TRANSISTOR TO-92 8550 Search Results

TRANSISTOR TO-92 8550 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR TO-92 8550 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
NPN transistor 8050s Abstract: 8050S 8550S Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8050S TO-92 TRANSISTOR NPN FEATURES z Complimentary to 8550S z Collector current: IC=0.5A 1.EMITTER 2.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol	Original	8050S 8550S 500mA 500mA, 30MHz NPN transistor 8050s 8050S 8550S	PDF
8050S Transistor Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 8050S TRANSISTOR NPN FEATURES 1.EMITTER z Complimentary to 8550S z Collector Current: IC=0.5A 2.COLLECTOR 3.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)	Original	8050S 8550S 500mA 500mA, 30MHz 8050S Transistor	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 8550SS TRANSISTOR PNP 1.EMITTER FEATURES z General Purpose Switching and Amplification. 2.COLLECTOR 3.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)	Original	8550SS -100mA -800mA -800mA -80mA -50mA 30MHz	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 8550S TRANSISTOR PNP FEATURE Excellent hFE linearity 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit	Original	8550S -100uA, -50mA -500mA -500mA, -20mA 30MHz	PDF
8550S Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8550S TRANSISTOR PNP TO-92 FEATURE Excellent hFE linearity 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value	Original	8550S -100uA, -50mA -500mA -500mA, -20mA 30MHz	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8550S TRANSISTOR PNP TO-92 FEATURE Power dissipation PCM: 0.625 1.EMITTER W (Tamb=25℃) 2. COLLECTOR Collector current -0.5 A ICM: Collector-base voltage -40 V V(BR)CBO:	Original	8550S -50mA -500mA -500mA, -20mA 30MHz	PDF
Untitled Abstract: No abstract text available Text: TO-92 Plastic-Encapsulate Transistors 8550S TRANSISTOR PNP TO-92 FEATURE Power dissipation PCM: 0.625 1.EMITTER W (Tamb=25℃) 2. COLLECTOR Collector current -0.5 A ICM: Collector-base voltage -40 V V(BR)CBO: Operating and storage junction temperature range	Original	8550S -50mA -500mA -500mA, -20mA 30MHz	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 8550SS Plastic-Encapsulate Transistors TRANSISTOR PNP TO-92 FEATURES 1. EMITTER Power dissipation PCM : 1 W 2. COLLECTOR (TA=25℃) 3. BASE 1 2 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol	Original	8550SS -100mA -800mA -800mA, -80mA -10mA -50mA -30MHZ	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8550SS TRANSISTOR PNP TO-92 FEATURES Power dissipation PCM: 1 W (Tamb=25℃) 1. EMITTER Collector current ICM: -1.5 A - 40 V 2. COLLECTOR Collector-base voltage V(BR)CBO:	Original	8550SS -800mA, -50mA	PDF
Untitled Abstract: No abstract text available Text: TO-92 8550SS Plastic-Encapsulate Transistors TRANSISTOR PNP TO-92 FEATURES 1. EMITTER Power dissipation PCM : 1 W 2. COLLECTOR (TA=25℃) 3. BASE 1 2 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage	Original	8550SS -100mA -800mA -800mA, -80mA -10mA -50mA -30MHZ	PDF
bc 558 equivalent Abstract: pnp transistor 9015 transistor BC 557 equivalent transistor 8550 BC 9015 transistor 2SA733 equivalent 2SA561 equivalent 2SA733 transistor equivalent transistor bc 558 2SA562 equivalent Text: 1 of 1 HONEY TO-92 Transistors Japan Type Equivalent Table PNP Silicon Epitaxial Planar Transistor To-92 Plastic Package JAPAN HONEY JAPAN HONEY JAPAN HONEY 2SA467 HN / BC 327 / 8550 2SA578 HN / BC 560 / 9015 2SA721 HN / BC 559 / 9015 2SA494 HN / BC 559 / 9015	Original	To-92 2SA467 2SA578 2SA721 2SA494 2SA579 2SA723 2SA495 2SA608 2SA724 bc 558 equivalent pnp transistor 9015 transistor BC 557 equivalent transistor 8550 BC 9015 transistor 2SA733 equivalent 2SA561 equivalent 2SA733 transistor equivalent transistor bc 558 2SA562 equivalent	PDF
transistor+8550ss Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 8550SS Plastic-Encapsulate Transistors TRANSISTOR PNP TO-92 FEATURES 1. EMITTER 2. BASE Power dissipation PCM : 1 W (TA=25℃) : 2 W (TC=25℃) 3. COLLECTOR 1 2 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted	Original	8550SS -100mA -800mA -800mA, -80mA -10mA -50mA -30MHZ transistor+8550ss	PDF
equivalent transistor 8550 Abstract: 2sa1015 equivalent 8550 pnp transistor Bc 8550 9015 transistor transistor BC 557 TRANSISTOR BC 327 PNP 8550 9015 pnp transistor 9015 Text: 1 of 1 HONEY TO-92 Transistors Japan Type Equivalent Table PNP Silicon Epitaxial Planar Transistor To-92 Plastic Package JAPAN HONEY JAPAN HONEY JAPAN HONEY 2SA853 HN / BC 559 / 9015 2SA978 HN / BC 560 / 9015 2SA1318 HN / BC 556 / 9015 2SA854 HN / BC 327 / 8550	Original	To-92 2SA853 2SA978 2SA1318 2SA854 2SA987 2SA1323 2SA855 2SA989 2SA1334 equivalent transistor 8550 2sa1015 equivalent 8550 pnp transistor Bc 8550 9015 transistor transistor BC 557 TRANSISTOR BC 327 PNP 8550 9015 pnp transistor 9015	PDF
8550SL Abstract: transistor marking B9 MARKING B9 sot-23 8550S UTC 8550SL Text: UNISONIC TECHNOLOGIES CO., LTD 8550S PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR 3 1 2 SOT-23 FEATURES Collector current up to 700mA Collector-Emitter voltage up to 20 V Complimentary to 8550S 1 TO-92 Pb-free plating product number: 8550SL	Original	8550S OT-23 700mA 8550SL 8550S-x-AE3-R 8550SL-x-AE3-R 8550S-x-T92-B 8550SL-x-T92-B 8550S-x-T92-K 8550SL transistor marking B9 MARKING B9 sot-23 8550S UTC 8550SL	PDF

8550SS Abstract: transistor 8550ss Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8550SS TRANSISTOR（ PNP ） TO—92 FEATURES Power dissipation PCM : 1W （Tamb=25℃） 1.EMITTER Collector current ICM: -1.5 A Collector-base voltage 2. COLLECTOR 3. BASE	Original	8550SS O--92 270TYP 050TYP 8550SS transistor 8550ss	PDF
8550SST Abstract: 8550SS k 1 transistor Text: 8550SST -1.5A , -40V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES  General Purpose Switching and Amplification. G H Emitter Collector Base	Original	8550SST 8550SST-B 8550SST-C 8550SST-D -100mA -800mA -800mA, -80mA 8550SST 8550SS k 1 transistor	PDF
transistor 8550S Abstract: 8550S 500ma 40v pnp Text: PNP TRANSISTOR 8550S -0.5A Power Dissipation: 0.625W Collector Current: -0.5A Collector-Base Voltage: -45V TO-92 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS（Ta=25℃） PARAMETERS SYMBOL MIN TYP MAX UNIT CONDITION Collector-Emitter Breakdown Voltage BVceo	Original	8550S -100uA -100A -500mA, -50mA transistor 8550S 8550S 500ma 40v pnp	PDF
PNP transistor 8550 Abstract: transistor 8550 8550 pnp transistor PNP 8550 8550 pnp he 8550 pnp transistor c 8550 transistor 8550 transistor Text: PNP TRANSISTOR 8550 -1.5A Power Dissipation: 1.0W Collector Current: -1.5A Collector-Base Voltage: -45V TO-92 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS（Ta=25℃） PARAMETERS SYMBOL MIN TYP MAX UNIT CONDITION Collector-Emitter Breakdown Voltage BVceo	Original	-100uA -100A -1500mA, -50mA PNP transistor 8550 transistor 8550 8550 pnp transistor PNP 8550 8550 pnp he 8550 pnp transistor c 8550 transistor 8550 transistor	PDF
s 8550 d Abstract: Bc 8550 transistor 8550 transistor bc 8550 8550 transistor PNP 8550 8550D transistor PNP transistor 8550 PNP transistor TO-92 BC 8550c Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTOR 8550 SR12 TO-92 Plastic Package E BC ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL VCEO VALUE 25 UNITS	Original	C-120 190505E s 8550 d Bc 8550 transistor 8550 transistor bc 8550 8550 transistor PNP 8550 8550D transistor PNP transistor 8550 PNP transistor TO-92 BC 8550c	PDF
Untitled Abstract: No abstract text available Text: 8550S PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 4.5±0.2 Power dissipation 0.625 W Tamb=25 C 14.3 ±0.2 PCM: Collector current ICM: 3.5 ±0.2 4.55±0.2 FEATURES	Original	8550S 01-Jun-2002	PDF
datasheet of ic 555 Abstract: IC 555 datasheet ic 555 8550S Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8550S TRANSISTOR（ PNP ） TO—92 FEATURE Power dissipation PCM : 0.625 W（Tamb=25℃） Collector current ICM : -0.5 A Collector-base voltage V BR CBO : -40 V Operating and storage junction temperature range	Original	8550S O--92 -100A 30MHz 270TYP 050TYP datasheet of ic 555 IC 555 datasheet ic 555 8550S	PDF
8550SS Abstract: transistor 8550ss IC800 ic 800 IB-80 Text: 8550SS 8550SS TRANSISTOR PNP TO-92 FEATURES Power dissipation PCM: 1 W (Tamb=25℃) 1. EMITTER Collector current ICM: -1.5 A - 40 V 2. COLLECTOR Collector-base voltage V(BR)CBO: 3. BASE Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55℃ to +150℃	Original	8550SS -800mA, -50mA 8550SS transistor 8550ss IC800 ic 800 IB-80	PDF
diode st 4148 Abstract: ST 4148 LL4148 st 8050 sot-23 st 8050 9016 transistor 9014 SOT 23 4148 st TRANSISTOR 4148 1N4001-1N4007 Text: TRANSISTOR & DIODE Transistor -S T 8050 - 1.5A TO-92 - ST 8050 (TO-92) - ST 8550 - 1.5A (TO-92) - ST 8550 (TO-92) - ST 9011 (TO-92) - ST 9012 (TO-92) - ST 9013 (TO-92) - ST 9014 (TO-92 -S T 9015 (TO-92) - ST 9016 (TO-92) -S T 9018 (TO-92) o - MMBT8050LT1 -1.5A (SOT-23)	OCR Scan	MMBT8050LT1 OT-23) -LL4001-LL4007 -LL4148 1N4001-1N4007 diode st 4148 ST 4148 LL4148 st 8050 sot-23 st 8050 9016 transistor 9014 SOT 23 4148 st TRANSISTOR 4148	PDF
Untitled Abstract: No abstract text available Text: FORWARD INTERNATIONAL ELECTRONICS LTD. SEMICONDUCTOR TECHNICAL DATA 8550 PNP EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION Package: TO-92 * Complement to 8050 * Collector Current: lc—1.5A * Collector Dissipation Pc=lW TtoF=25°C	OCR Scan	-100uA 100mA -800mA -800mA -80mA -10mA -50mA	PDF

TRANSISTOR TO-92 8550 Search Results

TRANSISTOR TO-92 8550 Result Highlights (5)

TRANSISTOR TO-92 8550 Datasheets Context Search

NPN transistor 8050s

8050S Transistor

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8550S

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bc 558 equivalent

transistor+8550ss

equivalent transistor 8550

8550SL

8550SS

8550SST

transistor 8550S

PNP transistor 8550

s 8550 d

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datasheet of ic 555

8550SS

diode st 4148

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