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    TRANSISTOR TL 431 Search Results

    TRANSISTOR TL 431 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR TL 431 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor WL 431

    Abstract: S M R2632 transistor substitution chart SMD IC TL 431 saw resonator r2632 R2632 CR2031 R2632 resonator saw Colpitts circuit design A65 SMD
    Text: National Semiconductor Application Note 1021 December 1995 INTRODUCTION In the recent years short range unlicensed RF links have become very popular for a wide variety of applications in the field of remote control data exchange keyless entry systems and others The most popular frequency in Europe for


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    IC 741 OPAMP

    Abstract: SAA 1251 7106CPL TDA2620 SAA1121 LM 4440 AUDIO AMPLIFIER CIRCUIT touch dimmer TC 306H TDA 2310 TDA 2060 7107CPL
    Text: Lineaire IC’s Lineaire IC’s dil to 99 dil 8 to 99 dil 18 to 78 to 99 dil 20 to 99 cer dip to 78 Wij leveren een groot aantal lineaire ic's uit voorraad. Kunt u een bepaald type niet vinden, aarzel dan niet ons telefonisch te raadplegen. Veelal kunnen wij u op korte


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    pth resistors datasheet

    Abstract: ST014 SMA Connector Spice 11A72 tl 555 c TRANSISTOR BTL POWER AMPLIFIER AN-738 C1995 DS3883 ST05
    Text: National Semiconductor Application Note 738 Stephen Kempainen January 1991 The Futurebus a backplane is a complex electrical environment that consists of many circuit elements The modeling of such an environment can become time consuming and expensive The Futurebus a Electrical Task Group Expert


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    PDF 20-3A pth resistors datasheet ST014 SMA Connector Spice 11A72 tl 555 c TRANSISTOR BTL POWER AMPLIFIER AN-738 C1995 DS3883 ST05

    c125t

    Abstract: Ho3 501 transistor dtc323tu 94S-751-C343T transistor PNP A124G transistor KD 503 DTC343 kd 2902 kd 503 transistor DTC143TK
    Text: Transistors Digital transistors built-in resistors DTA114TE/DTA114TUA/DTA114TKA/DTA114TSA @Features 1) Built-in bias resistors enable the @External dimensions (Units: mm) DTAll4TE configuration of an inverter circuit without connecting external input resistors (see the equivalent cir-


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    PDF DTA114TE/DTA114TUA/DTA114TKA/DTA114TSA 005-Lr DTA114TUA DTC343TS -50mA, f-100MHz 50/1A rat10 C343T) c125t Ho3 501 transistor dtc323tu 94S-751-C343T transistor PNP A124G transistor KD 503 DTC343 kd 2902 kd 503 transistor DTC143TK

    S 170 MOSFET TRANSISTOR

    Abstract: transistor w 431 PDF Datasheets CMT20N50 CMT20N50N3P td 6950
    Text: CMT20N50 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination ! Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability ! Avalanche Energy Specified without degrading performance over time. In addition, this


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    PDF CMT20N50 S 170 MOSFET TRANSISTOR transistor w 431 PDF Datasheets CMT20N50 CMT20N50N3P td 6950

    TRANSISTOR TL 431

    Abstract: CMT20N50 CMT20N50N3P
    Text: CMT20N50 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination ! Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability ! Avalanche Energy Specified without degrading performance over time. In addition, this


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    PDF CMT20N50 TRANSISTOR TL 431 CMT20N50 CMT20N50N3P

    zener 431

    Abstract: 1N5518 1N5519 1N5520 1N5521 1N5522 1N5523 1N5524 1N5525 1N5526
    Text: 2848352 DIODE TRANSISTOR CO A4 DE|afl4flBS2 DDDGltM 4 INC 84D 00 164 D T ‘ tl- ¿>1 | LOW VOLTAGE AVALANCHE ZENER DIODES These low voltage avalanche zener diodes are specifically designed for low current, low noise applica­ tions. The very sharp knees, low leakages, and low impedances at low currents make them ideal for voltage


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    PDF 250uA Coefficient01 1N5546 1N6082 1N6083 1N6084 1N6085 1N6086 1N6087 1N6088 zener 431 1N5518 1N5519 1N5520 1N5521 1N5522 1N5523 1N5524 1N5525 1N5526

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bbSB'lBl QQE'iBHB 17S • IAPX BLW50F b'JE D H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended fo r use in class-A, AB and B operated, industrial and military transmitters in the h.f. and v.h.f. band. Resistance stabilization provides


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    PDF BLW50F E13S1

    national semiconductor lm334

    Abstract: No abstract text available
    Text: SflE D • b5G112M 0074410 Rôt « N S C S J"3ò-Cn LM134/LM234/LM334 NATL SEMICOND LINEAR 03 National m M Semiconductor LM134/LM234/LM334 3-Terminal Adjustable Current Sources General Description The LM 134/LM234/LM334 are 3-terminal adjustable cur­ rent sources featuring 10,000:1 range in operating current,


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    PDF b5G112M LM134/LM234/LM334 134/LM234/LM334 LM134/LM234/LM334 TL/H/5697-21 TL/H/5697-22 LM134. TL/H/5697-23 TL/H/5697-9 national semiconductor lm334

    LM7915CK

    Abstract: LM7905CK LM7912CK LM79XX lm7905ct LM7908CT LM7905 to3 LM7915CK to3
    Text: LM79XX SflE D • b 5 D 1 1 2 M 007b4fl4 72T M N S C B SHNational mm Semiconductor NATL S E M I C O N D LINEAR T -5 8 -1 1 - (3 LM79XX Series 3-Terminal Negative Regulators General Description The LM79XX series of 3-terminal regulators is available with


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    PDF 007b4fl4 LM79XX LM79XX T0-220 TL/H/7340-12 b5D112M TL/H/7340-13 LM7915CK LM7905CK LM7912CK lm7905ct LM7908CT LM7905 to3 LM7915CK to3

    ic TT 2222

    Abstract: transistor tt 2222 BLY89A TT 2222 npn Transistor bly89a TT 2222 npn 2222 transistor yl 3710 dfv 36 mb 3712
    Text: N AMER PHILIPS/DISCRETE GbE D 86D 0 1910 ^5 3 = 1 3 1 D T - G o m m a 3 3 5 -« BLY89A V.H.F. POW ER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized. Every


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    PDF BLY89A PL-25W ic TT 2222 transistor tt 2222 BLY89A TT 2222 npn Transistor bly89a TT 2222 npn 2222 transistor yl 3710 dfv 36 mb 3712

    BUV18

    Abstract: transistor buv 90 BUV19 transistor buv BUV18-BUV19
    Text: •_?52T237 QD2Ô>71J? 'T '3 'S - I S SGS -THOMSON S G S-THOMSON BUV18 BUV19 3QE » NPN HIGH CURRENT SWITCHING TRANSISTORS HIGH EFFICIENCY SWITCHING VERY LOW SATURATION VOLTAGE AT 40A FAST TURN-OFF AND TURN-ON DESC RIPTIO N High current, high speed transistors suited for low


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    PDF T-33-IS BUV18 BUV19 lr-/ln-10 18-BUV transistor buv 90 BUV19 transistor buv BUV18-BUV19

    Philips 4312 020

    Abstract: ferroxcube wideband hf choke transistor 4312 BLT53 philips Trimmer 60 pf philips capacitor 470 philips transistor UHF POWER TRANSISTOR UHF POWER transistor d 1991 ar
    Text: 711002b Q O b E b m PHILIPS INTERNATIONAL UHF power transistor FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability • Withstands full load mismatch. IPHIN 0G1 Product specification


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    PDF 711002b BLT53 OT122 OT122D MCD200 MCD20 Philips 4312 020 ferroxcube wideband hf choke transistor 4312 BLT53 philips Trimmer 60 pf philips capacitor 470 philips transistor UHF POWER TRANSISTOR UHF POWER transistor d 1991 ar

    uc3807

    Abstract: BLF221 71005 TRANSISTOR 237N BLF221 application International Power Sources VHF transmitter circuit philips resistor 2322 potentiometer 5k PHILIPS 2322
    Text: Philips Semiconductors Product specification HF/VHF power MOS transistor BLF221 SbE D PHILIPS INTERNATIONAL 7110ö5b 004374D 147 « P H I N T-3 FEATURES PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability


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    PDF BLF221 O-39/3) 004374D MSB009- MB8072' mu711Dfl2b MC9804 uc3807 BLF221 71005 TRANSISTOR 237N BLF221 application International Power Sources VHF transmitter circuit philips resistor 2322 potentiometer 5k PHILIPS 2322

    2322151

    Abstract: M8807 philips 2222 115 13102 BLF221B URA310 philips resistor 2322 BLF221
    Text: tjbS3R31 Philips Sem iconductors OQE^Ql 101 MAPX Preliminary specification HF/VHF power MOS transistor BLF221B N AMER PHILIPS/DISCRETE FEATURES b=JE » PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability


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    PDF bbS3T31 BLF221B MSB009- MBA379 URA310 2322151 M8807 philips 2222 115 13102 BLF221B URA310 philips resistor 2322 BLF221

    MCD195

    Abstract: UHF POWER TRANSISTOR UHF POWER BLT53 MCD201
    Text: bTE T> N AUER P H I L I P S / D I S C R E T E bbS3^3]i GQ2Ö744 Ö4fl M A P X tjciiiiwudUUCIOrS _Product speciricauon UHF power transistor FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures


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    PDF GQ2A744 BLT53 OT122D MCD199 MCD201 MCD195 UHF POWER TRANSISTOR UHF POWER BLT53 MCD201

    bgjg

    Abstract: transistor T philips 2322 733 BLF542 UFU370 3a0c 2222 030 capacitor philips philips potentiometer 43t transistor 3909
    Text: Philips Semiconductors_ Product specification UHF power MOS transistor PHILIPS INTERNATIONAL FEATURES • • • • • • T " 3 <î?~0 cÎBLF542 5tiE D • 711DflSb 0D43TS4 5T3 ■ PHIN PIN CONFIGURATION High power gain Easy power control


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    PDF -0ciBLF542 0D43TS4 OT171 PINNING-SOT171 MBA931 MRA971 bgjg transistor T philips 2322 733 BLF542 UFU370 3a0c 2222 030 capacitor philips philips potentiometer 43t transistor 3909

    Untitled

    Abstract: No abstract text available
    Text: OOETTBfci MED M l A P X Philips Semiconductors Product specification HF/VHF power MOS transistor BLF242 1 N AMER PHIL IPS/DISCRETE h^E D PIN CONFIGURATION FEATURES • High power gain • Low noise • Easy power control • Good thermal stability • Withstands full load mismatch


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    PDF BLF242 OT123 OT123 MCA930

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors 3^53131 ODETSES 5bT Mi APX Product specification UHF power transistor BLV103 _ N ANER P H IL IP S /M S C R E T E bTE D _ QUICK REFERENCE DATA FEATURES • Internal matching for an optimum wideband capability and high gain


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    PDF BLV103 MRA362

    bly89a

    Abstract: Transistor bly89a
    Text: N AMER PHILIPS/DISCRETE ObE D 86D 0 1910 • b b S a ^ l Q01414fl 3 D T - i t-u BLY89A JV V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized. Every


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    PDF Q01414fl BLY89A 7Z675I bly89a Transistor bly89a

    "Brushless DC Motor Drive Circuit"

    Abstract: phase brushless dc motor speed control simple Application Note tda5141 TDA5141AT TDA5141 brushless dc motor speed control simple circuit pmt amplifier circuit Pt 100 sensor connection AND ITS DESCRIPTION TDA5*4 DIL18
    Text: Product specification Philips Semiconductors Linear Products Brushless DC motor drive circuit TDA5141 FEATURES AP PLICATIONS • Full-wave commutation using push/pull drivers at the output stages without position sensors • VCR • Built-in start-up circuitry


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    PDF TDA5141 TDA5141 711002b "Brushless DC Motor Drive Circuit" phase brushless dc motor speed control simple Application Note tda5141 TDA5141AT brushless dc motor speed control simple circuit pmt amplifier circuit Pt 100 sensor connection AND ITS DESCRIPTION TDA5*4 DIL18

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    PDF 3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007

    Untitled

    Abstract: No abstract text available
    Text: Philips Sem iconductors b b S 3T 31 OOBT^SB SOT M APX Product specification VH F power MOS transistor BLF245 N AUER PHILIPS/DISCRETE FEATURES b=1E D PIN CONFIGURATION • High power gain • Low noise figure • Easy power control • Good thermal stability


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    PDF BLF245 OT123 OT123