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    TRANSISTOR TO63 Search Results

    TRANSISTOR TO63 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR TO63 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TO63 package

    Abstract: NTE71
    Text: NTE71 Silicon NPN Transistor High Current Amp, Fast Switch Description: The NTE71 is silicon NPN transistor in a TO63 stud mount package utilizing C2R processing that provides surface stabilization for high voltage operation and enhances long term reliability.


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    NTE71 NTE71 TO63 package PDF

    to63

    Abstract: NTE70 180v 250w
    Text: NTE70 Silicon NPN Transistor High Voltage Power Amp, Switch Description: The NTE70 is a silicon NPN transistor in a TO63 type case utilizing C2R processing which describes a manufacturing technology that provides surface stabilization for high voltage operation and enhances long term reliability.


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    NTE70 NTE70 to63 180v 250w PDF

    2N 326 Transistor

    Abstract: transistor ESM 3004 DARLINGTON ESM 30 npn 1000V 100a ESM4016 ESM 3004 transistor BU 184 transistor ESM 3001 transistor ESM 2060T darlington NPN 600V 8a transistor
    Text: SUPERSWITCH high power transistor MU 86 selector guide guide de sélection transistors grande puissance MU 86 SUPERSWITCH power transistor and darlington for TV applications selector guide guide de sélection transistors de puissance et darlingtons pour applications TV


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    130CIV 109DP O-220 104DP CB-70 2N 326 Transistor transistor ESM 3004 DARLINGTON ESM 30 npn 1000V 100a ESM4016 ESM 3004 transistor BU 184 transistor ESM 3001 transistor ESM 2060T darlington NPN 600V 8a transistor PDF

    1061 transistor

    Abstract: c 111 transistor NPN Transistor isolated
    Text: TABLE OF CONTENTS Poge Power Transistor Technology . 2 Type/Rage Locato r.


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    O-39/TO-5. O-114. O-111. 1061 transistor c 111 transistor NPN Transistor isolated PDF

    2N2464

    Abstract: TO-59 Package TO114 package SIS 672 2N2210 transistor 2N2210 TO111 package TO61 package 2N3725 ultra low noise NPN transistor
    Text: SME D GENERAL TRANSISTOR CORP BTaöODl 00QG07M Q General Transistor Corporation 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 SMALL SIGNAL TRANSISTORS NPN General Purpose Typ» No, Plot (mW) VCEO


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    3T5fl001 2N720A 2N915 2N916 2N956 2N2221 2N2221A 2N2222 2N2222A 2N3700 2N2464 TO-59 Package TO114 package SIS 672 2N2210 transistor 2N2210 TO111 package TO61 package 2N3725 ultra low noise NPN transistor PDF

    2N2464

    Abstract: transistor 2n2270 2N6369 D 756 transistor
    Text: GENERAL TRANSISTOR CORP 2ME D • BTaflODl 00QD074 0 ■ General Transistor Corporation "T 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 SMALL S IG N A L TRANSISTORS NPN General Purpose Typ» No,


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    00QD074 100TT T0-102 2N2464 transistor 2n2270 2N6369 D 756 transistor PDF

    adc 515

    Abstract: MJ7000
    Text: MJ7000 SILICON 30 AMPERE POWER TRANSISTOR HIGH-POWER NPN SILICON TRANSISTOR NPN SILICON . . . designed for use in industrial power amplifier and switching circuits applications. 100 V O L T S 150 W ATTS High DC Current Gain — h f E = 20-100 @ l c = 10 Adc


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    MJ7000 adc 515 MJ7000 PDF

    2N4839

    Abstract: TO114 package 2N5860 2N1724A 2N3714 2N3715 2N3716 2N3789 2N3790 2N3792
    Text: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 DODOD^ fi ■ General Transistor Corporation CASE TO-3, TO-39 lc MAX =3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3 - o i


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    2N3789 2N3713 2N3790 2N3714 2N3791 2N3715 2N3792 050-H O-107 O-126 2N4839 TO114 package 2N5860 2N1724A 2N3716 PDF

    2N5302 EB

    Abstract: 2N1463 2n4271
    Text: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 D O D O D ^ fi ■ General Transistor Corporation CASE TO-3,TO-39 lc MAX = 3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3


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    SaD01 2N37S9 2N3790 2N3792 2N4398 2N4399 2N4902 2N4903 2N4904 2N4905 2N5302 EB 2N1463 2n4271 PDF

    SILICON TRANSISTOR CORP

    Abstract: NPN 200 VOLTS 20 Amps POWER TRANSISTOR npn 331 STS410 STS660 free pnp and npn transistor STS409 STS430 SDN22302 SDN22311
    Text: 88D 00799 D T '3 3 -13 flfl DE |fl554D22 D D D O ? ^ =] 8254022 S I L ICON TRANSISTOR CORP S I L I C Ò T TRANSISTOR CORP VCEO SUS Polarity lc Max Am ps SDN22301 SDN22302 SDN22311 SDN22312 SDN22313 NPN NPN NPN NPN NPN 5.0 5.0 5.0 5.0 5.0 150 250 150 250 350


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    flaS402E SDN22301 SDN22302 SDN22311 SDN22312 SDN22313 SRSP4296 SRSP4297 SRSP4298 SRSP4299 SILICON TRANSISTOR CORP NPN 200 VOLTS 20 Amps POWER TRANSISTOR npn 331 STS410 STS660 free pnp and npn transistor STS409 STS430 PDF

    2n5863

    Abstract: MJ2965 TO61 package 12J5 2N8307 2n3713 2N4901 2n3447
    Text: GENERAL TRANSISTOR CÔRP 54E D • 3=120001 OOOOObl 5 General Transistor Corporation CASE T -3 3 -0 1 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 T O -3 Ic(M A X ) a 2 - 5 0 A y\A^EO(sus) : ~ ^ 5 - 5 0 0 V


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    0QD007fl T0-102 2n5863 MJ2965 TO61 package 12J5 2N8307 2n3713 2N4901 2n3447 PDF

    transistor ESM 3004

    Abstract: ESM3004 ESM 3004 2060T transistor ESM 2060T transistor WLM transistor ESM 30 transistor ESM 3001 ESM 3005 npn 1000V 100a
    Text: SUPERSWITCH transistor T 0 -2 2 0 AB selector guide guide de sélection transistors TO-220 AB SUPERSWITCH \v c E O s u s \ VCEX 90V 120V 200V 400V 180V 240V 400V 850V Casa 'C(sat) 12 A 8 A 6 A BUV 26 BUV 27 BUV 28 2,5 A BUV 46 1 BUV 36 A w SUPERSWITCH power transistor TO-83 selector guide


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    O-220 00V-600V 1000T 2060T CB-70 transistor ESM 3004 ESM3004 ESM 3004 2060T transistor ESM 2060T transistor WLM transistor ESM 30 transistor ESM 3001 ESM 3005 npn 1000V 100a PDF

    Untitled

    Abstract: No abstract text available
    Text: 8254022 SILICON TRANSISTOR CORP NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Type 2N5733 2N5734 2N5737 2N5738 2N5739 2N5740 2N5741 2N5742 2N5743 2N5744 2N5745 2N5758 2N5759 2N5760 2N5784 2N5785 2N5786 2N5804 2N5805 2N5838 2N5839 2N5840


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    2N5733 2N5734 2N5737 2N5738 2N5739 2N5740 2N5741 2N5742 2N5743 2N5744 PDF

    2N3847

    Abstract: 1000C 2N3846 TO63 package
    Text: TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/412 Devices Qualified Level 2N3846 JAN JANTX JANTXV 2N3847 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation


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    MIL-PRF-19500/412 2N3846 2N3847 1000C 1750C 1000C; Mil-PRF-19500/412) 2N3847 1000C 2N3846 TO63 package PDF

    1000C

    Abstract: 2N3847 2N3846
    Text: TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/412 Devices Qualified Level 2N3846 JAN JANTX JANTXV 2N3847 MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation


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    MIL-PRF-19500/412 2N3846 2N3847 1000C 1000C; Mil-PRF-19500/412) 2N3847 1000C 2N3846 PDF

    powertech

    Abstract: No abstract text available
    Text: “BIG IDEAS IN PowerTech big pow er - • 40 AMPERES PT-3526 HIGH VOLTAGE SILICON NPIM TRANSISTOR FEATURES V c E s a t . 0.5V @ 20A h p E . V b E . 1.5V @ 2 0 A t f .


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    PT-3526 100/uA powertech PDF

    transistor b 1624

    Abstract: b 1624 transistor to66 mica TO-62 c 4663 4634 4705 to220 mica TO36 package 4683
    Text: TRANSISTOR MOUNTING KITS m • COMPLETE KITS OR INDIVIDUAL HARDWARE • PRE PACKAGED • UNIFORM HARDWARE AT LOW COST These pre-packaged universal mounting kits provide all the necessary hardware and insulators required to securely mount the semiconductor


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    SDT55456

    Abstract: SDT55472 SDT55560 to63 400v
    Text: Devices. Inc VERY HIGH VOLTAGE, HIGH CURRENT CHIP N UM BER NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR* CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold Polished silicon or "Chrome Nickel Silver" also available Also available on:


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: “BIG IDEAS IN BIG POWER ” • ■ ■ PowerTech ■ 40 AMPERES PT-3526 HIGH VOLTAGE SILICON NPN TRANSISTOR FEATURES V c E s a t . 0.5V @ 20A h p E . 5 m in. @ 4 0 A I s / B .


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    PT-3526 300jusec 100/iA PDF

    74c74

    Abstract: No abstract text available
    Text: -JSntnm [p[M>}[p yj Tr ©ÄTTÄIL ( MEDIUM VOLTAGE, FAST SWITCHING Devices. Inc NPN EPITAXIAL/TRIPLE DIFFUSED PLANAR POWER TRANSISTOR* * (FORMERLY 86) CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or “Chrome Nickel Silver" also available)


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    305mm) 74c74 PDF

    100 amp power transistor

    Abstract: NPN transistor Ic 50A 2N5926 NPN 20 Amps POWER TRANSISTOR to63 NPN 1.5 AMPS POWER TRANSISTOR NPN 200 VOLTS 20 Amps POWER TRANSISTOR to 63 case 5 amp npn transistor NPN 25 Amps POWER TRANSISTOR to63
    Text: SFT5926/63 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET 150V, 100 AMP POWER TRANSISTOR SILICON NPN Part Number / Ordering Information 1/


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    SFT5926/63 SFT5926 2N5926 TR0115A 100 amp power transistor NPN transistor Ic 50A 2N5926 NPN 20 Amps POWER TRANSISTOR to63 NPN 1.5 AMPS POWER TRANSISTOR NPN 200 VOLTS 20 Amps POWER TRANSISTOR to 63 case 5 amp npn transistor NPN 25 Amps POWER TRANSISTOR to63 PDF

    MT1115

    Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
    Text: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir


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    108th MT1115 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117 PDF

    powertech

    Abstract: No abstract text available
    Text: BIG IDEAS IN BIG POWER • PowerTech 70 AMPERES FT-3512 FT-3513 HIGH VOLTAGE SILICON IMPIM TRANSISTOR FEATURES v,CE sat ' 0 .5V @ 30A V B E .1.2V @ 3 0 A h p g . 5 min. @ 70A t f . 0.5 Msec.


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    FT-3512 FT-3513 PT-3512 PT-3513 100MA powertech PDF

    FED-STD-H28A

    Abstract: 2N3847 412e 2N3846
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 30 July 2009. INCH-POUND MIL-PRF-19500/412E 30 April 2009 SUPERSEDING MIL-PRF-19500/412D 7 February 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER,


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    MIL-PRF-19500/412E MIL-PRF-19500/412D 2N3846, 2N3846T1, 2N3846T3, 2N3847, 2N3847T1, 2N3847T3, MIL-PRF-19500. FED-STD-H28A 2N3847 412e 2N3846 PDF