TRANSISTOR TO-92 S8050 Search Results

TRANSISTOR TO-92 S8050 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SC6026MFV		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR TO-92 S8050 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor TO-92 S8050 Abstract: transistor S8050 S8050 BR S8050 S8050 transistor TO-92 S8050 equivalent S8050 TRANSISTOR NPN FEATURES S8550 S8550 equivalent S8050 TO-92 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S8050 TO-92 TRANSISTOR NPN FEATURES z Complimentary to S8550 z Collector current: IC=0.5A 1.EMITTER 2.BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter	Original	S8050 S8550 500mA 500mA, 30MHz transistor TO-92 S8050 transistor S8050 S8050 BR S8050 S8050 transistor TO-92 S8050 equivalent S8050 TRANSISTOR NPN FEATURES S8550 S8550 equivalent S8050 TO-92	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S8050 TO-92 TRANSISTOR NPN FEATURES z Complimentary to S8550 z Collector current: IC=0.5A 1.EMITTER 2.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter	Original	S8050 S8550 500mA 500mA, 30MHz	PDF
Untitled Abstract: No abstract text available Text: TO-92 Plastic-Encapsulate Transistors S8050 TRANSISTOR NPN TO-92 FEATURES Power dissipation PCM: 1. EMITTER 0.625 2. COLLECTOR W (Tamb=25℃) 3. BASE Collector current 0.5 A ICM: Collector-base voltage 40 V V(BR)CBO: Operating and storage junction temperature range	Original	S8050 500mA 500mA, 30MHz	PDF
Untitled Abstract: No abstract text available Text: FORWARD INTERNATIONAL ELECTRONICS LTD. S8050 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER Package: TO-92 * Complement to S8550 * Collector Current :Ic=500mA * High Total Power Dissipation: pC=625mW ABSOLUTE MAXIMUM RATINGS at Tamb=250C	Original	S8050 S8550 500mA 625mW 100uA 500mA	PDF
Untitled Abstract: No abstract text available Text: FORWARD INTERNATIONAL ELECTRONICS LTD. S8550 SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER Package: TO-92 * Complement to S8050 * Collector Current :Ic=-500mA * High Total Power Dissipation: pC=625mW ABSOLUTE MAXIMUM RATINGS at Tamb=250C	Original	S8550 S8050 -500mA 625mW -100uA -50mA -500mA	PDF
Untitled Abstract: No abstract text available Text: S8050T NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 3.5 ±0.2 4.55±0.2 4.5±0.2 FEATURES Power dissipation O 0.625 W Tamb=25 C 14.3 ±0.2 PCM: Collector current	Original	S8050T 01-Jun-2002	PDF
s8050 d h Abstract: NPN S8550 s8550 npn transistor s8050 s8550 d h S8550 D S8550 equivalent S8050 S8550 S8050 npn Text: S8050 NPN EPITAXIAL SILICON TRANSISTOR High Current Application High Collector Curre nt Ic=700mA TO- 92 High Collector P owe r Dissipa tion P c=625mW Comple mentary to S8550 ABS OLUTE MAXIMUM RATINGS Characteristic Ta =25 Symbol Value Unit Collector-Ba s e Volta ge	Original	S8050 700mA 625mW S8550 100mA 500mA 500mA, s8050 d h NPN S8550 s8550 npn transistor s8050 s8550 d h S8550 D S8550 equivalent S8050 S8550 S8050 npn	PDF
S8050 TRANSISTOR Abstract: transistor s8050 BR S8050 S8050 NPN Power Transistor s8050 S8050 equivalent S8050 TRANSISTOR NPN FEATURES s8050 npn transistor br s8050 d .s8050 transistor Text: S8050 S8050 TRANSISTOR NPN TO-92 FEATURES Power dissipation PCM: 1. EMITTER 0.625 2. BASE W (Tamb=25℃) 3. COLLECTOR Collector current ICM: 0.5 A Collector-base voltage 40 V V(BR)CBO: Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55℃ to +150℃	Original	S8050 500mA 500mA, 30MHz S8050 TRANSISTOR transistor s8050 BR S8050 S8050 NPN Power Transistor s8050 S8050 equivalent S8050 TRANSISTOR NPN FEATURES s8050 npn transistor br s8050 d .s8050 transistor	PDF
S8050 Abstract: S8050 TRANSISTOR BR S8050 transistor S8050 transistor D S8050 s8050 d h S8050 equivalent transistor TO-92 S8050 1000I S8050 TO-92 Text: S8050 TO-92 Plastic-Encapsulate Transistors Transistor NPN FEATURES Power dissipation o P CM :0.625 W (Tamb=25 C) Collector current I CM :0.5 A Collector-base voltage V (BR)CBO :40 V Operating and storage junction temperature range o o T J ,T stg :-55 C to +150 C	Original	S8050 S8050 S8050 TRANSISTOR BR S8050 transistor S8050 transistor D S8050 s8050 d h S8050 equivalent transistor TO-92 S8050 1000I S8050 TO-92	PDF
s8050 d h Abstract: TIC 160 D S8550 equivalent S8050 s8550 d h S8050 equivalent transistor TO-92 S8050 transistor s8050 c S8050 TRANSISTOR transistor s8050 Text: S8550 P NP EP ITAXIAL S ILICON TRANSISTOR High Current Application High Collector curre nt Ic= -700mA TO- 92 High Collector P owe r Dissipa tion P c=625mW Comple me ntary to S8050 ABS OLUTE MAXIMUM RATINGS Ta =25 S ymbol Value Unit Collector-Ba s e Volta ge	Original	S8550 -700mA 625mW S8050 -100mA -500mA -500mA -50mA s8050 d h TIC 160 D S8550 equivalent S8050 s8550 d h S8050 equivalent transistor TO-92 S8050 transistor s8050 c S8050 TRANSISTOR transistor s8050	PDF
S8050 equivalent Abstract: S8050 TRANSISTOR BR S8050 transistor s8050 transistor TO-92 S8050 S8050 pnp transistor D S8050 .s8050 transistor S8050 transistor TO-92 S8050 wing shing Text: S8050 TRANSISTOR PNP TO-92 FEATURES Power dissipation PCM : 0.625 W（Tamb=25℃） Collector current A ICM : 0.5 Collector-base voltage V(BR)CBO : 40 V 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 CHARACTERISTICS（（Tamb=25℃ ℃ ELECTRICAL Parameter Collector-base	Original	S8050 500mA 500mA, 100mA 30MHz S8050 equivalent S8050 TRANSISTOR BR S8050 transistor s8050 transistor TO-92 S8050 S8050 pnp transistor D S8050 .s8050 transistor S8050 transistor TO-92 S8050 wing shing	PDF