.05 iJ& te n W tL tto «F a JLH ~ +1 o S C -5 9 0 - 0 .1 MOS £ F E T £ 2 3? i[ * J / l


    OCR Scan     		PDF uPA607T PA606T l--62 B484S± L46R 96 mfu DIODE HR 8665 PA607T 4N51 5M1E 328l

    transistor tt 2222

    Abstract: transistor tt 2222 vertical TT 2222 Philips 2222 capacitor for transistor tt 2222 philips Trimmer 60 pf SOT123 Package 2322 151 51005 sot123 trimmer PT 10
    Text: Philips S em iconductors m b b S B 'Ì B l Q 0 S CJ,Ì D C1 4 T 2 BBA PX Product specification VHF power MOS transistor — BLF225 • N AfIER PHILIPS/DISCRETE FEATURES b'ìE D PIN CONFIGURATION • Easy power control • Good thermal stability • Withstands full load mismatch.


    OCR Scan     		PDF BLF225 OT123 MGA053 wcb17 transistor tt 2222 transistor tt 2222 vertical TT 2222 Philips 2222 capacitor for transistor tt 2222 philips Trimmer 60 pf SOT123 Package 2322 151 51005 sot123 trimmer PT 10

    2SC2331

    Abstract: SIRBA TC5344A if4g 2SA1008 PBT GF 20 PBT GF 10 fr 2SC2331 Y
    Text: T -5 > • S / - h s < r> — Silicon Power Transistor 2SC2331 N R N x t ^ + '> 7 ; H * > 'J U > h =7 I i f f l 2 S C 2 3 3 1 ia iS fê x ^ ^ 7 > /X n -, v - f > rm t U K ? n f c 7 - f > 7'- w t - ^ ( f - f i ¿*<7 K ÿ ^ f '< £ i r M M x - t o iff : m m )


    OCR Scan     		PDF 2SC2331 2SA1008 sC-46 220AB SIRBA TC5344A if4g 2SA1008 PBT GF 20 PBT GF 10 fr 2SC2331 Y