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    TRANSISTOR T1A Search Results

    TRANSISTOR T1A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR T1A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    toroid FT10

    Abstract: 1N5761 diode 1n400 MTP12N10 MTP8P10 MUR105 MUR150 1N4007 BUL45 MJE210
    Text: ON Semiconductor BUL45 NPN Silicon Power Transistor High Voltage SWITCHMODEt Series Designed for use in electronic ballast light ballast) and in Switchmode Power supplies up to 50 Watts. Main features include: POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS


    Original     		BUL45 r14525 BUL45/D toroid FT10 1N5761 diode 1n400 MTP12N10 MTP8P10 MUR105 MUR150 1N4007 BUL45 MJE210 PDF

    1N5761

    Abstract: si 1N4007 transistor toroid FT10 1N4007 BUL45 MJE210 MPF930 MTP12N10 MTP8P10 MUR105
    Text: ON Semiconductort BUL45 NPN Silicon Power Transistor High Voltage SWITCHMODEt Series Designed for use in electronic ballast light ballast and in Switchmode Power supplies up to 50 Watts. Main features include: POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS


    Original     		BUL45 r14525 BUL45/D 1N5761 si 1N4007 transistor toroid FT10 1N4007 BUL45 MJE210 MPF930 MTP12N10 MTP8P10 MUR105 PDF

    1N5761

    Abstract: No abstract text available
    Text: ON Semiconductor BUL45 NPN Silicon Power Transistor High Voltage SWITCHMODEt Series Designed for use in electronic ballast light ballast) and in Switchmode Power supplies up to 50 Watts. Main features include: POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS


    Original     		BUL45 CurreUR150 MUR105 1N400 F/385 nF/1000 F/400 1N5761 PDF

    transistor bd4202

    Abstract: motorola AN485 transistor tip120 motorola MJ480 MJE802 MOTOROLA TRANSISTOR REPLACEMENT GUIDE 2SC495 transistor MJE1100 MOTOROLA BUX98A MJE170 motorola
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUL45 * BUL45F*  Data Sheet Designer's NPN Silicon Power Transistor High Voltage SWITCHMODE t Series *Motorola Preferred Device POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS Designed for use in electronic ballast light ballast and in Switchmode Power


    Original     		BUL45 BUL45F* BUL45F, E69369 RATING32 TIP73B TIP74 TIP74A TIP74B TIP75 transistor bd4202 motorola AN485 transistor tip120 motorola MJ480 MJE802 MOTOROLA TRANSISTOR REPLACEMENT GUIDE 2SC495 transistor MJE1100 MOTOROLA BUX98A MJE170 motorola PDF

    toroid FT10

    Abstract: BUL45F 221A-06 221D BUL45 MJE18006 MJF18006 1000 watt hf transistor 12 volt 150 watt hf transistor 12 volt
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU L45* BUL45F* Designer’s Data Sheet NPN Silicon Power Transistor 'M otorola Preferred Device POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS High Voltage SWITCHMODE™ Series Designed for use in electronic ballast light ballast and in Switchmode Power


    OCR Scan     		BUL45F, E69369 BUL45 BUL45F toroid FT10 221A-06 221D MJE18006 MJF18006 1000 watt hf transistor 12 volt 150 watt hf transistor 12 volt PDF

    toroid FT10

    Abstract: MTP8P10 MUR105 MJE18006 MJF18006 MPF930 221D BUL45 BUL45F L 0629
    Text: MOTOROLA Order this document by BUL45/D SEMICONDUCTOR TECHNICAL DATA BUL45 * BUL45F*  Data Sheet Designer's NPN Silicon Power Transistor High Voltage SWITCHMODE t Series *Motorola Preferred Device POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS Designed for use in electronic ballast light ballast and in Switchmode Power


    Original     		BUL45/D BUL45 BUL45F* BUL45F BUL45/D* toroid FT10 MTP8P10 MUR105 MJE18006 MJF18006 MPF930 221D BUL45 BUL45F L 0629 PDF

    1N5761

    Abstract: RM10-CORE pl lamp ballast MJF18006 221D BUL45 BUL45F MJE18006 MPF930 MTP8P10
    Text: MOTOROLA Order this document by BUL45/D SEMICONDUCTOR TECHNICAL DATA Designer's BUL45 * BUL45F*  Data Sheet NPN Silicon Power Transistor High Voltage SWITCHMODE t Series *Motorola Preferred Device POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS Designed for use in electronic ballast light ballast and in Switchmode Power


    Original     		BUL45/D BUL45 BUL45F* BUL45F BUL45/D* 1N5761 RM10-CORE pl lamp ballast MJF18006 221D BUL45 BUL45F MJE18006 MPF930 MTP8P10 PDF

    tip122 tip127 audio amp schematic

    Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
    Text: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.


    Original     		DL111/D July-2001 r14525 tip122 tip127 audio amp schematic mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier PDF

    MJF1800

    Abstract: MJE1800
    Text: ON Semiconductort BUL45 * BUL45F * NPN Silicon Power Transistor High Voltage SWITCHMODEt Series *ON Semiconductor Preferred Device Designed for use in electronic ballast light ballast and in Switchmode Power supplies up to 50 Watts. Main features include:


    Original     		BUL45 BUL45F BUL45F, E69369 r14525 BUL45/D MJF1800 MJE1800 PDF

    2SK2607

    Abstract: SC-65 diode ED 9A
    Text: TOSHIBA 2SK2607 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2607 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Low Drain-Source ON Resistance


    OCR Scan     		2SK2607 SC-65 diode ED 9A PDF

    marking code t1a

    Abstract: transistor t1A SOT323 T1A PMST3904 t1A Transistor MARKING transistor t1A 90 transistor t1A 25 si transistor marking transistor t1A 80
    Text: Philips Semiconductors Product specification NPN switching transistor PMST3904 PINNING FEATURES • Low current {max. 200 mA PIN • Low voltage max. 40 V). 1 APPLICATIONS DESCRIPTION base 2 emitter 3 collector • Telephony • Professional communication equipment.


    OCR Scan     		PMST3904 OT323 PMST3906. PMST3904 MAM062 OT323) LB826 Jul04 marking code t1a transistor t1A SOT323 T1A t1A Transistor MARKING transistor t1A 90 transistor t1A 25 si transistor marking transistor t1A 80 PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 PDF

    transistor WL 431

    Abstract: 2N700A BUV pnp 50a MW1131
    Text: M IL-S-19500/123A EL 12 Decokber 1966 SUPERSEDING MIL -S—19500/123(SigC) 1 July 1960 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR PNP, GERMANIUM TYPE 2N700A 1. SCOPE 1.1 Scope. - This specification coveKthe detail requirements for a germanium, PNP,


    OCR Scan     		MIL-S-19500/123A -S-19500/123 2N700A -65to 70MHz 5961-A085 transistor WL 431 2N700A BUV pnp 50a MW1131 PDF

    1N5761

    Abstract: npn BUL45G bul45a
    Text: BUL45G NPN Silicon Power Transistor High Voltage SWITCHMODE Series Designed for use in electronic ballast light ballast and in SWITCHMODE Power supplies up to 50 W. Features • Improved Efficiency Due to: Low Base Drive Requirements (High and Flat DC Current Gain hFE)


    Original     		BUL45G BUL45/D 1N5761 npn BUL45G bul45a PDF

    nec 7915

    Abstract: 2SK1994 10KW MEI-1202 TEA-1035 7915 transistor
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR 2SK1994 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE


    OCR Scan     		2SK1994 2SK1994 IEI-1209) nec 7915 10KW MEI-1202 TEA-1035 7915 transistor PDF

    bul45g

    Abstract: No abstract text available
    Text: BUL45G NPN Silicon Power Transistor High Voltage SWITCHMODE Series Designed for use in electronic ballast light ballast and in SWITCHMODE Power supplies up to 50 W. Features • Improved Efficiency Due to: Low Base Drive Requirements (High and Flat DC Current Gain hFE)


    Original     		BUL45G O-220AB 21A-09 BUL45/D bul45g PDF

    1N5761

    Abstract: marking code t1a BUL45 BUL45G MJE210 MPF930 MTP12N10 MTP8P10 MUR105 MUR150
    Text: BUL45 NPN Silicon Power Transistor High Voltage SWITCHMODEt Series Designed for use in electronic ballast light ballast and in Switchmode Power supplies up to 50 Watts. Features • Improved Efficiency Due to: ♦ Low Base Drive Requirements (High and Flat DC Current Gain hFE)


    Original     		BUL45 O-220AB 21A-09 BUL45/D 1N5761 marking code t1a BUL45 BUL45G MJE210 MPF930 MTP12N10 MTP8P10 MUR105 MUR150 PDF

    Untitled

    Abstract: No abstract text available
    Text: 131,072 WORDS X 8 BIT CMOS PRELIMINARY PSEUDO STATIC RAM DESCRIPTION The TC518128A-LV Family is a 1M bit high speed CMOS Pseudo Static RAM organized as 131,072 words by 8 bits. The TC518128A-LV Family utilizing one transistor dynamic memory’ cell with CMOS


    OCR Scan     		TC518128A-LV TC518128A -10LV, -12LV 18128A L-80LV L-10LV PDF

    NE42484C

    Abstract: transistor NEC D 586 NEC Ga FET marking L NE42484C-T1 28609 low noise FET NEC U ne42484 nec gaas fet marking NEC 2533 NEC Ga FET
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE42484C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit : mm The NE42484C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent


    OCR Scan     		NE42484C NE42484C 42484C E42484C-SL NE42484C-T1 transistor NEC D 586 NEC Ga FET marking L NE42484C-T1 28609 low noise FET NEC U ne42484 nec gaas fet marking NEC 2533 NEC Ga FET PDF

    vogt w4

    Abstract: vogt w5 vogt PULSE TRANSFORMER PC817 OPTOCOUPLER SHARP vogt transformer vogt switching transformer litz wire table VOGT T1 switching transformer AN2252 bzx85v
    Text: AN2252 Application note Zero-voltage switching and emitter-switched bipolar transistor in a 3-phase auxiliary power supply Introduction The flyback converter is a popular choice in applications where the required power is normally less than 200W. The main reasons explaining its popularity are its simplicity, low


    Original     		AN2252 vogt w4 vogt w5 vogt PULSE TRANSFORMER PC817 OPTOCOUPLER SHARP vogt transformer vogt switching transformer litz wire table VOGT T1 switching transformer AN2252 bzx85v PDF

    transistor t1A

    Abstract: SuperSOT-23 Royer EPS115 "dummy load" SOT323 T1A 101J CDH74-101JC t1a transistor transistor t1A 80
    Text: Design Note 55 Issue 1 July 2000 A High Efficiency Royer Driver for a Scanner CCFL A practical application using Zetex’s very low VCEsat transistor is discussed here for driving a 4.5W CCFL lamp 240.0mm x 3.0mm diameter as used in a scanner. The circuit can be


    Original     		SuperSOT-23 OT-323 CDH74-101JC FMMT619 22pF/3KV EPS115 /6379-T002 DN55-1 transistor t1A Royer "dummy load" SOT323 T1A 101J CDH74-101JC t1a transistor transistor t1A 80 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGS05N60D/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MGS05N60D Insulated G ate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This IGBT contains a b uilt-in free wheeling diode and a gate protection zener diodes. Fast switching characteristics result in


    OCR Scan     		MGS05N60D/D MGS05N60D PDF

    transistor t1a

    Abstract: t1A Transistor MARKING marking code t1a t1a transistor transistor t1A 25 SMT T1A transistor T1n
    Text: UMT1N IMT1A Transistor, dual, PNP Features Dimensions Units : mm • available in UMT6 (UM6) and SMT6 (IMD, SC-74) packages • package marking: U M T1N and IMT1 A; T1 UMT1N (UMT6) g .0 i0 .2 Fr^Ÿl >±0.1 (2) JBHHf IS 0.65 I • package contains two independent


    OCR Scan     		SC-74) 2SA1037AK) SC-70) SC-59) transistor t1a t1A Transistor MARKING marking code t1a t1a transistor transistor t1A 25 SMT T1A transistor T1n PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGS13002D/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MGS13002D Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This IGBT contains a b uilt-in free wheeling diode and a gate protection zener diodes. Fast switching characteristics result in


    OCR Scan     		MGS13002D/D MGS13002D PDF