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    TRANSISTOR T8 Search Results

    TRANSISTOR T8 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR T8 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMDT8150 Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION „ The UTC MMDT8150 is a Dual NPN epitaxial planar transistor. It has low VCE SAT performance and the transistor elements are


    Original     		PDF MMDT8150 MMDT8150 MMDT8150L-AL6-R MMDT8150G-AL6-R MMDT8150L-AL6-R OT-363 QW-R218-017

    DSA00897

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMDT8150 Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION „ The UTC MMDT8150 is a Dual NPN epitaxial planar transistor. It has low VCE SAT performance and the transistor elements are


    Original     		PDF MMDT8150 MMDT8150 MMDT8150L-AL6-R MMDT8150G-AL6-R OT-363 QW-R218-017 DSA00897

    T8550

    Abstract: T8050 transistor t8050 transistor NPN TO-92 2W
    Text: Preliminary Specification RCL Semiconductors Ltd. T8050 NPN Medium Power Transistor GENERAL DESCRIPTION T8050 is NPN medium power transistor fabricated on the epitaxial silicon wafers. It is complimentary to T8550. It can be widely used in audio amplifiers and switching.


    Original     		PDF T8050 T8050 T8550. T8550 To-92 100mA 800mA 800mA, T8550 transistor t8050 transistor NPN TO-92 2W

    marking CODE N4

    Abstract: npn 8055 NXP Transistor standard marking
    Text: SO T8 9 BFQ540 NPN wideband transistor Rev. 05 — 21 March 2013 Product data sheet 1. Product profile 1.1 General description NPN wideband transistor in a SOT89 plastic package. 1.2 Features and benefits  High gain  Gold metallization ensures excellent


    Original     		PDF BFQ540 BFQ540 marking CODE N4 npn 8055 NXP Transistor standard marking

    MARKING CODE SMD IC

    Abstract: No abstract text available
    Text: 83B PMBT3904MB SO T8 40 V, 200 mA NPN switching transistor Rev. 1 — 7 March 2012 Product data sheet 1. Product profile 1.1 General description NPN single switching transistor in a leadless ultra small SOT883B Surface-Mounted Device SMD plastic package.


    Original     		PDF PMBT3904MB OT883B PMBT3906MB. AEC-Q101 MARKING CODE SMD IC

    T8550

    Abstract: T8050 transistor t8050
    Text: Preliminary Specification RCL Semiconductors Ltd. T8050-1 NPN Medium Power Transistor GENERAL DESCRIPTION T8050-1 is NPN medium power transistor fabricated on the epitaxial silicon wafers. It is complimentary to T8550-1. It can be widely used in audio amplifiers and switching.


    Original     		PDF T8050-1 T8050-1 T8550-1. T8550-1 800mA 800mA, T8550 T8050 transistor t8050

    Untitled

    Abstract: No abstract text available
    Text: SO T8 9 BSS87 200 V, N-channel vertical D-MOS transistor 9 December 2014 Product data sheet 1. General description N-channel enhancement mode vertical Double-Diffused Field-Effect Transistor DMOSFET in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device


    Original     		PDF BSS87 SC-62)

    Untitled

    Abstract: No abstract text available
    Text: 83B PMBT3906MB SO T8 40 V, 200 mA PNP switching transistor Rev. 1 — 2 April 2012 Product data sheet 1. Product profile 1.1 General description PNP single switching transistor in a leadless ultra small DFN1006B-3 SOT883B Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PMBT3906MB DFN1006B-3 OT883B) PMBT3904MB. AEC-Q101

    marking code a02 SMD Transistor

    Abstract: MARKING CODE SMD IC A08 A08 smd transistor
    Text: 83B PMBT3906MB SO T8 40 V, 200 mA PNP switching transistor Rev. 1 — 2 April 2012 Product data sheet 1. Product profile 1.1 General description PNP single switching transistor in a leadless ultra small DFN1006B-3 SOT883B Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PMBT3906MB DFN1006B-3 OT883B) PMBT3904MB. AEC-Q101 marking code a02 SMD Transistor MARKING CODE SMD IC A08 A08 smd transistor

    TRANSISTOR SMD MARKING CODE 2x

    Abstract: NXP SMD TRANSISTOR MARKING CODE TRANSISTOR SMD MARKING CODE 2x I TRANSISTOR SMD MARKING CODE t8 marking code BV SMD Transistor TRANSISTOR SMD MARKING CODE ce TRANSISTOR SMD MARKING CODE 41 BC846BMB transistor smd code marking 102 NXP SMD ic MARKING CODE
    Text: 83B BC846BMB SO T8 65 V, 100 mA NPN general-purpose transistor Rev. 1 — 15 May 2012 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistor in a leadless ultra small DFN1006B-3 SOT883B Surface-Mounted Device (SMD) plastic package.


    Original     		PDF BC846BMB DFN1006B-3 OT883B) AEC-Q101 TRANSISTOR SMD MARKING CODE 2x NXP SMD TRANSISTOR MARKING CODE TRANSISTOR SMD MARKING CODE 2x I TRANSISTOR SMD MARKING CODE t8 marking code BV SMD Transistor TRANSISTOR SMD MARKING CODE ce TRANSISTOR SMD MARKING CODE 41 BC846BMB transistor smd code marking 102 NXP SMD ic MARKING CODE

    Untitled

    Abstract: No abstract text available
    Text: SO T8 9 BSS192 240 V, P-channel vertical D-MOS transistor 12 December 2014 Product data sheet 1. General description P-channel enhancement mode vertical Double-Diffused Field-Effect Transistor DMOSFET in a SOT89 (SC-62) medium power and flat lead Surface Mounted Device


    Original     		PDF BSS192 SC-62)

    Untitled

    Abstract: No abstract text available
    Text: 83B PDTC114TMB SO T8 NPN resistor-equipped transistor; R1 = 10 k , R2 = open Rev. 1 — 21 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PDTC114TMB DFN1006B-3 OT883B) PDTA114TMB. AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: 83B PDTA124TMB SO T8 PNP resistor-equipped transistor; R1 = 22 k , R2 = open Rev. 1 — 29 June 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PDTA124TMB DFN1006B-3 OT883B) PDTC124TMB. AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: 83B PDTA114TMB SO T8 PNP resistor-equipped transistor; R1 = 10 k , R2 = open Rev. 1 — 26 June 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PDTA114TMB DFN1006B-3 OT883B) PDTC114TMB. AEC-Q101

    PDTC143EMB

    Abstract: PDTA143
    Text: 83B PDTC143EMB SO T8 NPN resistor-equipped transistor; R1 = 4.7 k , R2 = 4.7 k Rev. 1 — 7 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PDTC143EMB OT883B PDTA143EMB. AEC-Q101 PDTC143EMB PDTA143

    Untitled

    Abstract: No abstract text available
    Text: SO T8 9 PXTA42 300 V, 100 mA NPN high-voltage transistor Rev. 5 — 11 July 2011 Product data sheet 1. Product profile 1.1 General description NPN high-voltage transistor in a medium power and flat lead SOT89 SC-62 Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PXTA42 SC-62) PXTA92. AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: 83B PDTC124TMB SO T8 NPN resistor-equipped transistor; R1 = 22 k , R2 = open Rev. 1 — 29 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PDTC124TMB DFN1006B-3 OT883B) PDTA124TMB. AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: 83B PDTC144TMB SO T8 NPN resistor-equipped transistor; R1 = 47 k , R2 = open Rev. 1 — 29 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PDTC144TMB DFN1006B-3 OT883B) PDTA144TMB. AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: 83B PDTC115TMB SO T8 NPN resistor-equipped transistor; R1 = 100 k , R2 = open Rev. 1 — 21 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PDTC115TMB DFN1006B-3 OT883B) PDTA115TMB. AEC-Q101

    2d SMD PNP TRANSISTOR

    Abstract: TRANSISTOR SMD MARKING CODE 2d smd transistor marking code 24 smd TRANSISTOR code marking 2d SMD TRANSISTOR MARKING 2D "marking Code" V2 sot89
    Text: SO T8 9 PXTA92 300 V, 100 mA PNP high-voltage transistor Rev. 6 — 27 September 2011 Product data sheet 1. Product profile 1.1 General description PNP high-voltage transistor in a medium power and flat lead SOT89 SC-62 Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PXTA92 SC-62) PXTA42. AEC-Q101 2d SMD PNP TRANSISTOR TRANSISTOR SMD MARKING CODE 2d smd transistor marking code 24 smd TRANSISTOR code marking 2d SMD TRANSISTOR MARKING 2D "marking Code" V2 sot89

    TRANSISTOR SMD MARKING CODE 1d

    Abstract: SMD TRANSISTOR MARKING 1D placeholder for manufacturing site code
    Text: SO T8 9 PXTA42 300 V, 100 mA NPN high-voltage transistor Rev. 5 — 11 July 2011 Product data sheet 1. Product profile 1.1 General description NPN high-voltage transistor in a medium power and flat lead SOT89 SC-62 Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PXTA42 SC-62) PXTA92. AEC-Q101 TRANSISTOR SMD MARKING CODE 1d SMD TRANSISTOR MARKING 1D placeholder for manufacturing site code

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    NPN Transistor 5V DARLINGTON

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSP25/26/27 DARLINGTON TRANSISTOR • Collector-Emitter Voltage: V Ces = KSP25: 40V KSP26: 50V KSP27: 60V • Collector Dissipation: Pc max =625mW TO-92 ABSOLUTE MAXIMUM RATINGS (T8=25°C) Characteristic Collector Base Voltage


    OCR Scan     		PDF KSP25/26/27 KSP25: KSP26: KSP27: 625mW KSP25 KSP26 KSP27 NPN Transistor 5V DARLINGTON

    transistor t8

    Abstract: BCW69 MMBT5086 T8 SOT23
    Text: SAMSUNG S EMICONDUCTOR IN C S BCW69 1 4 E D J l ? “11 5 D0G 751b 3 | PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS T8=25°C Characteristic Collector-Emitter Voltage Emitter-Base Voltage : Collector Current


    OCR Scan     		PDF BCW69 MMBT5086 OT-23 100fiA, transistor t8 T8 SOT23