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    TRANSISTOR TT 2206 Search Results

    TRANSISTOR TT 2206 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR TT 2206 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    JESD22-A101

    Abstract: JESD22-A102 JESD22-A103 JESD22-A113
    Text: INCH-POUND MIL-PRF-19500/674 16 July 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PLASTIC, NPN, SILICON, SWITCHING, LOW NOISE TYPE 2N2484UE1 JAN, JANTX, JANJ This specification is approved for use by all Departments and Agencies of the Department of Defense.


    Original     		PDF MIL-PRF-19500/674 2N2484UE1 MIL-PRF-19500. OT-23 O-236) JESD22-A101 JESD22-A102 JESD22-A103 JESD22-A113

    qm marking code sot-23

    Abstract: 8725 maxim transistor 1039 maxim 8725 JESD22-A102 JAN2N3700 JESD22-A101 JESD22-A103 JESD22-A113 sot-23 npn marking code cr
    Text: The documentation and process conversion measures necessary to comply with this document shall be completed by 24 October, 2003. INCH-POUND MIL-PRF-19500/694A 24 August 2003 SUPERSEDING MIL-PRF-19500/694 30 April 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PLASTIC, NPN,


    Original     		PDF MIL-PRF-19500/694A MIL-PRF-19500/694 2N3700UE1, MIL-PRF-19500. OT-23 qm marking code sot-23 8725 maxim transistor 1039 maxim 8725 JESD22-A102 JAN2N3700 JESD22-A101 JESD22-A103 JESD22-A113 sot-23 npn marking code cr

    rsn 3502

    Abstract: rsn 3305 rsn 3404 RSN 3306 CL0116 1803 DFX equivalent transistor TT 3034 TT 2206 datasheet transistor tt 2222 ic sw 2604
    Text: FS7000 SERIES 0.5 m STANDARD CELL 1998 FS73A_B HOLTEK Semiconductor Inc. TABLE OF CONTENTS - INDEX -I. Functional Index of Macrocells ………………………….………… I-1 II. Alphanumeric index of Macrocells …………………………….…… II-1


    Original     		PDF FS7000 rsn 3502 rsn 3305 rsn 3404 RSN 3306 CL0116 1803 DFX equivalent transistor TT 3034 TT 2206 datasheet transistor tt 2222 ic sw 2604

    2N2907AUE1

    Abstract: award 686 qm marking code sot-23 JESD22-A101 JESD22-A102 JESD22-A103 JESD22-A113 MIL-PRF19500 MARKING code sot23 h15
    Text: INCH-POUND MIL-PRF-19500/686 30 April 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PLASTIC, PNP, SILICON, SWITCHING, TYPE 2N2907AUE1 JAN, JANTX, JANJ This specification is approved for use by all Departments and Agencies of the Department of Defense.


    Original     		PDF MIL-PRF-19500/686 2N2907AUE1 MIL-PRF-19500. OT-23 O-236) 2N2907AUE1 award 686 qm marking code sot-23 JESD22-A101 JESD22-A102 JESD22-A103 JESD22-A113 MIL-PRF19500 MARKING code sot23 h15

    2N2222AUE1

    Abstract: 2N2222A JANTX 2N2222A JANTXV sot-23 npn marking code cr 2N2222A JESD22-A101 JESD22-A102 JESD22-A103 JESD22-A113 2N2222A 331
    Text: INCH-POUND MIL-PRF-19500/672 30 April 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PLASTIC, NPN, SILICON, SWITCHING, TYPE 2N2222AUE1 JAN, JANTX, JANJ This specification is approved for use by all Departments and Agencies of the Department of Defense.


    Original     		PDF MIL-PRF-19500/672 2N2222AUE1 MIL-PRF-19500. OT-23 O-236) 2N2222AUE1 2N2222A JANTX 2N2222A JANTXV sot-23 npn marking code cr 2N2222A JESD22-A101 JESD22-A102 JESD22-A103 JESD22-A113 2N2222A 331

    manson

    Abstract: JESD22-A101 JESD22-A102 JESD22-A103 JESD22-A113
    Text: INCH-POUND MIL-PRF-19500/695 30 April 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PLASTIC, PNP, SILICON, SWITCHING, TYPE 2N4033UE1 JAN, JANTX, JANJ This specification is approved for use by all Departments and Agencies of the Department of Defense.


    Original     		PDF MIL-PRF-19500/695 2N4033UE1 MIL-PRF-19500. OT-23 O-236) manson JESD22-A101 JESD22-A102 JESD22-A103 JESD22-A113

    2n7513

    Abstract: 2N7512 MOS 6888 MIL-PRF19500 ON MARKING 3161
    Text: INCH-POUND MIL-PRF-19500/689 28 February 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TOTAL DOSE AND SINGLE EVENT EFFECTS TRANSISTOR, N-CHANNEL SILICON TYPES 2N7512, 2N7513, AND 2N7514 JANTXVD, R AND JANSD, R This specification is approved for use by all Departments


    Original     		PDF MIL-PRF-19500/689 2N7512, 2N7513, 2N7514 MIL-PRF-19500. 2n7513 2N7512 MOS 6888 MIL-PRF19500 ON MARKING 3161

    2N7219U JANTX

    Abstract: 2N7219U 2N7221U mos die 2N7218 2N7218U 2N7219 2N7221 2N7222 2N7222U
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 14 November 2002. MIL-PRF-19500/596E 14 August 2002 SUPERSEDING MIL-PRF-19500/596D 13 September 1996 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT,


    Original     		PDF MIL-PRF-19500/596E MIL-PRF-19500/596D 2N7218, 2N7219, 2N7221, 2N7222, 2N7218U, 2N7219U, 2N7221U, 2N7222U, 2N7219U JANTX 2N7219U 2N7221U mos die 2N7218 2N7218U 2N7219 2N7221 2N7222 2N7222U

    2N7380

    Abstract: 2N7381 T0-257AA
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 22 May 2002. INCH-POUND MIL-PRF-19500/614B 22 February 2002 SUPERSEDING MIL-PRF-19500/614A 3 May 1996 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR,


    Original     		PDF MIL-PRF-19500/614B MIL-PRF-19500/614A 2N7380 2N7381 2N7381 T0-257AA

    transistor tt 2206

    Abstract: TT 2206 transistor LT1817 transistor LT5817
    Text: MOTOROLA SC XSTRS/R F MbE D b3b?ES4 00=14220 1 «flO Tt, MOTOROLA • SEMICONDUCTOR TECHNICAL. DATA I n LT5817 The RF Line PNP S ilicon High Frequency Transistor Iq = —400 m A HIGH FREQUENCY HIGH VOLTAGE TRANSISTOR PNP SILICON . . . s p e cific a lly d esig ned fo r CR T d riv e r a p p lic a tio n s req u irin g h ig h v o lta g e and high


    OCR Scan     		PDF LT5817 LT1817 transistor tt 2206 TT 2206 transistor LT1817 transistor LT5817

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    2SK595

    Abstract: DDCH230 TRANSISTOR IFW transistor BC 552
    Text: SANYO SEMICONDUCTOR CORP 32E D ? tn ? 0 7 b DDCH230 T“29“25. - N-Channel Junction Silicon FE T 2025 .Vafc-.l'^ ,11,Itim _A T Capacitor Microphone Applications 2206 Features . Especially suited for use in audio, telephone capacitor microphones . Excellent voltage characteristic


    OCR Scan     		PDF DDCH230 T-29-25 T-91-20 SC-43 2SK595 TRANSISTOR IFW transistor BC 552

    transistor tt 2206

    Abstract: TT 2206 transistor diagram transistor tt 2206 TT 2206 TT 2206 pin FEATURES tt 2206 LAMBDA Voltage Regulator CURRENT12-3 LAS2212 Adjustable Positive Voltage Regulator 50v
    Text: A LAM BDA LIN EAR REGULATORS LAS 2 2 0 0 SERIES 5 AMP, 85 WATT POSITIVE HYBRID VOLTAGE REGULATORS ABSOLUTE MAXIMUM RATINGS PAR AM ETER SYM BOL M A X IM U M U N ITS VlN 40 Volts Input-Output Voltage Differential V,N-V0 37.5 Volts Power Dissipation' Input Voltage


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    VLN 2003a

    Abstract: bt 2025 2SK595
    Text: SANYO SEMICONDUCTOR CORP 32E D ? tn ? 0 7 b D D C H 230 T“29“25. 2025 .Vafc-.l'^ ,1 T N-Chanrrel Junction Silicon FET Capacitor Microphone Applications 2206 Features . Especially suited for use in audio, telephone capacitor microphones . Excellent voltage characteristic


    OCR Scan     		PDF 7tn707b D0CH230 T-29-25 T-91-20 SC-43 VLN 2003a bt 2025 2SK595

    TRANSISTOR C 3205

    Abstract: LAS5205 LT 5212 LAS 5215 Data LAS2212 voltage regulator 120 volt input 24 volt output 3205 transistor LAS 2112 LAS 5205 LT 7224
    Text: POWER HYBRID VOLTAGE REGULATOR-LAS 2100-7000 SERIES MAXIMUM RATINGS input Voltage Max i:i LAS 2200 Series 47 w atts at 100°C(;ASE LAS 3000 Series VlN Power Dissipation LAS 7000 LAS 5000 LAS 3000 LAS 2100 (4 pin) Fixed output LAS 2200 (14 pin) Adjustable output


    OCR Scan     		PDF 102mm TRANSISTOR C 3205 LAS5205 LT 5212 LAS 5215 Data LAS2212 voltage regulator 120 volt input 24 volt output 3205 transistor LAS 2112 LAS 5205 LT 7224

    transistor t2a

    Abstract: 2n2206 TRANSISTOR ztx312 transistor 2N2475 N706A BSX12 2N2206 J 2N2369 BSV24 BSV25
    Text: SILICON TRANSISTORS Planar Epitaxial High Speed Switching n-p-n Characteristics M axim um Ratings Type No. v CBO VCER Vebo P to t 25°C smb. fT min. Storajje Time t s ( i nax.) at l c mA MHz nS 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 20 150 150 10 200


    OCR Scan     		PDF BSY95A ZTX310, BSV23 ZTX311 BSV24 ZTX312, BSV25 ZTX313, BSV26 ZTX314, transistor t2a 2n2206 TRANSISTOR ztx312 transistor 2N2475 N706A BSX12 2N2206 J 2N2369

    equivalent for transistor tt 2206

    Abstract: equivalent transistor TT 2206 transistor tt 2206 MRF163 TT 2206 transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode . . . designed for wideband large-signal output and driver applications up to 400 MHz range. • Guaranteed 28 Volt, 400 MHz Performance Output Power = 25 Watts


    OCR Scan     		PDF MRF163, MRF163 AN215A equivalent for transistor tt 2206 equivalent transistor TT 2206 transistor tt 2206 TT 2206 transistor

    diagram transistor tt 2206

    Abstract: equivalent for transistor tt 2206 transistor tt 2206 equivalent transistor TT 2206 lm 2206 for frequency modulation overtone butler oscillator TT 2206 transistor variable inductor 13156DW murata crystal filter AM 455
    Text: M M O T O R O LA M C 13156 Advance Information W ideband FM IF System The MC13156 is a wideband FM IF subsystem targeted at high perfor­ mance data and analog applications. Excellent high frequency performance is achieved at low cost using Motorola’s MOSAIC 1.5'“ bipolar process. The


    OCR Scan     		PDF MC13156 MC13156DW 13156DW diagram transistor tt 2206 equivalent for transistor tt 2206 transistor tt 2206 equivalent transistor TT 2206 lm 2206 for frequency modulation overtone butler oscillator TT 2206 transistor variable inductor 13156DW murata crystal filter AM 455

    A5 GNE mosfet

    Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA


    OCR Scan     		PDF 1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


    OCR Scan     		PDF 1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503

    AC125K

    Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
    Text: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T


    OCR Scan     		PDF 76665N 76889N MA748PC MA709PC jA710PC A711PC iA712PC A723PC HA741PC A747PC AC125K 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram

    3866S

    Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
    Text: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series


    OCR Scan     		PDF 1020G N12861 N12B62 MN1381 MN13811 MN13821 15P0802 15P5402 58851A 70803A 3866S transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515

    transistors BC 557C

    Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
    Text: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and


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    LM1808

    Abstract: LM1800 TRANSISTOR LM371 ks2 6k MC7812CP LM3026 SN52101AJ transistor bf 175 LM170 Germanium drift transistor
    Text: Edge Index by Product Family Here is the new Linear Data Handbook from National. It gives complete specifications for devices useful in building nearly all types of electronic systems, from communications and consumer oriented circuits to precision instrumentation and computer designs.


    OCR Scan     		PDF LM741 MIL-M-38510, M-38510/ 10101BCC. MIL-M-38510 L-M-38510 LM1808 LM1800 TRANSISTOR LM371 ks2 6k MC7812CP LM3026 SN52101AJ transistor bf 175 LM170 Germanium drift transistor